Abstract: A method is described that induced dielectric breakdown within a capacitor's dielectric material while driving a current through the capacitor. The current is specific to data that is being written into the capacitor. The method also involves reading the data by interpreting behavior of the capacitor that is determined by the capacitor's resistance, where, the capacitor's resistance is a consequence of the inducing and the driving.

Abstract: Embodiments of the present invention provide a bus architecture utilizing multiple-pumped serial links, and a combination of encoding and serialization to two data streams to transmit and receive a serialized data stream over a bus. The order in which encoding and serialization takes place depends upon the anticipated activity factors of the two data streams, and is chosen to reduce average energy dissipation. Other embodiments are described and claimed.

Abstract: A method and apparatus for reducing power consumption in integrated memory devices is provided. Banks of memory cells may be individually put into “sleep” mode via respective “sleep” transistors.

Abstract: A cell in an information storage cell array is written, by asserting a signal on a bit line that is coupled to the cell and to a group of other cells in the array, to a first voltage. The cell is read by asserting a signal on a word line that is coupled to the cell and to another group of cells in the array, in a direction of, but without reaching, the first voltage. Other embodiments are also described and claimed.

Abstract: A one-time programmable (OTP) cell includes an access transistor coupled to an antifuse transistor. Access transistor has a gate oxide thickness that is greater than the gate oxide thickness of the antifuse transistor so that if the antifuse transistor is programmed, the voltage felt across the gate/drain junction of the access transistor is insufficient to cause the gate oxide of the access transistor to break down. The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously.

Abstract: A manufacturing process modification is disclosed for producing a metal-insulator-metal (MIM) capacitor. The MIM capacitor may be used in memory cells, such as DRAMs, and may also be integrated into logic processing, such as for microprocessors. The processing used to generate the MIM capacitor is adaptable to current logic processing techniques. Other embodiments are described and claimed.

Abstract: A system includes a pull-up circuit to program a memory cell. The pull-up circuit may include a level shifter to receive a control signal, a supply voltage, and one or more of a plurality of rail voltages, each of the plurality of rail voltages substantially equal to a respective integer multiple of the supply voltage, and to generate a second control signal, and a cascode stage. The cascode stage may include a plurality of transistors, a gate voltage of each of the plurality of transistors to be controlled at least in part by a respective one of the second control signal, the supply voltage, and at least one of the plurality of rail voltages, and an output node to provide a cell programming signal.

Abstract: A method and apparatus for performing majority voting is presented. The method selects pairs of inputs, performs AND and NOR operations on each pair of inputs to determine that each pair of inputs is both high or both low, yielding a quantity of “both high” pairs and a quantity of “both low” pairs, and compares the quantity of “both high” pairs against the quantity of “both low” pairs to determine the majority. The apparatus includes AND gates configured to receive pairs of values and NOR gates configured to receive the same pairs of values, with a connections between all AND gates and connections between all NOR gates. A summation element sums all AND gate outputs and all NOR gate outputs to determine the majority.

Abstract: For one disclosed embodiment, an apparatus comprises a first p-type device coupled between a cell voltage node and a storage node, an n-type device coupled between the storage node and a reference voltage node, and a second p-type device to couple the storage node to a bit line in response to a signal on a select line. At least one side of diffusion regions in a substrate to form both the first p-type device and the second p-type device are substantially aligned. Other embodiments are also disclosed.

Abstract: In general, in one aspect, the disclosure describes a memory array including a plurality of memory cells arranged in rows and columns. Each memory cell includes a transistor having a floating body capable of storing a charge. A plurality of word lines and purge lines are interconnected to rows of memory cells. A plurality of bit lines are interconnected to columns of memory cells. Driving signals provided via the word lines, the purge lines, and the bit lines can cooperate to alter the charge of the floating body region in one or more of the memory cells.

Abstract: A method is described that comprises modulating the power consumption of an SRAM as a function of its usage at least by reaching, with help of a transistor, a voltage on a node within an operational amplifier's feedback loop. The voltage is beyond another voltage that the operational amplifier would drive the node to be without the help of the transistor. The voltage helps the feedback loop establish a voltage drop across a cell within the SRAM.

Abstract: A multi-ported register comprises a Global Bit Line (GBL) to couple a gate to a data output line via an output transistor. A Local bit Line (LBL) couples the gate to a first register file cell and a second register file cell, said second register file cell disposed closer to the data output line than the first register file cell. At least one transistor in the first register file cell having a stronger drive current than the at least one transistor in the second register file cell. At least one of, the output transistor, the gate, and the first register file cell of a first bank have a stronger drive current than the corresponding output transistor, the gate and the first register file cell of a second bank said second bank being closer to the data output line.

Abstract: An interconnect architecture is provided to reduce power consumption. A first driver may drive signals on a first interconnect and a second driver may drive signals on a second interconnect. The first driver may be powered by a first voltage and the second driver may be powered by a second voltage different than the first voltage.

Abstract: Apparatus and systems, as well as methods and articles, may operate to provide a majority voter indication using a sense amplifier coupled to a first plurality of bit inputs and to a second plurality of bit inputs.

Abstract: A method of programming a memory array is provided, including accessing a plurality of word lines of the memory array by providing a plurality of voltage steps sequentially after one another to the respective word lines, and accessing a plurality of bit lines of the memory array each time that a respective word line is accessed, to program a plurality of devices corresponding to individual word and bit lines that are simultaneously accessed, each device being programmed by breaking a dielectric layer of the device, accessing of the bit lines being sequenced such that only a single one of the devices is programmed at a time.

Abstract: A two-transistor DRAM cell includes an NMOS device and a PMOS device coupled to the NMOS device.

Abstract: A two transistor memory cell includes a write transistor and a read transistor. When reading the memory cell, the read transistor is turned on, and a voltage develops on a read bit line.

Abstract: Crosspoint memory arrays utilizing one time programmable antifuse cells are disclosed.

Abstract: Different embodiments of a one-time-programmable antifuse cell included. In one embodiment, a circuit is provided that includes an antifuse element, a high voltage device, and a sense circuit. The antifuse element has a voltage supply terminal to be at a sense voltage during sensing/reading and a higher programming voltage during programming. The sense circuit is configured to enable programming the antifuse element during programming and to sense the state of the antifuse element during sensing. The high voltage device is coupled between the antifuse element and the sense circuit to couple the antifuse element to the sense circuit during programming and sensing and to protectively shield the sense circuit from the higher programming voltage during programming.

Abstract: A transistor may have degraded characteristics because of an overvoltage condition. The degraded characteristics may be sensed to determine that the transistor has previously been subjected to an overvoltage condition.