Abstract: Described is a monolithic integrated circuit for use in quantum computing based on single and multiple coupled quantum dot electron- and hole-spin qubits monolithically integrated with the mm-wave spin manipulation and readout circuitry in commercial complementary metal-oxide-semiconductor (CMOS) technology. The integrated circuit includes a plurality of n-channel or p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) cascodes each including a single-spin qubit or two coupled quantum dot qubits formed in an undoped semiconductor film adjacent at least one top gate. There is also a back gate formed in a silicon substrate adjacent a buried oxide layer or the at least one top gate, where the back gate controls the electron or hole entanglement and exchange interaction between the two coupled quantum dot qubits. The monolithic integrated circuits described may be used for monolithically integrated semiconductor quantum processors for quantum information processing.

Abstract: A semiconductor device is formed by bonding a first semiconductor die and a second semiconductor die at bonding pads in the first semiconductor die with bonding vias in the second semiconductor die, and by bonding dielectric layers in the first semiconductor die and in the second semiconductor die. Omitting bonding pads from the second semiconductor device, and instead using the bonding vias to bond the first and second semiconductor dies, provides a greater amount of spacing between the bonding vias of the second semiconductor die in that the bonding vias have lesser widths than bonding pads. This enables a greater amount of dielectric material of the dielectric layers of the second semiconductor device to be placed between the bonding vias without (or with minimally) increasing the lateral size of the second semiconductor die.

Abstract: One aspect of the present disclosure pertains to a semiconductor device. The semiconductor device includes a semiconductor substrate and a transistor formed over the semiconductor substrate. The transistor includes a first source/drain (S/D) feature, a second S/D feature, a channel region interposed between the first and second S/D features, and a gate stack engaging the channel region. The semiconductor device includes a first S/D contact landing on a top surface of the first S/D feature, a second S/D contact landing on a top surface of the second S/D feature, and a dielectric plug penetrating through the semiconductor substrate and landing on a bottom surface of the first S/D feature. The dielectric plug spans a width equal to or smaller than a width of the first S/D feature.

Abstract: A two-phase immersion-type heat dissipation structure having high density heat dissipation fins is provided. The two-phase immersion-type heat dissipation structure having high density heat dissipation fins includes a heat dissipation substrate, a plurality of sheet-like heat dissipation fins, and a reinforcement structure. A bottom surface of the heat dissipation substrate is in contact with a heating element immersed in a two-phase coolant. The plurality of sheet-like heat dissipation fins are integrally formed on an upper surface of the heat dissipation substrate and arranged in high density. An angle between at least one of the sheet-like heat dissipation fins and the upper surface of the heat dissipation substrate is from 60° to 120°. At least one of the sheet-like heat dissipation fins has a length from 50 mm to 120 mm, a width from 0.1 mm to 0.35 mm, and a height from 2 mm to 8 mm.

Abstract: The present disclosure provides a driving circuitry, a driving method, a driving module, and a display device. The driving circuitry includes a driving signal generation circuitry, a gating circuitry, an output control circuitry and an output circuitry. The driving signal generation circuitry is configured to perform a shifting operation on an (N?1)th-level driving signal to obtain an Nth-level driving signal. The gating circuitry is configured to write a gating input signal into a first node under the control of a gating control signal. The output control circuitry is configured to perform an NAND operation on the Nth-level driving signal and a potential at a second end of the output control circuitry to obtain a first output signal. The output circuitry is configured to perform phase inversion on the first output signal to obtain and provide an output driving signal through an output driving end, where N is a positive integer.

Abstract: A rotary digging drill includes three disk drills arranged in ascending order of diameter, each with a cavity therein. The disk drill includes two circular ring seats arranged side by side, multiple toothed digging buckets disposed at peripheries of the two circular ring seats, and ring gear racks respectively disposed on inner sides of the two circular ring seats. Adjacent ones of the disk drills have the toothed digging buckets facing opposite directions, and the disk drills all rotate in a direction facing a large opening, enabling adjacent two of the three disk drills to rotate in opposite directions. The rotary digging drill further includes three disk drill supports that match the three disk drills in quantity and are configured to support and drive the three disk drills.

Abstract: The present disclosure proposes a method, apparatus and computer program product for sentence representation generation for cross-lingual retrieval. A target sentence may be obtained. An initial target sentence representation of the target sentence may be generated through an encoder, the encoder pretrained through a contrastive context prediction mechanism. A target sentence representation of the target sentence for cross-lingual retrieval may be generated based on the initial target sentence representation through cross-lingual calibration.

Abstract: A method for cyclic biochemical conversion of carbon dioxide and hot gas cogeneration in depleted oil and gas reservoirs includes: S1: selecting a target depleted oil and gas reservoir; S2: adjusting a temperature of the target depleted oil and gas reservoir to 30° C. to 70° C. and detecting whether formation water of the target depleted oil and gas reservoir contains methanogenic archaea, in which if no methanogenic archaeon is contained, then methanogenic archaea is injected and step S3 is proceeded, and if methanogenic archaea are contained, then step S3 is proceeded directly; S3: injecting a mixture of carbon dioxide and hydrogen into the target depleted oil and gas reservoir through a gas injection well; and S4: shutting down the gas injection well to wait for the methanogenic archaea to convert carbon dioxide and hydrogen into methane and exploiting the methane and heat energy in the target depleted oil and gas reservoir.

Abstract: An interconnect fabrication method is disclosed herein that utilizes a disposable etch stop hard mask over a gate structure during source/drain contact formation and replaces the disposable etch stop hard mask with a dielectric feature (in some embodiments, dielectric layers having a lower dielectric constant than a dielectric constant of dielectric layers of the disposable etch stop hard mask) before gate contact formation. An exemplary device includes a contact etch stop layer (CESL) having a first sidewall CESL portion and a second sidewall CESL portion separated by a spacing and a dielectric feature disposed over a gate structure, where the dielectric feature and the gate structure fill the spacing between the first sidewall CESL portion and the second sidewall CESL portion. The dielectric feature includes a bulk dielectric over a dielectric liner. The dielectric liner separates the bulk dielectric from the gate structure and the CESL.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes an isolation layer over the base portion and surrounding the fin portion. The semiconductor device structure includes a metal gate stack over the isolation layer and wrapping around an upper part of the fin portion. The metal gate stack includes a gate dielectric layer and a metal gate electrode layer over the gate dielectric layer, and the gate dielectric layer includes fluorine. A first part of the isolation layer is not covered by the metal gate stack, the first part includes fluorine, and a first concentration of fluorine in the first part increases toward a first top surface of the first part.

Abstract: Various embodiments of the present application are directed towards an integrated chip structure. The integrated chip structure includes a bottom electrode over a substrate, a top electrode over the bottom electrode, and a capacitor insulator structure between the bottom electrode and the top electrode. The capacitor insulator structure includes a first dielectric layer, a second dielectric layer over the first dielectric layer, and a third dielectric layer over the second dielectric layer. The first dielectric layer includes a first dielectric material. The second dielectric layer includes a second dielectric material that is different than the first dielectric material. The second dielectric material is an amorphous solid. The third dielectric layer includes the first dielectric material.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.

Abstract: A driving circuit includes a driving signal generation circuit, a gating circuit, an output control circuit, an output circuit, a voltage control circuit and a second node control circuit; the driving signal generation circuit generates an Nth stage of driving signal; the output control circuit controls to connect the first control node and the second node under the control of the potential of the first node; the gating circuit writes a gating input signal into the first node under the control of a gating control signal; the voltage control circuit controls a potential of the second node according to the potential of the first node; the second node control circuit controls to connect the second node and the first voltage terminal under the control of the potential of the first node.

Abstract: It is provided an apparatus comprising interface circuitry, machine-readable instructions, and processing circuitry to execute the machine-readable instructions. The machine-readable instructions comprise instructions to obtain a first data structure, the first data structure indicating which data block of a block-based core system image is available in a local storage circuitry. The machine-readable instructions further comprise instructions to check, during loading of at least one component of a software, if a data block required during execution of the software is available in the local storage circuitry according to the first data structure. The machine-readable instructions further comprise instructions to obtain the data block from a server if the required data block is not available, wherein the server is storing a copy of the core system image.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a bottom electrode over a substrate. A dielectric layer is formed on the bottom electrode. A first top electrode layer is deposited on the dielectric layer by a first deposition process. A diffusion barrier layer is deposited on the first top electrode layer by a second deposition process different from the first deposition process. A second top electrode layer is deposited on the diffusion barrier layer by a third deposition. The third deposition process is the same as the first deposition process.

Abstract: A two-phase immersion-type heat dissipation device is provided. The two-phase immersion-type heat dissipation device includes a heat dissipation substrate and a plurality of reinforced fins. The heat dissipation substrate has a first surface and a second surface configured to be in contact with a heating element. The first surface is opposite to the second surface and is arranged away from the heating element. The plurality of reinforced fins are integrally formed on the first surface of the heat dissipation substrate, and a thickness of each of the plurality of reinforced fins is less than 1 mm. According to a scanning electron microscopy image of electron backscattered diffraction, a median of local misorientation distribution of the plurality of reinforced fins is greater than 1.6 times a median of local misorientation distribution of the heat dissipation substrate.

Abstract: Semiconductor structures and methods are provided. An exemplary semiconductor structure according to the present disclosure includes a two-port static random access memory (SRAM) cell having a write port portion and a read port portion electrically coupled to the write port portion. The read port portion includes a transistor having a first source/drain feature and a second source/drain feature. The semiconductor structure also includes a first plurality of metal lines comprising a write bit line and a complementary write bit line, wherein the first plurality of metal lines are positioned at a first metal interconnect layer, wherein the first metal interconnect layer is disposed over the first source/drain feature. The semiconductor structure also includes a read bit line positioned at a second metal interconnect layer, where the second metal interconnect layer is disposed under the first source/drain feature.

Abstract: A shift register includes a shift module configured for causing the cascade signal output end to output a cascade signal in response to a signal of the input signal end; an reverse output module configured for causing the reverse signal output end to output a signal reverse to the cascade signal output end in response to a signal of the cascade signal output end; a latch module configured for causing an output end of the latch module to output a control signal of the masking signal end in response to signals of the cascade signal output end and the reverse signal output end of a previous level; and a selection output module configured for providing a signal of the first power supply end or the second power supply end to the driving signal output end in response to a signal of the output end of the latch module.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first wafer is provided. The first wafer includes a first substrate and a first device layer. A second wafer is provided. The second wafer includes a second substrate and a second device layer. The second device layer is bonded to the first device layer. An edge trimming process is performed on the first wafer and the second wafer to expose a first upper surface of the first substrate and a second upper surface of the first substrate and to form a damaged region in the first substrate below the first upper surface and the second upper surface. The second upper surface is higher than the first upper surface. A first photoresist layer is formed. The first photoresist layer is located on the second wafer and the second upper surface and exposes the first upper surface and the damaged region. The damaged region is removed by using the first photoresist layer as a mask. The first photoresist layer is removed.

Abstract: Semiconductor structures and methods are provided. An exemplary semiconductor structure according to the present disclosure includes a two-port static random access memory (SRAM) cell having a write port portion and a read port portion electrically coupled to the write port portion. The read port portion includes a transistor having a gate structure. The semiconductor structure also includes a first plurality of metal lines comprising a write bit line and a complementary write bit line are positioned at a first interconnect layer disposed over the gate structure and a read word line positioned at a second interconnect layer and electrically coupled to the gate structure, the second interconnect layer is disposed under the gate structure.