Abstract: Disclosed is a semiconductor device comprising a first conductive film serving as a floating gate and formed on a semiconductor film via a first gate insulating film, a second conductive film serving as a control gate and formed on the first conductive film via a second gate insulating film, and a third conductive film buried in a contact hole formed by removing a part of the second conductive film and second gate insulating film so as to reach an upper surface of the first conductive film from an upper surface of the second conductive film.

Abstract: A semiconductor device comprises a first conductor formed inside or on the top surface of a semiconductor substrate; an insulating film formed on the top surface of said semiconductor substrate or on the top surface of said first conductor; contact holes penetrating said insulating layer to reach said first conductor; a second conductor filled inside said contact holes and electrically connected to said first conductor; and an interconnection extending across contact regions on a top surface region of said insulating layer where said contact holes are formed respectively, and having opposite sides at least one of which is in contact with said second conductor inside said contact regions.

Abstract: A semiconductor device comprises a first conductor formed inside or on the top surface of a semiconductor substrate; an insulating film formed on the top surface of said semiconductor substrate or on the top surface of said first conductor; contact holes penetrating said insulating layer to reach said first conductor; a second conductor filled inside said contact holes and electrically connected to said first conductor; and an interconnection extending across contact regions on a top surface region of said insulating layer where said contact holes are formed respectively, and having opposite sides at least one of which is in contact with said second conductor inside said contact regions.