Abstract: A semiconductor device includes: first and second power supply wirings VDDQ and VSSQ, respectively; an output circuit 12 arranged between VDDQ and VSSQ; and a noise cancellation circuit 13 arranged between VDDQ and VSSQ. The noise cancellation circuit 13 produces a damped oscillation for the SSN oscillation noise that is generated when a logic level outputted to an output node of the output circuit is switched and that exponentially damps and oscillates at a predetermined period. The damped oscillation produced by the noise cancellation circuit 13 is delayed by half a period of the SSN oscillation noise and has a direction opposite to that of the SSN oscillation noise and hence the damped oscillation and the SSN oscillation noise counteract each other.

Abstract: In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.

Abstract: A BGA semiconductor device includes a semiconductor package and a mounting board mounting thereon the semiconductor package, wherein an array of signal electrodes of the semiconductor package and an array of signal electrodes of the mounting board are coupled together via signal bumps. The BGA semiconductor device also includes a dummy bump, which reinforces the bending strength of the BGA semiconductor device and is broken by a shearing force caused by thermal expansion to alleviate the stress for the signal bumps.

Abstract: A semiconductor device includes a wiring board, a stack of semiconductor chips, and a first sealing member. The wiring board has a first surface. The wiring board includes a first insulating layer formed over the first surface. The first insulating layer has a first opening. The stack of semiconductor chips is mounted over the first surface of the wiring board. The stack of semiconductor chips includes a first semiconductor chip. The first semiconductor chip is closer to the wiring board than the other semiconductor chips. The first sealing member seals at least the first semiconductor chip. The first sealing member includes a protruding portion. The first opening of the insulating layer faces toward the protruding portion of the first sealing member.

Abstract: A semiconductor package includes a semiconductor device including a plurality of signal pads and a plurality of auxiliary pads which are alternatively arranged in a predetermined direction, and a package board including a plurality of signal bond fingers, a plurality of first power supply voltage bond fingers, and a plurality of second power supply voltage bond fingers. The signal pads are connected respectively to the signal bond fingers by first wires. The first power supply voltage bond fingers and the second power supply voltage bond fingers are connected respectively to the auxiliary pads by second wires. The first wires are disposed between those of the second wires which are connected to the first power supply voltage bond fingers and those of the second wires which are connected to the second power supply voltage bond fingers.

Abstract: A BGA semiconductor device includes a semiconductor package and a mounting board mounting thereon the semiconductor package, wherein an array of signal electrodes of the semiconductor package and an array of signal electrodes of the mounting board are coupled together via signal bumps. The BGA semiconductor device also includes a dummy bump, which reinforces the bending strength of the BGA semiconductor device and is broken by a shearing force caused by thermal expansion to alleviate the stress for the signal bumps.

Abstract: A device includes a substrate, a semiconductor chip, first and second pads, and a first wiring layer. The substrate includes first and second surfaces. The semiconductor chip includes third and fourth surfaces. The third surface faces toward the first surface. The first and second pads are provided on the third surface. The first and second pads are connected to each other. The first wiring layer is provided on the second surface of the substrate. The first wiring layer is connected to the first pad.

Abstract: A semiconductor device includes a substrate having bumps on the backside thereof, a first semiconductor chip mounted on the surface of the substrate, a second semiconductor chip mounted on the first semiconductor chip above the surface of the substrate, a first bonding wire having a length L1 for connecting the first semiconductor chip to the substrate, a second bonding wire having a length L2 (where L2>L1) for connecting the second semiconductor chip to the substrate, a first resin seal having a dielectric constant ?1 for sealing the first bonding wire, and a second resin seal having a dielectric constant ?2 (where ?2<?1) for sealing the second bonding wire. The relationship between the lengths L1 and L2 and the dielectric constants ?1 and ?2 is defined by an equation of ?1=?2(L2/L1)2.

Abstract: An interposer to be mounted with an integrated circuit to be a test object is provided with a switch and a probe to detect an electric current corresponding to individual terminals of the integrated circuit. A test pattern signal is then inputted to the integrated circuit through a test substrate as a switch that is connected to a power supply terminal of the integrated circuit and that is turned off. If the integrated circuit normally operates and the current values of all the terminals of the integrated circuit are within a tolerance, the power supply terminal connected to the turned-off switch is identified as a terminal that may be removed.

Abstract: A semiconductor device may include: first and second wiring boards separated from each other via a gap; a semiconductor chip; first and second groups of electrode pads; and first and second groups of connection pads. The semiconductor chip is fixed to upper surfaces of the first and second wiring boards, and has a first portion adjacent to the gap. The first and second groups of electrode pads are disposed on the first portion. The first and second groups of electrode pads are aligned adjacent to side surfaces of the first and second wiring boards, respectively. The side surfaces of the first and second wiring boards face each other. The first and second groups of connection pads are disposed on lower surfaces of the first and second wiring boards, respectively. The first and second groups of connection pads are aligned adjacent to the side surfaces of the first and second wiring boards, respectively.

Abstract: A semiconductor chip is mounted on a flexible wiring board through the interposition of an elastomer. The flexible wiring board is made up of a tape on which wiring is fixed. A part of the wiring is projected beyond the edge of the tape, extended in the direction of the thickness of the elastomer and connected to an electrode of the semiconductor chip. The edge of the tape beyond which the wiring is projected protrudes beyond the edge of the elastomer by a length no smaller than the thickness of the elastomer.

Abstract: A semiconductor device has a semiconductor chip which is usable as any one of 4-bit, 8-bit, and 16-bit structure devices, and a package for packaging the semiconductor chip. The semiconductor chip has first and second DQ pad groups of DQ system pads for said 16-bit structure device. The first DQ pad group is arranged in a first area at a vicinity of a middle part of a surface of the semiconductor chip while the second DQ pad group is arranged in a second area at an outer side of the first area on the surface. An additional pad necessary as one of DQ system pads for the 8-bit structure device except for pads included in the second DQ pad group is formed in the second area.

Abstract: A semiconductor device is mounted on a package substrate which has a power supply line and a signal line formed of a normal or predetermined resistance material layer on a dielectric layer. A resistance material layer has a high resistance as compared with the normal resistance material layer and is additionally provided on the surface of the normal resistance material layer of the peripheral face of the signal line closest to the power supply line.

Abstract: A semiconductor device includes a semiconductor chip and a package substrate on which the semiconductor chip is mounted. The package substrate has internal terminals connected to the semiconductor chip, front surface wirings connected to the internal terminals, rear surface wirings connected to external electrodes, and contacts connecting the front surface wiring and rear surface wiring. Out of the plurality of contact, some contacts included in the wirings for signal transmission are disposed near the internal terminals. Thus, a signal led out from the semiconductor chip is immediately taken away from the chip mounting surface of the package substrate. This reduces the floating capacitance between the wirings on the package substrate and chip, thereby improving the signal quality.

Abstract: A semiconductor device includes a pad for sense amplifier ground potential as an electrode pad supplying ground potential voltage to a sense amplifier, a first conductive line connected to the pad for sense amplifier ground potential, and a second conductive line connected to an electrode pad closest to the pad for sense amplifier ground potential among plural electrode pads included in a pad row. The second conductive line extends to the opposite side of the first conductive line with the pad row as a reference.

Abstract: Disclosed is a semiconductor memory device in which pads on a chip which are wire-bonded to lands for solder-balls of a package, respectively, are arranged on first and second sides of the chip facing to each other and are disposed on a third side of the chip as well. Four sets of the pads for data signals are respectively disposed on four regions obtained by dividing the first and second sides into the four regions. Pads for command/address signals are arranged on the third side, thereby increasing layout space for bond fingers for the data signals and achieving uniformity in wiring for data signals.

Abstract: A semiconductor device includes a first pad row and a second pad row, a first ground potential supply electrode which is connected to a first interconnect provided near the first pad row, and a second ground potential supply electrode which is connected to a second interconnect provided near the second pad row. The first pad row includes a first pad connected to the first circuit within the chip and connected to the first interconnect via a first bonding wire, and includes a second pad connected to a second circuit within the chip and connected to the second interconnect via a second bonding wire crossing over the second pad row.

Abstract: Disclosed is a multichip package or system-in package which the logic chip includes a selector circuit which, by transmitting a test mode select signal or a test mode select command to the logic chip, enables access from a logic signal pin connected to the logic chip, to a memory control signal to each of the “m” number of memory chips; and the memory control signal, when viewed from the logic chip, is connected using a one-for-one wiring scheme or a one-for-up-to-m branch wiring scheme, between the selector circuit and each of the “m” number of memory chips. This multichip package or system-in package is low in noise and high in operational reliability.

Abstract: A semiconductor device includes a semiconductor chip having at a center area thereof first and second pad rows which include a plurality of first pads and a plurality of second pads, respectively. A package substrate is bonded to the semiconductor chip. The package substrate includes a substrate opening corresponding to a region including the first and second pad rows, first and second wiring positioned at opposite sides of the substrate opening, respectively, and a ball land disposed in the first wiring area. A bridge section is provided over the substrate opening to mutually connect the first and second wiring areas. The ball land is electrically connected to at least one of the second pads through the bridge section by a lead.

Abstract: Portions of a wiring layer extending like cantilevers from an inner peripheral edge of an opening in a substrate are joined to respective terminals of a semiconductor chip mounted on the substrate. A junction portion between each portion of the wiring layer and the corresponding terminal is sealed with resin.