Abstract: In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III-V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

Abstract: A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.

Abstract: Provided is a method of manufacturing a semiconductor device, which is adapted to prevent the deposition of a material on a laser light emitting edge, thereby enabling an improvement in longevity characteristics of a laser. A base having a laser chip mounted thereon is irradiated with an energy beam having a shorter wavelength than an oscillation wavelength of the laser chip. Photolysis and oxidation caused by the energy beam cause the removal of an adherent from the overall base or the deterioration thereof, and incidentally, the adherent is derived from an adhesive sheet used to attach the laser chip to the base, or the like. Preferably, laser light or ultraviolet light, for example, is used as the energy beam. Alternatively, the base having the laser chip mounted thereon may be irradiated with plasma so as to remove the adherent utilizing an ion cleaning effect of the plasma. After irradiation, a top is mounted to the base so as to shut off the laser chip from the outside.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030° C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070° C. to form a high temperature growing part between the low temperature growing parts in the second stage.

Abstract: A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.

Abstract: In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.

Abstract: A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.

Abstract: When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x≦0.011 and x≧450 &mgr;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H≦70×10−4 (cm), and Z=y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos−1(1-HCZ), where C (cm−1) is the proportionality constant when the radius of curvature of the substrate &rgr; (cm) is expressed as 1/&rgr;=CZ.

Abstract: A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.

Abstract: A nitride based III-V compound semiconductor doped with a p-type impurity is formed on a substrate made from sapphire. The substrate is then placed between a pair of RF electrodes, and a radio frequency field is applied between the RF electrodes. With this operation, electrons present in the compound semiconductor attack the bonding between the p-type impurity and hydrogen, to cut the bonding. The hydrogen atoms thus dissociated are released from the compound semiconductor, to thereby activate the p-type impurity. In this case, it is not required to heat the compound semiconductor by a heater or the like.

Abstract: Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a semiconductor device manufactured by the use of the nitride semiconductor. A seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween. Then, a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer. In a first step, a low temperature growth portion having a trapezoidal-shaped cross section in a layer thickness direction is formed at a growth temperature of 1030° C., and in a second step, lateral growth predominantly takes place at a growth temperature of 1070° C. Then, a high temperature growth potion is formed between the low temperature growth portions.

Abstract: To provide a semiconductor device capable of preventing the bowing of the substrate, and having a semiconductor layer of a III-V group compound of a nitride system with excellent crystallinity. The semiconductor layer of the III-V group compound of the nitride system whose thickness is equal to or less than 8 &mgr;m, is provided onto a substrate made of sapphire. This reduces the bowing of the substrate due to differences in a thermal expansion coefficient and a lattice constant between the substrate and the semiconductor layer of the III-V group compound of the nitride system. An n-side contact layer forming the semiconductor layer of the III-V group of the nitride system has partially a lateral growth region made by growing in a lateral direction from a crystalline part of a seed crystal layer. In the lateral growth region, dislocation density restricts low, therefore, regions corresponding to the lateral growth region of each layer formed onto the n-side contact layer has excellent crystallinity.

Abstract: A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less.

Abstract: A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.

Abstract: A nitride based III-V compound semiconductor doped with a p-type impurity is formed on a substrate made from sapphire. The substrate is then placed between a pair of RF electrodes, and a radio frequency field is applied between the RF electrodes. With this operation, electrons present in the compound semiconductor attack the bonding between the p-type impurity and hydrogen, to cut the bonding. The hydrogen atoms thus dissociated are released from the compound semiconductor, to thereby activate the p-type impurity. In this case, it is not required to heat the compound semiconductor by a heater or the like.

Abstract: To provide a semiconductor device capable of preventing the bowing of the substrate, and having a semiconductor layer of a III-V group compound of a nitride system with excellent crystallinity.

Abstract: To provide a semiconductor device capable of enhancing crystallinity of a semiconductor of a III-V group compound of a nitride system formed on a sapphire substrate and to provide a method of manufacturing the same.