Patents by Inventor Muneyuki Fukuda
Muneyuki Fukuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130026361Abstract: An amount of pattern position displacement between observation images acquired by irradiating from two different directions is changed depending on beam deflection for moving an image acquisition position. In a pattern evaluation method that measures astigmatic difference or focus position displacement having a small amount of dose at a high speed using parallax caused by the tilted beam, a correction value obtained in advance by measurement is reflected in an amount of pattern position displacement between observation images obtained by irradiating from at least two different directions and generated in accordance with the amount of beam deflection for moving an image acquisition position. A processing unit calculates an amount of correction of an amount of pattern position displacement depending on beam deflection of a beam deflecting unit for moving an image acquisition position on the sample at a high speed.Type: ApplicationFiled: July 26, 2010Publication date: January 31, 2013Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasunari Sohda, Takeyoshi Ohashi, Muneyuki Fukuda, Toru Yamanashi
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Publication number: 20120286160Abstract: A charged particle instrument including a controlling and operating unit for controlling a charged particle source, deflecting means, and focus changing means and making a data for an image by an electric signal detected by a detector, and a recording unit for preserving a correction coefficient registered at each image-acquisition, in which the controlling and operating unit acquires plural images while changing a focus, and controls an optical condition such that a landing angle of a charged particle beam becomes perpendicular when an image for measurement is acquired on the basis of a position shift amount of a mark in the image and a correction coefficient registered to the recording unit.Type: ApplicationFiled: April 20, 2012Publication date: November 15, 2012Inventors: Takeyoshi OHASHI, Yasunari Sohda, Makoto Ezumi, Muneyuki Fukuda, Noritsugu Takahashi
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Publication number: 20120280126Abstract: A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.Type: ApplicationFiled: July 17, 2012Publication date: November 8, 2012Applicant: Hitachi High-Technologies CorporationInventors: Muneyuki FUKUDA, Naomasa SUZUKI, Tomoyasu SHOJO, Noritsugu TAKAHASHI
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Publication number: 20120273692Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: ApplicationFiled: July 12, 2012Publication date: November 1, 2012Applicant: HITACHI, LTD.Inventors: Mitsuo TOKUDA, Muneyuki FUKUDA, Yasuhiro MITSUI, Hidemi KOIKE, Satoshi TOMIMATSU, Hiroyasu SHICHI, Hideo KASHIMA, Kaoru UMEMURA
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Publication number: 20120261574Abstract: An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an E×B deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.Type: ApplicationFiled: June 22, 2012Publication date: October 18, 2012Inventors: Muneyuki Fukuda, Tomoyasu Shojo, Mitsugu Sato, Atsuko Fukada, Naomasa Suzuki, Ichiro Tachibana
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Patent number: 8222618Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: GrantFiled: January 14, 2011Date of Patent: July 17, 2012Assignee: Hitachi, Ltd.Inventors: Mitsuo Tokuda, Muneyuki Fukuda, Yasuhiro Mitsui, Hidemi Koike, Satoshi Tomimatsu, Hiroyasu Shichi, Hideo Kashima, Kaoru Umemura
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Patent number: 8207498Abstract: An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an ExB deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.Type: GrantFiled: January 6, 2011Date of Patent: June 26, 2012Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Tomoyasu Shojo, Mitsugu Sato, Atsuko Fukada, Naomasa Suzuki, Ichiro Tachibana
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Publication number: 20120119085Abstract: The present invention has an object to perform specimen charge measurement or focusing at a high speed and with high precision also for a specimen in which fixed charge and induced charge may be mixedly present. As one mode to achieve the object, there are proposed a specimen potential measuring method and a device to implement the method characterized in that when specimen potential information obtained by a first specimen potential measuring device disposed outside a specimen chamber or specimen potential information beforehand obtained is equal to or more than a predetermined threshold value or is more than the threshold value, measurement of specimen potential is selectively conducted by use of a second specimen potential measuring device in the specimen chamber.Type: ApplicationFiled: July 2, 2010Publication date: May 17, 2012Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Tatsuaki Ishijima, Osamu Nasu, Muneyuki Fukuda, Takeyoshi Ohashi, Hiromasa Yamanashi, Takuji Miyamoto, Kei Sakai
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Publication number: 20120119087Abstract: A charged-particle-beam device is characterized in having a control value for an aligner coil (29) being determined by: a coil current and an electrode applied-voltage at a control value for objectives (30, 31), which is an electromagnetic-field superposition lens; a control value for image-shift coils (27, 28); and the acceleration voltage of the charged-particle-beam. By doing this, it has become possible to avoid image disturbances that occur on images to be displayed at boundaries between charged areas and non-charged areas, and provide a charged-particle-beam device that obtains clear images without any unevenness in brightness.Type: ApplicationFiled: July 13, 2010Publication date: May 17, 2012Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Noritsugu Takahashi, Muneyuki Fukuda, Manabu Yano, Hirohiko Kitsuki, Kazunari Asao, Tomoyasu Shojo
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Patent number: 8153969Abstract: In an electric immersion lens having high resolution capability, secondary electrons generated from a specimen are accelerated to suppress the dependency of rotational action of the secondary electrons applied thereto by an objective lens upon energy levels of the secondary electrons and when selectively detecting low and high angle components of elevation and azimuth as viewed from a secondary electron generation site by means of an annular detector interposed between an electron source and the objective lens, the secondary electrons are adjusted and deflected by means of an E×B deflector such that the center axis of secondary electrons converged finely under acceleration is made to be coincident with the center axis of a low elevation signal detection system and the secondary electrons are deviated from an aperture of a high elevation signal detection system.Type: GrantFiled: November 25, 2008Date of Patent: April 10, 2012Assignee: Hitachi High-Technologies CorporationInventors: Atsuko Fukada, Mitsugu Sato, Naomasa Suzuki, Hidetoshi Nishiyama, Muneyuki Fukuda, Noritsugu Takahashi
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Publication number: 20120004879Abstract: An object of the invention is to be able to select easily and quickly inspection recipes which are appropriate to samples from any number of inspection recipes. A calculating device displays a plurality of inspection recipes on the GUI. An inspection recipe includes settings for controlling charged particle columns which irradiate charged particles on samples with a plurality of characteristics. Plural inspection recipes are arranged and displayed on a coordinate system which is specified by a plurality of axes having characteristic values (robustness variable of charge up, throughput of defect inspection, and accuracy of defect inspection) which have mutually trade-off relationships.Type: ApplicationFiled: September 16, 2011Publication date: January 5, 2012Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Muneyuki FUKUDA, Tomoyasu SHOJO, Atsuko FUKADA, Noritsugu TAKAHASHI
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Publication number: 20110274341Abstract: In order to provide a charged beam device capable of obtaining a precise image of a sample surface pattern while improving the accuracy of automatic focus/astigmatism correction, there are provided an electron gun (1), a deflection control portion (8) which allows an electron beam to scan, a focus control portion (10) and an astigmatism correction portion (3) for the electron beam, an image processing portion (11), and a switching portion (9) which switches scan conditions when obtaining pattern information of the sample (1001) surface and scan conditions when performing the automatic focus/astigmatism correction, and a scan speed and scan procedures are switched between when obtaining the pattern information and when performing the automatic focus/astigmatism correction.Type: ApplicationFiled: January 13, 2010Publication date: November 10, 2011Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Kaori Shirahata, Yoshinori Nakayama, Keiichiro Hitomi, Muneyuki Fukuda, Yasunari Sohda
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Patent number: 8026482Abstract: Potentials at a plurality of points on a diameter of a semiconductor wafer 13 are measured actually. Then, a potential distribution on the diameter is obtained by spline interpolation of potentials between the actually-measured points adjacent in the diameter direction. Thereafter, a two-dimensional interpolation function regarding a potential distribution in the semiconductor wafer 13 is obtained by spline interpolation of potentials between points adjacent in the circumferential direction around the center of the semiconductor wafer 13. Then, a potential at a observation point on the semiconductor wafer 13 is obtained by substituting the coordinate value of this observation point into the two-dimensional interpolation function. As a result, a potential distribution due to electrification of the wafer can be estimated accurately, and the retarding potential can be set to a suitable value.Type: GrantFiled: June 19, 2008Date of Patent: September 27, 2011Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Hiromasa Yamanashi, Sayaka Tanimoto, Yasunari Souda, Osamu Nasu
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Patent number: 8026481Abstract: An object of the invention is to be able to select easily and quickly inspection recipes which are appropriate to samples from any number of inspection recipes. A calculating device displays a plurality of inspection recipes on the GUI. An inspection recipe includes settings for controlling charged particle columns which irradiate charged particles on samples with a plurality of characteristics. Plural inspection recipes are arranged and displayed on a coordinate system which is specified by a plurality of axes having characteristic values (robustness variable of charge up, throughput of defect inspection, and accuracy of defect inspection) which have mutually trade-off relationships.Type: GrantFiled: February 1, 2007Date of Patent: September 27, 2011Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Tomoyasu Shojo, Atsuko Fukada, Noritsugu Takahashi
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Publication number: 20110204225Abstract: An ion beam machining system which performs a predetermined machining of a sample by irradiating the sample with an ion beam includes a beam spot former which forms a beam spot shape of the ion beam to be non-axially symmetric in a perpendicular plane with respect to an irradiation axis of the ion beam, and an axis orientator which orients one axis of the beam spot at the ion beam irradiation position on the sample in a predetermined direction.Type: ApplicationFiled: May 3, 2011Publication date: August 25, 2011Inventors: Hiroyasu Shichi, Muneyuki Fukuda, Yoshinori Nakayama, Masaki Hasegawa, Satoshi Tomimatsu
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Patent number: 7989782Abstract: A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.Type: GrantFiled: January 15, 2009Date of Patent: August 2, 2011Assignee: Hitachi High-Technologies CorporationInventors: Satoshi Tomimatsu, Miyuki Takahashi, Hiroyasu Shichi, Muneyuki Fukuda
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Publication number: 20110174974Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.Type: ApplicationFiled: January 14, 2011Publication date: July 21, 2011Applicant: HITACHI, LTD.Inventors: Mitsuo TOKUDA, Muneyuki FUKUDA, Yasuhiro MITSUI, Hidemi KOIKE, Satoshi TOMIMATSU, Hiroyasu SHICHI, Hideo KASHIMA, Kaoru UMEMURA
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Publication number: 20110147586Abstract: The astigmatism control processing time is decreased to 1 second or less by improving the astigmatic difference measurement accuracy. A charged particle beam device includes: a stage on which a sample is loaded; a transport mechanism which carries the sample onto the stage; a charged particle beam optical system which irradiates the sample on the stage with a charged particle beam and detects secondary charged particles generated from the sample; and a controller which determines setup parameters for the charged particle beam optical system and controls the charged particle beam optical system. The controller registers and holds electro-optical system setup parameters for irradiation with a beam tilted from a normal line on the sample as the charged particle beam, compares observation images obtained by the tilted beam, measures the amount and direction of movement and calculates the amount of astigmatism correction from the amount of movement and the direction.Type: ApplicationFiled: September 10, 2009Publication date: June 23, 2011Inventors: Muneyuki Fukuda, Hiromasa Yamanashi, Yasunari Sohda
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Patent number: 7956324Abstract: The invention provides a charged particle beam apparatus capable of preventing image errors in a display image and capturing a clear display image. A display image displayed on a display unit has a rectangular shape having sides that are substantially parallel to coordinate axes of a rectangular coordinate system determined by wafer alignment. A charged particle beam is radiated onto an area including a display image in a direction that is not parallel to the coordinate axes of the reference rectangular coordinate system to scan the area. Then, among image information obtained by scanning, only information of a position within the display image is displayed on the image display unit. In this way, a clear display image without brightness variation is obtained.Type: GrantFiled: May 29, 2008Date of Patent: June 7, 2011Assignee: Hitachi High-Technologies CorporationInventors: Noritsugu Takahashi, Muneyuki Fukuda, Hideo Todokoro, Mitsugu Sato
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Publication number: 20110129142Abstract: A system is provided that realizes both reduction in coordinate error and improvement in throughput and allows observation of a micro-defect. The system includes: a function of measuring an amount of displacement between preliminarily calculated coordinates and an actual specimen position; a function of optimizing a coordinate correction formula so as to minimize the amount of displacement from the measured amount of displacement; and a function of calculating variation of displacement between the preliminarily calculated coordinates and the actual specimen position by statistical processing. When a value of coordinate variation is sufficiently small with respect to the field of view of an image for observation, which is to be a defect observation image, the system acquires only the image for observation without performing acquisition of an image for search, which is to be a defect search image.Type: ApplicationFiled: July 27, 2009Publication date: June 2, 2011Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Noritsugu Takahashi, Muneyuki Fukuda, Tomoyasu Shojo, Naomasa Suzuki, Kenji Obara