Patents by Inventor Mujahid Muhammad
Mujahid Muhammad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10147822Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: GrantFiled: March 30, 2017Date of Patent: December 4, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John B. Campi, Jr., Robert J. Gauthier, Jr., Rahul Mishra, Souvick Mitra, Mujahid Muhammad
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Publication number: 20180337284Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: July 13, 2018Publication date: November 22, 2018Inventors: John B. Campi, JR., Robert J. Gauthier, JR., Rahul Mishra, Souvick Mitra, Mujahid Muhammad
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Publication number: 20180331226Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: July 12, 2018Publication date: November 15, 2018Inventors: John B. CAMPI, JR., Robert J. GAUTHIER, JR., Rahul MISHRA, Souvick MITRA, Mujahid MUHAMMAD
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Patent number: 10090400Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: GrantFiled: February 24, 2017Date of Patent: October 2, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John B. Campi, Jr., Robert J. Gauthier, Jr., Rahul Mishra, Souvick Mitra, Mujahid Muhammad
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Patent number: 10090301Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: GrantFiled: February 24, 2017Date of Patent: October 2, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John B. Campi, Jr., Robert J. Gauthier, Jr., Rahul Mishra, Souvick Mitra, Mujahid Muhammad
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Publication number: 20180190644Abstract: Silicon-controlled rectifiers, electrostatic discharge circuits, and methods of fabricating a silicon-controlled rectifier for use in an electrostatic discharge circuit. A device structure for the silicon controlled rectifier includes a first well of a first conductivity type in a semiconductor layer, a second well of a second conductivity type in the semiconductor layer, a cathode coupled with the first well, and an anode coupled with the second well. First and second body contacts are coupled with the first well, and the first and second body contacts each have the first conductivity type. A triggering device may be coupled with the first body contact.Type: ApplicationFiled: January 5, 2017Publication date: July 5, 2018Inventors: You Li, Manjunatha Prabu, Mujahid Muhammad, John B. Campi, Jr., Robert J. Gauthier, Jr., Souvick Mitra
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Publication number: 20180166577Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: February 7, 2018Publication date: June 14, 2018Inventors: John B. CAMPI, JR., Robert J. GAUTHIER, JR., Rahul MISHRA, Souvick MITRA, Mujahid MUHAMMAD
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Patent number: 9978874Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: GrantFiled: January 10, 2017Date of Patent: May 22, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John B. Campi, Jr., Robert J. Gauthier, Jr., Rahul Mishra, Souvick Mitra, Mujahid Muhammad
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Patent number: 9923096Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: GrantFiled: March 30, 2017Date of Patent: March 20, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John B. Campi, Jr., Robert J. Gauthier, Jr., Rahul Mishra, Souvick Mitra, Mujahid Muhammad
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Publication number: 20180076328Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: November 21, 2017Publication date: March 15, 2018Inventors: John B. CAMPI, JR., Robert J. GAUTHIER, JR., Rahul MISHRA, Souvick MITRA, Mujahid MUHAMMAD
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Publication number: 20180076329Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: November 21, 2017Publication date: March 15, 2018Inventors: John B. CAMPI, JR., Robert J. GAUTHIER, JR., Rahul MISHRA, Souvick MITRA, Mujahid MUHAMMAD
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Patent number: 9911852Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: GrantFiled: June 2, 2016Date of Patent: March 6, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John B. Campi, Jr., Robert J. Gauthier, Jr., Rahul Mishra, Souvick Mitra, Mujahid Muhammad
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Publication number: 20180047509Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: October 4, 2017Publication date: February 15, 2018Inventors: John B. CAMPI, JR., Robert J. GAUTHIER, JR., Rahul MISHRA, Souvick MITRA, Mujahid MUHAMMAD
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Patent number: 9818542Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: GrantFiled: October 14, 2015Date of Patent: November 14, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John B. Campi, Jr., Robert J. Gauthier, Jr., Rahul Mishra, Souvick Mitra, Mujahid Muhammad
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Publication number: 20170207341Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: March 30, 2017Publication date: July 20, 2017Inventors: John B. CAMPI, Jr., Robert J. GAUTHIER, Jr., Rahul MISHRA, Souvick MITRA, Mujahid MUHAMMAD
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Publication number: 20170207340Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: March 30, 2017Publication date: July 20, 2017Inventors: John B. CAMPI, JR., Robert J. GAUTHIER, JR., Rahul MISHRA, Souvick MITRA, Mujahid MUHAMMAD
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Publication number: 20170207333Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: March 30, 2017Publication date: July 20, 2017Inventors: John B. CAMPI, Jr., Robert J. GAUTHIER, Jr., Rahul MISHRA, Souvick MITRA, Mujahid MUHAMMAD
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Publication number: 20170162673Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: February 24, 2017Publication date: June 8, 2017Inventors: John B. CAMPI, JR., Robert J. GAUTHIER, JR., Rahul MISHRA, Souvick MITRA, Mujahid MUHAMMAD
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Publication number: 20170162569Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: February 24, 2017Publication date: June 8, 2017Inventors: John B. CAMPI, JR., Robert J. GAUTHIER, JR., Rahul MISHRA, Souvick MITRA, Mujahid MUHAMMAD
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Publication number: 20170125598Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.Type: ApplicationFiled: January 10, 2017Publication date: May 4, 2017Inventors: John B. CAMPI, JR., Robert J. GAUTHIER, JR., Rahul MISHRA, Souvick MITRA, Mujahid MUHAMMAD