Abstract: According to an exemplary embodiment, a substrate having a first area and a second area is provided. The substrate includes a plurality of pads. Each of the pads has a pad size. The pad size in the first area is larger than the pad size in the second area.

Abstract: A memory control method for a rewritable non-volatile memory module which includes a plurality of physical groups is provided according to an exemplary embodiment of the disclosure. The memory control method includes: storing first table information into a first physical group among the physical groups, wherein the first table information records management information corresponding to a first logical range; storing second table information into a second physical group among the physical groups, wherein the second table information also records the management information corresponding to the first logical range; and instructing a reading of the second table information from the second physical group to obtain the management information corresponding to the first logical range in response to that the first physical group is in a default status.

Abstract: The present invention provides a decoding method, a memory controlling circuit unit, and a memory storage device. The decoding method includes: receiving a plurality of commands; reading a first physical programming unit to obtain a plurality of first data respectively by using a plurality of first reading voltage groups of a plurality of reading voltage groups based on a first read command of the plurality of commands and executing a first decoding operation in each of the plurality of first data, wherein a number of the plurality of first reading voltage groups is less than a number of the plurality of reading voltage groups; and executing other commands being different from the first read command of the plurality of commands when unsuccessfully executing the first decoding operation for each of the plurality of first data.

Abstract: The present invention provides a decoding method, a memory controlling circuit unit, and a memory storage device. The decoding method includes: receiving a plurality of commands; reading a first physical programming unit to obtain a plurality of first data respectively by using a plurality of first reading voltage groups of a plurality of reading voltage groups based on a first read command of the plurality of commands and executing a first decoding operation in each of the plurality of first data, wherein a number of the plurality of first reading voltage groups is less than a number of the plurality of reading voltage groups; and executing other commands being different from the first read command of the plurality of commands when unsuccessfully executing the first decoding operation for each of the plurality of first data.

Abstract: A memory control method for a rewritable non-volatile memory module which includes a plurality of physical groups is provided according to an exemplary embodiment of the disclosure. The memory control method includes: storing first table information into a first physical group among the physical groups, wherein the first table information records management information corresponding to a first logical range; storing second table information into a second physical group among the physical groups, wherein the second table information also records the management information corresponding to the first logical range; and instructing a reading of the second table information from the second physical group to obtain the management information corresponding to the first logical range in response to that the first physical group is in a default status.

Abstract: A data correcting method for a rewritable non-volatile memory module is provided. The method includes: if a first user data read from a first physical programming unit cannot be corrected by a corresponding first parity code, reading at least one group parity code of a first encoded group that the first physical programming unit belongs to into a buffer, sending the group parity code to a correcting circuit, and reading a user data from physical programming units belonging to the first encoded group into the buffer and sending the user data and the group parity code to the correcting circuit in batches to obtain a corrected first user data corresponding to the first user data.

Abstract: A data correcting method for a rewritable non-volatile memory module is provided. The method includes: if a first user data read from a first physical programming unit cannot be corrected by a corresponding first parity code, reading at least one group parity code of a first encoded group that the first physical programming unit belongs to into a buffer, sending the group parity code to a correcting circuit, and reading a user data from physical programming units belonging to the first encoded group into the buffer and sending the user data and the group parity code to the correcting circuit in batches to obtain a corrected first user data corresponding to the first user data.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The memory management method includes: grouping a plurality of non-spare physical erasing units into a first physical erasing unit and a second physical erasing unit, and a data updating frequency of the first physical erasing unit is lower than the data updating frequency of the second physical erasing unit; selecting a third physical erasing unit from the physical erasing units belonging to the first physical erasing unit; selecting a fourth physical erasing unit from spare physical erasing units, and copying valid data stored in the third physical erasing unit to the fourth physical erasing unit.

Abstract: A data storing method, a memory control circuit unit, and a memory storage apparatus are provided. The method includes recording a bit error count of every predetermined area of every physical erasing unit and determining whether the bit error count of one of the predetermined areas of the physical programming unit of the physical erasing unit is more than a threshold bit error count. If the bit error count of one of the predetermined areas of the physical programming unit of the physical erasing unit is more than the threshold bit error count, the method also includes storing data under a second programming mode after an erasing operation is performed on the physical easing unit. Accordingly, defective physical erasing units may be effectively employed to prolong the lifespan of the memory storage apparatus.

Abstract: A method for programming data, a memory storage device and a memory control circuit unit are provided. The method includes: receiving a writing command which instructs to write data to a logical address belonging to a logical programming unit; if a physical erasing unit of a physical programming unit which the logical programming unit is mapped to is a first type physical erasing unit, programming the data and a parity code corresponding to the data into the physical programming unit according to a first code rate; and if the physical erasing unit is a second type physical erasing unit, programming the data and the parity code corresponding to the data into the physical programming unit according to a second code rate. The first code rate is higher than the second code rate. Therefore, the lifespan of the physical erasing unit having a higher bit error rate may be extended.

Abstract: A data writing method, and a memory control circuit unit and a memory storage apparatus using the method are provided. The method includes: grouping the logical units into a first area and at least a second area according to the write counts of the logical units configured on the memory apparatus. The method also includes: determining whether the logical unit corresponding to the received data belongs to the first area. The method further includes: if the logical unit corresponding to the received data belongs to the first area, programming the received data into a first active physical erasing unit, and if the logical unit corresponding to the received data belongs to the first area, programming the received data into a second active physical erasing unit. Accordingly, the method may improve the efficiency of a garbage collection operation.

Abstract: A data writing method for a rewritable non-volatile memory module having a plurality of physical erasing units, and a memory control circuit unit and the memory storage apparatus are provided. The method includes grouping the physical erasing units into at least a data area, a backup area and a spare area; and setting a value obtained by summing a minimum threshold and a predetermined number as a garbage collecting threshold. The data writing method also includes getting at least one physical erasing unit from the spare area, writing data into the gotten physical erasing unit, associating the gotten physical erasing unit with the backup area and re-adjusting the garbage collecting threshold according to the number of physical erasing units associated with the backup area and the minimum threshold.

Abstract: A data writing method for a rewritable non-volatile memory module having a plurality of physical erasing units, and a memory control circuit unit and the memory storage apparatus are provided. The method includes: grouping the physical erasing units into at least a data area and a spare area; configuring a plurality of logical units for mapping to the physical erasing units of the data area; and dynamically reserving a predetermined number of physical erasing units dedicating to write sequential data. Accordingly, the method can fast write the sequential data with the page-based memory management.

Abstract: A data writing method, a memory storage device, and a memory controller for controlling a rewritable non-volatile memory module are provided. The rewritable non-volatile memory module includes at least one memory chip, and each memory chip includes a plurality of physical erasing units. The data writing method includes following steps. A data is written into at least one first physical erasing unit. A first error correction code and a second error correction code are respectively generated according to the data, where a number of bits correctable to the second error correction code is greater than a number of bits correctable to the first error correction code. The second error correction code is written into a second physical erasing unit. The first physical erasing unit and the second physical erasing unit belong to the same memory chip. Thereby, the memory space can be efficiently used.

Abstract: A data writing method for a rewritable non-volatile memory module is provided. The method includes receiving a write command and data corresponding to the write command from a host system and temporarily storing the data into a buffer memory, and the data includes a plurality of sub-data streams. The method still includes transmitting the sub-data streams into the rewritable non-volatile memory module, thereby writing the sub-data streams into at least one physical erasing unit of the rewritable non-volatile memory module. The method further includes generating parity information based on at least portion of the sub-data streams; storing the parity information into the buffer memory and deleting the data from the buffer memory. Accordingly, the method can effectively utilize the storage space of the buffer memory.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The memory management method includes: grouping a plurality of non-spare physical erasing units into a first physical erasing unit and a second physical erasing unit, and a data updating frequency of the first physical erasing unit is lower than the data updating frequency of the second physical erasing unit; selecting a third physical erasing unit from the physical erasing units belonging to the first physical erasing unit; selecting a fourth physical erasing unit from spare physical erasing units, and copying valid data stored in the third physical erasing unit to the fourth physical erasing unit.

Abstract: A data storing method, a memory control circuit unit, and a memory storage apparatus are provided. The method includes recording a bit error count of every predetermined area of every physical erasing unit and determining whether the bit error count of one of the predetermined areas of the physical programming unit of the physical erasing unit is more than a threshold bit error count. If the bit error count of one of the predetermined areas of the physical programming unit of the physical erasing unit is more than the threshold bit error count, the method also includes storing data under a second programming mode after an erasing operation is performed on the physical easing unit. Accordingly, defective physical erasing units may be effectively employed to prolong the lifespan of the memory storage apparatus.

Abstract: A method for programming data, a memory storage device and a memory control circuit unit are provided. The method includes: receiving a writing command which instructs to write data to a logical address belonging to a logical programming unit; if a physical erasing unit of a physical programming unit which the logical programming unit is mapped to is a first type physical erasing unit, programming the data and a parity code corresponding to the data into the physical programming unit according to a first code rate; and if the physical erasing unit is a second type physical erasing unit, programming the data and the parity code corresponding to the data into the physical programming unit according to a second code rate. The first code rate is higher than the second code rate. Therefore, the lifespan of the physical erasing unit having a higher bit error rate may be extended.

Abstract: A data writing method, and a memory control circuit unit and a memory storage apparatus using the method are provided. The method includes: grouping the logical units into a first area and at least a second area according to the write counts of the logical units configured on the memory apparatus. The method also includes: determining whether the logical unit corresponding to the received data belongs to the first area. The method further includes: if the logical unit corresponding to the received data belongs to the first area, programming the received data into a first active physical erasing unit, and if the logical unit corresponding to the received data belongs to the first area, programming the received data into a second active physical erasing unit. Accordingly, the method may improve the efficiency of a garbage collection operation.

Abstract: A firmware code loading method for loading a firmware code from a rewritable non-volatile memory module of a memory storage apparatus is provided. The method includes: obtaining a storage address for storing a first portion firmware code copy corresponding to a first portion of the firmware code in a first memory part; and obtaining a storage address for storing a second portion firmware code copy corresponding to a second portion of the firmware code in a second memory part. The method further includes: using a parallel mode or a interleave mode to load the first portion firmware code copy and the second portion firmware code copy respectively from the first memory part and the second memory part into a buffer memory. Accordingly, the method can effectively shorten the time of loading the firmware code.