Abstract: The present invention provides for managing channel configuration information in a wireless communication system. Preferably, the present invention receives transport channel configuration information for configuring at least one transport channel currently not mapping a point-to-multipoint service, wherein the at least one transport channel is capable of mapping at least one new point-to-multipoint service at the start or before the stop of the at least one new point-to-multipoint service, determines whether to receive the at least one new point-to-multipoint service, and reads configuration information for the at least one new point-to-multipoint service at the start of the at least one new point-to-multipoint service if it is determined that the at least one new point-to-multipoint service is to be received.

Abstract: The present invention provides a method and apparatus for determining when power saving functions are not beneficial to a mobile communication device and then limiting or inhibiting the use of power saving functions. Information received either from an external entity or information stored in the mobile communication device is utilized to determine if power saving functions are beneficial. The mobile communication device and or a network with which the mobile communication device communicates may alter their behavior in order to not perform unnecessary power saving functions.

Abstract: A method for controlling CD of etch process defines difference between designed dimension and etched dimension as dimensional displacement and defines target value of the dimensional displacement. A plurality of samples are prepared in each group having different exposure ratios. The plurality of samples of each group are etched until etch end point is detected and then over-etched for uniform time interval after detecting the etch end point. Using etch end point and over-etch time, correlation function of the over-etch time to the etch end point time is determined and the over-etch time to the etch end point is determined using the correlation function.

Abstract: The present invention is directed to interrupting use of a frequency layer convergence scheme that favors selection of a cell on a preferred frequency of a joined point-to-multipoint service. Specifically, a mobile terminal that has joined a point-to-multipoint service having a preferred frequency uses a frequency layer convergence scheme for selecting a cell. The frequency layer convergence scheme favors the selection of a cell on the preferred frequency layer. However, use of the frequency layer convergence scheme is interrupted upon an occurrence of a trigger.

Abstract: The present invention is directed to distinguishing between protocol packets in a wireless communication system. A transmitting side receives an IP packet comprising a User Datagram Protocol (UDP) header and a second header located after the UDP header. The second header is related to either an RTP packet or an RTCP packet. By checking the second header for a payload type field value, the transmitting side can determine whether the second header is related to the RTP packet or the RTCP packet based on the payload type field value. Afterward, the transmitting side assigns a different quality of service for each of at least one of the RTP packet and the RTCP packet according to the determination.

Abstract: The present invention is directed to notifying a mobile terminal, on a control channel MCCH and an indication channel MICH during a modification period, the presence of control information on the control channel MCCH during a subsequent modification period. Specifically, the mobile terminal subscribes to at least one point-to-multipoint service, receives first point-to-multipoint control information related to a first point-to-multipoint service on a point-to-multipoint control channel during a first modification period, and receives notification information on the point-to-multipoint control during the first modification period for indicating the presence of second point-to-multipoint control information related to a second point-to-multipoint service during a second modification period.

Abstract: The present invention is directed to receiving a point-to-multipoint service while receiving a dedicated service in a wireless communication system. A mobile terminal receives radio link configuration information from a network for establishing a radio link with a cell in order to receive the dedicated service. While receiving the radio link configuration information, the mobile terminal also receives directly from the network point-to-multipoint control channel and/or point-to-multipoint indication channel configuration information of the cell for receiving the point-to-multipoint service.

Abstract: The present invention relates to transmitting information regarding a point-to-multipoint service a mobile terminal has joined a target radio network controller (TRNC) during SRNS Relocation. A serving radio network controller (SRNC) initiates the relocation by transmitting a first message for requiring the relocation, wherein the first message includes a message container comprising the information regarding the point-to-multipoint service the mobile terminal has joined. A core network (CN) receives the first message and transmits a relocation request to the TRNC, wherein the relocation request includes the message container. The TRNC transmits a relocation request acknowledgment to the CN to confirm or reject the relocation. The CN sends a relocation command to the SRNC to trigger the relocation. A relocation trigger is then transmitted to the mobile terminal for triggering the relocation and a relocation acknowledgment is received in the TRNC from the mobile terminal.

Abstract: The present invention is a method for identifying a point-to-multipoint service. When a plurality of point-to-multipoint services are multiplexed to one transport channel, a temporary service identifier (TSI) is defined and inserted into a MAC PDU header so that the plurality of point-to-multipoint services can be individually identified. Thus, overhead is reduced and multiple services having a different quality of service (QoS) or multiple streams of different QoS in the same service can be handled and provided to a mobile terminal.

Abstract: A semiconductor memory device having self-aligned contacts, capable of preventing a short-circuit between contacts for bit lines and contacts for storage electrodes and improving a process margin, and a method of fabricating the same are provided.

Abstract: Provided are a semiconductor device having a self-aligned contact plug and a method of fabricating the semiconductor device. The semiconductor device includes conductive patterns, a first interlayer insulating layer, a first spacer, a second interlayer insulating layer, and a contact plug. In each conductive pattern, a conductive layer and a capping layer are sequentially deposited on an insulating layer over a semiconductor substrate. The first interlayer insulating layer fills spaces between the conductive patterns and has a height such that when the first interlayer insulating layer is placed on the insulating layer, the first interlayer insulating layer is lower than a top surface of the capping layer but higher than a top surface of the conductive layer. The first spacer surrounds the outer surface of the capping layer on the first interlayer insulating layer.

Abstract: Disclosed is a semiconductor device having an align key and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having a cell area and an align key area. An isolation layer that defines a cell active area is disposed in the cell area of the semiconductor substrate. A cell charge storage layer pattern is disposed across the cell active area. An align charge storage layer pattern is disposed in the align key area of the semiconductor substrate. An align trench self-aligned with the align charge storage layer pattern is formed in the align key area of the semiconductor substrate.

Abstract: A semiconductor memory device having self-aligned contacts, capable of preventing a short-circuit between contacts for bit lines and contacts for storage electrodes and improving a process margin, and a method of fabricating the same are provided.

Abstract: Provided are a semiconductor device having a self-aligned contact plug and a method of fabricating the semiconductor device. The semiconductor device includes conductive patterns, a first interlayer insulating layer, a first spacer, a second interlayer insulating layer, and a contact plug. In each conductive pattern, a conductive layer and a capping layer are sequentially deposited on an insulating layer over a semiconductor substrate. The first interlayer insulating layer fills spaces between the conductive patterns and has a height such that when the first interlayer insulating layer is placed on the insulating layer, the first interlayer insulating layer is lower than a top surface of the capping layer but higher than a top surface of the conductive layer. The first spacer surrounds the outer surface of the capping layer on the first interlayer insulating layer.

Abstract: An integrated circuit semiconductor device including a cell region formed in a first portion of a silicon substrate, the cell region including a first trench formed in the silicon substrate, a first buried insulating layer filled in the first trench, a first insulating pattern formed over the silicon substrate, and a first conductive pattern formed over the first insulating pattern. An overlay key region is formed in a second portion of the silicon substrate and includes a second trench formed in the silicon substrate, a second insulating pattern formed over the silicon substrate and used as an overlay key, and a second conductive pattern formed over the second insulating pattern and formed by correcting overlay and alignment errors using the second insulating pattern.

Abstract: A semiconductor device includes a plurality of gate trenches, each of which has first inner walls, which face each other in a first direction which is perpendicular to a second direction in which active regions extend, and second inner walls, which face each other in the second direction in which the active regions extends. An isolation layer contacts a gate insulating layer throughout the entire length of the first inner walls of the gate trenches including from entrance portions of the gate trenches to bottom portions of the gate trenches, and a plurality of channel regions are disposed adjacent to the gate insulating layers in the semiconductor substrate along the second inner walls and the bottom portions of the gate trenches.

Abstract: An etching process including plasma pretreatment for generating a polymer layer formed of carbon on a photoresist pattern. The photoresist pattern is treated with plasma that does not contain fluorine radicals and that provides carbon radicals. An etching process is performed on an etching target layer by using the photoresist pattern as an etch mask.

Abstract: A method of manufacturing a semiconductor device having a self-aligned contact includes providing a semiconductor substrate having a self-aligned contact region and a non-self-aligned contact region, forming a first insulating layer on the semiconductor substrate, forming a plurality of conductive patterns on the first insulating layer, forming sequentially second, third and fourth insulating layers over the entire surface of the semiconductor substrate, etching the fourth insulating layer to form spacers on sidewalls of the conductive patterns, forming sequentially fifth and sixth insulating layers over the entire surface of the semiconductor substrate; and etching the sixth insulating layer using a portion of the fifth insulating layer over the self-aligned contact region as an etch stopper, and etching the fifth insulating lever to form a self-aligned contact.

Abstract: Provided are a semiconductor device having a self-aligned contact plug and a method of fabricating the semiconductor device. The semiconductor device includes conductive patterns, a first interlayer insulating layer, a first spacer, a second interlayer insulating layer, and a contact plug. In each conductive pattern, a conductive layer and a capping layer are sequentially deposited on an insulating layer over a semiconductor substrate. The first interlayer insulating layer fills spaces between the conductive patterns and has a height such that when the first interlayer insulating layer is placed on the insulating layer, the first interlayer insulating layer is lower than a top surface of the capping layer but higher than a top surface of the conductive layer. The first spacer surrounds the outer surface of the capping layer on the first interlayer insulating layer.

Abstract: A method for controlling CD of etch process defines difference between designed dimension and etched dimension as dimensional displacement and defines target value of the dimensional displacement. A plurality of samples are prepared in each group having different exposure ratios. The plurality of samples of each group are etched until etch end point is detected and then over-etched for uniform time interval after detecting the etch end point. Using etch end point and over-etch time, correlation function of the over-etch time to the etch end point time is determined and the over-etch time to the etch end point is determined using the correlation function.