Patents by Inventor Myoung Jae Lee

Myoung Jae Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
    Publication number: 20060098472
    Abstract: A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a diode structure disposed on the resistor structure, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory devices as described above.
    Type: Application
    Filed: November 10, 2005
    Publication date: May 11, 2006
    Inventors: Seung-Eon Ahn, In-Kyeong Yoo, Young-Soo Joung, Young-Kwan Cha, Myoung-Jae Lee, David Seo, Sun-Ae Seo
  • Memory device using multi-layer with a graded resistance change
    Publication number: 20050247921
    Abstract: A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having the graded resistance change; and an upper electrode being located on the data storage layer.
    Type: Application
    Filed: April 28, 2005
    Publication date: November 10, 2005
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Myoung-jae Lee, In-kyeong Yoo, Sun-ae Seo, Dong-seok Suh, David Seo, Sang-hun Jeon
  • Nonvolatile capacitor of a semiconductor device, semiconductor memory device including the capacitor, and method of operating the same
    Publication number: 20050194622
    Abstract: In a capacitor of a semiconductor device, a semiconductor memory device including the capacitor, and a method of operating the semiconductor memory device, the capacitor includes a lower electrode, a dielectric layer stacked on the lower electrode, the dielectric layer including a phase-transition layer capable of exhibiting two different resistance characteristics depending on whether an insulating property thereof has been changed, and an upper electrode stacked on the dielectric layer.
    Type: Application
    Filed: December 17, 2004
    Publication date: September 8, 2005
    Inventors: Jung-hyun Lee, Sung-ho Park, Myoung-jae Lee, Young-soo Park
  • Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
    Publication number: 20040245557
    Abstract: A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.
    Type: Application
    Filed: May 25, 2004
    Publication date: December 9, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sun-Ae Seo, In-Kyeong Yoo, Myoung-Jae Lee, Wan-Jun Park