Patents by Inventor Mo Chen

Mo Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190342745
    Abstract: Embodiments of this application provide a near-field wireless communication service processing method performed at a first computing device associated with a social networking application. While running a social networking application, the first computing device detects a near-field wireless communication signal broadcasted by a second computing device associated with a service provider account registered with the social networking application.
    Type: Application
    Filed: July 18, 2019
    Publication date: November 7, 2019
    Inventors: Kai MA, Maohua CHEN, Mo ZHAO, Zhenxi QIU, Xiaoming WU, Nan CHENG, Xiaohui ZHENG, Junxiong CHEN, Jinheng XIE, Zhe CHENG, Le YU, Shuhui MEI, Chi ZHANG, Huiqin YANG, Yao QIN, Shunfu YE, Tao ZHANG, Wenrong TANG, Yangbin HUANG, Ming HE, Chaoxiong DIAO, Pengbo ZHANG, Guanqiao SU, Hongmin ZHENG, Xiaojuan ZHANG, Zhejin HUANG, Xiaoyang QIAN, Zhongming GUO, Xiaoyi FANG, Yang ZUO, Yan DAI
  • Patent number: 10459900
    Abstract: A set of documents is parsed. Members of the set of documents include a set of text elements and a set of visual elements. A text content stream based on the set of text elements and a visual content stream based on the set of visual elements are produced. For respective documents, a set of respective visual element summarizations is built from the visual content stream. Each visual summarization includes a text description of a respective visual element in the respective document. A holistic index is created by indexing the text content from the text content stream and the text descriptions of the visual elements in a single search index. The indexing uses a set of semantic relationships between the text content from the text content stream and the textual descriptions of the visual elements. A user interface allows a user to selectively search text content and visual content.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: October 29, 2019
    Assignee: International Business Machines Corporation
    Inventors: Ying Chen, Ioana Roxana Stanoi, Su Yan, Mo Yu
  • Publication number: 20190305675
    Abstract: The present embodiments relate generally to switched-capacitor (SC) based DC-DC converters, and more particularly to modulation schemes of cap dividers that include ceramic capacitors such as MLCCs. According to certain general aspects, the present embodiments increase the switching frequency at light loads using variable frequency modulation schemes to reduce the voltage difference across the MLCCs. In these and other embodiments, the acoustic noise generated from the MLCCs can be reduced while maintaining excellent light load efficiency. According to certain aspects, this can be achieved with minimal impact on system performance, cost and size.
    Type: Application
    Filed: April 11, 2019
    Publication date: October 3, 2019
    Inventors: Yen-Mo CHEN, Bin LI, Mehul SHAH, Sungkeun LIM
  • Patent number: 10431143
    Abstract: A shift register includes a first input circuit, a second input circuit, and a pull-up transistor. The first input circuit is coupled to a first input terminal and a first pull-up node, and configured to electrically connect the first input terminal to the first pull-up node when the first input terminal receives an active signal. The second input circuit is coupled to a second input terminal and a second pull-up node, and configured to electrically connect the second input terminal to the second pull-up node when the second input terminal receives an active signal. The pull-up transistor includes a first gate electrode coupled to the first pull-up node and a second gate electrode coupled to the second pull-up node.
    Type: Grant
    Filed: October 10, 2017
    Date of Patent: October 1, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONCIS TECHNOLOGY CO., LTD.
    Inventors: Miao Zhang, Mo Chen, Jing Sun, Wuxia Fu
  • Patent number: 10424480
    Abstract: A method of making a thin film transistor, the method including: providing an insulating layer on a semiconductor substrate, forming a semiconductor layer on the insulating layer; locating a first photoresist layer, a nanowire structure, a second photoresist layer on the semiconductor layer, wherein the nanowire structure comprises a nanowire; forming an opening in the first photoresist layer and the second photoresist layer to form an exposed surface, wherein a part of the nanowire is exposed in the opening; depositing a conductive film layer on the exposed surface of the semiconductor layer, wherein the conductive film layer defines a nano-scaled channel corresponding to the nanowire, and the conductive film layer is divided into two regions by the nano-scaled channel, one region is used as a source electrode, and the other region is used as a drain electrode; forming a gate electrode on the semiconductor substrate.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: September 24, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Mo Chen, Qun-Qing Li, Li-Hui Zhang, Xiao-Yang Xiao, Jin Zhang, Shou-Shan Fan
  • Patent number: 10424479
    Abstract: A method of making nano-scaled channel, the method including: locating a first photoresist layer, a nanowire structure, and a second photoresist layer on a surface of a substrate, and the nanowire structure being sandwiched between the first photoresist layer and the second photoresist layer, wherein the nanowire structure comprises an nanowire; forming an opening in the first photoresist layer and the second photoresist layer to expose a portion of the surface of the substrate to form an exposed surface, wherein a part of the nanowire is exposed and suspended in the opening, and both ends of the nanowire are sandwiched between the first photoresist layer and the second photoresist layer; and depositing a thin film layer on the exposed surface of the substrate using the a nanowire as a mask, wherein the thin film layer defines a nano-scaled channel corresponding to the at least one nanowire.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: September 24, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Mo Chen, Qun-Qing Li, Li-Hui Zhang, Xiao-Yang Xiao, Jin Zhang, Shou-Shan Fan
  • Patent number: 10418253
    Abstract: A method of making nanostructures including: locating a photoresist mask layer on a substrate, the thickness of the photoresist mask layer is H; forming a patterned mask layer includes a plurality of stripe masks, a spacing distance between adjacent stripe masks equals L; depositing a first thin film layer along a first direction, the thickness of the first thin film layer is D, a first angle between the first direction and a direction along the thickness of stripe masks is ?1, ?1<tan?1(L/H); depositing a second thin film layer along a second direction, a second angle between the second direction and the direction along the thickness of stripe masks is ?2, ?2<tan?1[L/(H+D)], 0<L?H tan ?1?(H+D)tan?2<10 nm, the first thin film layer partly overlaps with the second thin film layer to form an overlapping structure; etching the first thin film layer and the second thin film layer to obtain a nanoscale microstructure.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: September 17, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Mo Chen, Li-Hui Zhang, Qun-Qing Li, Shou-Shan Fan
  • Patent number: 10412573
    Abstract: Embodiments of this application provide a near-field wireless communication service processing method performed at a first computing device. While running a social networking application, the first computing device listens to a near-field wireless communication signal broadcasted by a second computing device. After detecting the near-field wireless communication signal broadcasted by the second computing device, first computing device processes the near-field wireless communication signal to obtain identification information associated with the second computing device. The first computing device sends the identification information associated with the second computing device to a remote server supporting the social networking application and obtains a preset service page corresponding to the identification information associated with the second computing device from the server, and displays the preset service page within the social networking application on the first computing device.
    Type: Grant
    Filed: August 6, 2018
    Date of Patent: September 10, 2019
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Kai Ma, Maohua Chen, Mo Zhao, Zhenxi Qiu, Xiaoming Wu, Nan Cheng, Xiaohui Zheng, Junxiong Chen, Jinheng Xie, Zhe Cheng, Le Yu, Shuhui Mei, Chi Zhang, Huiqin Yang, Yao Qin, Shunfu Ye, Tao Zhang, Wenrong Tang, Yangbin Huang, Ming He, Chaoxiong Diao, Pengbo Zhang, Guanqiao Su, Hongmin Zheng, Xiaojuan Zhang, Zhejin Huang, Xiaoyang Qian, Zhongming Guo, Xiaoyi Fang, Yang Zuo, Yan Dai
  • Patent number: 10403218
    Abstract: A Mura compensation circuit and method, a driving circuit and a display device are provided. The Mura compensation circuit comprises: a vertical Mura compensation unit, for providing a corresponding gamma voltage to a vertical block Mura region and a vertical non-Mura region of a display panel respectively, to compensate for a vertical Mura phenomenon; and/or a horizontal Mura compensation unit, for providing a corresponding gate drive signal and/or a corresponding charging/discharging control signal to a horizontal block Mura region and a horizontal non-Mura region of a display panel respectively, to compensate for a horizontal Mura phenomenon. The Mura compensation circuit can make the different regions of the display panel have the same display effect, and improve reduction of display quality caused by impedance difference at different positions of the display panel, thereby raising the quality of a picture, and can be promoted and applied widely.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: September 3, 2019
    Assignees: BOE Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventors: Jian Zhao, Mo Chen, Yudong Liu, Xiong Xiong
  • Publication number: 20190245068
    Abstract: A method of making a thin film transistor, the method includes: providing a semiconductor layer; arranging a first photoresist layer, a nanowire structure, a second photoresist layer on the semiconductor layer, wherein the nanowire structure includes a single nanowire; forming one opening in the first photoresist layer and the second photoresist layer to form an exposed surface, wherein a part of the nanowire is exposed and suspended in the opening; depositing a conductive film layer on the exposed surface using the nanowire structure as a mask, wherein the conductive film layer defines a nano-scaled channel, and the conductive film layer is divided into two regions, one region is used as a source electrode, and the other region is used as a drain electrode; forming an insulating layer on the semiconductor layer to cover the source electrode and the drain electrode, and locating a gate electrode on the insulating layer.
    Type: Application
    Filed: April 18, 2019
    Publication date: August 8, 2019
    Inventors: MO CHEN, QUN-QING LI, LI-HUI ZHANG, XIAO-YANG XIAO, JIN ZHANG, SHOU-SHAN FAN
  • Patent number: 10372031
    Abstract: A method of making microstructures, the method including: providing a first substrate, setting a photoresist layer on a surface of the first substrate; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate comprises a second substrate and a carbon nanotube composite layer located on a surface of the second substrate; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; developing the exposed photoresist layer to obtain a patterned photoresist microstructures.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: August 6, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Mo Chen, Qun-Qing Li, Li-Hui Zhang, Yuan-Hao Jin, Dong An, Shou-Shan Fan
  • Patent number: 10354709
    Abstract: A magnetic device may include a composite free layer that includes a first sub-layer comprising at least one of a Co-based alloy, a Fe-based alloy, or a Heusler alloy; a second sub-layer comprising at least one of a Co-based alloy, a Fe-based alloy, or a Heusler alloy; and an intermediate sub-layer between the first sub-layer and the second sub-layer. The composite free layer exhibits a magnetic easy axis oriented out of a plane of the composite free layer.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: July 16, 2019
    Assignee: Regents of the University of Minnesota
    Inventors: Jian-Ping Wang, Junyang Chen, Mo Li
  • Patent number: 10339865
    Abstract: The present disclosure provides a pixel driver circuit, a pixel circuit, a display panel and a display device. The pixel driver circuit includes two pixel driving units having an identical structure. Each pixel driving unit includes a driving transistor and a driving control module. A gate electrode of the driving transistor is connected to the driving control module, a first electrode thereof receives a first power voltage, and a second electrode thereof is connected to the driving control module and a light-emitting element. The driving control module is connected to a data line, a gate line, and the gate electrode and the second electrode of the driving transistor, and controls a potential at the gate electrode of the driving transistor in accordance with a data voltage applied to the data line under control of a gate driving signal from the gate line, so as to turn on/off the driving transistor.
    Type: Grant
    Filed: March 1, 2016
    Date of Patent: July 2, 2019
    Assignees: BOE TECHNOLOGY GROUP CO. LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Mo Chen, Jian Zhao, Miao Zhang, Jing Sun, Songmei Sun
  • Patent number: 10331577
    Abstract: A method for DRAM protection comprises allocating address spaces respectively for a first and second common region, a first and second secure region; detecting whether common data has an address within the address spaces for the first secure region; outputting a digital signal remapping an address of the common data to the address space for the second common region if yes; detecting whether secure data has an address within the address spaces for the first common region; outputting a digital signal indicating remapping an address of the secure data to the address space for the second secure region if yes. Alternatively, the method further comprises generating a random key; an updated written data by permuting orders of bits of an original DRAM written data; generating an encrypted data by performing a function on the updated written data with the generated random key; and dynamically updating the generated random key.
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: June 25, 2019
    Assignee: MONTAGE TECHNOLOGY CO., LTD.
    Inventors: Shuna Xu, Guobing Mo, Cheng-Tie Chen
  • Patent number: 10312354
    Abstract: A method of making a thin film transistor, the method including: forming a gate insulating layer on a gate electrode; placing a semiconductor layer on the gate insulating layer; locating a first photoresist layer, a nanowire structure, a second photoresist layer on the semiconductor layer, the nanowire structure being sandwiched between the first photoresist layer and the second photoresist layer, wherein the nanowire structure comprises one nanowire; forming one opening in the first photoresist layer and the second photoresist layer to form an exposed surface, wherein a part of the nanowire is exposed in the opening; depositing a conductive film layer on the exposed surface of the semiconductor layer, wherein the conductive film layer defines a nano-scaled channel corresponding to the nanowire, the conductive film layer is divided into two regions, one region is used as a source electrode, the other region is used as a drain electrode.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: June 4, 2019
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Mo Chen, Qun-Qing Li, Li-Hui Zhang, Xiao-Yang Xiao, Jin Zhang, Shou-Shan Fan
  • Patent number: 10289156
    Abstract: In one of the exemplary embodiments of the disclosure, a method of controlling through a cover of a mobile electronic device would include not limited to detecting, by the mobile electronic device, for a first event and a device triggering event; displaying, through openings of the cover on the touch screen, a first image; replacing the first image with a second image that corresponds to the first event in response to the first event being detected; displaying, through the openings of the cover on the touch screen, a third image corresponding to the device triggering event while the first image or the second image is still being displayed; and performing a function corresponding to the device triggering event in response to a touch input on third image being detected by the touch screen through the cover.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: May 14, 2019
    Assignee: HTC Corporation
    Inventors: Tai-Hsin Ku, Chia-Mo Chien, Sheng-Hsin Huang, Fang-Ju Lin, Wei-Chia Yen, Jen-Hou Huang, Chun-Ta Chen
  • Patent number: 10241145
    Abstract: The present disclosure provides a gate driving circuit, a method for detecting the gate driving circuit, an array substrate and a display apparatus. The gate driving circuit comprises a plurality of cascaded gate driving units, access units, a first signal line and a second signal line. Each access unit is connected to its corresponding gate driving unit and the gate driving unit at the next stage to its corresponding gate driving unit. The access unit corresponding to the gate driving unit at each odd stage is connected to the first signal line such that the first signal line detects an output signal from that gate driving unit via the access unit, and the access unit corresponding to the gate driving unit at each even stage is connected to the second signal line such that the second signal line detects an output signal from that gate driving unit via the access unit.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: March 26, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Miao Zhang, Jinliang Liu, Mo Chen, Jing Sun, Songmei Sun
  • Publication number: 20190088190
    Abstract: A shift register includes a first input circuit, a second input circuit, and a pull-up transistor. The first input circuit is coupled to a first input terminal and a first pull-up node, and configured to electrically connect the first input terminal to the first pull-up node when the first input terminal receives an active signal. The second input circuit is coupled to a second input terminal and a second pull-up node, and configured to electrically connect the second input terminal to the second pull-up node when the second input terminal receives an active signal. The pull-up transistor includes a first gate electrode coupled to the first pull-up node and a second gate electrode coupled to the second pull-up node.
    Type: Application
    Filed: October 10, 2017
    Publication date: March 21, 2019
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD .
    Inventors: Miao Zhang, Mo Chen, Jing Sun, Wuxia Fu
  • Publication number: 20190080779
    Abstract: A shift register circuit includes a set circuit, a first reset circuit, a first control circuit, and an output circuit. The output circuit is configured to change an active potential at the first node further away from an inactive potential in response to a first clock signal transferred to a signal output terminal being active, and the first control circuit is further configured to, responsive to the first clock signal transferred to the signal output terminal being active, restrict a change in the active potential at the first node based on a second reference voltage from a second reference voltage, the second reference voltage having a magnitude between an active input pulse and the inactive potential.
    Type: Application
    Filed: September 26, 2017
    Publication date: March 14, 2019
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Yang ZHANG, Jinliang LIU, Mo CHEN, Jian ZHAO, Jilei GAO, Songmei SUN
  • Publication number: 20190074302
    Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and a display panel are provided. The thin film transistor includes: a base substrate; and a gate electrode, a gate insulating layer, an active layer and a source/drain electrode layer which are on the base substrate. The source/drain electrode layer includes a source electrode and a drain electrode. The thin film transistor further includes a light blocking layer surrounding the active layer.
    Type: Application
    Filed: September 28, 2017
    Publication date: March 7, 2019
    Inventors: Jilei GAO, Xuebing JIANG, Songmei SUN, Peng WU, Jian ZHAO, Yang ZHANG, Mo CHEN