Abstract: A wound capacitor package structure and a method of manufacturing the same are provided. The wound capacitor package structure includes a wound assembly, a conductive assembly, a package casing and a protruding sealing element. The conductive assembly includes a first conductive pin and a second conductive pin. The package casing is configured to receive the wound assembly. The protruding sealing element is arranged inside and cooperates with the package casing. The package casing is configured to receive the wound assembly. The protruding sealing element is disposed inside the package casing and cooperating with the package casing. The package casing has a surrounding concave position-limiting portion recessed inward, and a surrounding convex end portion protruding from the surrounding concave position-limiting portion.

Abstract: A variable aperture module includes a blade assembly, a positioning element, a driving part and pressing structures. The blade assembly includes movable blades disposed around an optical axis to form a light passable hole with an adjustable size. Each movable blade has a positioning hole and a movement hole adjacent thereto. The positioning element includes positioning structures disposed respectively corresponding to the positioning holes. The driving part includes a rotation element disposed corresponding to the movement holes and is rotatable with respect to the positioning element. The pressing structures are disposed respectively corresponding to the movable blades. Each pressing structure is at least disposed into at least one of the positioning hole and the movement hole of the corresponding movable blade. Each pressing structure at least presses against at least one of the corresponding one positioning structure and the rotation element.

Abstract: A method includes forming a dummy pattern over test region of a substrate; forming an interlayer dielectric (ILD) layer laterally surrounding the dummy pattern; removing the dummy pattern to form an opening; forming a dielectric layer in the opening; performing a first testing process on the dielectric layer; performing an annealing process to the dielectric layer; and performing a second testing process on the annealed dielectric layer.

Abstract: An imaging lens module includes a casing, an imaging lens disposed to the casing, a lens carrier supporting the image lens, an elastic element connected to the lens carrier to provide the lens carrier with a translational degree of freedom along an optical axis, a frame connected to the elastic element such that the lens carrier is movable along the optical axis with respect to the frame, a variable through hole module coupled to the imaging lens and having a light passable hole with a variable aperture size, and a wiring assembly including a fixed wiring part at least partially located closer to the opening than the elastic element and a movable wiring part electrically connected to the fixed wiring part and the variable through hole module. The optical axis passes through lens elements of the imaging lens and the center of the variable through hole module.

Abstract: A drill bit for cutting formation comprises a bit body, a plurality of cutters, and a plurality of blades with pockets to accommodate the cutters, respectively. Each of the plurality of cutters has a substrate, an ultra-hard layer, an inclined surface on the top of the ultra-hard layer, wherein the inclined surface slants downward from a cutting edge to a trailing edge. The cutter can improve cutting efficiency and service life.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.

Abstract: A semiconductor structure includes a dielectric layer over a substrate, a via conductor over the substrate and in the dielectric layer, and a first graphene layer disposed over the via conductor. In some embodiments, a top surface of the via conductor and a top surface of the dielectric layer are level. In some embodiments, the first graphene layer overlaps the via conductor from a top view. In some embodiments, the semiconductor structure further includes a second graphene layer under the via conductor and a third graphene layer between the dielectric layer and the via conductor. In some embodiments, the second graphene layer is between the substrate and the via conductor.

Abstract: Embodiments of the present disclosure provide a method for forming a semiconductor package. In one embodiment, the method includes providing a first integrated circuit die having a first circuit design on a substrate, providing a second integrated circuit die having a second circuit design on the substrate, wherein the first and second integrated circuit dies are separated from each other by a scribe line.

Abstract: Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a third dielectric layer over the second dielectric layer, a second contact feature extending through the second dielectric layer and the third dielectric layer, and a graphene layer between the second contact feature and the third dielectric layer.

Abstract: A ferroelectric memory device and a semiconductor die are provided. The ferroelectric memory device includes a gate electrode; a channel layer, overlapped with the gate electrode; source/drain contacts, in contact with separate ends of the channel layer; a ferroelectric layer, lying between the gate electrode and the channel layer; and a first insertion layer, extending in between the ferroelectric layer and the channel layer, and comprising a metal carbonitride or a metal nitride.

Abstract: The application relates to a polymerization vessel and a method for manufacturing the same. An interior surface of the polymerization vessel has a specific structure, so that the polymerization vessel has better heat transfer efficiency. Closed cooling channels are constructed from the specific structure, and therefore cooling fluid flows in the closed cooling channels. Furthermore, there won't be any by-pass defects in the cooling channels of the polymerization vessel, thereby improving cooling efficiency of the cooling fluid.

Abstract: An imaging lens assembly includes a first optical element and a low-reflection layer. The first optical element has a central opening, and includes a first surface, a second surface and a first outer diameter surface. The first outer diameter surface is connected to the first surface and the second surface. The low-reflection layer is located on at least one of the first surface and the second surface, and includes a carbon black layer, a nano-microstructure and a coating layer. The nano-microstructure is directly contacted with and connected to the carbon black layer, and the nano-microstructure is farther from the first optical element than the carbon black layer from the first optical element. The coating layer is directly contacted with and connected to the nano-microstructure, and the coating layer is farther from the first optical element than the nano-microstructure from the first optical element.

Abstract: An imaging lens assembly includes a first optical element and a low-reflection layer. The first optical element has a central opening, and includes a first surface, a second surface and a first outer diameter surface. The first outer diameter surface is connected to the first surface and the second surface. The low-reflection layer is located on at least one of the first surface and the second surface, and includes a carbon black layer, a nano-microstructure and a coating layer. The nano-microstructure is directly contacted with and connected to the carbon black layer, and the nano-microstructure is farther from the first optical element than the carbon black layer from the first optical element. The coating layer is directly contacted with and connected to the nano-microstructure, and the coating layer is farther from the first optical element than the nano-microstructure from the first optical element.

Abstract: An electronic system using a USB type-C port and an abnormal elimination method thereof are provided. After sending a hard reset request to a power adapter, a host device determines whether to enter an error recovery state according to whether an initialization signal is at a first preset level for a first preset time, so that the initialization signal is changed to a second preset level, or whether to force the initialization signal to change to the second preset level according to whether the initialization signal is at the first preset level for a second preset time.

Abstract: This disclosure provides a lens assembly that has an optical path and includes a lens element and a light-blocking membrane layer. The lens element has an optical portion, and the optical path passes through the optical portion. The light-blocking membrane layer is coated on the lens element and adjacent to the optical portion. The light-blocking membrane layer has a distal side and a proximal side that is located closer to the optical portion than the distal side. The proximal side includes two extension structures and a recessed structure. Each of the extension structures extends along a direction away from the distal side, and the extension structures are not overlapped with each other in a direction in parallel with the optical path. The recessed structure is connected to the extension structures and recessed along a direction towards the distal side.

Abstract: A method for manufacturing a semiconductor structure includes forming a first interconnect feature in a first dielectric feature, the first interconnect feature including a first conductive element exposed from the first dielectric feature; forming a first cap feature over the first conductive element, the first cap feature including a first cap element which includes a two-dimensional material; forming a second dielectric feature with a first opening that exposes the first cap element; forming a barrier layer over the second dielectric feature while exposing the first cap element from the barrier layer; removing a portion of the first cap element exposed from the barrier layer; and forming a second conductive element in the first opening.

Abstract: The embodiments of the present disclosure provide booster mechanisms suitable for a liquid container. The booster mechanism may include a liquid storage assembly. A tail end of the liquid storage assembly may be provided with a strike space. The strike space may be provided with a movable assembly. The movable assembly may be capable of performing an axial movement along the strike space. The tail end of the movable assembly may be provided with a booster assembly and a deformation space. A front end of the booster assembly may be provided with a deformation trigger assembly. A deformation gap may be between the deformation space and the deformation trigger assembly.

Abstract: An apparatus for estimating a fair value of a SPP includes a sunshine simulation system for generating a peak sun hour; a photovoltaic (PV) yield system for measuring a total power loss rate and generating an estimated energy-production-hours database; and a financial pricing system for generating a series of cash flows and discount factors. The financial pricing system computes a series of present values which are the product of the cash flows and the discount factors, and sums up all the present values to obtain an estimated value of the SPP. Since the apparatus for estimating SPP value takes the real power generation condition of the SPP and the real market economic condition into consideration, so that the apparatus can generate a pricing result even closer to the real market.