Abstract: Embodiments of the invention generally provide an electrochemical processing system configured to provide multiple chemistries for a single plating process. The multiple chemistries are generally delivered to individual plating cells positioned on the processing system. The individual chemistries may generally be used to conduct direct plating on a barrier layer, alloy plating, plating on a thin seed layer, optimized feature fill and bulk fill plating, plating with minimized defects, and/or any other plating process wherein multiple chemistries may be utilized to take advantage of the desirable characteristics of each chemistry.

Abstract: A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.

Abstract: Embodiments of the invention relate to an apparatus and method of depositing a titanium silicon nitride layer by cyclical deposition. In one aspect, a titanium silicon nitride layer having a variable content or a controlled composition of titanium, silicon, and nitrogen through the depth of the layer may be formed. One embodiment of this variable content titanium silicon nitride layer or tuned titanium silicon nitride layer includes a bottom sub-layer of TiSiX1NY1, a middle sub-layer of TiSiX2NY2, and a top sub-layer of TiSiX3NY3 in which X1 is less than X2 and X3 is less than X2. Another embodiment of a variable content titanium silicon nitride layer includes a bottom sub-layer of TiSiX1NY1 and a top sub-layer of TiSiX2NY2 in which X2 is greater than X1. Still another embodiment of a variable content titanium silicon nitride layer includes a bottom sub-layer of TiSiX1NY1, a middle sub-layer of TiSiX2NY2, and a top sub-layer of TiSiX3NY3 in which X1 is greater than X2 and X3 is greater than X2.

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

Abstract: Methods of depositing titanium nitride (TiN) films on a substrate are disclosed. The titanium nitride (TiN) films may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor and a NH3 gas on the substrate. The titanium-containing precursor and the NH3 gas react to form the titanium nitride (TiN) layer on the substrate. The titanium nitride (TiN) films are compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, an interconnect structure is fabricated. The titanium nitride films may also be used as an electrode of a three-dimensional capacitor structure such as for example, trench capacitors and crown capacitors.

Abstract: An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode deposition process comprising a chemical vapor deposition (CVD) step and a cyclical deposition step. The dual-mode deposition process may be performed in a single process chamber.

Abstract: A lid for a semiconductor system, an exemplary embodiment of which includes a support having opposed first and second opposed surfaces. A valve is coupled to the first surface. A baffle plate is mounted to the second surface. The valve is coupled to the support to direct a flow of fluid along a path in original direction and at an injection velocity. The baffle plate is disposed in the path to disperse the flow of fluid in a plane extending transversely to the original direction. In one embodiment the valve is mounted to a W-seal that is in turn mounted to the first surface of the support.

Abstract: Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support.

Abstract: A process for treating refractory metal-boron layers deposited by atomic layer deposition resulting in the formation of a ternary amorphous refractory metal-nitrogen-boron film is disclosed. The resulting ternary film remains amorphous following thermal annealing at temperatures up to 800° C. The ternary films are formed following thermal annealing in a reactive nitrogen-containing gas. Subsequent processing does not disrupt the amorphous character of the ternary film. arrangement where a blended solution is supplied to a remote point of use.

Abstract: Embodiments of this invention relate to a processing chamber and methods of distributing reactants therein to facilitate cyclical layer deposition of films on a substrate. One embodiment of a substrate processing chamber includes a chamber body and a substrate support disposed in the chamber body. A lid is disposed on the chamber body. An injection plate having a recess is mounted on the lid. A bottom surface of the recess has a plurality of apertures limited to an area proximate a central portion of the substrate receiving surface of the substrate support. Another embodiment of a substrate processing chamber includes a chamber body having interior sidewalls and an interior bottom wall. A top liner is disposed along the interior sidewalls of the chamber body. A bottom liner is disposed on the interior bottom wall of the chamber body. A gap is defined between the top liner and the bottom liner to allow a purge gas to be introduced therethrough.

Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy).

Abstract: Embodiments of the invention relate to an apparatus and method of depositing a titanium silicon nitride layer by cyclical deposition. In one aspect, a titanium silicon nitride layer having a variable content or a controlled composition of titanium, silicon, and nitrogen through the depth of the layer may be formed. One embodiment of this variable content titanium silicon nitride layer or tuned titanium silicon nitride layer includes a bottom sub-layer of TiSiX1NY1, a middle sub-layer of TiSiX2NY2, and a top sub-layer of TiSiX3NY3 in which X1 is less than X2 and X3 is less than X2. Another embodiment of a variable content titanium silicon nitride layer includes a bottom sub-layer of TiSiX1NY1 and a top sub-layer of TiSiX2NY2 in which X2 is greater than X1. Still another embodiment of a variable content titanium silicon nitride layer includes a bottom sub-layer of TiSiX1NY1, a middle sub-layer of TiSiX2NY2, and a top sub-layer of TiSiX3NY3 in which X1 is greater than X2 and X3 is greater than X2.

Abstract: A method to selectively deposit a barrier layer on a metal film formed on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the metal film formed on the substrate in a process chamber.

Abstract: The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.

Abstract: An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.

Abstract: A method of tungsten deposition for dynamic random access memory (DRAM) applications is described. The DRAM devices typically include two electrodes separated by a dielectric material. At least one of the two electrodes comprises a tungsten-based material. The tungsten-based material may be formed using a cyclical deposition technique. Using the cyclical deposition technique, the tungsten-based material is formed by alternately adsorbing a tungsten-containing precursor and a reducing gas on a structure.

Abstract: Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support.

Abstract: Embodiments of the present invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds, providing one or more cycles of a second set of compounds, and providing one or more cycles of a third set of compounds. One cycle of the first set of compounds includes introducing a titanium precursor and a reductant. One cycle of the second set of compounds includes introducing the titanium precursor and a silicon precursor. One cycle of the third set of compounds includes introducing the titanium precursor and a nitrogen precursor. Another embodiment includes depositing a titanium layer utilizing titanium halide. Then, a passivation layer is deposited over the titanium layer utilizing titanium halide. The passivation layer may comprise titanium silicide, titanium silicon nitride, and combinations thereof.

Abstract: A system is proposed for identifying orders in an order management system which are to proscribed individuals or organizations having Chinese addresses. The Chinese address items of the order management database, and the Chinese address items of a database of proscribed individuals and organizations, are each converted into respective databases in a common writing system, namely the Pin Yin transliteration standard. In the conversion process, Simplified Mandarin items in the order management database which can be converted in multiple ways are converted in each of those ways. The converted items from the two Pin Yin databases are then compared.