Abstract: The inventive concept relates to a smart hearing device for providing a control parameter and feedback for a natural language or a non-natural language determined by analyzing sound data, which includes a receiving unit that receives sound data of a voice signal and a noise signal from a first microphone and a second microphone being formed at one side, a determination unit that compares digital flow of the sound data with a previously stored graph pattern to determine a natural language or a non-natural language for the sound data, a processing unit that matches similar data for the determined natural language or non-natural language, based on a database including a natural language area and a non-natural language area, and a providing unit that provides a user with a one-sided sound converted by setting a control parameter in a natural language or a non-natural language specified according to the matched similar data.

Abstract: A cleaning composition for removing post-etch or post-ash residues from a semiconductor substrate, and a cleaning method using the same are disclosed. The cleaning composition can comprise water; a fluorine compound; an alkanolamine compound; and a corrosion inhibitor. The corrosion inhibitor is a mixture of a first corrosion inhibitor and a second corrosion inhibitor. When using the cleaning composition, it is possible to efficiently remove the residues of various aspects existing on a surface of the substrate or the semiconductor device without damage to a substrate or a semiconductor device including various metal layers, insulating layers, etc. Accordingly, when a highly integrated and miniaturized semiconductor device is manufactured, it may be advantageously applied to the removal of residues generated on the surface of the substrate or the semiconductor device.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A thinner composition is capable of reducing the amount of photoresist used in a reducing resist consumption (RRC) coating process, an edge bead removed (EBR) process or the like, and removing unnecessary photoresist on an edge portion or a backside portion of the wafer. The thinner composition includes C1-C10 alkyl C1-C10 alkoxy propionate, propylene glycol C1-C10 alkyl ether, and propylene glycol C1-C10 alkyl ether acetate.

Abstract: A user is allowed to three-dimensionally recognize environment change and noise change corresponding to the sound directionality of the left and right sides through a control parameter that is set by analyzing an audio signal received from a first smart hearing device formed on one side and a second smart hearing device formed on an opposite side.

Abstract: Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.

Abstract: Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.

Abstract: Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.

Abstract: Provided are an etching composition and an etching method using the same, and more particularly, an etching composition for selectively etching a metal nitride film, an etching method of the metal nitride film using the same, and a method of manufacturing a microelectronic device including a process performed using the same.

Abstract: A method for compressing time series data includes: reading original data including time series data; measuring a unit of the original data; determining a threshold for determining a range allowing for a difference between compressed data and the original data; performing longest distance downsampling to preserve an abnormal point of the original data; storing a start point and an end point of the original data; performing drop-out on the longest distance downsampling result, wherein the drop-out is not performed for the start point and the end point; and if the number of values of the original data is smaller than ? times the original data length, storing at least one of the values of the original data as a reference point, wherein ? is a real number having a value between 0 and 1.

Abstract: A smart hearing method in which an external processor is used in order to reduce the cost of a hearing aid, according to an embodiment of the present invention, comprises the steps of: determining an operation mode of a hearing aid; and when it is determined that the operation mode of the hearing aid corresponds to a test mode among a normal mode and the test mode, transmitting a received audio signal to a terminal other than the hearing aid.

Abstract: A method for compressing time series data includes: reading original data including time series data; measuring a unit of the original data; determining a threshold for determining a range allowing for a difference between compressed data and the original data; performing longest distance downsampling to preserve an abnormal point of the original data; storing a start point and an end point of the original data; performing drop-out on the longest distance downsampling result, wherein the drop-out is not performed for the start point and the end point; and if the number of values of the original data is smaller than a times the original data length, storing at least one of the values of the original data as a reference point, wherein ? is a real number having a value between 0 and 1.

Abstract: A thinner composition is capable of reducing the amount of photoresist used in a reducing resist consumption (RRC) coating process, an edge bead removed (EBR) process or the like, and removing unnecessary photoresist on an edge portion or a backside portion of the wafer. The thinner composition includes C1-C10 alkyl C1-C10 alkoxy propionate, propylene glycol C1-C10 alkyl ether, and propylene glycol C1-C10 alkyl ether acetate.

Abstract: Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.

Abstract: A smart hearing method in which an external processor is used in order to reduce the cost of a hearing aid, according to an embodiment of the present invention, comprises the steps of: determining an operation mode of a hearing aid; and when it is determined that the operation mode of the hearing aid corresponds to a test mode among a normal mode and the test mode, transmitting a received audio signal to a terminal other than the hearing aid.

Abstract: Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.