Abstract: A method for minimizing the degradation of performance upon accessing a flash memory using a logical-physical mapping scheme, and a method for efficiently storing and managing information on logical-physical mapping in a flash memory. A method for writing data in a flash memory includes determining whether a sector is empty in a physical page having a most recently written logical page number of data to be written, the offset of the sector matching that of the data to be written; if the sector is empty, writing the data in the sector to the physical page; and if the sector is not empty, selecting an empty physical page to write the data to a sector in the selected empty physical page of which the offset matches that of the data to be written and writing a logical page number for the data to the selected empty physical page.

Abstract: A method for fabricating a semiconductor device employing a selectivity poly deposition is disclosed. The disclosed method comprises depositing selectivity poly on a gate poly and source/drain regions of the silicon substrate, and forming salicide regions on the gate and active regions from the deposited selectivity poly. Accordingly, the present invention employing selectivity poly deposition can reduce or minimize contact surface resistance and improve the electrical characteristics of the semiconductor device by reducing the surface resistance in a miniature semiconductor device. In addition, because the size of the gate electrode is getting small, the present invention can be used as an essential part of the future generations of nano-scale technology. Moreover, mass semiconductor production systems can promptly employ the present invention with existing equipment.

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a plurality of contact metals, and a gate electrode. The semiconductor substrate has an active region and a dummy active region, and a plurality of contact metals are formed in the active region. A gate electrode is located between the contact metals in the active region. A first distance between the active region and the dummy active region, and a second distance between an edge of the contact metal and an edge of the active region are set such that a channel characteristic of the active region is improved.

Abstract: A system and method for extracting a corner point in a space using pixel information obtained from a camera are provided. The corner point extracting system includes a light generation module emitting light in a predetermined form (such as a plane form), an image acquisition module acquiring an image of a reflector reflecting the light emitted from the light generation module, and a control module obtaining distance data between the light generation module and the reflector using the acquired image and extracting a corner point by performing split-merge using a threshold proportional to the distance data. The threshold is a value proportional to the distance data which corresponds to pixel information of the image acquisition module.

Abstract: Disclosed are an isolation structure and a method for forming the same. The present isolation structure includes a substrate having a first semiconductor layer having a first lattice parameter, a second semiconductor layer having a second lattice parameter larger than the first lattice parameter, and a strained semiconductor layer; a well in the substrate; a plurality of isolation layers in the strained semiconductor layer and the second semiconductor layer, defining an active region; and a plurality of punch stop layers under the isolation layers.

Abstract: A hard disk drive is disclosed and related methods of reading/writing data are disclosed. The hard disk drive includes a disk serving as a main data storage medium, and first and second buffers storing data to be stored on the disk, as well as a controller defining a data I/O path in relation to a detected operating state of the hard disk drive.

Abstract: A semiconductor device may include first and second silicon layers formed over a semiconductor substrate. An insulating layer may be formed between first and second silicon layers. A gate insulating layer, a gate electrode, and a spacer may be formed over a second silicon layer. A source/drain impurity area may be formed over a second silicon layer on both sides of a gate electrode.

Abstract: A hard disk drive is disclosed and related methods of reading/writing data are disclosed. The hard disk drive includes a disk serving as a main data storage medium, and first and second buffers storing data to be stored on the disk, as well as a controller defining a data I/O path in relation to a detected operating state of the hard disk drive.

Abstract: Example embodiments provide a garbage collection method which includes applying a weight to each of at least two or more factors to calculate garbage collection costs; configuring a hash table using the calculated garbage collection costs; searching a block having the lowest garbage collection cost from the hash table; and performing garbage collection on the searched block.

Abstract: A method is for recovering a block mapping table in a system including a flash memory device, where the block mapping table utilizes address mapping in accordance with a wear-leveling scheme. The method includes reading block arrangement information from the flash memory device for the wear-leveling scheme, restoring the block mapping table with reference to allocation block information included in the block arrangement information and scanning address allocation information included in spare regions of erased blocks of the flash memory device with reference to erased block information included in the block arrangement information and updating the block mapping table in accordance with the scanned address allocation information.

Abstract: A semiconductor device and a method for manufacturing the same are disclosed, in which an insulating layer may be formed in a strained silicon layer under source/drain regions to substantially overcome conventional problems resulting from a channel decrease in the semiconductor device.

Abstract: A mapping algorithm for efficient access to a flash memory, wherein block state information that is changed through logical operations required by a processor is written in the flash memory according to a predetermined state transition algorithm and the changed information is referred to upon read/write operations. A mapping control apparatus for a flash memory according to the present invention includes a flash memory having regions divided on a block basis and containing block state information indicating the state of each block, each block including a predetermined number of sectors; and a processor for determining a sector on which a predetermined logical operation is to be performed based on the block state information and updating the block state information according to a predetermined state transition algorithm, when the logical operation is required for the flash memory.

Abstract: A method for fabricating a semiconductor device employing a selectivity poly deposition is disclosed. The disclosed method comprises depositing selectivity poly on a gate poly and source/drain regions of the silicon substrate, and forming salicide regions on the gate and active regions from the deposited selectivity poly. Accordingly, the present invention employing selectivity poly deposition can reduce or minimize contact surface resistance and improve the electrical characteristics of the semiconductor device by reducing the surface resistance in a miniature semiconductor device. In addition, because the size of the gate electrode is getting small, the present invention can be used as an essential part of the future generations of nano-scale technology. Moreover, mass semiconductor production systems can promptly employ the present invention with existing equipment.

Abstract: A semiconductor device may include first and second silicon layers formed over a semiconductor substrate. An insulating layer may be formed between first and second silicon layers. A gate insulating layer, a gate electrode, and a spacer may be formed over a second silicon layer. A source/drain impurity area may be formed over a second silicon layer on both sides of a gate electrode.

Abstract: A hard disk drive is disclosed and related methods of reading/writing data are disclosed. The hard disk drive includes a disk serving as a main data storage medium, and first and second buffers storing data to be stored on the disk, as well as a controller defining a data I/O path in relation to a detected operating state of the hard disk drive.

Abstract: The present invention relates to a flash memory and a method for manufacturing the same, capable of minimizing resistance of the common source line in the flash memory cell manufacturing process. In the memory cell manufacturing method according to the embodiment of the present invention, trench lines are continuously formed on a semiconductor substrate, and gate oxide film lines are formed on the semiconductor substrate except at the trench lines. Sequentially, gate lines vertical with the trench lines are formed on the trench lines and the gate oxide film lines, and the dielectric material of the trench line and the gate dielectric film between adjacent gate lines is removed, and a conductive film of Ti/TiN or Co/Ti/TiN is deposited on the common source region, and then a silicide is formed on the common source region by means of annealing.

Abstract: A system and method extracting a corner point in a space using pixel information obtained from a camera are provided. The corner point extracting system includes a light generation module emitting light in a predetermined form (such as a plane form), an image acquisition module acquiring an image of a reflector reflecting the light emitted from the light generation module, and a control module obtaining distance data between the light generation module and the reflector using the acquired image and extracting a corner point by performing split-merge using a threshold proportional to the distance data. The threshold is a value proportional to the distance data which corresponds to pixel information of the image acquisition module.

Abstract: The present invention relates to a printing through a plurality of printer robot systems. Specifically, the invention provides a mobile printer system which prints letters or pictures inputted by a user without being constrained by the printing region through a plurality of mobile printer robots. The present invention comprises a plurality of mobile printer robot systems which have in-built printer functions and a main body which controls the printer operations through a wireless communication with the printer robot system.

Abstract: A method for minimizing the degradation of performance upon accessing a flash memory using a logical-physical mapping scheme, and a method for efficiently storing and managing information on logical-physical mapping in a flash memory. A method for writing data in a flash memory includes determining whether a sector is empty in a physical page having a most recently written logical page number of data to be written, the offset of the sector matching that of the data to be written; if the sector is empty, writing the data in the sector to the physical page; and if the sector is not empty, selecting an empty physical page to write the data to a sector in the selected empty physical page of which the offset matches that of the data to be written and writing a logical page number for the data to the selected empty physical page.

Abstract: The present invention relates to a flash memory and a method for manufacturing the same, capable of minimizing resistance of the common source line in the flash memory cell manufacturing process. In the memory cell manufacturing method according to the embodiment of the present invention, trench lines are continuously formed on a semiconductor substrate, and gate oxide film lines are formed on the semiconductor substrate except at the trench lines. Sequentially, gate lines vertical with the trench lines are formed on the trench lines and the gate oxide film lines, and the dielectric material of the trench line and the gate dielectric film between adjacent gate lines is removed, and a conductive film of Ti/TiN or Co/Ti/TiN is deposited on the common source region, and then a silicide is formed on the common source region by means of annealing.