Abstract: Provided is an image processing system capable of estimating a three-dimensional shape of a semiconductor pattern or a particle by solving problems of measurement reduction in a height direction and taking an enormous amount of time at a time of acquiring learning data. The image processing system according to the disclosure stores a detectable range of a detector provided in a charged particle beam device in a storage device in advance, generates a simulated image of a three-dimensional shape pattern using the detectable range, and learns a relationship between the simulated image and the three-dimensional shape pattern in advance.

Abstract: Provided is a charged particle beam device that can impart a function of an energy filter to even a small BSE detector. The charged particle beam device includes a fluorescent substance that converts charged particles generated by irradiation of a sample with a charged particle beam into light; a detector that detects the light emitted from the fluorescent substance; a light guide element for guiding the light from the fluorescent substance to the detector; a light amount adjuster that adjusts the amount of light that is received by the detector through the fluorescent substance and the light guide element; and a control unit that controls the light amount adjuster.

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

Abstract: An object of the present disclosure is to provide a system for deriving a type of defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step 603), and derives (Step 605) a type of a defect by referring to (Step 604) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.

Abstract: An object of the present disclosure is to provide a system for deriving a type of a defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step 603), and derives (Step 605) a type of a defect by referring to (Step 604) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.

Abstract: Proposed is a charged particle beam apparatus for the purpose of detecting a charged particle emitted from a sample in a specific direction by discriminating between the charged particle and a charged particle emitted in another direction. As one aspect of achieving the above purpose, proposed is a charged particle beam apparatus including an objective lens configured to focus a beam emitted from a charged particle source, a detector (8) configured to detect at least one of a first charged particle (23) emitted from a sample by irradiating the sample with the beam and a second charged particle emitted from a charged particle collided member by causing the first charged particle to collide with the charged particle collision member disposed on a trajectory of the first charged particle, and an electrostatic lens (12) including a plurality of electrodes disposed between the objective lens and the detector, in which the electrostatic lens is a Butler type.

Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

Abstract: A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam

Abstract: Provided is a technique capable of achieving both throughput and robustness for a function of adjusting brightness (B) and contrast (C) of a captured image in a charged particle beam device. The charged particle beam device includes a computer system having a function (ABCC function) of adjusting the B and the C of an image obtained by imaging a sample. The computer system determines whether adjustment is necessary based on a result obtained by evaluating a first image obtained by imaging an imaging target of the sample (step S2), executes, when the adjustment is necessary based on a result of the determination, the adjustment on a second image of the imaging target to set an adjusted B value and an adjusted C value (step S4), and captures a third image of the imaging target based on the adjusted setting values to generate an image for observation (step S5).

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

Abstract: A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second

Abstract: Provided is a charged particle beam apparatus capable of estimating an internal device structure of a sample. The charged particle beam apparatus includes an electron beam optical system, a detector, and a calculator. The electron beam optical system irradiates a plurality of irradiation points on a sample, which are different in position or time, with an electron beam. The detector detects electrons emitted from the sample in response to irradiation of the electron beam by the electron beam optical system. The calculator calculates a dependence relationship between the irradiation points based on the electrons detected by the detector at the plurality of irradiation points.

Abstract: A charged particle beam device according to the present invention changes a signal amount of emitted charged particles by irradiating the sample with light due to irradiation under a plurality of light irradiation conditions, and determines at least any one of a material of the sample or a shape of the sample according to the changed signal amount.

Abstract: The present disclosure relates to a system and a non-transitory computer-readable medium for estimating the height of foreign matter, etc. adhering to a sample. In order to achieve the abovementioned purpose, proposed is a system, etc. in which data acquired by a charged particle beam device or features extracted from the data are input to a learning model, which is provided with, in an intermediate layer thereof, a parameter learned using teacher data having data acquired by the charged particle beam device or features extracted from the data as inputs and having the heights or depths of the structures of samples or of foreign matter on the samples as outputs, and height or depth information is output.

Abstract: A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

Abstract: Provided is an image processing system capable of estimating a three-dimensional shape of a semiconductor pattern or a particle by solving problems of measurement reduction in a height direction and taking an enormous amount of time at a time of acquiring learning data. The image processing system according to the disclosure stores a detectable range of a detector provided in a charged particle beam device in a storage device in advance, generates a simulated image of a three-dimensional shape pattern using the detectable range, and learns a relationship between the simulated image and the three-dimensional shape pattern in advance.

Abstract: The purpose of the present disclosure is to propose a charged particle beam device capable of allowing specifying of a distance between irradiation points for a pulsed beam and a time between irradiation points.