Abstract: Provided is a light emitting device including a first electrode, a second electrode facing the first electrode, and an emission layer between the first electrode and the second electrode, wherein the emission layer includes a first compound represented by Formula 1 below.

Abstract: Embodiments provide light emitting element which includes a first electrode, a second electrode disposed on the first electrode, and an emission layer disposed between the first electrode and the second electrode, wherein the emission layer includes a polycyclic compound represented by Formula 1, which is explained in the specification:

Abstract: A light emitting device includes a first electrode, a second electrode, and at least one emission layer between the first electrode and the second electrode and includes at least one polycyclic compound represented by Formula 1 below, thereby exhibiting long service life characteristics. In Formula 1, the substituents are the same as defined in the detailed description.

Abstract: The present invention relates to a method of improving the corrosion resistance of a metal substrate surface using an oxygen reduction catalyst, which may improve the corrosion resistance of the metal substrate surface by coating the metal substrate surface with the oxygen reduction catalyst so that the metal substrate surface is changed to a passive state through the action of the oxygen reduction catalyst in an environment in which a stable oxide layer is not spontaneously formed on the metal substrate surface. The present invention has an advantage in that it can dramatically improve the corrosion resistance of the metal substrate under a corrosive environment by allowing a recoverable oxide layer to be formed on the metal substrate surface through the action of the oxygen reduction catalyst, applied to the surface, even in an environment in which an oxide layer is not spontaneously formed on the metal substrate.

Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.

Abstract: Disclosed is a composition for forming a thermoelectric film, the composition comprising an edge-oxidized graphene oxide, wherein the edge-oxidized graphene oxide is dispersed in a thermoelectric material.

Abstract: The present invention relates to a method of improving the corrosion resistance of a metal substrate surface using an oxygen reduction catalyst, which may improve the corrosion resistance of the metal substrate surface by coating the metal substrate surface with the oxygen reduction catalyst so that the metal substrate surface is changed to a passive state through the action of the oxygen reduction catalyst in an environment in which a stable oxide layer is not spontaneously formed on the metal substrate surface. The present invention has an advantage in that it can dramatically improve the corrosion resistance of the metal substrate under a corrosive environment by allowing a recoverable oxide layer to be formed on the metal substrate surface through the action of the oxygen reduction catalyst, applied to the surface, even in an environment in which an oxide layer is not spontaneously formed on the metal substrate.

Abstract: The present invention relates to a high-entropy alloy especially having excellent low-temperature tensile strength and elongation by means of having configured, through thermodynamic calculations, an alloy composition region having an FCC single-phase microstructure at 700° C. or higher, and enabling the FCC single-phase microstructure at room temperature and at an ultra-low temperature. The high-entropy alloy, according to the present invention, comprises: Co: 3-12 at %; Cr: 3-18 at %; Fe: 3-50 at %; Mn: 3-20 at %; Ni: 17-45 at %; V: 3-12 at %; and unavoidable impurities, wherein the ratio of the V content to the Ni content (V/Ni) is 0.5 or less, and the sum of the V content and the Co content is 22 at % or less.

Abstract: This disclosure relates to a composition for catalyst-free electroless plating and a method for catalyst-free electroless plating using the same. More particularly, this disclosure relates to a composition for catalyst-free electroless plating and a method for catalyst-free electroless plating using the same that does not require a catalyst such as an expensive noble metal catalyst and may simplify the process.

Abstract: A vacuum cleaner is provided. The vacuum cleaner includes a motor configured to rotate at a speed of predetermined revolutions per minute (RPM) in a normal mode, a first switch configured to control a power on/off operation of the vacuum cleaner, a second switch configured to change an operation mode of the vacuum cleaner, a battery unit including a first processor configured to, based on the first switch being pressed, control a power of the vacuum cleaner to be turned on, and a second processor configured to, based on the power of the vacuum cleaner being turned on according to an operation of the first switch, control the vacuum cleaner to operate in the normal mode, and according to an operation of the second switch in the normal mode, control the vacuum cleaner to operate in a standby mode where power supplied to the motor is turned off.

Abstract: The present invention relates to a high-entropy alloy especially having excellent low-temperature tensile strength and elongation by means of having configured, through thermodynamic calculations, an alloy composition region having an FCC single-phase microstructure at 700° C. or higher, and enabling the FCC single-phase microstructure at room temperature and at an ultra-low temperature. The high-entropy alloy, according to the present invention, comprises: Cr: 3-18 at %; Fe: 3-60 at %; Mn: 3-40 at% ; Ni: 20-80 at %: 3-12 at %; and unavoidable impurities, wherein the ratio of the V content to the Ni content (V/Ni) is 0.5 or less.

Abstract: The present invention relates to a method for touch control in a mobile real-time simulation game. Particularly, the present invention relates to a touch control method which can provide a function selected among predetermined functions according to the interval from when a touch has been input to when the next touch is input and the pattern type of input touch. A method for touch control in a simulation game performed using multiple units according to one aspect of the present invention may comprises: a first step for displaying the simulation game through a display unit; a second step for inputting a touch having a first pattern on at least a partial area of the display unit; a third step for inputting a touch having a predetermined function, using the interval between when the touch having the first pattern is input and when the touch having the second pattern is input and the pattern type of the input touch having the first pattern and the input touch having the second pattern.

Abstract: Disclosed is a composition for forming a thermoelectric film, the composition comprising an edge-oxidized graphene oxide, wherein the edge-oxidized graphene oxide is dispersed in a thermoelectric material.

Abstract: This disclosure relates to a composition for catalyst-free electroless plating and a method for catalyst-free electroless plating using the same. More particularly, this disclosure relates to a composition for catalyst-free electroless plating and a method for catalyst-free electroless plating using the same that does not require a catalyst such as an expensive noble metal catalyst and may simplify the process.

Abstract: Disclosed herein are a cleaner and a control method thereof. The control method of the cleaner includes: supplying predetermined rearrangement power to a motor for a predetermined time period; detecting a position of a rotor using a hall sensor; and supplying start-up power according to the detected position of the rotor.

Abstract: The present invention relates to a method for touch control in a mobile real-time simulation game. Particularly, the present invention relates to a touch control method which can provide a function selected among predetermined functions according to the interval from when a touch has been input to when the next touch is input and the pattern type of input touch. A method for touch control in a simulation game performed using multiple units according to one aspect of the present invention may comprises: a first step for displaying the simulation game through a display unit; a second step for inputting a touch having a first pattern on at least a partial area of the display unit; a third step for inputting a touch having a predetermined function, using the interval between when the touch having the first pattern is input and when the touch having the second pattern is input and the pattern type of the input touch having the first pattern and the input touch having the second pattern.

Abstract: The present invention relates to a high-entropy alloy especially having excellent low-temperature tensile strength and elongation by means of having configured, through thermodynamic calculations, an alloy composition region having an FCC single-phase microstructure at 700° C. or higher, and enabling the FCC single-phase microstructure at room temperature and at an ultra-low temperature. The high-entropy alloy, according to the present invention, comprises: Co: 3-12 at %; Cr: 3-18 at %; Fe: 3-50 at %; Mn: 3-20 at %; Ni: 17-45 at %; V: 3-12 at %; and unavoidable impurities, wherein the ratio of the V content to the Ni content (V/Ni) is 0.5 or less, and the sum of the V content and the Co content is 22 at % or less.

Abstract: A vacuum cleaner is provided. The vacuum cleaner includes a motor configured to rotate at a speed of predetermined revolutions per minute (RPM) in a normal mode, a first switch configured to control a power on/off operation of the vacuum cleaner, a second switch configured to change an operation mode of the vacuum cleaner, a battery unit including a first processor configured to, based on the first switch being pressed, control a power of the vacuum cleaner to be turned on, and a second processor configured to, based on the power of the vacuum cleaner being turned on according to an operation of the first switch, control the vacuum cleaner to operate in the normal mode, and according to an operation of the second switch in the normal mode, control the vacuum cleaner to operate in a standby mode where power supplied to the motor is turned off.

Abstract: A method of forming a stop layer to prevent dummy vias from connecting to a metal layer and the resulting device are provided. Embodiments include forming a first metal layer in a first dielectric layer; forming a second dielectric layer over a first Nblok layer formed over the first dielectric and first metal layers; forming a third dielectric layer over the second dielectric layer and a second Nblok layer formed over a portion of the second dielectric layer; forming a via and a plurality of vias through the third and second dielectric layers down to the second and first Nblok layers, respectively; removing portions of the second and first Nblok layers through the via and the plurality of vias down to the second dielectric layer and the first metal layer, respectively; removing portions of the third dielectric layer through each via; and filling each via with a second metal layer.

Abstract: Device and method for forming a device are disclosed. The method includes providing a substrate prepared with a memory cell region. At least first and second memory cells are formed on the memory cell region. Each of the memory cells is formed by forming a split gate having first and second gates. The first gate is a storage gate having a control gate over a floating gate and the second gate is a wordline. Re-oxidized layers which extend from top to bottom of the control gate are formed on sidewalls of the control gate. First source/drain (S/D) region is formed adjacent to the second gate and second S/D region is formed adjacent to the first gate. The first and second gates are coupled in series and the second S/D region is a common S/D region for adjacent first and second memory cells. An erase gate is formed over the common S/D region.