Patents by Inventor Moo-Sup Lim
Moo-Sup Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11658193Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.Type: GrantFiled: November 8, 2021Date of Patent: May 23, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kang Sun Lee, Seung Ho Shin, Hyung Jin Bae, Jin Ho Seo, Ji Hun Shin, Moo Sup Lim, Young Tae Jang, Young Kyun Jeong
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Patent number: 11525922Abstract: An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.Type: GrantFiled: May 31, 2019Date of Patent: December 13, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Young Gu Jin, Young Chan Kim, Tae Sub Jung, Yong Hun Kwon, Sung Young Seo, Moo Sup Lim, Sung Ho Choi
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Patent number: 11456327Abstract: An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.Type: GrantFiled: July 29, 2019Date of Patent: September 27, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young Gu Jin, Young Chan Kim, Yong Hun Kwon, Eung Kyu Lee, Chang Keun Lee, Moo Sup Lim, Tae Sub Jung
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Publication number: 20220285418Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.Type: ApplicationFiled: May 26, 2022Publication date: September 8, 2022Inventors: Ji-Won Lee, Jeong-Jin Cho, Moo-Sup Lim, Sung-Young Seo, Hae-Won Lee
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Publication number: 20220231073Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.Type: ApplicationFiled: April 11, 2022Publication date: July 21, 2022Inventors: JI-WON LEE, Jeong-Jin Cho, Moo-Sup Lim, Sung-Young Seo, Hae-Won Lee
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Patent number: 11302737Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.Type: GrantFiled: February 21, 2020Date of Patent: April 12, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji-Won Lee, Jeong-Jin Cho, Moo-Sup Lim, Sung-Young Seo, Hae-Won Lee
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Publication number: 20220059588Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.Type: ApplicationFiled: November 8, 2021Publication date: February 24, 2022Inventors: Kang Sun LEE, Seung Ho SHIN, Hyung Jin BAE, Jin Ho SEO, Ji Hun SHIN, Moo Sup LIM, Young Tae JANG, Young Kyun JEONG
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Patent number: 11189651Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.Type: GrantFiled: April 6, 2020Date of Patent: November 30, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kang Sun Lee, Seung Ho Shin, Hyung Jin Bae, Jin Ho Seo, Ji Hun Shin, Moo Sup Lim, Young Tae Jang, Young Kyun Jeong
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Publication number: 20210143204Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.Type: ApplicationFiled: January 21, 2021Publication date: May 13, 2021Inventors: JI-WON LEE, JEONG-JIN CHO, MOO-SUP LIM, SUNG-YOUNG SEO, HAE-WON LEE
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Patent number: 10950640Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.Type: GrantFiled: August 26, 2019Date of Patent: March 16, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young Gu Jin, Yong Hun Kwon, Young Chan Kim, Sae Young Kim, Sung Young Seo, Moo Sup Lim, Tae Sub Jung, Sung Ho Choi
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Patent number: 10802144Abstract: A method of measuring the distance to an object by radiating a periodic amplitude-modulated optical signal to the object and detecting the phase difference between the radiated optical signal and a reflected optical signal from the object includes: generating a first photo-detection control signal to control the periodic amplitude-modulation of the radiated optical signal; generating a mask signal activated at least during a shuttering duration for resetting the voltage level at a sensing node; and generating a second photo-detection control signal based on Boolean combination of the first photo-detection signal and the mask signal such that the second photo-detection signal is deactivated or masked at least during the shuttering duration.Type: GrantFiled: October 25, 2016Date of Patent: October 13, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Han-Soo Lee, Hae-Kyung Kong, Kyung-Il Kim, Min-Seok Oh, Tae-Chan Kim, Moo-Sup Lim
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Publication number: 20200286938Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.Type: ApplicationFiled: August 26, 2019Publication date: September 10, 2020Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young Gu JIN, Yong Hun KWON, Young Chan KIM, Sae Young KIM, Sung Young SEO, Moo Sup LIM, Tae Sub JUNG, Sung Ho CHOI
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Publication number: 20200286942Abstract: An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.Type: ApplicationFiled: July 29, 2019Publication date: September 10, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Young Gu JIN, Young Chan Kim, Yong Hun Kwon, Eung Kyu Lee, Chang Keun Lee, Moo Sup Lim, Tae Sub Jung
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Publication number: 20200235152Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.Type: ApplicationFiled: April 6, 2020Publication date: July 23, 2020Inventors: Kang Sun Lee, Seung Ho Shin, Hyung Jin Bae, Jin Ho Seo, Ji Hun Shin, Moo Sup Lim, Young Tae Jang, Young Kyun Jeong
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Patent number: 10714517Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.Type: GrantFiled: December 13, 2018Date of Patent: July 14, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kang Sun Lee, Seung Ho Shin, Hyung Jin Bae, Jin Ho Seo, Ji Hun Shin, Moo Sup Lim, Young Tae Jang, Young Kyun Jeong
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Publication number: 20200194485Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.Type: ApplicationFiled: February 21, 2020Publication date: June 18, 2020Inventors: Ji-Won Lee, Jeong-Jin Cho, Moo-Sup Lim, Sung-Young Seo, Hae-Won Lee
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Publication number: 20200174133Abstract: An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.Type: ApplicationFiled: May 31, 2019Publication date: June 4, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Young Gu JIN, Young Chan Kim, Tae sub Jung, Young Hun Kwon, Sung Young Seo, Moo Sup Lim, Sung Ho Choi
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Patent number: 10608037Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.Type: GrantFiled: December 26, 2017Date of Patent: March 31, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji-Won Lee, Jeong-Jin Cho, Moo-Sup Lim, Sung-Young Seo, Hae-Won Lee
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Unit pixel of image sensor, image sensor including the same and method of manufacturing image sensor
Patent number: 10396119Abstract: Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.Type: GrantFiled: February 26, 2018Date of Patent: August 27, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-Chan Kim, Seung-Sik Kim, Eun-Sub Shim, Moo-Sup Lim -
Publication number: 20190229138Abstract: An image sensor including: a first photodiode; a first circuit including an overflow transistor and a first transfer transistor connected to the first photodiode, a switch element connected to the first transfer transistor and a capacitor disposed between the first transfer transistor and the switch element, wherein the capacitor is a physical capacitor; a second photodiode; and a second circuit including a second transfer transistor connected to the second photodiode, a reset transistor connected to an output of the first circuit and a driving transistor connected to the second transfer transistor and the output of the first circuit.Type: ApplicationFiled: December 13, 2018Publication date: July 25, 2019Inventors: Kang Sun LEE, Seung Ho SHIN, Hyung Jin BAE, Jin Ho SEO, Ji Hun SHIN, Moo Sup LIM, Young Tae JANG, Young Kyun JEONG