Abstract: A detection device is provided which comprises an examination flow channel for passing a fluid containing a detection object, a reference flow channel extending adjacently along the examination flow channel, an interaction film interposed between the examination flow channel and the reference flow channel for causing an interaction thereof, a light emission unit for injecting a detecting light into the reference flow channel, and a detection unit for receiving the detecting light. This device is used for recognizing the state of the detection object in the examination flow channel from deflection of the optical path of the detecting light caused by the interaction.

Abstract: Sensors are provided which enable detection with a high sensitivity in microchemistry and biochemical analysis by using devices integrated into a compact configuration and can be freely disposed on desired positions of a channel to perform detection. A measuring apparatus for detecting information and outputting light according to the information, the apparatus comprising: an active layer for emitting light and a micro-optical cavity, wherein light emission is limited in the active layer due to the influence of the selection of a photoelectromagnetic field mode, the selection is made by the micro-optical cavity, the light emission and a degree of selection of a photoelectromagnetic field mode is changed according to an environmental condition of the micro-optical cavity, so that the light emission is changed and the environmental condition is measured according to a change in the light emission.

Abstract: An exposure apparatus including a first exposure device for illuminating a predetermined mask with light of a predetermined wavelength under a first mask-illumination condition, to print a first pattern on a predetermined exposure region, and a second exposure device for illuminating the predetermined mask with light of the predetermined wavelength under a second mask-illumination condition, different from the first mask-illumination condition, to superposedly print a second pattern on the predetermined exposure region where the first pattern has been printed. A first exposure by the first exposure device and a second exposure by the second exposure device are carried out simultaneously, prior to a development process.

Abstract: An exposure apparatus for irradiating exposure light onto a surface of an object to be exposed applied with a resist to form a pattern on the surface, wherein near-field light is used as the exposure light. The apparatus includes an alignment system for performing alignment using the near-field light, the alignment system detecting position information of the object to be exposed by irradiating light from an illumination device onto an alignment mark formed on the surface of the object to be exposed, and an alignment probe for detecting near-field light in the vicinity of the alignment mark.

Abstract: An exposure apparatus includes a first exposure device for illuminating a predetermined mask with light of a predetermined wavelength under a first illumination condition, to print a first pattern on a predetermined exposure region, and a second exposure device for illuminating the mask with light of the predetermined wavelength under a second illumination condition, different from the first illumination condition, to print a second pattern on the predetermined exposure region, in which the mask has a desired pattern and an auxiliary pattern having a shape different from that of the desired pattern, and a first exposure by the first exposure device and a second exposure by the second exposure device are carried out prior to a development process.

Abstract: An exposure apparatus including a first exposure device for illuminating a predetermined mask with light of a predetermined wavelength under a first mask-illumination condition, to print a first pattern on a predetermined exposure region, and a second exposure device for illuminating the predetermined mask with light of the predetermined wavelength under a second mask-illumination condition, different from the first mask-illumination condition, to superposedly print a second pattern on the predetermined exposure region where the first pattern has been printed. A first exposure by the first exposure device and a second exposure by the second exposure device are carried out simultaneously, prior to a development process.

Abstract: A method for forming, on a mask, a mask pattern used for exposure. The mask pattern includes a first pattern that blends plural types of patterns, and second pattern that is smaller in size than the first pattern. The mask pattern is arranged on the mask so that the first pattern may be resolved and the second pattern is restrained from being resolved.

Abstract: A projection exposure apparatus having an exposure mode for exposing a mask to transfer a pattern image of the mask onto a photosensitive substrate.

Abstract: A position detection device for detecting a position of an object. The detection device includes an irradiation device for irradiating light onto an alignment mark formed on a surface of the object, a probe for detecting near-field light in the vicinity of the alignment mark upon irradiation by the irradiation device and a detector for detecting position information of the object on the basis of the near-field light detected by the probe.

Abstract: A mask is composed of a substrate, and a pattern having a transmission factor formed on the substrate by using a material, wherein an optical path length difference between light beams respectively passing the pattern and an area adjacent thereto is greater than 1 ( m - 1 8 ) ⁢ λ

Abstract: A method for creating a mask pattern used in multiple exposure for carrying out overlay printing of a micro-line pattern and a mask pattern a minimum line width of which is wider than a line width of the micro-line pattern to form a target pattern having a minimum line width corresponding to the line width of the micro-line pattern, the method having: a step of preparing data of the target pattern desired to form after the exposure; a step of carrying out a logical operation of predetermined micro-line pattern data and the target pattern data; a step of dividing a surface of the mask pattern into plural types of areas, based on the result of the logical operation; a step of setting a single light transmittance or a plurality of light transmittances required or allowed for the types of areas and grouping areas for which one light transmittance can be selected, in each light transmittance; and a step of synthesizing a synthetic pattern from grouped patterns formed in the respective light transmittances, w

Abstract: A method for forming, on a mask, a mask pattern used for exposure. The mask pattern includes a first pattern that blends plural types of patterns, and second pattern that is smaller in size than the first pattern. The mask pattern is arranged on the mask so that the first pattern may be resolved and the second pattern is restrained from being resolved.

Abstract: A mask is composed of a substrate, and a pattern having a transmission factor formed on the substrate by using a material, wherein an optical path length difference between light beams respectively passing the pattern and an area adjacent thereto is greater than ( m - 1 8 ) ⁢ λ and less than ( m + 1 8 ) ⁢ λ , where &lgr; is a wavelength of incident light, and m is an integer.

Abstract: An exposure method for transferring a device pattern to a resist, wherein the device pattern includes a first element and a second element having a linewidth narrower than the first element. The method includes a first exposure step for exposing the resist by use of an interference fringe, produced by interference of two light beams, through an exposure amount substantially not greater than a threshold of the resist, and a second exposure step for exposing the resist with a light pattern related to the first and second elements.

Abstract: A method for creating a mask pattern used in multiple exposure for carrying out overlay printing of a micro-line pattern and a mask pattern a minimum line width of which is wider than a line width of the micro-line pattern to form a target pattern having a minimum line width corresponding to the line width of the micro-line pattern, the method having:

Abstract: An exposure apparatus has a first exposure part which exposes a wafer directly with an exposure beam and a second exposure part which projects and exposes a pattern of a mask onto the wafer. The exposure system performs multiple exposure including performing exposure a plurality of times by using the first exposure part and the second exposure part.

Abstract: A projection exposure apparatus, having a multiple exposure mode, for projecting a pattern of a mask onto a wafer. In the apparatus, an illumination system illuminates the mask and a projection system supplies into an optical path a filter which blocks a zero-order light beam of diffracted light projected from the mask. An exposure step in the mode of multiple exposure is performed in a state in which the filter has been supplied into the optical path.

Abstract: A projection exposure apparatus having a multiple exposure mode includes an illumination system and a projection system. In the multiple exposure mode, a filter which blocks a zero-order light beam among a plurality of light beams coming from a mask illuminated by the illumination system is automatically or manually supplied into an optical path of the projection system. Then, an exposure step in the multiple exposure mode is performed in a state in which the filter has been supplied into the optical path.

Abstract: An exposure method for transferring a device pattern to a resist, wherein the device pattern includes a first element and a second element having a linewidth narrower than the first element. The method includes a first exposure step for exposing the resist by use of an interference fringe, produced by interference of two light beams, through an exposure amount substantially not greater than a threshold of the resist, and a second exposure step for exposing the resist with a light pattern related to the first and second elements.

Abstract: An exposure system includes a first exposure part arranged to perform a probe exposure, and a second exposure part arranged to perform a projection exposure, wherein the exposure system has a multiple exposure mode in which a multiple exposure is performed by using both the first exposure part and the second exposure part in combination.