Patents by Inventor Ming-Hua Chang

Ming-Hua Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200003961
    Abstract: For a fiber optic connector including a casing sleeve receiving a ferrule with guide pins, a pin removal device includes a housing unit, a releasing unit and a removal member. The housing unit includes a receiving space to receive the guide pins. The releasing unit is to operate the pin retainer such that the pin retainer disengages from the guide pins, and is extendable through the housing unit into the casing sleeve. The removal member is inserted into the receiving space to clamp the guide pins and is movable relative to the housing unit to pull the guide pins and release the same from the pin retainer when the releasing unit operates the pin retainer to disengage from the guide pins.
    Type: Application
    Filed: November 29, 2018
    Publication date: January 2, 2020
    Inventors: Ming-Hua CHANG, Yen-Chang LEE
  • Publication number: 20190380173
    Abstract: A heating system includes a closed pipe for flowing kerosene, the closed pipe including lengthwise conductive ridges on an inner surface; a pump being in fluid communication with kerosene; heating assemblies each including an insulation cylinder put on a portion of the closed pipe, and a heating coil wound on the insulation cylinder for heating the kerosene; and a plurality of electric power sources each electrically connected to the heating coil.
    Type: Application
    Filed: May 28, 2019
    Publication date: December 12, 2019
    Inventor: Ming-Hua Chang
  • Patent number: 10185099
    Abstract: An optical fiber connector includes a housing unit and an operating unit. The housing unit includes a resilient retaining arm member. The operating unit includes a pivot seat, a hook member pivotally connected to the pivot seat, rotatable relative to the pivot seat, and having a front end that abuts against the resilient retaining arm member, and an operating rod pivotally connected to a rear end of the hook member. When the operating rod is pulled rearwardly, the hook member is driven to pivotally rotate relative to the pivot seat such that, the hook member presses and moves the rear end of the resilient retaining arm member, so as to deform the resilient retaining arm member, thereby allowing for removal of an adapter from the optical fiber connector.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: January 22, 2019
    Assignee: GLORIOLE ELECTROPTIC TECHNOLOGY CORP.
    Inventors: Ming-Hua Chang, Tung-Chun Huang
  • Publication number: 20180364421
    Abstract: A fiber optic connector includes a housing body, a spring push, a connecting plug, a sleeve and a conversion unit. The spring push and the connecting plug are disposed in the housing body. The sleeve is sleeved on the housing body. The conversion unit includes a clamping member and two guide pins. The clamping member is disposed in the housing body, and has two clamping portions. The clamping portions are switchable between a clamping state, in which the guide pins are clamped by the clamping portions and protrude from the connecting plug, and a non-clamping state, in which the guide pins are released from the clamping portions and removed from the connecting plug.
    Type: Application
    Filed: September 25, 2017
    Publication date: December 20, 2018
    Inventors: Ming-Hua CHANG, Yen-Chang LEE
  • Patent number: 9966468
    Abstract: A method for fabricating semiconductor device is disclosed. First, a fin-shaped structure is formed on a substrate, a first liner is formed on the substrate and the fin-shaped structure, a second liner is formed on the first liner, part of the second liner and part of the first liner are removed to expose a top surface of the fin-shaped structure, part of the first liner between the fin-shaped structure and the second liner is removed to form a recess, and an epitaxial layer is formed in the recess.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: May 8, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tien-Chen Chan, Yi-Fan Li, Li-Wei Feng, Ming-Hua Chang, Yu-Shu Lin, Shu-Yen Chan
  • Patent number: 9899498
    Abstract: A semiconductor device is provided, including a substrate with an isolation layer formed thereon, wherein the substrate has a fin protruding up through the isolation layer to form a top surface and a pair of lateral sidewalls of the fin above the isolation layer; a silicon-germanium (SiGe) layer epitaxially grown on the top surface and the lateral sidewalls of the fin; and a gate stack formed on the isolation layer and across the fin, wherein the fin and the gate stack respectively extend along a first direction and a second direction. The SiGe layer formed on the top surface has a first thickness, the SiGe layer formed on said lateral sidewall has a second thickness, and a ratio of the first thickness to the second thickness is in a range of 1:10 to 1:30.
    Type: Grant
    Filed: May 9, 2017
    Date of Patent: February 20, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tien-Chen Chan, Yi-Fan Li, Yen-Hsing Chen, Chun-Yu Chen, Chung-Ting Huang, Zih-Hsuan Huang, Ming-Hua Chang, Yu-Shu Lin, Shu-Yen Chan
  • Publication number: 20180019324
    Abstract: A semiconductor device is provided, including a substrate with an isolation layer formed thereon, wherein the substrate has a fin protruding up through the isolation layer to form a top surface and a pair of lateral sidewalls of the fin above the isolation layer; a silicon-germanium (SiGe) layer epitaxially grown on the top surface and the lateral sidewalls of the fin; and a gate stack formed on the isolation layer and across the fin, wherein the fin and the gate stack respectively extend along a first direction and a second direction. The SiGe layer formed on the top surface has a first thickness, the SiGe layer formed on said lateral sidewall has a second thickness, and a ratio of the first thickness to the second thickness is in a range of 1:10 to 1:30.
    Type: Application
    Filed: May 9, 2017
    Publication date: January 18, 2018
    Inventors: Tien-Chen Chan, Yi-Fan Li, Yen-Hsing Chen, Chun-Yu Chen, Chung-Ting Huang, Zih-Hsuan Huang, Ming-Hua Chang, Yu-Shu Lin, Shu-Yen Chan
  • Publication number: 20170373191
    Abstract: A method for fabricating semiconductor device is disclosed. First, a fin-shaped structure is formed on a substrate, a first liner is formed on the substrate and the fin-shaped structure, a second liner is formed on the first liner, part of the second liner and part of the first liner are removed to expose a top surface of the fin-shaped structure, part of the first liner between the fin-shaped structure and the second liner is removed to form a recess, and an epitaxial layer is formed in the recess.
    Type: Application
    Filed: July 19, 2016
    Publication date: December 28, 2017
    Inventors: Tien-Chen Chan, Yi-Fan Li, Li-Wei Feng, Ming-Hua Chang, Yu-Shu Lin, Shu-Yen Chan
  • Patent number: 9851512
    Abstract: An optical fiber connector includes a main body unit having a guiding groove, and two position limiting portions that respectively protrude from two walls respectively defining two sides of the guiding groove toward each other, a sleeve unit, and a coupling unit including two coupling members each having two first protruding block portions that respectively protrude away from each other. The sleeve unit is configured to be movable rearwardly on the main body unit to press the first protruding block portions toward each other, so as to allow the first protruding block portions to pass past the position limiting portions, thereby allowing for movement of each of the coupling members between a non-working position and a working position.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: December 26, 2017
    Assignees: GLORIOLE ELECTROPTIC TECHNOLOGY CORP., SHEN ZHEN WONDERWIN TECHNOLOGY CO., LTD.
    Inventors: Ming-Hua Chang, Yen-Chang Lee
  • Publication number: 20170329090
    Abstract: An optical fiber connector includes a main body unit having a guiding groove, and two position limiting portions that respectively protrude from two walls respectively defining two sides of the guiding groove toward each other, a sleeve unit, and a coupling unit including two coupling members each having two first protruding block portions that respectively protrude away from each other. The sleeve unit is configured to be movable rearwardly on the main body unit to press the first protruding block portions toward each other, so as to allow the first protruding block portions to pass past the position limiting portions, thereby allowing for movement of each of the coupling members between a non-working position and a working position.
    Type: Application
    Filed: May 12, 2017
    Publication date: November 16, 2017
    Inventors: Ming-Hua CHANG, Yen-Chang LEE
  • Publication number: 20170299818
    Abstract: An optical fiber connector includes a housing unit and an operating unit. The housing unit includes a resilient retaining arm member. The operating unit includes a pivot seat, a hook member pivotally connected to the pivot seat, rotatable relative to the pivot seat, and having a front end that abuts against the resilient retaining arm member, and an operating rod pivotally connected to a rear end of the hook member. When the operating rod is pulled rearwardly, the hook member is driven to pivotally rotate relative to the pivot seat such that, the hook member presses and moves the rear end of the resilient retaining arm member, so as to deform the resilient retaining arm member, thereby allowing for removal of an adapter from the optical fiber connector.
    Type: Application
    Filed: April 14, 2017
    Publication date: October 19, 2017
    Inventors: Ming-Hua CHANG, Tung-Chun HUANG
  • Patent number: 9680022
    Abstract: A semiconductor device is provided, including a substrate with an isolation layer formed thereon, wherein the substrate has a fin protruding up through the isolation layer to form a top surface and a pair of lateral sidewalls of the fin above the isolation layer; a silicon-germanium (SiGe) layer epitaxially grown on the top surface and the lateral sidewalls of the fin; and a gate stack formed on the isolation layer and across the fin, wherein the fin and the gate stack respectively extend along a first direction and a second direction. The SiGe layer formed on the top surface has a first thickness, the SiGe layer formed on said lateral sidewall has a second thickness, and a ratio of the first thickness to the second thickness is in a range of 1:10 to 1:30.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: June 13, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tien-Chen Chan, Yi-Fan Li, Yen-Hsing Chen, Chun-Yu Chen, Chung-Ting Huang, Zih-Hsuan Huang, Ming-Hua Chang, Yu-Shu Lin, Shu-Yen Chan
  • Patent number: 9660086
    Abstract: The present invention provides a fin-shaped field effect transistor (FinFET), comprises: a substrate having a fin structure; a plurality trenches formed on the fin structure with an alloy grown in the trenches; a gate structure on the fin structure perpendicular to an extending direction of the fin structure in-between the plurality of trenches; and an amorphous layer on a surface of the fin structure exposed by the gate structure and disposed in-between the gate structure and the alloy. The invention also provides a manufacturing method of a fin-shaped field effect transistor (FinFET).
    Type: Grant
    Filed: May 17, 2016
    Date of Patent: May 23, 2017
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Chun-Yu Chen, Chung-Ting Huang, Ming-Hua Chang, Tien-Chen Chan, Yen-Hsing Chen, Hsin-Chang Wu
  • Publication number: 20170142520
    Abstract: The present invention discloses a hybrid electrostatic headphone module, with the hybrid electrostatic headphone module disposed in the interior of a left and a right ear cup of a stereo headphones. The hybrid electrostatic headphone module is assembled as a single unit from a traditional moving coil type headphone unit and an electret headphone unit (E-STAT), which are respectively responsible for medium-low frequency bands and medium-high frequency bands. A frequency divider assembled from a frequency division capacitance and a drive transformer divides a complete signal into medium-high frequency and medium-low frequency bands, which are then respectively supplied to high and low frequency sound speakers for output therefrom.
    Type: Application
    Filed: December 4, 2016
    Publication date: May 18, 2017
    Inventors: Tien-Lai Wang, Ming-Hua Chang
  • Publication number: 20170047439
    Abstract: The present invention provides a fin-shaped field effect transistor (FinFET), comprises: a substrate having a fin structure; a plurality trenches formed on the fin structure with an alloy grown in the trenches; a gate structure on the fin structure perpendicular to an extending direction of the fin structure in-between the plurality of trenches; and an amorphous layer on a surface of the fin structure exposed by the gate structure and disposed in-between the gate structure and the alloy. The invention also provides a manufacturing method of a fin-shaped field effect transistor (FinFET).
    Type: Application
    Filed: May 17, 2016
    Publication date: February 16, 2017
    Inventors: Chun-Yu Chen, Chung-Ting Huang, Ming-Hua Chang, Tien-Chen CHAN, Yen-Hsing CHEN, Hsin-Chang WU
  • Patent number: 9397214
    Abstract: A semiconductor device is provided includes a substrate, a gate structure formed on the substrate, an epitaxial source/drain structure respectively formed at two sides of the gate structure, and a boron-rich interface layer. The boron-rich interface layer includes a bottom-and-sidewall portion and a top portion, and the epitaxial source/drain structure is enclosed by the bottom-and-sidewall portion and the top portion.
    Type: Grant
    Filed: February 16, 2015
    Date of Patent: July 19, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tien-Chen Chan, Hsin-Chang Wu, Chun-Yu Chen, Ming-Hua Chang, Sheng-Hsu Liu, Chieh-Lung Wu, Chung-Min Tsai, Neng-Hui Yang
  • Patent number: 9373705
    Abstract: The present invention provides a manufacturing method of a fin-shaped field effect transistor (FinFET), comprises the following steps. Firstly, providing a substrate having a fin structure; forming a gate structure on the fin structure perpendicular to a extending direction of the fin structure; performing an amorphous implantation to form an amorphous layer on a exposed portion of the fin structure exposed by the gate structure and a light-doping implantation; forming a sacrificial spacer on sides of the gate structure covering a portion of the amorphous layer on the fin structure; forming a trench on the fin structure adjacent to the sacrificial spacer; growing an alloy in the trench; and then removing the sacrificial spacer. The invention also provides a FinFET device thereof.
    Type: Grant
    Filed: August 14, 2015
    Date of Patent: June 21, 2016
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Chun-Yu Chen, Chung-Ting Huang, Ming-Hua Chang, Tien-Chen Chan, Yen-Hsing Chen, Hsin-Chang Wu
  • Patent number: 9263579
    Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: February 16, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Hua Chang, Chun-Yuan Wu, Chin-Cheng Chien, Tien-Wei Yu, Yu-Shu Lin, Szu-Hao Lai
  • Patent number: 9214551
    Abstract: A method for fabricating a semiconductor device, and a semiconductor device made with the method are described. In the method, a cavity is formed in a substrate, a first epitaxy process is performed under a pressure higher than 65 torr to form a buffer layer in the cavity, and a second epitaxy process is performed to form a semiconductor compound layer on the buffer layer in the cavity. In the semiconductor device, the ratio (S/Y) of the thickness S of the buffer layer on a lower sidewall of the cavity to the thickness Y of the buffer layer at the bottom of the cavity ranges from 0.6 to 0.8.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: December 15, 2015
    Assignee: United Microelectronics Corp.
    Inventors: Ming-Hua Chang, Tien-Wei Yu, I-Cheng Hu, Chieh-Lung Wu, Yu-Shu Lin, Chun-Jen Chen, Tsung-Mu Yang, Tien-Chen Chan, Chin-Cheng Chien
  • Publication number: 20150281850
    Abstract: The present invention discloses a hybrid electrostatic headphone module, with the hybrid electrostatic headphone module disposed in the interior of a left and a right ear cup of a stereo headphones. The hybrid electrostatic headphone module is assembled as a single unit from a traditional moving coil type headphone unit and an electret headphone unit (E-STAT), which are respectively responsible for medium-low frequency bands and medium-high frequency bands. A frequency divider assembled from a frequency division capacitance and a drive transformer divides a complete signal into medium-high frequency and medium-low frequency bands, which are then respectively supplied to high and low frequency sound speakers for output therefrom.
    Type: Application
    Filed: August 17, 2014
    Publication date: October 1, 2015
    Applicant: VERISONIX CORPORATION
    Inventors: Tien-Lai Wang, Ming-Hua Chang