Patents by Inventor Mohammed Tanvir Quddus
Mohammed Tanvir Quddus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11380805Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: GrantFiled: January 11, 2021Date of Patent: July 5, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Zia Hossain
-
Publication number: 20210135019Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: ApplicationFiled: January 11, 2021Publication date: May 6, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Zia HOSSAIN
-
Patent number: 10923604Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: GrantFiled: December 20, 2019Date of Patent: February 16, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Zia Hossain
-
Patent number: 10847660Abstract: A method of forming a semiconductor device includes providing a region of semiconductor material comprising a major surface. A termination trench is provided extending from a first portion of the major surface into the region of semiconductor material to a first depth and has a first width. A first active trench is provided extending from a second portion of the major surface into the region of semiconductor material to a second depth and has a second width less than the first width. A second active trench is provided extending from a third portion of the major surface into the region of semiconductor material to a third depth and has a third width less than the first width. A first conductive material is provided adjoining a fourth portion of the major surface, which is configured as a Schottky barrier. The selected trench depth difference alone or in combination with other features provides a semiconductor device having improved performance characteristics.Type: GrantFiled: August 20, 2019Date of Patent: November 24, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Michael Thomason
-
Patent number: 10847659Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: GrantFiled: August 1, 2019Date of Patent: November 24, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar
-
Patent number: 10700219Abstract: A method for manufacturing a semiconductor component includes forming first mesa and second mesa structures from a semiconductor material by etching trenches into the semiconductor material. A doped region having a multi-concentration dopant profile is formed in at least the first mesa structure and doped polysilicon is formed in the trenches. The trenches are formed in a geometric pattern. A contact having three contact types is formed, wherein a first contact type is formed to the first mesa structure, a second contact type is formed to the second mesa structure, and a third contact type is formed to the doped polysilicon in the trenches. The first contact type has electrical properties between a conventional Schottky contact and a conventional Ohmic contact without being a conventional Schottky contact or a conventional Ohmic contact, the second contact type is a Schottky contact, the third contact type is an Ohmic contract.Type: GrantFiled: February 13, 2020Date of Patent: June 30, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Jefferson W. Hall
-
Publication number: 20200185543Abstract: A method for manufacturing a semiconductor component includes forming first mesa and second mesa structures from a semiconductor material by etching trenches into the semiconductor material. A doped region having a multi-concentration dopant profile is formed in at least the first mesa structure and doped polysilicon is formed in the trenches. The trenches are formed in a geometric pattern. A contact having three contact types is formed, wherein a first contact type is formed to the first mesa structure, a second contact type is formed to the second mesa structure, and a third contact type is formed to the doped polysilicon in the trenches. The first contact type has electrical properties between a conventional Schottky contact and a conventional Ohmic contact without being a conventional Schottky contact or a conventional Ohmic contact, the second contact type is a Schottky contact, the third contact type is an Ohmic contract.Type: ApplicationFiled: February 13, 2020Publication date: June 11, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Jefferson W. HALL
-
Publication number: 20200127145Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: ApplicationFiled: December 20, 2019Publication date: April 23, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Zia HOSSAIN
-
Patent number: 10608122Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalls and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the doped region with the multi-concentration impurity profile.Type: GrantFiled: March 13, 2018Date of Patent: March 31, 2020Assignee: SEMICONDUTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Jefferson W. Hall
-
Patent number: 10566466Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: GrantFiled: April 26, 2019Date of Patent: February 18, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Zia Hossain
-
Publication number: 20200006579Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: ApplicationFiled: April 26, 2019Publication date: January 2, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Zia HOSSAIN
-
Publication number: 20200006580Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: ApplicationFiled: August 1, 2019Publication date: January 2, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR
-
Publication number: 20190386153Abstract: A method of forming a semiconductor device includes providing a region of semiconductor material comprising a major surface. A termination trench is provided extending from a first portion of the major surface into the region of semiconductor material to a first depth and has a first width. A first active trench is provided extending from a second portion of the major surface into the region of semiconductor material to a second depth and has a second width less than the first width. A second active trench is provided extending from a third portion of the major surface into the region of semiconductor material to a third depth and has a third width less than the first width. A first conductive material is provided adjoining a fourth portion of the major surface, which is configured as a Schottky barrier. The selected trench depth difference alone or in combination with other features provides a semiconductor device having improved performance characteristics.Type: ApplicationFiled: August 20, 2019Publication date: December 19, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Michael THOMASON
-
Patent number: 10439075Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.Type: GrantFiled: June 27, 2018Date of Patent: October 8, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar
-
Patent number: 10431699Abstract: In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. A first active trench is configured to be at a shallower depth than the termination trench to provide a trench depth difference. A second active trench is configured to be at a depth similar to the termination trench. The selected trench depth difference in combination with one or more of the other second active trench depth, the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, first active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.Type: GrantFiled: March 6, 2015Date of Patent: October 1, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Michael Thomason
-
Publication number: 20190288125Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalls and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile.Type: ApplicationFiled: March 13, 2018Publication date: September 19, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Jefferson W. HALL
-
Patent number: 10211060Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor layer in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge semiconductor material migrating from the first semiconductor layer during annealing may be deposited over the first layer. The first semiconductor layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with the semiconductor material to form a Schottky barrier structure during the first annealing act.Type: GrantFiled: November 22, 2016Date of Patent: February 19, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Michael Thomason, Mohammed Tanvir Quddus, James Morgan, Mihir Mudholkar, Scott Donaldson, Gordon M. Grivna
-
Patent number: 10177232Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalls and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed between two trenches, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the doped region with the multi-concentration impurity profile.Type: GrantFiled: July 24, 2017Date of Patent: January 8, 2019Assignee: Semiconductor Components Industries, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Mingjiao Liu, Michael Thomason
-
Patent number: 9859449Abstract: A method of forming a semiconductor includes a providing a termination trench and an active trench within a semiconductor layer. The active trench is configured to be at a shallower depth than the termination trench to provide a trench depth difference. The selected trench depth difference in combination with one or more of the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.Type: GrantFiled: June 19, 2017Date of Patent: January 2, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Michael Thomason
-
Publication number: 20170323947Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalls and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile.Type: ApplicationFiled: July 24, 2017Publication date: November 9, 2017Applicant: Semiconductor Components Industries, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Mingjiao Liu, Michael Thomason