Patents by Inventor Morgan Evans

Morgan Evans has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200233125
    Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.
    Type: Application
    Filed: February 9, 2020
    Publication date: July 23, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi, Robert Masci
  • Patent number: 10692872
    Abstract: A memory device may include an active device region, disposed at least partially in a first level. The memory device may include a storage capacitor, disposed at least partially in a second level, above the first level, wherein the first level and the second level are parallel to a substrate plane. The memory device may also include a contact via, the contact via extending between the storage capacitor and the active device region, and defining a non-zero angle of inclination with respect to a perpendicular to the substrate plane.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: June 23, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Sony Varghese, Anthony Renau, Morgan Evans, John Hautala, Joe Olson
  • Patent number: 10690821
    Abstract: Methods of producing gratings with trenches having variable height and width are provided. In one example, a method includes providing an optical grating layer atop a substrate, and providing a patterned hardmask over the optical grating layer. The method may include forming a mask over just a portion of the optical grating layer and the patterned hardmask, and etching a plurality of trenches into the optical grating layer to form an optical grating. After trench formation, at least one of the following grating characteristics varies between one or more trenches of the plurality of trenches: a trench depth and a trench width.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: June 23, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Megan Clark
  • Publication number: 20200190658
    Abstract: Embodiments of the disclosure relate to systems and methods for forming devices on a substrate. For example, a method for forming devices on a substrate can include projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a first surface of a substrate and projecting one or more ion beams from one or more ion beam chambers to form one or more devices on a second surface of a substrate. In these embodiments, the first surface and the second surface are on opposite sides of the substrate. Therefore, the ion beams can form the devices on both sides of the substrate.
    Type: Application
    Filed: December 6, 2019
    Publication date: June 18, 2020
    Inventors: Joseph C. OLSON, Ludovic GODET, Rutger MEYER TIMMERMAN THIJSSEN, Morgan EVANS, Jinxin FU
  • Publication number: 20200189036
    Abstract: Embodiments of the present disclosure relate to methods for controlling etch depth by providing localized heating across a substrate. The method for controlling temperatures across the substrate can include individually controlling a plurality of heating pixels disposed in a dielectric body of a substrate support assembly. The plurality of heating pixels provide temperature distributions on a first surface of the substrate disposed on a support surface of the dielectric body. The temperature distributions correspond to a plurality of portions of at least one grating on a second surface of the substrate to be exposed to an ion beam. Additionally, the temperatures can be controlled by individually controlling light emitting diodes (LEDs) of LED arrays. The substrate is exposed to the ion beam to form a plurality of fins on the at least one grating. The at least one grating has a distribution of depths corresponding to the temperature distributions.
    Type: Application
    Filed: November 25, 2019
    Publication date: June 18, 2020
    Inventors: Morgan EVANS, Joseph C. OLSON
  • Publication number: 20200192010
    Abstract: Embodiments of the disclosure generally relate to methods of forming gratings. The method includes depositing a resist material on a grating material disposed over a substrate, patterning the resist material into a resist layer, projecting a first ion beam to the first device area to form a first plurality of gratings, and projecting a second ion beam to the second device area to form a second plurality of gratings. Using a patterned resist layer allows for projecting an ion beam over a large area, which is often easier than focusing the ion beam in a specific area.
    Type: Application
    Filed: December 16, 2019
    Publication date: June 18, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Joseph C. OLSON, Ludovic GODET, Rutger MEYER TIMMERMAN THIJSSEN, Morgan EVANS, Jinxin FU
  • Publication number: 20200192009
    Abstract: Methods of producing gratings with trenches having variable height and width are provided. In one example, a method includes providing an optical grating layer atop a substrate, and providing a patterned hardmask over the optical grating layer. The method may include forming a mask over just a portion of the optical grating layer and the patterned hardmask, and etching a plurality of trenches into the optical grating layer to form an optical grating. After trench formation, at least one of the following grating characteristics varies between one or more trenches of the plurality of trenches: a trench depth and a trench width.
    Type: Application
    Filed: March 11, 2019
    Publication date: June 18, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Megan Clark
  • Publication number: 20200192031
    Abstract: Embodiments of the present application generally relate to methods for forming a plurality of gratings. The methods generally include depositing a material over one or more protected regions of a waveguide combiner disposed on a substrate, the material having a thickness inhibiting removal of a grating material disposed on the waveguide combiner when an ion beam is directed toward the substrate, and directing the ion beam toward the substrate. The methods disclosed herein allow for formation of a plurality of gratings in one or more unprotected regions, while no gratings are formed in the protected regions.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 18, 2020
    Inventors: Morgan EVANS, Joseph C. OLSON, Rutger MEYER TIMMERMAN THIJSSEN
  • Publication number: 20200194215
    Abstract: Embodiments herein provide systems and methods for multi-area selecting etching. In some embodiments, a system may include a plasma source delivering a plurality of angled ion beams to a substrate, the substrate including a plurality of devices. Each of the plurality of devices may include a first angled grating and a second angled grating. The system may further include a plurality of blocking masks positionable between the plasma source and the substrate. A first blocking mask of the plurality of blocking masks may include a first set of openings permitting the angled ion beams to pass therethrough to form the first angled gratings of each of the plurality of devices. A second blocking mask of the plurality of blocking masks may include a second set of openings permitting the angled ion beams to pass therethrough to form the second angled gratings of each of the plurality of devices.
    Type: Application
    Filed: March 1, 2019
    Publication date: June 18, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen
  • Publication number: 20200194226
    Abstract: A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.
    Type: Application
    Filed: August 8, 2019
    Publication date: June 18, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Peter F. Kurunczi, Morgan Evans, Joseph C. Olson, Christopher A. Rowland, James Buonodono
  • Publication number: 20200194227
    Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ? relative to a surface normal of the substrates and form gratings in the grating material.
    Type: Application
    Filed: December 5, 2019
    Publication date: June 18, 2020
    Inventors: Joseph C. OLSON, Morgan EVANS, Rutger MEYER TIMMERMAN THIJSSEN
  • Publication number: 20200194228
    Abstract: Embodiments described herein relate to methods and apparatus for forming gratings having a plurality of fins with different slant angles on a substrate and forming fins with different slant angles on successive substrates using angled etch systems and/or an optical device. The methods include positioning portions of substrates retained on a platen in a path of an ion beam. The substrates have a grating material disposed thereon. The ion beam is configured to contact the grating material at an ion beam angle ? relative to a surface normal of the substrates and form gratings in the grating material.
    Type: Application
    Filed: December 5, 2019
    Publication date: June 18, 2020
    Inventors: Joseph C. OLSON, Morgan EVANS, Rutger MEYER TIMMERMAN THIJSSEN
  • Publication number: 20200185228
    Abstract: A method of forming a three-dimensional transistor device. The method may include providing a fin array on a substrate, the fin array comprising a plurality of fin structures, formed from a monocrystalline semiconductor, and disposed subjacent to a hard mask layer. The method may include directing angled ions at the fin array, wherein the angled ions form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The angled ions may etch the plurality of fin structures to form a stack of isolated nanowires, within a given fin structure.
    Type: Application
    Filed: February 18, 2020
    Publication date: June 11, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Min Gyu Sung, Sony Varghese, Anthony Renau, Morgan Evans, Joseph C. Olson
  • Publication number: 20200185201
    Abstract: A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.
    Type: Application
    Filed: November 13, 2019
    Publication date: June 11, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Peter F. Kurunczi, Morgan Evans, Joseph C. Olson
  • Publication number: 20200172973
    Abstract: The invention relates to PCR-based clonality studies for among others early diagnosis of lymphoproliferative disorders. Provided is a set of nucleic acid amplification primers comprising a forward primer, or a variant thereof, and a reverse primer, or a variant thereof, capable of amplifying a rearrangement selected from the group consisting of a VH-JH IGH rearrangement, a DH-JH IGH rearrangement, a VK-JK IGK rearrangement, a VK/intron-Kde IGK rearrangement, a V?-J? IGL rearrangement, a V?-J? TCRB rearrangement, a D?-J? TCRB rearrangement, a V?-J? TCRG rearrangement, a V?-J? TCRD rearrangement, a D?-D? TCRD rearrangement, a D?-J? TCRD rearrangement, a V?-D? TCRD rearrangement, or a translocation selected from t(11;14)(BCL1-IGH) and t(14;18)(BCL2-IGH). The primers can be used in PCR-based clonality studies for early diagnosis of lymphoproliferative disorders and detection of minimal residual disease (MRD). Also provided is a kit comprising at least one set of primers of the invention.
    Type: Application
    Filed: May 6, 2019
    Publication date: June 4, 2020
    Inventors: Jacobus Johannes Maria van Dongen, Anthonie Willem Langerak, Eduardus Maria Dominicus Schuuring, Jesus Fernando San Miguel, Ramon Garcia Sanz, Antonio Parreira, John Lewis Smith, Frances Louise Lavender, Gareth John Morgan, Paul Anthony Stuart Evans, Michael Kneba, Michael Hummel, Elizabeth Anne Macintyre, Christian Bastard, Monika Br├╝ggemann, Frederic Bernard Louis Davi
  • Publication number: 20200166681
    Abstract: Embodiments herein provide systems and methods for forming an optical component. A method may include providing a plurality of proximity masks between a plasma source and a workpiece, the workpiece including a plurality of substrates secured thereto. Each of the plurality of substrates may include first and second target areas. The method may further include delivering, from the plasma source, an angled ion beam towards the workpiece, wherein the angled ion beam is then received at one of the plurality of masks. A first proximity mask may include a first set of openings permitting the angled ion beam to pass therethrough to just the first target area of each of the plurality of substrates. A second proximity mask may include a second set of openings permitting the angled ion beam to pass therethrough just to the second target area of each of the plurality of substrates.
    Type: Application
    Filed: January 31, 2020
    Publication date: May 28, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen, Joseph Olson, Peter Kurunczi, Robert Masci
  • Publication number: 20200158495
    Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optical grating layer, and forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled trenches disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the optical grating layer. The method may further include delivering light from a light source into the optical grating layer, and measuring at least one of: an undiffracted portion of the light exiting the optical grating layer, and a diffracted portion of the light exiting the optical grating layer.
    Type: Application
    Filed: January 4, 2019
    Publication date: May 21, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Joseph C. Olson, Ludovic Godet, Rutger Meyer Timmerman Thijssen, Morgan Evans
  • Publication number: 20200144109
    Abstract: Systems and methods discussed herein can be used to form gratings at various slant angles across a grating material on a single substrate by determining an ion beam angle and changing the angle of an ion beam among and between ion beam angles to form gratings with varying angles and cross-sectional geometries. The substrate can be rotated around a central axis, and one or more process parameters, such as a duty cycle of the ion beam, can be modulated to form a grating with a depth gradient.
    Type: Application
    Filed: October 18, 2019
    Publication date: May 7, 2020
    Inventors: Rutger MEYER TIMMERMAN THIJSSEN, Joseph C. OLSON, Morgan EVANS
  • Publication number: 20200124865
    Abstract: A method of forming an optical grating component. The method may include providing a substrate, the substrate comprising an underlayer and a hard mask layer, disposed on the underlayer. The method may include patterning the hard mask layer to define a grating field and etching the underlayer within the grating field to define a variable height of the underlayer along a first direction, the first direction being parallel to a plane of the substrate. The method may include forming an optical grating within the grating field using an angled ion etch, the optical grating comprising a plurality of angled structures, disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate, wherein the plurality of angled structures define a variable depth along the first direction, based upon the variable height of the underlayer.
    Type: Application
    Filed: October 23, 2018
    Publication date: April 23, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: RUTGER MEYER TIMMERMAN THIJSSEN, LUDOVIC GODET, MORGAN EVANS, JOSEPH C. OLSON
  • Publication number: 20200117080
    Abstract: A method of forming angled structures in a substrate. The method may include the operation of forming a mask by etching angled mask features in a mask layer, disposed on a substrate base of the substrate, the angled mask features having sidewalls, oriented at a non-zero angle of inclination with respect to perpendicular to a main surface of the substrate. The method may include etching the substrate with the mask in place, the etching comprising directing ions having trajectories arranged at a non-zero angle of incidence with respect to a perpendicular to the main surface.
    Type: Application
    Filed: October 12, 2018
    Publication date: April 16, 2020
    Applicant: APPLIED Materials, Inc.
    Inventors: Morgan Evans, Joseph C. Olson, Rutger Mayer Timmerman Thijssen