Abstract: An electronic device having a structure of an ohmic connection to a carbon element cylindrical structure body, wherein a metal material is positioned inside the junction part of a carbon element cylindrical structure body joined to a connection objective and the carbon element cylindrical structure body and the connection objective are connected by an ohmic contact. Methods for producing such an electronic device are also disclosed. Further, a method for growing a carbon nanotube is disclosed.

Abstract: According to a method of manufacturing carbon nanotubes, minute concavities and convexities are formed at a surface of a substrate, a catalyst metal layer having a predetermined film thickness is formed on the surface having the concavities and convexities, the substrate is subject to a heat treatment at a predetermined temperature to change the catalyst metal layer into a plurality of isolated fine particles. The catalyst metal fine particles have a uniform particle diameter and uniform distribution. Then, the substrate supporting the plurality of fine particles is placed in a carbon-containing gas atmosphere to grow carbon nanotubes on the catalyst metal fine particles by a CVD method using the carbon-containing gas. The carbon nanotubes can be formed to have a desired diameter and a desired shell number with superior reproducibility.

Abstract: A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the insulating film. Thus, the position of the filament-shaped current path which contributes to the resistance states of the resistance memory element can be controlled by the positions and the density of the cylindrical electrodes.

Abstract: An electronic device includes a conductive pattern formed on a first insulating film, a second insulating film formed on the conductive pattern and the first insulating film, a hole formed in the second insulating film on the conductive pattern, carbon nanotubes formed in the hole to extend from a surface of the conductive pattern, and a buried film buried in clearances among the carbon nanotubes in the hole.

Abstract: A CNT bundle is formed by growing a plurality of CNTs from opposing surfaces of contact blocks toward mutual opposing surfaces, and by contacting the CNTs so that they intersect to electrically connect with each other. Subsequently, a gap of the electrically connected CNT bundle is filled with a metal material, to thereby form a wiring being a composite state of the CNT bundle and the metal material.

Abstract: A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600° C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.

Abstract: A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) forming a catalyst layer on the growth mode control layer, and (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part. The growth mode control layer is formed by sputtering or vacuum deposition in an atmospheric gas, using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth mode is controlled in accordance with a predetermined concentration of oxygen gas of the atmospheric gas.

Abstract: A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) forming a catalyst layer on the growth mode control layer, and (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part. The growth mode control layer is formed by sputtering or vacuum deposition in an atmospheric gas, using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth mode is controlled in accordance with a predetermined concentration of oxygen gas of the atmospheric gas.

Abstract: A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600° C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.

Abstract: After forming an opening, a resist film is formed on the entire surface and a resist pattern is formed by patterning the resist film. The shape of the resist pattern is such that it covers one side of the bottom of the opening. As a result, a Si substrate is exposed only in one part of the opening. Then, using the resist pattern as a mask, a catalytic layer is formed on the bottom of the opening. Then, the resist pattern is removed. Carbon nanotubes are grown on the catalytic layer. At this time, since the catalytic layer is formed on only one side of the bottom of the opening, the Van der Waals force biased towards that side works horizontally on the growing carbon nanotubes. Therefore, the carbon nanotubes are attracted towards the nearest side of the SiO2 film and grow biased towards that side.

Abstract: The present invention is an object to provide a high-performance vertical field effect transistor having a microminiaturized structure in which the distance between the gate and the channel is made short not through a microfabrication process, having a large gate capacitance, and so elaborated that the gate can control the channel current with a low voltage, and a method for simply and efficiently manufacturing such a field effect transistor not through a complex process such as a microfabrication process.

Abstract: A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) forming a catalyst layer on the growth mode control layer, and (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part. The growth mode control layer is formed by sputtering or vacuum deposition in an atmospheric gas, using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth mode is controlled in accordance with a predetermined concentration of oxygen gas of the atmospheric gas.

Abstract: Disclosed is a wiring connection structure comprising a wiring on which a preferable carbon nanotube can be formed, and a method for forming the same. On a lower layer Cu wiring, Mo is deposited to form a connection layer. On this connection layer, a carbon nanotube is grown using a CVD method. When the connection layer composed of Mo is formed, the following advantages can be obtained. Even when heat is applied during the CVD for growing the carbon nanotube, thermal diffusion of Cu in the lower layer Cu wiring is suppressed so that activity of the catalyst metal can be kept. Further, since the contact resistance between Mo and the carbon nanotube is low, a low resistance connection between the lower layer Cu wiring and the carbon nanotube can be secured and at the same time, a preferable carbon nanotube can be formed.

Abstract: A semiconductor device uses a carbon nanotube structure, which reduces an electric resistance and a thermal resistance by increasing a density of the carbon nanotubes. An insulation film covers a first electrically conductive material. A second electrically conductive material is provided on the insulation film. A plurality of carbon nanotubes extend through the insulation film by being filled in an opening part that exposes the first electrically conductive material. The carbon nanotubes electrically connect the first electrically conductive material and the second electrically conductive material to each other. Ends of the carbon nanotubes are fixed to a recessed part provided on a surface of the first electrically conductive material.

Abstract: A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) forming a catalyst layer on the growth mode control layer, and (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part. The growth mode control layer is formed by sputtering or vacuum deposition in an atmospheric gas, using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth mode is controlled in accordance with a predetermined concentration of oxygen gas of the atmospheric gas.

Abstract: An electronic device utilizing electric conduction generated by the movement of electrons or positive holes of a semiconductor, includes a semiconductor member or members, a conductive member or members and an insulating member or members, the electronic device comprising a member or members formed of a metal silicide as the conductive member or members, and a carbon element linear structure or structures connected to the member or members formed of the conductive silicide. A production method of such an electronic device is also disclosed.

Abstract: An electronic device utilizing electric conduction generated by the movement of electrons or positive holes of a semiconductor, includes a semiconductor member or members, a conductive member or members and an insulating member or members, the electronic device comprising a member or members formed of a metal silicide as the conductive member or members, and a carbon element linear structure or structures connected to the member or members formed of the conductive silicide. A production method of such an electronic device is also disclosed.

Abstract: Disclosed is a semiconductor device including a SiC substrate and a heat conductor formed in a hole in the SiC substrate and made of a linear structure of carbon elements.

Abstract: A semiconductor triode comprises a gate electrode provided on a channel layer, wherein there is interposed an insulating metal oxide layer between a top surface of the channel layer and the gate electrode.

Abstract: An electronic device having a structure of an ohmic connection to a carbon element cylindrical structure body, wherein a metal material is positioned inside the junction part of a carbon element cylindrical structure body joined to a connection objective and the carbon element cylindrical structure body and the connection objective are connected by an ohmic contact. Methods for producing such an electronic device are also disclosed. Further, a method for growing a carbon nanotube is disclosed.