Abstract: An electric component box installed in an outdoor unit of an air conditioner includes: an electronic component accommodation unit that accommodates an electronic component; an intake port through which air is drawn in from outside the electric component box; a discharge port through which air is discharged from inside the electric component box; and a cooler disposed in an airflow path extending from the intake port to the electronic component accommodation unit and that cools air.

Abstract: An electric component includes a printed circuit board with each of a pair of surfaces serving as a component mounting surface. The component mounting surface has a predetermined region on which electronic components are coated with a resin. A predetermined one of the electronic components in the region is not covered with the resin at a portion above a predetermined height from the component mounting surface.

Abstract: A magnetic refrigeration system includes a plurality of heat transporters, a magnetic field application unit, and a drive mechanism. Each heat transporter is switched between a heat generating and heat absorbing states in response to magnetic field application and cancellation of the magnetic field application. The heat transporters are arranged between low and high temperature side heat exchangers. The magnetic field application unit applies a magnetic field to the heat transporters so that a heat transporter to which a magnetic field is applied and a heat transporter to which a magnetic field is not applied are alternately arranged. The drive mechanism periodically moves at least the plurality of heat transporters so that a heat transporter to which the magnetic field is applied is periodically switched and so that a state of thermal contact is periodically switched. An end portion of at least one heat transporter is a heat transfer accelerator.

Abstract: A magnetic refrigerator includes a plurality of magnetic working substances arranged at intervals in a circumferential direction, and a magnetic field application unit that causes a relative movement with respect to the magnetic working substances in the circumferential direction and applies a magnetic field to the magnetic working substances. The magnetic field application unit includes a first member spaced from the magnetic working substances in an axial direction, and first and second magnets that are arranged between the first member and the magnetic working substances and apply a magnetic field so that a magnetic flux flows in an in-plane direction of the magnetic working substances. The first and second magnets can move relative to the magnetic working substances in the circumferential direction. A refrigeration apparatus includes the magnetic refrigerator and a heating medium circuit to exchange heat with the magnetic refrigerator.

Abstract: A magnetic refrigerator includes a magnetic working substance, and a magnetic field application unit that causes a relative movement with respect to the magnetic working substance in a first direction and applies a magnetic field to the magnetic working substance. The magnetic field application unit includes magnetic poles arranged on one side of the magnetic working substance in a second direction orthogonal to the first direction, and spaced from each other in a third direction orthogonal to the first and second directions of the magnetic working substance. A refrigeration apparatus includes the magnetic refrigerator and a heating medium circuit to exchange heat with the magnetic refrigerator.

Abstract: A magnetic refrigerator includes a plurality of magnetic working substances arranged at predetermined first intervals in a first direction, and a magnetic field application unit that causes a relative movement with respect to the magnetic working substances in the first direction, and applies a magnetic field to the magnetic working substances. The magnetic field application unit includes one magnetic field generator, a first core provided closer to one magnetic pole of the magnetic field generator, and a second core provided closer to an other magnetic pole of the magnetic field generator. Three or more magnetic gaps are provided between the first core and the second core, and arranged at second intervals that are twice or more the first intervals in the first direction. A refrigeration apparatus includes the magnetic refrigerator and a heating medium circuit to exchange heat with the magnetic refrigerator.

Abstract: An electric component includes a printed circuit board with each of a pair of surfaces serving as a component mounting surface. The component mounting surface has a predetermined region on which electronic components are coated with a resin. A predetermined one of the electronic components in the region is not covered with the resin at a portion above a predetermined height from the component mounting surface.

Abstract: An electric component box installed in an outdoor unit of an air conditioner includes: an electronic component accommodation unit that accommodates an electronic component; an intake port through which air is drawn in from outside the electric component box; a discharge port through which air is discharged from inside the electric component box; and a cooler disposed in an airflow path extending from the intake port to the electronic component accommodation unit and that cools air.

Abstract: A magnetic refrigeration system includes a plurality of heat transporters, a magnetic field application unit, and a drive mechanism. Each heat transporter is switched between a heat generating and heat absorbing states in response to magnetic field application and cancellation of the magnetic field application. The heat transporters are arranged between low and high temperature side heat exchangers. The magnetic field application unit applies a magnetic field to the heat transporters so that a heat transporter to which a magnetic field is applied and a heat transporter to which a magnetic field is not applied are alternately arranged. The drive mechanism periodically moves at least the plurality of heat transporters so that a heat transporter to which the magnetic field is applied is periodically switched and so that a state of thermal contact is periodically switched. An end portion of at least one heat transporter is a heat transfer accelerator.

Abstract: A cooling member includes a heat-transfer member, a refrigerant introducing pipe and a covering material. The heat-transfer member has a surface with a groove opened to the surface of the heat-transfer member. The refrigerant introducing pipe is pressed into the groove. The covering material coats the surface of the heat-transfer member and the refrigerant introducing pipe.

Abstract: Provided is a semiconductor device in which a reverse leakage current is suppressed and the mobility of a two-dimensional electron gas is high. A semiconductor device includes: an epitaxial substrate in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane is substantially in parallel with a substrate surface; and a Schottky electrode. The epitaxial substrate includes: a channel layer made of a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); a barrier layer made of a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0); an intermediate layer made of GaN adjacent to the barrier layer; and a cap layer made of AlN and adjacent to the intermediate layer. A Schottky electrode is bonded to the cap layer.

Abstract: An epitaxial substrate having preferable two dimensional electron gas characteristic and contact characteristic is provided in the present invention. A channel layer is formed on a base substrate with GaN. A spacer layer is formed on the channel layer with AlN. A barrier layer is formed on the spacer layer with group III nitride having a composition of InXAlyGazN (wherein x+y+z=1) and at least including In, Al, and Ga such that the composition of the barrier layer is within the range surrounded with four lines defined in accordance with the composition on a ternary phase diagram with InN, AlN, and GaN as vertexes.

Abstract: For an electronic circuit apparatus including a shunt resistor, provided is a measure for improving the heat dissipation performance of the shunt resistor. The shunt resistor includes electrodes at both ends. One of the two electrodes is connected to a surface-mounting pattern on which the shunt resistor is surface-mounted. A current-generating-side pattern and a current-receiving-side pattern are arranged separately from the surface-mounting pattern. The current-generating-side pattern and the surface-mounting pattern are connected together via a connection member which creates a space between itself and a substrate.

Abstract: For an electronic circuit apparatus including a shunt resistor, provided is a measure for improving the heat dissipation performance of the shunt resistor. The shunt resistor includes electrodes at both ends. One of the two electrodes is connected to a surface-mounting pattern on which the shunt resistor is surface-mounted. A current-generating-side pattern and a current-receiving-side pattern are arranged separately from the surface-mounting pattern. The current-generating-side pattern and the surface-mounting pattern are connected together via a connection member which creates a space between itself and a substrate.

Abstract: Provided is a crack-free epitaxial substrate with reduced warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a superlattice layer group in which a plurality of superlattice layers are laminated, and a crystal layer. The superlattice layer is formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated. The crystal layer is made of a group-III nitride and formed above the base substrate so as to be positioned at an upper side of the superlattice layer group relative to the base substrate. The superlattice layer group has a compressive strain contained therein. In the superlattice layer group, the more distant the superlattice layer is from the base substrate, the greater the compressive strain becomes.

Abstract: Provided is an epitaxial substrate for use in a semiconductor element, having excellent characteristics and capable of suitably suppressing diffusion of elements from a cap layer. An epitaxial substrate for use in a semiconductor element, in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a substrate surface of the base substrate, includes: a channel layer made of a first group-III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); a barrier layer made of a second group-III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0); an anti-diffusion layer made of AlN and having a thickness of 3 nm or more; and a cap layer made of a third group-III nitride having a composition of Inx3Aly3Gaz3N (x3+y3+z3=1, z3>0).

Abstract: A cooling member includes a heat-transfer member, a refrigerant introducing pipe and a covering material. The heat-transfer member has a surface with a groove opened to the surface of the heat-transfer member. The refrigerant introducing pipe is pressed into the groove. The covering material coats the surface of the heat-transfer member and the refrigerant introducing pipe.

Abstract: Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer formed of a plurality of lamination units being continuously laminated. The lamination unit includes: a composition modulation layer formed of a first and a second unit layer having different compositions being alternately and repeatedly laminated such that a compressive strain exists therein; a termination layer formed on an uppermost portion of the composition modulation layer, the termination layer acting to maintain the compressive strain existing in the composition modulation layer; and a strain reinforcing layer formed on the termination layer, the strain reinforcing layer acting to enhance the compressive strain existing in the composition modulation layer.

Abstract: Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base. The epitaxial substrate includes a (111) single crystal Si substrate and a buffer layer including a plurality of first lamination units. Each of those units includes a composition modulation layer formed of a first composition layer made of AlN and a second composition layer made of AlxGa1-xN being alternately laminated, and a first intermediate layer made of AlyGa1-yN (0?y<1). The relationship of x(1)?x(2)? . . . ?x(n?1)?x(n) and x(1)>x(n) is satisfied, where n represents the number of laminations of each of the first and second composition layers, and x(i) represents the value of x in i-th one of the second composition layers as counted from the base substrate side. The second composition layer is coherent to the first composition layer, and the first intermediate layer is coherent to the composition modulation layer.

Abstract: Provided is a lattice-matched HEMT device, which is a HEMT device having high reverse breakdown voltage while securing two-dimensional electron gas concentration in a practical range. In producing a semiconductor device by forming a channel layer made of GaN on a base substrate such as an AlN template substrate or a substrate that includes a Si single crystal base material as a base, forming a barrier layer made of a group-III nitride having a composition of InxAlyGazN (x+y+z=1, 0?z?0.3) on the channel layer, and forming a source electrode, a drain electrode, and a gate electrode on the barrier layer, an In mole fraction x, a Ga mole fraction z, and a thickness d of the barrier layer satisfy a predetermined range.