Abstract: Within each of a pair of methods for forming each of a pair of microelectronic fabrications with reduced cracking within each of a pair of silicon oxide dielectric layers there is employed at least one stress reducing layer. The at least one stress reducing layer is formed of a silicon and nitrogen containing dielectric material, such as a silicon nitride dielectric material or a silicon oxynitride dielectric material.

Abstract: Although CMP has been widely used with generally good results, one remaining problem is the occasional appearance of micro-scratches on the finished surface. Such micro-scratches may also be generated as a byproduct of processes other than CMP. The present invention solves this problem by exposing the surface in question to a gas plasma after the scratch generating process has been completed. Additionally, the invention discloses that the small amount of material that gets removed through exposure to the plasma may be replaced by deposition either in-situ or ex-situ. The added material may be the same as the removed material or a different material.

Abstract: Within each of a pair of methods for forming each of a pair of microelectronic fabrications with reduced cracking within each of a pair of silicon oxide dielectric layers there is employed at least one stress reducing layer. The at least one stress reducing layer is formed of a silicon and nitrogen containing dielectric material, such as a silicon nitride dielectric material or a silicon oxynitride dielectric material.

Abstract: A new method is provided for the removal of metal residue or nodules from surfaces that are target surfaces during the process of metal sputtering. A polishing bit is applied in a rotating manner to a surface on which nodules have been formed, this application removes the nodules from the target surface and prepares the surface for further processing steps.

Abstract: A new method is provided for the removal of metal residue or nodules from surfaces that are target surfaces during the process of metal sputtering. A polishing bit is applied in a rotating manner to a surface on which nodules have been formed, this application removes the nodules from the target surface and prepares the surface for further processing steps.

Abstract: Defects in semiconductor wafers caused by a wafer clamp ring are reduced by polishing the surfaces of the clamp ring that engage and apply clamping force to the wafer. A polishing tool includes a circular plate supported on the stationary base. A layer or pad of polishing material, such as silicon carbide diamond, is deposited over the plate. The clamp ring is placed on the plate such that clamping surfaces of the ring engage the polishing material on the plate, and the ring is rotated to effect polishing of the clamping surfaces.