Abstract: A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.

Abstract: According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0<x<0.35) is provided. The crystal-growing method includes a step of epitaxially growing the II-VI single crystalline semiconductor on a substrate by: supplying a II element Zn onto the substrate by using a molecular beam from a ZnSe compound source and a molecular beam from a Zn elemental source; supplying a II element Cd onto the substrate by using a molecular beam from a CdSe compound source; and supplying a VI element Se onto the substrate by using a molecular beam from a ZnSe compound source.

Abstract: A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x<1, 0.ltoreq.y<1) and a quantum well layer made of Zn.sub.1-z Cd.sub.z Se (0.ltoreq.z<1) which is interposed between the first and the second light guiding layers, the light-emitting layer being interposed between the first and the second cladding layers; and a burying layer which is made of ZnMgSSe lattice-matching with the semiconductor substrate and formed on sides of the second cladding layer.

Abstract: A method for epitaxially growing a II-VI compound semiconductor according to this invention comprises the steps of epitaxially growing a GaAs.sub.x Se.sub.1-x layer on a GaAs substrate and epitaxially growing a ZnSe layer or a compound semiconductor layer including ZnSe on the GaAs.sub.x Se.sub.1-x layer. This method provides a II-VI compound semiconductor in which a strain caused by a lattice mismatch is prevented and the hetero interface is excellent.

Abstract: The present invention provides a p-n junction type blue luminescence device forming a p-type hole injection layer and having high light-emission efficiency. On an n-conduction type ZnS substrate 111, there is formed a multiquantum well structure 112 alternately laminating a p-type ZnTe layer 112a and a non-doped ZnS layer 112b. And, a positive electrode 113 and a negative electrode 114 are provided on the multiquantum well structure 112 and the ZnS crystal, respectively. By applying forward bias voltage on this light-emitting device, electrons are injected from the n-type ZnS substrate to the multiquantum well structure 112. Then, these electrons are recombined with holes in the multiquantum well structure 112, so as to emit blue luminescence light. Thus, it becomes possible to easily and reproducibly obtain a p-conduction type hole injection layer so as to realize highly concentrated carrier injection and obtain high efficiency in emitting blue luminescence light.

Abstract: Flatness of atomic-accuracy is achieved in an MBE epitaxial growth process by imparting kinetic energy to atoms absorbed on a substrate by means of irradiation by ion-beam for surface bombardment. Ion-beam surface bombardment may also be used for evaluation. The molecular-beam for epitaxial growth and the ion bombardment for surface energization and surface evaluation may all be operated in a pulse mode and synchronized so that evaluation and growth are conducted alternately while growth and energization are conducted simultaneously.

Abstract: Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.

Abstract: Disclosed is a liquid phase epitaxial growth method using a slider having a recess which receives a semiconductor substrate, and a growth boat having a solution holder which holds plural kinds of solutions for use in epitaxial growth, in which method, epitaxial growth of a layer having thickness of less than 500 .ANG. is carried out under the condition that the slider is sliding in one direction, i.e., without stopping the sliding movement of the slider. Thereby, the thickness of the growth layer is controlled by controlling the time when the substrate contacts the solution, or by the sliding speed of the slider.