Abstract: [Means for Solving the Problems] The outer periphery of a display medium layer is sealed by a sealant made of UV curable resin provided between first and second substrates. In the first substrate, a light shielding part including a light shielding layer is provided at a part corresponding to the sealant. In the second substrate, a part corresponding to the sealant is transparent. The light shielding part includes a face on the sealant side serving as a UV ray reflection face.

Abstract: An aspect of the present invention provides a magnetic sensor which is operated better at a high temperature range not lower than 300° C. compared with a conventional magnetic sensor. A operating layer having a heterojunction interface is formed by laminating a first layer made of GaN whose electron concentration is not more than 1×1016/cm3 at room temperature and a second layer made of AlxGa1-xN (0<x?0.3). Therefore, in a two-dimensional electron gas region, carrier mobility is further enhanced while a carrier concentration is further lowered. Accordingly, there is realized a Hall element which can be used with measurement sensitivity similar to that at room temperature by constant-current drive even at a high temperature, while having the high measurement sensitivity in both the constant-current drive and constant-voltage drive at room temperature.

Abstract: A normally-off operation type HEMT device excellent in characteristics can be realized. A two-dimensional electron gas region is formed in a periphery of a hetero-junction interface of a base layer and a barrier layer, so that access resistance in an access portion, that is, between a drain and a gate and between a gate and a source is sufficiently lowered, and at the same time, a P-type region is formed immediately under the gate. This realizes a normally-off type HEMT device having a low on-resistance. Further, when a film thickness of an insulating layer is defined as t (nm) and a relative permittivity of a substance forming the insulating layer is defined as k, a threshold voltage as high as +3 V or more can be attained by satisfying k/t?0.85 (nm?1).

Abstract: A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0?x?1, 0?y?1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

Abstract: A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0?x?1, 0?y?1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

Abstract: A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

Abstract: A power module includes a power semiconductor, a non-power semiconductor, one resin substrate and a cooling device. The power semiconductor and the non-power semiconductor configure a power supply circuit for performing power conversion. Both the power semiconductor and the non-power semiconductor are mounted on the resin substrate. The cooling device is disposed in order to cool the power semiconductor.

Abstract: An object of the invention is to provide a light reflective film which can prevent moire fringes from occurring. A rough face in which a plurality of rows of pyramidal convex portions that are linearly continuous are adjacently formed in parallel with one another is formed on one face of a die film. The rows of convex portions that are linearly continuous are inclined at a predetermined angle with respect to an edge of the die film. An optical film is produced by transferring the die film. A light reflective film is produced by vapor-depositing a light reflection film on the optical film. In a liquid crystal display panel having the light reflective film, the pitch of occurring moire fringes becomes so small that the moire fringes cannot be visually seen, and moire fringes can be prevented from occurring.

Abstract: A group III nitride underlayer including at least Al, having a dislocation density of ?1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ?200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ?50% and in which a carrier density is ?1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ?50%.

Abstract: A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.

Abstract: A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

Abstract: On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has a composition of AlpGaqIn1?p?qN (0?p?1, 0?y?q). A GaN-based semiconductor layer group is formed on the buffer layer.

Abstract: A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III–V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

Abstract: A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride including at least 50 atomic percent of elemental Al for each of the Group III elements of the underfilm Group III nitride. The surface of the underfilm includes a contoured portion and a flat region, and less than 50% of the surface is occupied by the flat region.

Abstract: A group III nitride underlayer including at least Al, having a dislocation density of ?1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ?200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ?50% and in which a carrier density is ?1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ?50%.

Abstract: A group III nitride underlayer including at least Al, having a dislocation density of ?1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ?200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ?50% and in which a carrier density is ?1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ?50%.

Abstract: A substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is provided. A nitride film containing at least Al is formed on a 6H—SiC base by CVD at a temperature of at least 1100° C., for example. The substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is obtained by setting the dislocation density of the nitride film to not more than 1×1011/cm2, the full width at half maximum of an X-ray rocking curve for (002) plane to not more than 200 seconds and the full width at the half maximum of the X-ray rocking curve for (102) plane to not more than 1500 seconds.

Abstract: A technique for suppressing bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer, mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0?x?1, 0?y?1, x+y=1) (or a crystal of GaN), does not contains Al. The interlayer is epitaxially formed at a growth temperature lower than those of the group III-nitride layers, more specifically at a temperature of at least 350° C. and not more than 1000° C.

Abstract: In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.

Abstract: In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.