Abstract: A method for planarizing an integrated circuit. The integrated circuit is to be planarized to an upper surface using chemical mechanical polishing. The upper surface of the integrated circuit includes regions of a first material and regions of a second material. The first material has a first polishing rate and desired chemical, physical, and electrical properties. The second material has a second polishing rate and desired chemical, physical, and electrical properties. The first polishing rate is greater than the second polishing rate. The regions of the first material adjoin the regions of the second material at interfaces. The upper surface of the integrated circuit is overlaid with a top layer of the second material, that is to be removed by the chemical mechanical polishing. Both the regions of the second material and the top layer of the second material are deposited during a deposition.

Abstract: A wafer mounting plate for mounting a wafer in a chemical mechanical polishing process and a method for using the wafer mounting plate are disclosed. The novel mounting plate for a silicon wafer is designed to incorporate a concave mounting surface for contacting a wafer with a flexible membrane layer thereinbetween. The wafer mounting plate is further provided with a plurality of apertures therethrough for use as vacuum passageways for picking up a wafer through a perforated or breathable membrane layer. The concave surface of the wafer mounting plate that contacts the wafer substantially eliminates stress concentration problems imposed on the wafer by conventional wafer mounting plates. The present invention novel apparatus therefore not only eliminates the edge defect problem that is normally associated with the conventional mounting plates, but further solves the wafer breakage problem frequently caused by stress concentration imposed on the wafer by a bumper ring.

Abstract: Gaseous reactants capable of depositing a thin film on a semiconductor substrate are introduced into a deposition zone of a deposition apparatus through a gaseous reactants dispersion apparatus having rounded corners and smoothed anodized surfaces and maintained at a temperature ranging from about 70.degree. C. to about 85.degree. C., and preferably from about 75.degree. C. to about 80.degree. C., to inhibit the deposition and accumulation on such surfaces of charged materials capable of generating particles which may cause damage to the semiconductor substrate.

Abstract: A process for forming improved metal silicide contacts over the gate electrode and source/drain regions of MOS devices of an integrated circuit structure formed in a silicon substrate is described. The metal silicide contacts are formed by first forming a silicon oxide layer over exposed portions of the silicon substrate and over exposed surfaces of previously formed polysilicon gate electrodes. Silicon nitride sidewall spacers are then formed over the oxide on the sidewalls of the gate electrode by depositing a silicon nitride layer over the entire structure and then anisotropically etching the silicon nitride layer. Source/drain regions are then formed in the silicon substrate adjacent the nitride spacers and the structure is then contacted with an oxide etch to remove oxide from the upper surface of the gate electrode and the substrate surface over the source/drain regions.