Abstract: A wireless audio system supports Bluetooth Low Energy (LE) Audio, and includes a first audio sink device and a second audio sink device. The first audio sink device establishes a first LE isochronous (ISO) link between the first audio sink device and an audio source device. The second audio sink device establishes a second LE ISO link between the second audio sink device and the audio source device. In addition, the first audio sink device sets up a first snoop link that snoops audio packets transmitted over the second LE ISO link, and the second audio sink device sets up a second snoop link that snoops audio packets transmitted over the first LE ISO link.

Abstract: A network connection module and a method for selecting a bridging point thereof are disclosed. The method for selecting the bridging point is used for an electronic device to select the bridging point in a network environment which has at least one node capable of connecting to the electronic device. The method includes the following steps: when the electronic device needs to connect, searching for at least one node; confirming whether the electronic device has a connection requirement or whether there is a specified node among the at least one node; if yes, identifying a suitable node from the at least one node based on the connection requirement or the specified node; and if a suitable node is found, randomly selecting a bridging point from the suitable node; and if not, randomly selecting a bridging point from the at least one node.

Abstract: An apparatus is provided. The apparatus includes an equipment support structure configured to support a semiconductor fabrication component. The apparatus includes a damper assembly configured to resist a lateral force induced by a seismic event to the equipment support structure. The damper assembly includes a gear rack coupled to the equipment support structure. The damper assembly includes a first flywheel assembly including a first mass damper flywheel and a first gear meshed with the gear rack and selectively engaged with the first mass damper flywheel.

Abstract: An electrode material, electrode, battery and method for forming the electrode material are provided. The electrode material includes an active particle and a cladding layer partially or completely covering the surface of the active particle. The cladding layer includes 5 to 70 parts by weight of a conductive additive and 30 to 95 parts by weight of a first polymer, wherein the total weight of the first polymer and the conductive additive is 100 parts by weight. The first polymer is a product of a compound having two acrylate groups and an ethylene-vinyl acetate copolymer via a polymerization. The compound having two acrylate groups has the structure as represented by Formula (I) wherein A1, R1 and R2 are disclosed in the specification.

Abstract: A circuit board structure and a manufacturing method thereof are provided. The circuit board structure includes a ceramic board, a thick circuit layer formed on the ceramic board, and a thin circuit layer that is formed on the ceramic board. The thick circuit layer has a thickness being greater than or equal to 200 ?m, and the thin circuit layer has a thickness being within a range from 1 ?m to 150 ?m. The thin circuit layer includes a sputtering layout segment connected to the ceramic board and an electroplating layer that is connected to the sputtering layout segment. The material of the electroplating layer is different from that of the sputtering layout segment.

Abstract: Methods and systems for improving fusion bonding are disclosed. Plasma treatment is performed on a substrate prior to the fusion bonding, which leaves residual charge on the substrate to be fusion bonded. The residual charge is usually dissipated through an electrically conductive silicone cushion on a loading pin. In the methods, the amount of residual voltage on a test silicon wafer is measured. If the residual voltage is too high, this indicates the usable lifetime of the silicone cushion has passed, and the electrically conductive silicone cushion is replaced. This ensures the continued dissipation of residual charge during use in production, improving the quality of fusion bonds between substrates.

Abstract: An active metal brazing substrate and a method for manufacturing the same are provided. The active metal brazing substrate includes a ceramic substrate layer, an active metal layer, and a conductive metal layer. The active metal layer is disposed between the ceramic substrate layer and the conductive metal layer. The active metal layer is formed from an active metal solder and an organic dispersion medium. The active metal solder includes silver, copper, and an active metal. Based on a total weight of the active metal solder being 100 wt %, an amount of the silver ranges from 10 wt % to 60 wt %. A tensile strength of the active metal brazing substrate ranges from 165 N/cm to 270 N/cm.

Abstract: A card edge connector includes: a housing having a mating slot for insertion of an electronic card; plural terminals retained in the housing; a latch mounted at a first longitudinal end of the housing; a movable key received in the housing; and a rod attached to the housing, wherein the latch and the movable key are connected with opposite ends of the rod, and the movable key is pushable downwards to push the rod to move in a longitudinal direction to bring the latch to a locked state.

Abstract: A card edge connector includes: a connector body having a card slot and plural terminals arranged on opposite sides of the card slot; a latch mounted at an end of connector body; and a releasing member including a pair of levers disposed at opposite sides of the connector body and a mover, wherein first ends of the levers are connected with the latch, second ends are connected with the mover, and when the card is inserted into the card slot the mover is pushed to move downwards companied with a downward movement of the second ends and an upward movement of the first ends of the levers, the upward movement of the first ends drive the latch to lock with the card and when the card is pulled out the mover is released from a pressure of the card and reset to unlock the latch from the electronic card.

Abstract: The present disclosure relates to exclusion rings for use in processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The exclusion ring includes an alignment structure that cooperates with an alignment structure on a platen on which the exclusion ring will rest during processing of the wafer. The first alignment structure includes a guiding surface which promotes the reception of and positioning of the second alignment structure within the first alignment structure. Methods of utilizing the described exclusion rings are also described.

Abstract: Described herein are a novel concept of thermally stimulated delayed phosphorescence (TSDP) to harvest light emission from the higher energy triplet excited state via the up-conversion from the lowest-energy triplet excited state by efficient spin-allowed reverse internal conversion as well as the development of TSDP emitters, as exemplified by a novel class of gold(III) compounds with TSDP properties and methods of making and using said compounds. The gold(III) compound includes a triazine-containing cyclometalating tridentate ligand and one auxiliary ligand, both coordinated to a gold(III) metal center. The gold(III) compounds disclosed herein can be used as light-emitting material for fabrication of OLEDs.

Abstract: A functional patch for use with a contact lens includes an attaching layer and a functional patterned layer. The contact lens and the attaching layer are made of different hydrophilic materials to present two net-like structures respectively contain a plurality of first pores and second pores, and the second pores have pore size smaller than that of the first pores. The attaching layer is adsorbable to and detachable from the contact lens. A part of the functional patterned layer permeates into the second pores and the remaining part of the functional patterned layer is cured on the surface of the attaching layer. The attaching layer has closely arranged molecular chain blocks to form net-like structure having relatively small pore size. Therefore, only a limited amount of the material molecules of the functional patterned layer is permeated into the second pores, allowing the functional patterned layer to have a smooth surface.

Abstract: Methods and systems for improving fusion bonding are disclosed. Plasma treatment is performed on a substrate prior to the fusion bonding, which leaves residual charge on the substrate to be fusion bonded. The residual charge is usually dissipated through an electrically conductive silicone cushion on a loading pin. In the methods, the amount of residual voltage on a test silicon wafer is measured. If the residual voltage is too high, this indicates the usable lifetime of the silicone cushion has passed, and the electrically conductive silicone cushion is replaced. This ensures the continued dissipation of residual charge during use in production, improving the quality of fusion bonds between substrates.

Abstract: A card edge connector includes: a connector base having a card slot and plural terminals; a latch located at one end of the connector base for locking a card; and a releasing member. The releasing member includes two levers and a moving member, the levers are connected with the connector base in a pivoting manner, a first end of the lever is connected with the latch and an opposite second end of the lever is coupled to the moving member, wherein when the card is inserted into the slot and presses against the moving member downwards, the moving member drives the second ends of the levers to move downward, resulting in the first ends moving upwards to push the latch to lock with the card, and when the card is pulled out the moving member resets and drives the levers to release the latch from the card.

Abstract: The invention relates to methods, non-transitory computer-readable storage medium, and apparatus for transmitting and receiving a wireless multi-source packet. A processing unit of a first audio-data transmitter device obtains data-slot assignments indicating that a first data slot is assigned to a second audio-data transmitter device and a second data slot is assigned to first audio-data transmitter device for data transmission from a audio-data receiver device; tunes in a first physical channel in the first data slot to obtain a first frame from the second audio-data transmitter device; obtains a second frame including a chunk of second audio data originated by the first audio-data transmitter device; encapsulates the first frame and the second frame into a payload of a media packet; and transmits the media packet at a second physical channel to the audio-data receiver device in the second data slot.

Abstract: A novel class of gold (III) compounds with thermally stimulated delayed phosphorescence (TSDP) properties, methods of making and use thereof are disclosed. The gold (III) compound includes a triazine-containing cyclometalating tridentate ligand and one auxiliary ligand, both coordinated to a gold (III) metal center. The gold (III) compounds can be used as light-emitting material for fabrication of OLEDs. A novel concept of TSDP to harvest light emission from the higher energy triplet excited state via the up-conversion from the lowest-energy triplet excited state by efficient spin-allowed reverse internal conversion is also disclosed.

Abstract: The invention relates to methods, non-transitory computer-readable storage medium, and apparatus for retransmitting wireless peer packets. A method for retransmitting wireless peer packets, which is performed by a processing unit of a first wireless slave device, includes: receiving a media packet that is originally sent by a wireless master device to a second wireless slave device in a peer-side time period; and transmitting the media packet in a medium in the peer-side time period when a retransmission mechanism is activated between the wireless master device and the second wireless slave device for retransmitting the media packet. The first wireless slave device and the second wireless slave device are mutually peer devices. The peer-side time period indicates a time period that is originally used by the second wireless slave device communicating with the wireless master device.

Abstract: An electrical connector includes: an insulating housing; one row of terminals including signal and grounding terminals, each terminal including a retaining portion, an elastic arm and a soldering portion, and an arc-shaped contacting portion extending from the elastic portion, the contacting portion having a contacting point, the soldering portion having a nearest soldering point; and a grounding member comprising plural first grounding portions arranged in one row and each extending slantwise downwards and plural second grounding portions arranged in one row and each extending slantwise upwards, the first grounding portions touch the grounding terminals at first touching points, the second grounding portions touch the grounding terminals at second touching points, the first touching point is located at a middle-length point between the contacting point and the nearest soldering point along an extending direction of the grounding terminal, and the second touching point is located near the first touching point

Abstract: An active metal brazing substrate material and a method for producing the same are provided. The active metal brazing substrate material includes a ceramic substrate layer, a first brazing layer, a second brazing layer, and a conductive metal layer that are sequentially stacked. The first brazing layer includes a first metal composite material, which includes silver (Ag), copper (Cu), and a first active metal element. Based on a total weight of the first metal composite material being 100 parts by weight, a silver content is not less than 50 parts by weight. The second brazing layer includes a second metal composite material. The second metal composite material includes a low melting point metal element (e.g., Sn), copper (Cu), and a second active metal element, but does not include silver. A melting point of the low melting metal element is between 130° C. and 350° C.

Abstract: An active metal brazing substrate material and a method for producing the same are provided. The active metal brazing substrate material includes a ceramic substrate layer, a first brazing layer, a second brazing layer, and a conductive metal layer that are sequentially stacked. The first brazing layer includes a first metal composite material, which includes silver (Ag), copper (Cu), and a first active metal element. Based on a total weight of the first metal composite material being 100 parts by weight, a silver content is not less than 50 parts by weight. The second brazing layer includes a second metal composite material, which includes aluminum (Al), copper (Cu), and a second active metal element, but does not contain silver. Based on a total weight of the second metal composite material being 100 parts by weight, an aluminum content is not less than 40 parts by weight.