Abstract: A light modulation device having a pixel arrangement region in which a plurality of pixels are arranged includes a first substrate, a second substrate disposed to be opposed to the first substrate via a liquid crystal layer, and a cooling member disposed on the opposite side of the first substrate with respect to the second substrate and thermally connected to the second substrate. The cooling member includes a hollow space in which working fluid is encapsulated and changes the working fluid in a liquid phase to the working fluid in a gas phase to cool the liquid crystal layer via the second substrate.

Abstract: A light modulation device having a pixel arrangement region in which a plurality of pixels are arranged includes a first substrate, a second substrate disposed to be opposed to the first substrate via a liquid crystal layer, and a cooling member disposed on the opposite side of the first substrate with respect to the second substrate and thermally connected to the second substrate. The cooling member includes a hollow space in which working fluid is encapsulated and changes the working fluid in a liquid phase to the working fluid in a gas phase to cool the liquid crystal layer via the second substrate.

Abstract: A light modulation device having a pixel arrangement region in which a plurality of pixels are arranged includes a first substrate, a second substrate disposed to be opposed to the first substrate via a liquid crystal layer, and a cooling member disposed on the opposite side of the first substrate with respect to the second substrate and thermally connected to the second substrate. The cooling member includes a hollow space in which working fluid is encapsulated and changes the working fluid in a liquid phase to the working fluid in a gas phase to cool the liquid crystal layer via the second substrate.

Abstract: A liquid crystal panel of an electro-optical device includes a first quartz substrate, a second quartz substrate facing the first quartz substrate, a liquid crystal layer interposed between the first quartz substrate and the second substrate, a first sapphire substrate bonded to the first quartz substrate, and a second sapphire substrate bonded to the second quartz substrate. Each thickness of the first sapphire substrate and the second sapphire substrate is at least two times a thickness of the first quartz substrate or the second quartz substrate.

Abstract: An electro-optical device includes a substrate, a transistor over the substrate, a pixel electrode over the transistor, a source line between the transistor and the pixel electrode, a fixed potential line over the substrate, a first capacitive element comprising a first electrode electrically connected to the fixed potential line, a first capacitance film, and a second electrode, a second capacitive element comprising the second electrode, a second capacitance film, and a third electrode electrically connected to the fixed potential line, a third capacitive element comprising the fixed potential line, a third capacitance film, and a fourth electrode. The first capacitive element and the second capacitive element are provided between the transistor and the source line, and the third capacitive element is provided between the source line and the pixel electrode.

Abstract: An electro-optical device is capable of high quality images. An electro-optical device (200) includes a first capacitive element (491), a second capacitive element (492), and a third capacitive element (493). The first capacitive element (491) includes a first conductive film (408), a first part of a second conductive film (411), and a first dielectric film (410). The second capacitive element (492) includes a third conductive film (416), a second part of a fourth conductive film (418), and a second dielectric film (417). The third capacitive element (493) includes the third conductive film (416), a third part of the fourth conductive film (418), and the second dielectric film (417). Since a capacitive element that includes a large capacitance value is formed in a narrow region, even if the pixel becomes smaller as the definition is increased, it is possible to realize an excellent electro-optical device in which display defects are suppressed.

Abstract: An electro-optical device is capable of high quality images. An electro-optical device (200) includes a first capacitive element (491), a second capacitive element (492), and a third capacitive element (493). The first capacitive element (491) includes a first conductive film (408), a first part of a second conductive film (411), and a first dielectric film (410). The second capacitive element (492) includes a third conductive film (416), a second part of a fourth conductive film (418), and a second dielectric film (417). The third capacitive element (493) includes the third conductive film (416), a third part of the fourth conductive film (418), and the second dielectric film (417). Since a capacitive element that includes a large capacitance value is formed in a narrow region, even if the pixel becomes smaller as the definition is increased, it is possible to realize an excellent electro-optical device in which display defects are suppressed.

Abstract: A color filter substrate includes a color filter layer, a light-transmissive layer and a light-shielding layer. The light-transmissive layer is disposed between pixels and includes a side surface that forms a reflection surface. The light-shielding layer is laminated on the light-transmissive layer.

Abstract: An electro-optical device includes a substrate, a transistor over the substrate, a pixel electrode over the transistor, a source line between the transistor and the pixel electrode, a fixed potential line over the substrate, a first capacitive element comprising a first electrode electrically connected to the fixed potential line, a first capacitance film, and a second electrode, a second capacitive element comprising the second electrode, a second capacitance film, and a third electrode electrically connected to the fixed potential line, a third capacitive element comprising the fixed potential line, a third capacitance film, and a fourth electrode. The first capacitive element and the second capacitive element are provided between the transistor and the source line, and the third capacitive element is provided between the source line and the pixel electrode.

Abstract: In an element substrate of an electro-optical device, MOS transistors (electrostatic protection element) are provided on an opposite side to a light transmitting substrate with respect to the insulating film, and heat dissipation layers that overlap drain regions of the MOS transistor in a plan view are provided between the light transmitting substrate and the insulating film. In addition, the heat dissipation layers are connected to the drain regions through contact holes which are formed in the insulating film.

Abstract: In at least one embodiment of the disclosure, an electro-optical device comprises a pixel electrode and a transistor corresponding to the pixel electrode. A data line is electrically connected to the transistor. A storage capacitor is provided between the pixel electrode and the transistor. The storage capacitor has a first capacitance electrode and a second capacitance electrode facing each other. A capacitance isolation film is interposed therebetween. An additional capacitor is electrically connected to the data line. The additional capacitor has a first additional capacitance electrode and a second additional capacitance electrode facing each other. An additional capacitance isolation film is interposed therebetween. The first additional capacitance electrode is provided on a same layer as the first capacitance electrode. The second additional capacitance electrode is provided on a layer different from the layers of the first and second capacitance electrodes.

Abstract: An electro-optical device, including: a substrate; a pixel electrode; a pixel switching element which is disposed between the substrate and the pixel electrode; a first light shielding film which is disposed between the pixel switching element and the pixel electrode, and extends in one direction among the first direction and the second direction; and a second light shielding film which is disposed between the pixel switching element and the pixel electrode, and extends in the other direction among the first direction and the second direction. A pixel opening portion is defined by an outer edge of the first light shielding film and an outer edge of the second light shielding film.

Abstract: In an element substrate of an electro-optical device, MOS transistors (electrostatic protection element) are provided on an opposite side to a light transmitting substrate with respect to the insulating film, and heat dissipation layers that overlap drain regions of the MOS transistor in a plan view are provided between the light transmitting substrate and the insulating film. In addition, the heat dissipation layers are connected to the drain regions through contact holes which are formed in the insulating film.

Abstract: A retention capacity in which a first electrode, a lower side capacity insulation film, a second electrode, an upper side capacity insulation film, and a third electrode are laminated is formed between a pixel electrode and a TFT. The lower side capacity insulation film and the upper side capacity insulation film respectively include a plurality of insulation films, and the lamination order thereof is the same.

Abstract: According to one embodiment, A terminal is configured to connect a cable from a chargeable external apparatus. A power supply module is configured to supply electric power to the external apparatus via the terminal. A detector is configured to detect a power supply status by the power supply module. A determination module configured to determine charging completion of the external apparatus based on the power supply status. An output module configured to output the charging completion based on the charging completion determination result.

Abstract: An electro-optical device includes a pixel electrode provided on a substrate, a transistor provided between the substrate and the pixel electrode, a first capacitor electrode provided between the pixel electrode and the transistor, and be electrically connected to the pixel electrode and the transistor, a second capacitor electrode provided between the pixel electrode and the first capacitor electrode, be located so as to be opposite the first capacitor electrode via a capacitor insulating film, and be supplied with a predetermined electric potential, and a light-shielding film provided between the pixel electrode and the second capacitor electrode, be located so as to be at least partially overlapped by the transistor, and be electrically connected to the second capacitor electrode via a contact hole formed in an insulating film disposed between the second capacitor electrode and the light-shielding film.

Abstract: An electro-optical device includes: a pixel electrode provided on a substrate; a transistor being provided between the substrate and the pixel electrodes; and a holding capacitor, provided between the pixel electrode and the transistor, configured of a first electrode, a second electrode provided opposing the first electrode via a first capacitor insulation film, and a third electrode provided opposing the first electrode via a second capacitor insulation film. Both the first capacitor insulation film and the second capacitor insulation film have multiple layers; the first capacitor insulation film and the second electrode are formed symmetrical to the second capacitor insulation film and the third electrode when viewed from the first electrode.

Abstract: A retention capacity in which a first electrode, a lower side capacity insulation film, a second electrode, an upper side capacity insulation film, and a third electrode are laminated is formed between a pixel electrode and a TFT. The lower side capacity insulation film and the upper side capacity insulation film respectively include a plurality of insulation films, and the lamination order thereof is the same.

Abstract: A color filter substrate includes a color filter layer, a light-transmissive layer and a light-shielding layer. The light-transmissive layer is disposed between pixels and includes a side surface that forms a reflection surface. The light-shielding layer is laminated on the light-transmissive layer.

Abstract: An electro-optical device substrate includes a substrate, a plurality of data lines and a plurality of scanning lines crossing each other on the substrate, and a plurality of pixels defined by the plurality of data lines and the plurality of scanning lines so as to correspond to intersections thereof. Each pixel includes a pixel electrode, a conducting layer formed in a non-opening region separating an opening region of the pixel from that of another pixel, the conducting layer having a protruding portion protruding into the opening region from a part of one of a plurality of region edges defining the opening region, and a first contact portion electrically connecting the pixel electrode and the protruding portion.