Abstract: An electro-optic device includes data lines and scanning lines extending to cross each other on a substrate, pixel electrodes disposed on the substrate for respective pixels defined corresponding to the data lines and the scanning lines in a plan view of the substrate, thin film transistors electrically connected to the respective pixel electrodes, and at least one amorphous wiring including an amorphous film and disposed in a region containing a region opposite to a channel region of each of the thin film transistors in a plan view of the substrate and in a layer different from that of semiconductor films of the thin film transistors.

Abstract: Exemplary embodiments provide a method of manufacturing a substrate for an electro-optical device. The method includes sequentially depositing on the substrate a lower conductive layer which is a lower electrode of the capacitor, an intermediate layer which is a dielectric film of the capacitor, and an upper conductive layer which is an upper electrode of the capacitor, in which the lower conductive layer is made of a material having an etching rate lower than an etching rate of a material of the upper conductive layer with respect to a predetermined etching agent; forming a mask having a predetermined planar pattern on the upper conductive layer; patterning the upper conductive layer, the intermediate layer and the lower conductive layer by etching with the mask, in which the etching agent is applied to at least the upper conductive layer and the lower conductive layer; and removing the mask. Accordingly, it is possible to simply manufacture a high reliable capacitor on the substrate.

Abstract: An electro-optical device includes: an electro-optical device substrate; step portions having a concave shape that are formed on a predetermined insulating film of the electro-optical device substrate; side wall portions each of which is formed on a side surface of the concave step portion between the surface of the insulating layer and the bottom of the step portion and has an upward convex curved surface, the surface of the curved surface being continuously formed with the surface of the insulating film at the top of the concave step portion; and capacitive elements each of which is formed on the step portion and the side wall portion and has a lower electrode layer, an upper electrode layer, and a dielectric layer interposed between the lower electrode layer and the upper electrode layer.

Abstract: A method of manufacturing an electro-optical device, which, on a substrate, has a plurality of data lines, a plurality of scanning lines, a plurality of driving elements formed to correspond to intersections of the plurality of data lines and the plurality of scanning lines for pixels, and a plurality of pixel electrodes provided to correspond to the driving elements, includes forming an etching stopping layer, forming a common line that is provided above the etching stopping layer to short-circuit the plurality of scanning lines and the plurality of scanning lines, forming a first interlayer insulating film that isolates the plurality of data lines and the plurality of pixel electrodes from the plurality of scanning lines and the plurality of driving elements, forming contact holes that electrically connect the plurality of data lines and the plurality of pixel electrodes to the plurality of driving elements, forming the plurality of data lines, and forming a cutting hole in the first interlayer insulating f

Abstract: An apparatus includes a first direct memory access controller which successively processes first descriptors, thereby executing a series of data transfers for reading first data, which is stored in a memory, and generates an activation signal in a case where a current to-be-processed first descriptor of the first descriptors includes control information which instructs start of another data transfer, a second direct memory access controller which executes, each time the activation signal is received, a current to-be-processed second descriptor of second descriptors, thereby executing one of a series of data transfers for reading second data, which is stored in the memory, and an output signal generation unit that mixes the first data which is read by the first direct memory access controller and the second data which is read by the second direct memory access controller, thereby generating an output signal including the first data and the second data.

Abstract: A substrate for a semiconductor device includes a substrate, a thin film transistor that is provided on the substrate, a wiring line that is provided above the thin film transistor, an interlayer insulating film that electrically isolates the wiring line from at least a semiconductor layer of the thin film transistor, and a contact hole that has a first hole being cut in the interlayer insulating film and extending in a longitudinal direction in plan view on a substrate surface and a plurality of second holes passing through the interlayer insulating film from a bottom of the first hole to reach a surface of the semiconductor layer and being arranged in the longitudinal direction of the first hole. The connect hole connects the wiring line to the semiconductor layer via the interlayer insulating film.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of conductive layers above a substrate; forming a plurality of interlayer insulating layers, respectively, such that among the plurality of conductive layers, a lower conductive layer formed at a relatively lower layer above the substrate and an upper conductive layer formed at a relatively upper layer are insulated; for a lower interlayer insulating layer formed at a relatively lower layer and an upper interlayer insulating layer formed at a relatively upper layer among the plurality of interlayer insulating layers, forming with dry etching a first hole penetrating the upper interlayer insulating layer to reach the lower interlayer insulating layer, and at least a part of a sidewall located at an interface between the upper interlayer insulating layer and the lower interlayer insulating layer; forming a protective film that covers at least the portion located at the interface of the sidewall; forming by etching a second hole penetr

Abstract: To provide an electro-optical device, which has a high manufacturing yield and high quality display, the electro-optical device includes above a substrate, display electrodes, at least one of wiring lines and electronic elements that drive the display electrodes, and interlayer insulating films provided below the display electrodes to electrically insulate the display electrodes and at least one of the wiring lines and electronic elements from each other. At least one of the interlayer insulating films includes a boron phosphorus silicate glass film and has its top face subjected to planarizing treatment by being put into a fluidized state.

Abstract: Exemplary embodiments provide a method of manufacturing a substrate for an electro-optical device. The method includes sequentially depositing on the substrate a lower conductive layer which is a lower electrode of the capacitor, an intermediate layer which is a dielectric film of the capacitor, and an upper conductive layer which is an upper electrode of the capacitor, in which the lower conductive layer is made of a material having an etching rate lower than an etching rate of a material of the upper conductive layer with respect to a predetermined etching agent; forming a mask having a predetermined planar pattern on the upper conductive layer; patterning the upper conductive layer, the intermediate layer and the lower conductive layer by etching with the mask, in which the etching agent is applied to at least the upper conductive layer and the lower conductive layer; and removing the mask. Accordingly, it is possible to simply manufacture a high reliable capacitor on the substrate.

Abstract: Thienylazole compounds (I) and thienotriazolodiazepine compounds (II) of the formulas ##STR1## wherein R.sup.1 and R.sup.2 are hydrogen, halogen, C.sub.1 -C.sub.5 alkyl and the like; --A.dbd.B-- is --N.dbd.N-- and the like; R.sup.3 and R.sup.19 are hydrogen, C.sub.1 -C.sub.5 alkyl and the like; Y is --NHCO--, --NHCONH--, --NHCOO-- and the like; Z.sup.1 and Z.sup.2 are aryl, heteroaryl and the like; Ar is halogen-substituted phenyl and the like; and m is 0 or an integer of 1-5.The compounds of the present invention have CCK antagonistic action and gastrin antagonistic action, particularly potent antagonistic action against CCK-A receptor, and are useful as agents for the prophylaxis and treatment of central and peripheral nervous system diseases (e.g., anxiety, schizophrenia, and the like) and digestive diseases (e.g., pancreatitis, gastric ulcer, enterelcosis, irritable bowel syndrome, constipation, and the like).

Abstract: A therapeutic agent for osteoporosis, comprising an azepine compound of the formula ##STR1## wherein each symbol is as defined in the specification, or a pharmaceutically acceptable salt thereof as an active ingredient, a method for treating osteoporosis comprising administering said compound and a use of said compound for the production of a therapeutic agent for osteoporosis. The compounds of the formula (I) have superior bone resorption-inhibitory activity and act to reduce the increased amount of calcium in blood serum, which is caused by bone resorption.

Abstract: N-(4-(4-chlorophenyl)-2,3,9-trimethyl-6H-thieno ?3,2-f!?1,2,4!triazolo?4,3-a!?1,4!diazepin-6-yl )-N'- (2-methoxyphenyl)urea, optical isomers thereof and pharmaceutically acceptable salts thereof. The compounds of the present invention strongly and selectively inhibit the expression of VCAM-1 and have an inhibitory effect on leukocyte adhesion to vascular endothelial cells. Accordingly, the compounds of the present invention can be used as cell adhesion inhibitors for prophylaxis or treatment of various diseases in which cell adhesion is involved in the onset and progress thereof.

Abstract: An immunosuppressive drug, an autoimmune disease treating drug, an immunosuppression enhancing drug and a cell adhesion inhibitor, each containing a thienotriazolodiazepine compound wherein the 2-position of its diazepine ring is alkylated as an active ingredient, an immunosuppression method, an autoimmune disease treating method, an immunosuppression enhancing method and a cell adhesion inhibiting method, each of which comprising administering the compound, and uses of the compound for the production of an immunosuppressive drug, an autoimmune disease treating drug, an immunosuppression enhancing drug and a cell adhesion inhibitor.

Abstract: A therapeutic agent for osteoporosis, comprising an azepine compound of the formula ##STR1## wherein each symbol is as defined in the specification, or a pharmaceutically acceptable salt thereof as an active ingredient, a method for treating osteoporosis comprising administering said compound and a use of said compound for the production of a therapeutic agent for osteoporosis. The compounds of the formula (I) have superior bone resorption-inhibitory activity and act to reduce the increased amount of calcium in blood serum, which is caused by bone resorption.

Abstract: Stable crystals of an acid addition salt of an optically active thienotriazolodiazepine compound or its hydrate of the formula ##STR1## wherein R.sup.1 is hydrogen, R.sup.2 is 2-phenylethyl substituted by alkyl having 1 to 5 carbon atoms, 2-morpholinocarbonylethyl or alkyl having 6 to 12 carbon atoms, or R.sup.1 and R.sup.2 may combinedly form a saturated 5-membered ring having one substituent selected from the group consisting of morpholinomethyl, morpholinocarbonyl and N,N-dipropylcarbamoyl, R.sup.3 is halogen, alkyl having 1 to 5 carbon atoms or alkoxy having 1 to 5 carbon atoms, R.sup.4 is trifluoromethyl or alkyl having 1 to 5 carbon atoms, R.sup.5 is hydrogen or methyl, m is 1-2, and n is 0-2.

Abstract: There are provided novel ester-substituted thienotriazolodiazepines useful for the treatment of various PAF-induced diseases.

Abstract: A thienotriazolodiazepine compound of the formula: ##STR1## wherein Ar is phenyl, pyridyl, substituted phenyl or substituted pyridyl; R.sup.1 and R.sup.3 are the same or different and each is hydrogen, alkyl having 1 to 4 carbon atoms; R.sup.2 is hydrogen, alkyl having 1 to 4 carbon atoms or trifluoromethyl; R.sup.4 is straight or branched chain alkyl, alkenyl or alkynyl having 6 to 18 carbon atoms, or a thienodiazepine compound of the formula: ##STR2## wherein Ar, R.sup.1, R.sup.2 and R.sup.4 are as defined above, and pharmaceutically acceptable acid addition salt thereof.These compounds are useful as drugs for the treatment of circulatory diseases and various PAF-induced diseases. The compound (II) is also useful as an intermediate for preparing the compound (I).

Abstract: A thienotriazolodiazepine compound of the formula: ##STR1## wherein each symbol is as defined in the specification or a pharmaceutically acceptable salt thereof, and pharmaceutical uses thereof.Said compounds exhibit PAF-antagonistic activity and are useful for the prevention or treatment of various PAF-induced diseases.

Abstract: A thienotriazolodiazepine compound of the formula: ##STR1## wherein each symbol is as defined in the spedification, or a pharmaceutically acceptable acid addition salt thereof, and pharmaceutically uses thereof.Said compounds exhibit PAF-antagonistic acitivty and are useful for the prevention or treatment of various PAF-induced diseases.

Abstract: A thienotriazolodiazepine compound of the formula: ##STR1## wherein A is alkylene or substituted alkylene and each other symbol is as defined in the specification and a pharmaceutically acceptable acid addition salt thereof, and pharmaceutical uses thereof.Said compounds exhibit PAF-antagonistic activity and are useful for the prevention or treatment of various PAF-induced diseases.