Abstract: A semiconductor structure includes a substrate, an interconnection structure disposed over the substrate and a first memory cell. The first memory cell is disposed over the substrate and embedded in dielectric layers of the interconnection structure. The first memory cell includes a first transistor and a first data storage structure. The first transistor is disposed on a first base dielectric layer and embedded in a first dielectric layer. The first data storage structure is embedded in a second dielectric layer and electrically connected to the first transistor. The first data storage structure includes a first electrode, a second electrode and a storage layer sandwiched between the first electrode and the second electrode.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A two-phase immersion-type heat dissipation structure having a porous structure is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, a plurality of fins, and a reinforcement frame. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fins are integrally formed on the fin surface. A porous structure is covered onto at least one portion of the fin surface and at least one portion of the plurality of fins, and has a porosity of from 10% to 50% and a thickness that is from 0.1 mm to 1 mm. The reinforcement frame is bonded to the heat dissipation substrate and surrounds another one portion of the plurality of fins.

Abstract: A two-phase immersion-type heat dissipation structure is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate and a plurality of non-vertical fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other. The non-fin surface is configured to be in contact with a heating element immersed in a two-phase coolant. The fin surface is connected with the non-vertical fins, a cross-sectional contour of one of the non-vertical fins has a top end point and a bottom end point connected with the fin surface, and the top and bottom end points are opposite to each other. A length of a cross-sectional contour line defined from the top end point to the bottom end point is greater than a perpendicular line length of a perpendicular line defined from the top end point to the fin surface.

Abstract: A memory device and method of forming the same are provided. The memory device includes a first memory cell disposed over a substrate. The first memory cell includes a transistor and a data storage structure coupled to the transistor. The transistor includes a gate pillar structure, a channel layer laterally wrapping around the gate pillar structure, a source electrode surrounding the channel layer, and a drain electrode surrounding the channel layer. The drain electrode is separated from the source electrode a dielectric layer therebetween. The data storage structure includes a data storage layer surrounding the channel layer and sandwiched between a first electrode and a second electrode. The drain electrode of the transistor and the first electrode of the data storage structure share a common conductive layer.

Abstract: A high fiber count, ferrule-terminated optical fiber cable assembly includes a high density two-dimensional array of optical fibers extending through a single aperture of a ferrule, with the optical fibers within the ferrule aperture each having a core, a cladding layer, and a hard coating layer (e.g., having an elastic modulus greater than 100 MPa). Hard coated optical fibers are arranged very close to (e.g., within two microns of, or in contact with) one another, with a substantially constant fiber pitch within the ferrule. A fusion splice region may be provided between ferrule terminated hard-coated optical fibers and conventional optical fibers lacking a hard coating. High optical fiber density and compact ferrule size permits a significant reduction in connector width, enabling a numerical reduction or elimination of staggered lengths of cable portions for coupling ultra-high density optical fiber cables.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: A two-phase immersion-type heat dissipation structure having skived fin with high porosity is provided. The two-phase immersion-type heat dissipation structure having skived fin with high porosity includes a porous heat dissipation structure having a total porosity that is equal to or greater than 5%. The porous heat dissipation structure includes a porous substrate and a plurality of porous and skived fins. The porous substrate has a first surface and a second surface that face away from each other. The second surface of the porous substrate is configured to be in contact with a heating element that is immersed in a two-phase coolant. The plurality of porous and skived fins are integrally formed on the first surface of the porous substrate by skiving. A first porosity of the plurality of porous and skived fins is greater than a second porosity of the porous substrate.

Abstract: A security apparatus having a lock head and lock body is disclosed. The lock head includes lock fingers capable of shifting horizontally. When collapsed, the lock fingers may be withdrawn from a security slot of a portable electronic device. Engaging members are set at the lock head and lock body respectively such that the two can be secured together or be readily removable from each other when needed. The lock body includes a locking mechanism operably coupled to the lock head. Configurations of the lock fingers are alterable via the locking mechanism. The lock head and the locking mechanism are on different planes.

Abstract: A display substrate and related devices are provided. The display substrate includes a plurality of first sub-pixels, second sub-pixels and third sub-pixels. In a first direction, the first sub-pixels and the third sub-pixels are arranged alternately to form a plurality of first sub-pixel rows, the second sub-pixels form a plurality of second sub-pixel rows, the first sub-pixel rows and the second sub-pixel rows are arranged alternately in a second direction, connection lines of center points of two first sub-pixels and two third sub-pixels form a first virtual quadrilateral, the two first sub-pixels are located at two vertex angles of the first virtual quadrilateral which are opposite to each other, one second sub-pixel is located within the first virtual quadrilateral, and the first virtual quadrilateral includes two interior angles each being equal to 90° and two interior angles each being not equal to 90°.

Abstract: A method for determining phase locking of critical arc light includes: step 1: monitoring and collecting light radiation intensity of an arc inside a switch cabinet in real time, and converting the collected light radiation intensity into an electrical signal; step 2: extracting a power-frequency fundamental wave of the electrical signal, comparing an amplitude of the power-frequency fundamental wave of the electrical signal with a first threshold, and generating a pre-warning signal based on a comparison result of the first threshold; step 3: comparing the amplitude of the power-frequency fundamental wave of the electrical signal with a second threshold voltage, and generating a control signal based on a comparison result of the second threshold voltage and a protection time threshold; and step 4: protecting the switch cabinet under the critical arc light environment based on the pre-warning signal and the control signal.

Abstract: A multicolor light mixing module includes a collimator lens disposed on a light-entrance axis and having first and second lens portions, a laser source set including first and second lighting units arranged sequentially for emitting first and second color lights respectively, a reflective unit, a reflective diffusing member and a lens array disposed corresponding to at least one of the first and second lens portions for mixing the first and second color lights. The reflective unit is obliquely disposed on the light-entrance axis and opposite to the first and second lighting units for reflecting the first and second color lights to the first lens portion along the light-entrance axis. The reflective diffusing member is disposed at a side of the collimator lens to homogenize the first and second laser lights and reflect the first and second color lights to the second lens portion along a first light-exit axis.

Abstract: A manufacturing system includes a substrate disposed on a conveyer system. The conveyer system includes a pair of side supports. The substrate is moved on the conveyer system until the substrate is disposed over a bottom support block. The bottom support block is raised to physically contact the substrate. A transfer arm module is provided. The transfer arm module includes a flat bottom surface and an opening formed in the flat bottom surface. The transfer arm module is disposed with the flat bottom surface physically contacting the substrate opposite the bottom support block. A vacuum is enabled through the opening of the transfer arm module. The substrate is lifted off the bottom support block using the vacuum. The substrate is moved over a printing pallet using the transfer arm module. The vacuum is disabled when the substrate is in a positioning area of the printing pallet.

Abstract: A photonic integrated circuit structure includes a substrate, a waveguide structure and a spot size converter. The waveguide structure is disposed over a surface of the substrate and has a receiving end. The spot size converter includes a concave mirror and a curved mirror. The concave mirror and the curved mirror are opposite to each other and have a common focus. The concave mirror is arranged to reflect a parallel beam from a transmitting end such that a first reflected beam is able to converge at the common focus, and the curved mirror is arranged to reflect the first reflected beam such that a second reflected beam is directed parallel to the receiving end of the waveguide structure.

Abstract: A network quality measurement method and system are provided. In the method, a movement path and a movement speed of a vehicle device are determined according to a size of a space and an endurance time of the vehicle device, and the vehicle device is controlled to move on the movement path at the movement speed. During a movement of the vehicle device, a network quality in the space is measured according to a measurement frequency to generate network quality data. Whether the network quality in the space is changed is determined according to the network quality data. Whether there is an obstacle around the vehicle device is detected. When it is determined that the network quality in the space is changed or the obstacle is detected around the vehicle device, at least one of the movement path, the movement speed, and the measurement frequency is adjusted.

Abstract: A device includes a touch-mode biometric sensor having a first side facing toward a user and a second side opposite to the first side, and a display arranged under the touch-mode biometric sensor and adjacent to the second side and configured to display an image in response to a sensing result, associated with a biometric feature of the user, of the touch-mode biometric sensor.

Abstract: Method for source localization for cable cut prevention using distributed fiber optic sensing (DFOS)/distributed acoustic sensing (DAS) is described that is robust/immune to underground propagation speed uncertainty. The method estimates the location of a vibration source while considering any uncertainty of vibration propagation speed and formulates the localization as an optimization problem, and both location of the sources and the propagation speed are treated as unknown. This advantageously enables our method to adapt to variances of the velocity and produce a better generalized performance with respect to environmental changes experienced in the field. Our method operates using a DFOS system and AI techniques as an integrated solution for vibration source localization along an entire optical sensor fiber cable route and process real-time DFOS data and extract features that are related to a location of a source of vibrations that may threaten optical fiber facilities.

Abstract: This application relates to the field of lighting, and discloses an LED filament. The LED filament includes an LED chip unit, a light conversion layer, and an electrode. The light conversion layer covers the LED chip unit and part of the electrode, and a color of a light emitted by the LED filament after lighting is different from a color of the light conversion layer. This application has the characteristics of uniform light emission and good heat dissipation effect.