Abstract: Disclosed is a thermoelectric element capable of being easily fabricated by employing a semiconductor CMOS process, and improving the thermoelectric efficiency by reducing thermal conductivity while improving electric conductivity between a heat absorption part and a heat emission unit. The thermoelectric element according to an exemplary embodiment of the present disclosure includes a common electrode configured to absorb heat; a first electrode and a second electrode formed on an identical plane to a plane of the common electrode and configured to emit heat; an N-leg connected between the common electrode and the first electrode and configured to supply electrons; and a P-leg connected between the common electrode and the second electrode and configured to supply holes, in which a barrier material for suppressing thermal conduction between the common electrode and the first and second electrodes is formed in the N-leg and the P-leg.

Abstract: An apparatus and method for extracting maximum power from a solar cell are provided. The apparatus includes a solar cell for producing power from solar energy, a maximum power extractor for generating a pulse width modulation signal for extracting the maximum power from the solar cell, and a DC-DC converter for adjusting an amount of current generated from the solar cell according to the pulse width modulation signal.

Abstract: Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.

Abstract: A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.

Abstract: Provided is an energy and power management integrated circuit (IC) device. The energy and power management IC device includes a plurality of energy conversion devices for harvesting energy from respective energy conversion sources and converting the energy into electric energy, an energy management IC (EMIC) for converting the electric energy converted by the energy conversion devices into stable energy, a storage device for storing the energy or power converted by the EMIC, a power management IC (PMIC) for receiving and distributing the power stored in the storage device, and a plurality of output load devices for consuming the power distributed by the PMIC. Accordingly, it is possible to harvest energy in an environmentally friendly way and semi-permanently use the energy without changing a battery.

Abstract: A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the sec

Abstract: Disclosed are a thermoelectric device based on silicon nanowires including: a substrate; a silicon heat absorbing part absorbing heat, a silicon nanowire leg transferring heat, and a silicon heat releasing part releasing heat, which are formed on the substrate; and an insulating film with at least one or more holes, which is formed on the substrate including the silicon heat absorbing part, the silicon nanowire leg, and the silicon heat releasing part, and a method for manufacturing the same.

Abstract: Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.

Abstract: A thermoelectric device includes: a substrate; a first nanowire of a first conductive type, which is formed on one side of the substrate; a second nanowire of a second conductive type, which is opposed to the first nanowire; a high temperature part commonly connected to one end of the first nanowire and one end of the second nanowire; low temperature parts connected to the other end of the first nanowire and the other end of the second nanowire, respectively; an insulation layer formed on the first nanowire and the second nanowire; a first metal layer formed on a portion of the insulation layer over the first nanowire, so as to control an electric potential of the first nanowire; and a second metal layer formed on a portion of the insulation layer over the second nanowire, so as to control an electric potential of the second nanowire.

Abstract: Provided are a thermoelectric device, a thermoelectric device module, and a method of forming the thermoelectric device. The thermoelectric device includes a first conductive type first semiconductor nanowire including at least one first barrier region; a second conductive type second semiconductor nanowire including at least one second barrier region; a first electrode connected to one end of the first semiconductor nanowire; a second electrode connected to one end of the second semiconductor nanowire; and a common electrode connected to the other end of the first semiconductor nanowire and the other end of the second semiconductor nanowire. The first barrier region is greater than the first semiconductor nanowire in thermal conductivity, and the second barrier region is greater than the second semiconductor nanowire in thermal conductivity.

Abstract: Disclosed are a hybrid energy harvester and a portable device including the same. The hybrid energy harvester according to an exemplary embodiment of the present disclosure includes: a thermoelectric/piezoelectric element part that includes a thermoelectric element layer generating a voltage by a temperature difference, and a piezoelectric element layer generating a voltage by any one of vibration, pressure and force; an energy source selection part that selects a voltage generated in the thermoelectric element layer or the piezoelectric element layer; and a voltage controlling part that stores the voltage in an energy storage device by controlling the voltage selected in the energy source selection part.

Abstract: A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.

Abstract: A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.

Abstract: A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.

Abstract: In a process for manufacturing a hyperfine semiconductor device, an apparatus for manufacturing a semiconductor device such as a schottky barrier MOSFET and a method for manufacturing the semiconductor device using the same are provided. Two chambers are connected with each other. A cleaning process, a metal layer forming process, and subsequent processes can be performed in situ by using the two chambers, thereby the attachment of the unnecessary impurities and the formation of the oxide can be prevented and the optimization of the process can be accomplished.

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: a single electron box including a first quantum dot, a charge storage gate on the first quantum dot, and a first gate electrode on the charge storage gate, the charge storage gate exchanging charges with the first quantum dot, the first gate electrode adjusting electric potential of the first quantum dot; and a single electron transistor including a second quantum dot below the first quantum dot, a source, a drain, and a second gate electrode below the second quantum dot, the second quantum dot being capacitively coupled to the first quantum dot, the source contacting one side of the second quantum dot, the drain contacting the other side facing the one side, the second gate electrode adjusting electric potential of the second quantum dot.

Abstract: Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.

Abstract: Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.

Abstract: A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.

Abstract: Provided is a thermoelectric array including a plurality of thermoelectric elements arranged in m rows and n columns (each of m and n is an integer equal to or more than 1), each thermoelectric element including a heat absorption layer, a first heat sink layer, a second heat sink layer, a first-conductivity-type leg, and a second-conductivity-type leg formed on the same plane. The heat absorption layers of the thermoelectric elements adjacently disposed in a row or column direction are disposed adjacent to each other, and the first and second heat sink layers of the adjacent thermoelectric elements are disposed adjacent to each other. In this case, thermal interference between adjacent thermoelectric elements may be minimized, thereby obtaining a thermoelectric array having a high figure of merit.