Abstract: A bitline sense amplifier including: an amplifier which is connected between a first sensing bitline and a second sensing bitline, and detects and amplifies a voltage difference between a first bitline and a second bitline in response to a first control signal and a second control signal; and an equalizer which is connected between a first supply line through which the first control signal is supplied and a second supply line through which the second control signal is supplied, and pre-charges the first bitline and the second bitline with a precharge voltage in response to an equalizing control signal, wherein the equalizer includes an equalizing enable transistor in which a source terminal is connected to the first supply line and performs equalizing in response to the equalizing control signal.

Abstract: A semiconductor device comprises: a first or a second path configured to transmit a first signal which swings between a ground level and a first level, a third path configured to transmit a second signal which swings between the ground level and a second level lower than the first level, a transmitter configured to output received the first signal through the first or second path as the second signal to the third path, and initialize in response to an enable signal, and a receiver configured to output received the second signal through the third path as the first signal through the first or second path, determine level of the second signal through a reference level that is regulated according to a fed-back level of an output terminal thereof, and initialize in response to the enable signal.

Abstract: A stacked integrated circuit includes a first chip including a first through via set and a second through via set that are disposed to be symmetrical to each other in relation to a first rotating axis and including a first input and output (IO) circuit and a second IO circuit that are disposed to be asymmetrical to each other in relation to the first rotating axis and a second chip including a third through via set and a fourth through via set that are disposed to be symmetrical to each other in relation to a second rotating axis and including a third IO circuit and a fourth IO circuit that are disposed to be asymmetrical to each other in relation to the second rotating axis, the second chip being rotated around the second rotating axis and stacked on the first chip.

Abstract: A semiconductor device comprises: a first or a second path configured to transmit a first signal which swings between a ground level and a first level, a third path configured to transmit a second signal which swings between the ground level and a second level lower than the first level, a transmitter configured to output received the first signal through the first or second path as the second signal to the third path, and initialize in response to an enable signal, and a receiver configured to output received the second signal through the third path as the first signal through the first or second path, determine level of the second signal through a reference level that is regulated according to a fed-back level of an output terminal thereof, and initialize in response to the enable signal.

Abstract: A memory device includes a plurality of data input pads and at least one test data input pad. The memory device also includes a plurality of data input circuits corresponding to a plurality of channels, respectively, the plurality of data input circuits suitable for transmitting respective data received through the data input pads to the corresponding channels. The memory device further includes a test control circuit suitable for selecting at least one data input circuit among the plurality of data input circuits based on test mode information and suitable for controlling the selected data input circuit to transmit set data to the corresponding channel, during a test operation.

Abstract: In an embodiment of the present disclosure, an integrated circuit includes: a first interface suitable for receiving first to Nth data, where N is an even number equal to or greater than 2, and first to Nth multi-phase clocks; an interface conversion circuit suitable for generating serial data based on the first to Nth data that are received through the first interface, and generating a data strobe signal for strobing the serial data based on the first to Nth multi-phase clocks that are received through the first interface; and a second interface suitable for receiving the serial data and the data strobe signal.

Abstract: A clock generator circuit includes: first to Nth nodes, where N is an even number equal to or greater than 2; and a parallel-to-serial conversion circuit suitable for parallel-to-serial converting signals of the first to Nth nodes to output a clock through an output node, wherein, in an activation section of the clock, the signals of even-numbered nodes among the first to Nth nodes have a first level, and the signals of odd-numbered nodes among the first to Nth nodes have a second level which is different from the first level, and wherein, in a deactivation section of the clock, the signals of the first to Nth nodes have the same level.

Abstract: A delay circuit includes a first delay line suitable for delaying a first clock by a delay value that is adjusted based on a delay control code; a delay control circuit suitable for comparing a phase of the first clock delayed through the first delay line with a phase of a second clock to generate the delay control code; and a second delay line having, based on a delay control code, a delay value corresponding to a half of the delay value of the first delay line.

Abstract: A clock generator circuit includes: first to Nth nodes, where N is an even number equal to or greater than 2; and a parallel-to-serial conversion circuit suitable for parallel-to-serial converting signals of the first to Nth nodes to output a clock through an output node, wherein, in an activation section of the clock, the signals of even-numbered nodes among the first to Nth nodes have a first level, and the signals of odd-numbered nodes among the first to Nth nodes have a second level which is different from the first level, and wherein, in a deactivation section of the clock, the signals of the first to Nth nodes have the same level.

Abstract: A delay circuit includes a first delay line suitable for delaying a first clock by a delay value that is adjusted based on a delay control code; a delay control circuit suitable for comparing a phase of the first clock delayed through the first delay line with a phase of a second clock to generate the delay control code; and a second delay line having, based on a delay control code, a delay value corresponding to a half of the delay value of the first delay line.

Abstract: A memory device includes a plurality of data input pads and at least one test data input pad. The memory device also includes a plurality of data input circuits corresponding to a plurality of channels, respectively, the plurality of data input circuits suitable for transmitting respective data received through the data input pads to the corresponding channels. The memory device further includes a test control circuit suitable for selecting at least one data input circuit among the plurality of data input circuits based on test mode information and suitable for controlling the selected data input circuit to transmit set data to the corresponding channel, during a test operation.

Abstract: A stacked memory device includes: a plurality of semiconductor chips that are stacked and transfer signals through a plurality of through-electrodes, wherein at least one of the semiconductor chips comprises: a re-timing circuit suitable for receiving input signals and first and second clocks, performing a re-timing operation of latching the input signals based on the second clock to output re-timed signals, and reflecting a delay time of the re-timing operation into the first clock to output a replica clock; and a transfer circuit suitable for transferring the re-timed signals to the through-electrodes based on the replica clock.

Abstract: A clock generation circuit includes: a frequency detector suitable for generating an internal clock, and generating a counting signal indicating a toggling number of the internal clock during an activation period of an input clock; a control signal generator suitable for generating a plurality of period control signals based on a target signal and the counting signal, the target signal indicating a target frequency of an output clock; and a period controller suitable for generating the output clock based on the period control signals.

Abstract: A clock generation circuit includes: a frequency detector suitable for generating an internal clock, and generating a counting signal indicating a toggling number of the internal clock during an activation period of an input clock; a control signal generator suitable for generating a plurality of period control signals based on a target signal and the counting signal, the target signal indicating a target frequency of an output clock; and a period controller suitable for generating the output clock based on the period control signals.

Abstract: A stacked memory device includes: a plurality of semiconductor chips that are stacked and transfer signals through a plurality of through-electrodes, wherein at least one of the semiconductor chips comprises: a re-timing circuit suitable for receiving input signals and first and second clocks, performing a re-timing operation of latching the input signals based on the second clock to output re-timed signals, and reflecting a delay time of the re-timing operation into the first clock to output a replica clock; and a transfer circuit suitable for transferring the re-timed signals to the through-electrodes based on the replica clock.

Abstract: A memory device includes: a plurality of first control signal interfaces respectively corresponding to a plurality of channels, and suitable for receiving control signals from a host; a plurality of first data interfaces respectively corresponding to the plurality of channels, and suitable for exchanging data and data strobe signals with the host; a second control signal interface suitable for receiving control signals through a selected one of the first control signal interfaces and a selected one of the channels and outputting the received control signals, in a monitoring mode; and a second data interface suitable for receiving a part of the data and data strobe signals exchanged through a selected one of the first data interfaces and the selected channel, and outputting the received part of the data and data strobe signals, in the monitoring mode.

Abstract: A clock generation circuit includes: a frequency detector suitable for generating an internal clock, and generating a counting signal indicating a toggling number of the internal clock during an activation period of an input clock; a control signal generator suitable for generating a plurality of period control signals based on a target signal and the counting signal, the target signal indicating a target frequency of an output clock; and a period controller suitable for generating the output clock based on the period control signals.

Abstract: A memory device includes: a plurality of data pads; a data distribution circuit suitable for distributing data received through some data pads of the plurality of data pads to a first data bus, and distributing data received through the other data pads to a second data bus, in a first mode; a first channel region suitable for storing data obtained by copying the data of the first data bus at a predetermined ratio of 1:N where N is an integer equal to or more than 2; and a second channel region suitable for storing data obtained by copying the data of the second data bus at the predetermined ratio of 1:N.

Abstract: A memory device includes: a plurality of first control signal interfaces respectively corresponding to a plurality of channels, and suitable for receiving control signals from a host; a plurality of first data interfaces respectively corresponding to the plurality of channels, and suitable for exchanging data and data strobe signals with the host; a second control signal interface suitable for receiving control signals through a selected one of the first control signal interfaces and a selected one of the channels and outputting the received control signals, in a monitoring mode; and a second data interface suitable for receiving a part of the data and data strobe signals exchanged through a selected one of the first data interfaces and the selected channel, and outputting the received part of the data and data strobe signals, in the monitoring mode.

Abstract: A memory device includes: a plurality of data pads; a data distribution circuit suitable for distributing data received through some data pads of the plurality of data pads to a first data bus, and distributing data received through the other data pads to a second data bus, in a first mode; a first channel region suitable for storing data obtained by copying the data of the first data bus at a predetermined ratio of 1-N where N is an integer equal to or more than 2; and a second channel region suitable for storing data obtained by copying the data of the second data bus at the predetermined ratio of 1:N.