Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.

Abstract: A fabricating method of a middle voltage transistor includes providing a substrate. A gate predetermined region is defined on the substrate. Next, a mask layer is formed to cover only part of the gate predetermined region. Then, a first ion implantation process is performed to implant dopants into the substrate at two sides of the mask layer to form two first lightly doping regions. After removing the mask layer, a gate is formed to overlap the entirety gate predetermined region. Subsequently, two second lightly doping regions respectively formed within one of the first lightly doping regions. Next, two source/drain doping regions are respectively formed within one of the second lightly doping regions. Finally, two silicide layers are formed to respectively cover one of the source/drain doping regions.

Abstract: A semiconductor package includes a first substrate and a first semiconductor device. The first semiconductor device is bonded to the first substrate and includes a second substrate, a plurality of first dies and a second die. The first dies are disposed between the first substrate and the second substrate. The second die is surrounded by the first dies. A cavity is formed among the first dies, the first substrate and the second substrate, and a gap is formed between the second die and the first substrate.

Abstract: An optical lens assembly includes at least one dual molded lens element. The dual molded lens element has a central axis, and includes a light transmitting portion and a light absorbing portion. The light transmitting portion includes an optical effective region and a lens peripheral region, and the lens peripheral region surrounds the optical effective region. A light absorbing portion surrounds the optical effective region. The light transmitting portion and the light absorbing portion are made of different plastic materials with different colors, and the light absorbing portion includes at least three gate portions surrounding the central axis, wherein all gate portions are located on the same surface of the dual molded lens element. The light transmitting portion and the light absorbing portion of the dual molded lens element are integrally formed by the injection molding.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.

Abstract: An electronic device includes: a circuit board; a plurality of diodes disposed on a first surface of the circuit board; a plurality of first driving circuits disposed on the first surface of the circuit board and electrically connected to the plurality of diodes; and a plurality of second driving circuits electrically connected to the plurality of first driving circuits, wherein a part of the plurality of second driving circuits are disposed on a first substrate, and another part of the second driving circuits are disposed on a second substrate.

Abstract: A salt of a neuroceutical and of an acid, wherein the neuroceutical is a substituted benzodiazepine, a substituted benzothiazepine, a substituted pyridopyrimidines or a substituted amino-cyclohexaneacetic acid; and the acid is benzoic acid, nicotinic acid, pantothenic acid and tannic acid. The molar ratio of the neuroceutical and the acid in the salt ranges from about 6:1 to about 1:5. Also disclosed herein are compositions comprising the neuroceutical salt and therapeutic uses thereof for treating a central nervous system (CNS) disorder or a metabolic disorder associated with the CNS disorder.

Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.

Abstract: A patterning method includes providing a photosensitive composition on a material layer. The photosensitive composition includes one part by weight of a photo sensitive compound, 1.5 to 8 parts by weight of a resin, and 10 to 40 parts by weight of a diluent. The photosensitive compound has a chemical structure of The patterning method further includes removing the diluent in the photosensitive composition to form a photoresist layer, exposing the photoresist layer, and removing an exposed part of the photoresist layer to expose a part of the material layer.

Abstract: An optical lens assembly includes at least one dual molded lens element. The dual molded lens element has a central axis, and includes a light transmitting portion and a light absorbing portion. The light transmitting portion includes an optical effective region and a lens peripheral region, and the lens peripheral region surrounds the optical effective region. A light absorbing portion surrounds the optical effective region. The light transmitting portion and the light absorbing portion are made of different plastic materials with different colors, and the light absorbing portion includes at least three gate portions surrounding the central axis, wherein all gate portions are located on the same surface of the dual molded lens element. The light transmitting portion and the light absorbing portion of the dual molded lens element are integrally formed by the injection molding.

Abstract: A fabricating method of a high electron mobility transistor includes providing a substrate. Then, a channel layer, an active layer, a P-type group III-V compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist are formed to cover the substrate. Later, a dry etching process is performed to etch the hard mask material layer and the metal compound material layer to form a hard mask and a metal compound layer by taking the patterned photoresist as a mask. During the dry etching process, a spacer generated by by-products is formed to surround the patterned photoresist, the hard mask and the metal compound layer. After the dry etching process, the P-type group III-V compound material layer is etched by taking the spacer and the patterned photoresist as a mask.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a patterned mask on the buffer layer; using the patterned mask to remove the buffer layer for forming ridges and a damaged layer on the ridges; removing the damaged layer; forming a barrier layer on the ridges; and forming a p-type semiconductor layer on the barrier layer.

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, ridges extending along a first direction on the buffer layer, gaps extending along the first direction between the ridges, a p-type semiconductor layer extending along a second direction on the ridges and inserted into the gaps, and a source electrode and a drain electrode adjacent to two sides of the p-type semiconductor layer. Preferably, the source electrode and the drain electrode are extending along the second direction and directly on top of the ridges.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a patterned mask on the buffer layer; using the patterned mask to remove the buffer layer for forming ridges and a damaged layer on the ridges; removing the damaged layer; forming a barrier layer on the ridges; and forming a p-type semiconductor layer on the barrier layer.

Abstract: A semiconductor structure includes a substrate, a stacked structure on the substrate, an insulating layer on the stacked structure, a passivation layer on the insulating layer, and a contact structure through the passivation layer and the insulating layer and directly contacting the stacked structure. The insulating layer has an extending portion protruding from a sidewall of the passivation layer and adjacent to a surface of the stacked structure directly contacting the contact structure.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a patterned mask on the buffer layer; using the patterned mask to remove the buffer layer for forming ridges and a damaged layer on the ridges; removing the damaged layer; forming a barrier layer on the ridges; and forming a p-type semiconductor layer on the barrier layer.

Abstract: For a fiber optic connector including a casing sleeve receiving a ferrule with guide pins, a pin removal device includes a housing unit, a releasing unit and a removal member. The housing unit includes a receiving space to receive the guide pins. The releasing unit is to operate the pin retainer such that the pin retainer disengages from the guide pins, and is extendable through the housing unit into the casing sleeve. The removal member is inserted into the receiving space to clamp the guide pins and is movable relative to the housing unit to pull the guide pins and release the same from the pin retainer when the releasing unit operates the pin retainer to disengage from the guide pins.

Abstract: A heating system includes a closed pipe for flowing kerosene, the closed pipe including lengthwise conductive ridges on an inner surface; a pump being in fluid communication with kerosene; heating assemblies each including an insulation cylinder put on a portion of the closed pipe, and a heating coil wound on the insulation cylinder for heating the kerosene; and a plurality of electric power sources each electrically connected to the heating coil.

Abstract: An optical fiber connector includes a housing unit and an operating unit. The housing unit includes a resilient retaining arm member. The operating unit includes a pivot seat, a hook member pivotally connected to the pivot seat, rotatable relative to the pivot seat, and having a front end that abuts against the resilient retaining arm member, and an operating rod pivotally connected to a rear end of the hook member. When the operating rod is pulled rearwardly, the hook member is driven to pivotally rotate relative to the pivot seat such that, the hook member presses and moves the rear end of the resilient retaining arm member, so as to deform the resilient retaining arm member, thereby allowing for removal of an adapter from the optical fiber connector.

Abstract: A fiber optic connector includes a housing body, a spring push, a connecting plug, a sleeve and a conversion unit. The spring push and the connecting plug are disposed in the housing body. The sleeve is sleeved on the housing body. The conversion unit includes a clamping member and two guide pins. The clamping member is disposed in the housing body, and has two clamping portions. The clamping portions are switchable between a clamping state, in which the guide pins are clamped by the clamping portions and protrude from the connecting plug, and a non-clamping state, in which the guide pins are released from the clamping portions and removed from the connecting plug.