Abstract: Disclosed is a method for synthesizing N-(phenylsulfonyl)benzamide compound and intermediate thereof. The method comprises a method for synthesizing a compound 1, comprising conducting a Buchwald-Hartwig coupling reaction as shown below with compound A and compound B in a solvent and in the presence of a base and a palladium catalyst to obtain the compound 1; wherein R is C1-C8 alkyl. The present disclosure synthesizes three intermediate compounds required by the target compound and their preparation methods for the first time. Using the method disclosed in the present disclosure to synthesize the target compound 3 has the advantages of high yield, good purity, easy-to-obtain reaction raw materials, suitable for industrial production.

Abstract: Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a source/drain region arranged within a substrate. A first select gate is arranged over the substrate, and a first memory gate is arranged over the substrate and separated from the source/drain region by the first select gate. An inter-gate dielectric structure is arranged between the first memory gate and the first select gate. The inter-gate dielectric structure extends under the first memory gate. A height of the inter-gate dielectric structure decreases along a direction extending from the first select gate to the first memory gate.

Abstract: A hospital human resource information management file cabinet is provided, including a support base plate, a lower surface of which is fixedly connected to upper surfaces of three fan assemblies; left ends of the three fan assemblies are respectively connected to outer surfaces of three first conduits, and front ends of the three first conduits are in communication with back ends of three second conduits. The file cabinet speeds up air flow rate on surfaces of the files therein, prevents moisture causing damage to the files, reduces information loss, and continuously treats the moisture inside, which in turn guarantees the service life of the file cabinet.

Abstract: A structure and a method of forming are provided. The structure includes a first dielectric layer overlying a first substrate. A first connection pad is disposed in a top surface of the first dielectric layer and contacts a first redistribution line. A first dummy pad is disposed in the top surface of the first dielectric layer, the first dummy pad contacting the first redistribution line. A second dielectric layer overlies a second substrate. A second connection pad and a second dummy pad are disposed in the top surface of the second dielectric layer, the second connection pad bonded to the first connection pad, and the first dummy pad positioned in a manner that is offset from the second dummy pad so that the first dummy pad and the second dummy pad do not contact each other.

Abstract: A method according to the present disclosure includes receiving a workpiece including a gate structure, a first source/drain (S/D) feature, a second S/D feature, a first dielectric layer over the gate structure, the first S/D feature, the second S/D feature, a first S/D contact over the first S/D feature, a second S/D contact over the second S/D feature, a first etch stop layer (ESL) over the first dielectric layer, and a second dielectric layer over the first ESL, forming a S/D contact via through the second dielectric layer and the first ESL to couple to the first S/D contact, forming a gate contact opening through the second dielectric layer, the first ESL, and the first dielectric layer to expose the gate structure, and forming a common rail opening adjoining the gate contact opening to expose the second S/D contact, and forming a common rail contact in the common rail opening.

Abstract: Example methods and devices are disclosed. One example method includes receiving, by a first device, configuration information from a second device, where the configuration information is used by the first device to report information about an association relationship between a zero power-reference signal resource and a non-zero power-reference signal resource. The first device can then report the information about the association relationship based on the configuration information.

Abstract: Semiconductor structures and methods of forming the same are provided. A semiconductor structure includes gate electrodes and first insulation patterns laterally disposed and alternately arranged on a substrate, a gate dielectric layer disposed on the gate electrodes and the first insulation patterns, at least one channel pattern disposed on the gate dielectric layer, source electrodes and drain electrodes laterally disposed and alternately arranged on the channel pattern, and second insulation patterns disposed on the channel pattern between the source and drain electrodes. Besides, from a top view, each of the drain electrodes is overlapped with one of the first insulation patterns.

Abstract: The method includes: performing blockchain storage area allocation for transaction broadcast data; establishing a peer-to-peer transmission mechanism and a trust mechanism between nodes by the blockchain; acquiring network transaction broadcast data that needs to be subjected to blockchain storage; and recording, storing and managing the network transaction broadcast data; where the network transaction broadcast data is managed by dividing blockchain data into hot data and cold data; the hot data is stored in each of the blockchain nodes; and the cold data is divided into N parts to be correspondingly stored in N nodes of the blockchain nodes; and the hot data is data that needs to be frequently accessed by computing nodes, and the cold data is data that is infrequently accessed.

Abstract: A device includes a first biometric sensor formed on a substrate and configured to access a first biometric feature of a user, and a second biometric sensor arranged under the first biometric sensor and configured to access second a biometric feature of the user. The second biometric sensor includes a light emitter configured to emit light to reach the user through the substrate and receive a reflection light for deriving the second biometric feature.

Abstract: The invention relates to the field of powder coatings, and specifically discloses a heat-curable powder coating composition and a preparation method thereof. The powder coating composition comprises: i) component A comprising at least one amorphous solid polyester resin compound having a Michael donor reactive group; ii) component B comprising at least one amorphous ethylenically unsaturated solid polyester resin with a Michael acceptor reactive group; iii) component C comprising at least one (semi) crystalline solid reactive diluent; iv) component D comprising at least one epoxy group-containing solid substance; v) component E comprising at least one basic catalyst. The present invention also discloses a preparation method of the above heat-curable powder coating composition. By adopting the invention, ultra-low temperature curing can be realized. The curing temperature is as low as 90-110° C., and the curing time is short.

Abstract: A plurality of vertical stacks may be formed over a substrate. Each of the vertical stacks includes, from bottom to top, a bottom electrode, a dielectric pillar, and a top electrode. A continuous active layer and a gate dielectric layer may be formed over the plurality of vertical stacks. Sacrificial spacers are formed around the plurality of vertical stacks. At least one dielectric wall structure may be formed around the sacrificial spacers by filling gaps between neighboring pairs of the sacrificial spacers with a dielectric fill material. The sacrificial spacers are replaced with gate electrodes. Each of the gate electrodes may laterally surround a respective row of vertical stacks that are arranged along a first horizontal direction.

Abstract: The present invention provides a multi-phase structured UV-curable powder coating resin and a preparation method thereof, comprising (1) obtaining an emulsion of a liquid UV resin by heating the liquid UV resin and an emulsifier, dispersing, and adding deionized water for emulsification; (2) melting and dispersing a solid UV resin, a phase change agent, an emulsifier, and deionized water; adding the emulsion of the liquid UV resin with stirring to thoroughly mix; temperature is lowered during the stirring to obtain a suspension; (3) press filtering the suspension of the UV-curable powder coating resin to obtain a filter cake; (4) drying and classifying the filter cake to obtain the multi-phase structured UV-curable powder coating resin. The multi-phase structured UV-curable powder coating resin is prepared from the aforementioned method. The present disclosure has the properties of both the liquid and solid UV resin and can be sprayed as a powder coating.

Abstract: An energy dispatch system, apparatus, and method are disclosed. The energy dispatch system includes a server and multiple site controllers respectively corresponding to multiple users. Each user corresponds to an energy storage device, and each energy storage device has a stage of charge. The server determines a scheduled power consumption target of each scheduling period for each user according to a total support power, multiple power consumption references of the users, and the stages of charge. The server transmits each scheduled power consumption target corresponding to a first scheduling period of the scheduling periods to the corresponding site controller.

Abstract: A bonded assembly of a first wafer including a first semiconductor substrate and a second wafer including a second semiconductor substrate may be formed. The second semiconductor substrate may be thinned to a first thickness, and an inter-wafer moat trench may be formed at a periphery of the bonded assembly. A protective material layer may be formed in the inter-wafer moat trench and over the backside surface of the second semiconductor substrate. A peripheral portion of the second semiconductor substrate located outside the inter-wafer moat trench may be removed, and a cylindrical portion of the protective material layer laterally surrounds a remaining portion of the bonded assembly. The second semiconductor substrate may be thinned to a second thickness by performing at least one thinning process while the cylindrical portion of the protective material layer protects the remaining portion of the bonded assembly.

Abstract: Disclosed herein are devices and methods that use aqueous two phase systems and lateral flow assays to detect target analytes in a sample. These devices and methods may be used to diagnose a disease or condition in a biological sample, such as blood or serum. In addition, these devices and methods may be used to detect allergens in a food samples or contaminants, such as environmental toxins, in water samples. Device and kit components may be conveniently assembled in a portable container and are amenable to actuation in most settings. The devices are simple to use, requiring a non-trained operator to simply add the sample to the device. Conveniently, the time it takes to detect the target analyte is very short. Thus, the devices and methods disclosed herein provide novel and useful means for point-of-care.

Abstract: A semiconductor memory structure includes a memory cell, an encapsulation layer over a sidewall of the memory cell, and a nucleation layer between the sidewall of the memory cell and the encapsulation layer. The memory cell includes a top electrode, a bottom electrode and a data-storage element sandwiched between the bottom electrode and the top electrode. The nucleation layer includes metal oxide.

Abstract: A motor drive unit for driving a motor of a motorized window treatment may comprise software-based and hardware-based implementations of a process for detecting and resolving a stall condition in the motor, where the hardware-based implementation is configured to reduce power delivered to the motor if the software-based implementation has not first reduced the power to the motor. A control circuit may detect a stall condition of the motor, and reduce the power delivered to the motor after a first period of time from first detecting the stall condition. The motor drive unit may comprise a stall prevention circuit configured to reduce the power delivered to the motor after a second period of time (e.g., longer than the first period of time) from determining that a rotational sensing circuit is not generating a sensor signal while the control circuit is generating a drive signal to rotate the motor.

Abstract: An operating method for a Battery Energy Storage System (BESS) is provided. The BESS includes a processor and a plurality of energy storage units coupled in parallel, wherein each energy storage unit includes a Power Conservation System (PCS) and a battery module. The operating method includes performing following steps by the processor: obtaining a dedicated operation power of the BESS; calculating a remaining operation period of each energy storage unit according to a maximum operation power of each PCS and a remaining power quantity of each battery module; determining an operational order corresponding to the plurality of energy storage units according to the remaining operation period of the plurality of energy storage units and the dedicated operation power of the BESS; and controlling an operation of each energy storage unit according to the operational order.