Patents by Inventor Mohammed Tanvir Quddus
Mohammed Tanvir Quddus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170288027Abstract: A method of forming a semiconductor includes a providing a termination trench and an active trench within a semiconductor layer. The active trench is configured to be at a shallower depth than the termination trench to provide a trench depth difference. The selected trench depth difference in combination with one or more of the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.Type: ApplicationFiled: June 19, 2017Publication date: October 5, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Michael THOMASON
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Patent number: 9716187Abstract: In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. The active trenches are configured to be at a shallower depth than the termination trench to provide a trench depth difference. The selected trench depth difference in combination with one or more of the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.Type: GrantFiled: March 6, 2015Date of Patent: July 25, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Michael Thomason
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Patent number: 9716151Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalk and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile.Type: GrantFiled: January 21, 2014Date of Patent: July 25, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Mingjiao Liu, Michael Thomason
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Patent number: 9647080Abstract: A Schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary. A Schottky contact is formed in contact with the doped layer.Type: GrantFiled: February 10, 2016Date of Patent: May 9, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Mark Griswold, Ali Salih
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Publication number: 20170076949Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor layer in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge semiconductor material migrating from the first semiconductor layer during annealing may be deposited over the first layer. The first semiconductor layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with the semiconductor material to form a Schottky barrier structure during the first annealing act.Type: ApplicationFiled: November 22, 2016Publication date: March 16, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Michael THOMASON, Mohammed Tanvir QUDDUS, James MORGAN, Mihir MUDHOLKAR, Scott DONALDSON, Gordon M. GRIVNA
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Patent number: 9552993Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge silicon migrating from the first semiconductor epi layer during annealing may be deposited over the first layer. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act.Type: GrantFiled: August 29, 2014Date of Patent: January 24, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Michael Thomason, Mohammed Tanvir Quddus, James Morgan, Mihir Mudholkar, Scott Donaldson, Gordon M Grivna
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Patent number: 9478426Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The layer may include a first metal and a second metal. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act. Thereafter, the stripped first structure may be subjected to a second annealing act.Type: GrantFiled: August 29, 2014Date of Patent: October 25, 2016Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Michael Thomason, Mohammed Tanvir Quddus, James Morgan, Mihir Mudholkar, Scott Donaldson
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Publication number: 20160260844Abstract: In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. The active trenches are configured to be at a shallower depth than the termination trench to provide a trench depth difference. The selected trench depth difference in combination with one or more of the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.Type: ApplicationFiled: March 6, 2015Publication date: September 8, 2016Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Michael THOMASON
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Publication number: 20160260845Abstract: In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. A first active trench is configured to be at a shallower depth than the termination trench to provide a trench depth difference. A second active trench is configured to be at a depth similar to the termination trench. The selected trench depth difference in combination with one or more of the other second active trench depth, the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, first active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.Type: ApplicationFiled: March 6, 2015Publication date: September 8, 2016Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir QUDDUS, Mihir MUDHOLKAR, Michael THOMASON
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Publication number: 20160172458Abstract: A Schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary. A Schottky contact is formed in contact with the doped layer.Type: ApplicationFiled: February 10, 2016Publication date: June 16, 2016Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Mark Griswold, Ali Salih
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Patent number: 9331065Abstract: A diode (200) is disclosed having improved efficiency, smaller form factor, and reduced reverse biased leakage current. Schottky diodes (212) are formed on the sidewalls (210) of a mesa region (206). The mesa region (206) is a cathode of the Schottky diode (212). The current path through the mesa region (206) has a lateral and a vertical current path. The diode (200) further comprises a MOS structure (214), p-type regions (220), MOS structures (230), and p-type regions (232). MOS structure (214) with the p-type regions (220) pinch-off the lateral current path under reverse bias conditions. P-type regions (220), MOS structures (230), and p-type regions (232) each pinch-off the vertical current path under reverse bias conditions. MOS structure (214) and MOS structures (230) reduce resistance of the lateral and vertical current path under forward bias conditions. The mesa region (206) can have a uniform or non-uniform doping concentration.Type: GrantFiled: July 20, 2015Date of Patent: May 3, 2016Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Gordon M. Grivna, Jefferson W. Hall, Mohammed Tanvir Quddus
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Patent number: 9263598Abstract: A Schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary. A Schottky contact is formed in contact with the doped layer.Type: GrantFiled: February 14, 2014Date of Patent: February 16, 2016Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Mark Griswold, Ali Salih
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Publication number: 20150325567Abstract: A diode (200) is disclosed having improved efficiency, smaller form factor, and reduced reverse biased leakage current. Schottky diodes (212) are formed on the sidewalls (210) of a mesa region (206). The mesa region (206) is a cathode of the Schottky diode (212). The current path through the mesa region (206) has a lateral and a vertical current path. The diode (200) further comprises a MOS structure (214), p-type regions (220), MOS structures (230), and p-type regions (232). MOS structure (214) with the p-type regions (220) pinch-off the lateral current path under reverse bias conditions. P-type regions (220), MOS structures (230), and p-type regions (232) each pinch-off the vertical current path under reverse bias conditions. MOS structure (214) and MOS structures (230) reduce resistance of the lateral and vertical current path under forward bias conditions. The mesa region (206) can have a uniform or non-uniform doping concentration.Type: ApplicationFiled: July 20, 2015Publication date: November 12, 2015Applicant: Semiconductor Components Industries, LLCInventors: Gordon M. GRIVNA, Jefferson W. HALL, Mohammed Tanvir QUDDUS
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Publication number: 20150243501Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge silicon migrating from the first semiconductor epi layer during annealing may be deposited over the first layer. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act.Type: ApplicationFiled: August 29, 2014Publication date: August 27, 2015Inventors: Michael Thomason, Mohammed Tanvir Quddus, James Morgan, Mihir Mudholkar, Scott Donaldson, Gordon M Grivna
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Publication number: 20150243557Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The layer may include a first metal and a second metal. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act. Thereafter, the stripped first structure may be subjected to a second annealing act.Type: ApplicationFiled: August 29, 2014Publication date: August 27, 2015Inventors: Michael Thomason, Mohammed Tanvir Quddus, James Morgan, Mihir Mudholkar, Scott Donaldson
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Patent number: 9117936Abstract: A diode (200) is disclosed having improved efficiency, smaller form factor, and reduced reverse biased leakage current. Schottky diodes (212) are formed on the sidewalls (210) of a mesa region (206). The mesa region (206) is a cathode of the Schottky diode (212). The current path through the mesa region (206) has a lateral and a vertical current path. The diode (200) further comprises a MOS structure (214), p-type regions (220), MOS structures (230), and p-type regions (232). MOS structure (214) with the p-type regions (220) pinch-off the lateral current path under reverse bias conditions. P-type regions (220), MOS structures (230), and p-type regions (232) each pinch-off the vertical current path under reverse bias conditions. MOS structure (214) and MOS structures (230) reduce resistance of the lateral and vertical current path under forward bias conditions. The mesa region (206) can have a uniform or non-uniform doping concentration.Type: GrantFiled: July 15, 2014Date of Patent: August 25, 2015Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Gordon M. Grivna, Jefferson W. Hall, Mohammed Tanvir Quddus
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Publication number: 20150236172Abstract: A Schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary. A Schottky contact is formed in contact with the doped layer.Type: ApplicationFiled: February 14, 2014Publication date: August 20, 2015Applicant: Semiconductor Components Industries, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Mark Griswold, Ali Salih
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Patent number: 9000550Abstract: A semiconductor component having a low resistance conduction path and a method for manufacturing the semiconductor component. When the semiconductor component is a Schottky diode, one or more trenches are formed in an epitaxial layer of a first conductivity type that is formed over a semiconductor substrate of the first conductivity type. The trenches may extend into the semiconductor material. Epitaxial semiconductor material of a second conductivity type is selectively grown along the sidewalls of the trenches. An anode contact is formed in contact with the epitaxial layer and the selectively grown epitaxial material and a cathode contact is formed in contact with the semiconductor substrate.Type: GrantFiled: September 8, 2008Date of Patent: April 7, 2015Assignee: Semiconductor Components Industries, LLCInventor: Mohammed Tanvir Quddus
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Publication number: 20150084153Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalk and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile.Type: ApplicationFiled: January 21, 2014Publication date: March 26, 2015Applicant: Semiconductor Components Industries, LLCInventors: Mohammed Tanvir Quddus, Mihir Mudholkar, Mingjiao Liu, Michael Thomason
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Patent number: 8889528Abstract: A semiconductor component having a low resistance conduction path and a method for manufacturing the semiconductor component. When the semiconductor component is a Schottky diode, one or more trenches are formed in an epitaxial layer of a first conductivity type that is formed over a semiconductor substrate of the first conductivity type. The trenches may extend into the semiconductor material. Epitaxial semiconductor material of a second conductivity type is selectively grown along the sidewalls of the trenches. An anode contact is formed in contact with the epitaxial layer and the selectively grown epitaxial material and a cathode contact is formed in contact with the semiconductor substrate.Type: GrantFiled: April 23, 2012Date of Patent: November 18, 2014Assignee: Semiconductor Components Industries, LLCInventor: Mohammed Tanvir Quddus