Abstract: A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.

Abstract: A method and apparatus of depositing a tungsten film by cyclical deposition in the formation of tungsten silicide for use in capacitor structures is provided. One embodiment of forming an electrode for a capacitor structure comprises depositing a polysilicon layer over a structure and depositing a tungsten layer over the polysilicon layer by cyclical deposition. The tungsten layer is annealed to form a tungsten silicide layer from the polysilicon layer and the tungsten layer. The tungsten silicide layer acts as one electrode in the capacitor structure. In one aspect, the tungsten silicide layer may be used to form three-dimensional capacitor structures, such as trench capacitors, crown capacitors, and other types of capacitors. In another aspect, the tungsten silicide layer may be used to form capacitor structures which comprise a hemi-spherical silicon grain layer or a rough polysilicon layer.

Abstract: A method for forming a metal interconnect on a substrate is provided. In one aspect, the method comprises depositing a refractory metal containing barrier layer having a thickness that exhibits a crystalline like structure and is sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound; depositing a seed layer on at least a portion of the barrier layer; and depositing a second metal layer on at least a portion of the seed layer.

Abstract: A lid assembly and a method for ALD is provided. In one aspect, the lid assembly includes a lid plate having an upper and lower surface, a manifold block disposed on the upper surface having one or more cooling channels formed therein, and one or more valves disposed on the manifold block. The lid assembly also includes a distribution plate disposed on the lower surface having a plurality of apertures and one or more openings formed there-through, and at least two isolated flow paths formed within the lid plate, manifold block, and distribution plate. A first flow path of the at least two isolated flow paths is in fluid communication with the one or more openings and a second flow path of the at least two isolated flow paths is in fluid communication with the plurality of apertures.

Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

Abstract: A method of forming thick titanium nitride films with low resistivity. Using a thermal chemical vapor deposition reaction between ammonia (NH3) and titanium tetrachloride (TiCl4), a titanium nitride film is formed at a temperature of less than about 600° C., and an NH3:TiCl4 ratio greater than about 5. The deposited TiN film is then treated in a hydrogen-containing plasma such as that generated from molecular hydrogen (H2). This results in a thick titanium nitride film with low resistivity and good step coverage. The deposition and plasma treatment steps may be repeated for additional cycles to form a thick, composite titanium nitride film of desired thickness, which is suitable for use in plug fill or capacitor structure applications.

Abstract: A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.

Abstract: A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.

Abstract: A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.

Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

Abstract: Provided herein is a method of depositing a low resistivity tungsten film onto a wafer comprising the steps of introducing a metalorganic tungsten-containing compound into a deposition chamber of a CVD apparatus; maintaining the deposition chamber at a pressure and the wafer at a temperature suitable for the high pressure chemical vapor deposition of the tungsten film onto the wafer; thermally decomposing the tungsten-containing compound in the deposition chamber; and vapor-depositing the tungsten film onto the wafer thereby forming a low-resistivity tungsten film. Specifically provided is a method of depositing a low-resistivity tungsten film by high pressure MOCVD using tungsten hexacarbonyl as the precursor. Also provided is a low-resistivity tungsten film.

Abstract: A method of forming a composite barrier layer structure for use in integrated circuits is disclosed. The composite barrier layer structure formed using both physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. The composite barrier layer structure comprises a CVD deposited layer formed on a PVD deposited layer. During the PVD process, the underlying surface of the substrate is treated, reducing the resistivity of the barrier layer structure formed thereon.

Abstract: A method of forming thick titanium nitride films with low resistivity. Using a thermal chemical vapor deposition reaction between ammonia (NH3) and titanium tetrachloride (TiCl4), a titanium nitride film is formed at a temperature of less than about 600° C., and an NH3:TiCl4 ratio greater than about 5. The deposited TiN film is then treated in a hydrogen-containing plasma such as that generated from molecular hydrogen (H2). This results in a thick titanium nitride film with low resistivity and good step coverage. The deposition and plasma treatment steps may be repeated for additional cycles to form a thick, composite titanium nitride film of desired thickness, which is suitable for use in plug fill or capacitor structure applications.

Abstract: A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.

Abstract: A semiconductor system includes a body defining a processing chamber, a holder disposed within the processing chamber to support the substrate, and a fluid injection assembly to facilitate sequential deposition of films. In one embodiment, the fluid injection assembly is coupled to the body and includes high-flow-velocity valves, a baffle plate, and a support. The support is connected between the valves and the baffle plate. In one embodiment the valves are coupled to the support through a W-seal to direct a flow of fluid into the processing chamber, with the flow of fluid having an original direction and a velocity associated therewith. The baffle plate is disposed in the flow path to disperse the flow of fluids in a plane extending transversely to the original direction. In this manner, the baffle plate varies the velocity of the flow of fluids.

Abstract: A lid for a semiconductor system, an exemplary embodiment of which includes a support having opposed first and second opposed surfaces. A valve is coupled to the first surface. A baffle plate is mounted to the second surface. The valve is coupled to the support to direct a flow of fluid along a path in original direction and at an injection velocity. The baffle plate is disposed in the path to disperse the flow of fluid in a plane extending transversely to the original direction. In one embodiment the valve is mounted to a W-seal that is in turn mounted to the first surface of the support.

Abstract: The present disclosure pertains to the discovery that TiN films having a thickness of greater than about 400 Å and, particularly greater than 1000 Å, and a resistivity of less than about 175 &mgr;&OHgr;cm, can be produced by a CVD technique in which a series of TiN layers are deposited to form a desired TiN film thickness. Each layer is deposited employing a CVD deposition/treatment step. During a treatment step, residual halogen (typically chlorine) was removed from the CVD deposited film. Specifically, a TiN film having a thickness of greater than about 400 Å was prepared by a multi deposition/treatment step process where individual TiN layers having a thickness of less than 400 Å were produced in series to provide a finished TiN layer having a combined desired thickness. Each individual TiN layer was CVD deposited and then treated by exposing the TiN surface to ammonia in an annealing step carried out in an ammonia ambient.

Abstract: A method of forming a tantalum-nitride layer (204) for integrated circuit fabrication is disclosed. Alternating or co-reacting pulses of a tantalum containing precursor and a nitrogen containing precursor are provided to a chamber (100) to form layers (305, 307) of tantalum and nitrogen. The nitrogen precursor may be a plasma gas source. The resultant tantalum-nitride layer (204) may be used, for example, as a barrier layer. As barrier layers may be used with metal interconnect structures (206), at least one plasma anneal on the tantalum-nitride layer may be performed to reduce its resistivity and to improve film property.

Abstract: A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.

Abstract: Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.