Abstract: A canister includes an accommodation portion for accommodating a liquid material; an outlet pipe that is connected to the accommodation portion so as to discharge a gas material obtained by vaporizing the liquid material; a blocking cover that is connected to an upper surface of the accommodation portion; and a plurality of baffle plates that are disposed in the accommodation portion and are spaced apart from each other. The canister further includes a restrictor including a main body member that is disposed between the plurality of baffle plates and the blocking cover and is connected to an internal surface of the accommodation portion, an extension member extending from the main body member, and a through portion that is formed through the main body member and the extension member. A deposition procedure using the canister is efficiently performed and characteristics of a deposition layer are easily improved.

Abstract: A vapor deposition apparatus includes at least one first region and at least one second region. A first blocking unit is arranged between a first exhausting unit and a first injecting unit and between the first exhausting unit and a first purging unit in the first region so as to avoid any common region between the first exhausting unit and the first injecting unit and to avoid any common region between the first exhausting unit and the first purging unit. The vapor deposition apparatus also includes another first blocking unit arranged between a second exhausting unit and a second injecting unit and between the second exhausting unit and a second purging unit in the second region so as to avoid any common region between the second exhausting unit and the second injecting unit and to avoid any common region between the second exhausting unit and the second purging unit.

Abstract: A flat panel display device provides a sealing structure for comprising and sealing a display unit disposed in a first region on a substrate. The display unit includes the first region and a second region, and a barrier is disposed in the first region on the substrate, on an outer side of the display unit, and adjacent to the second region. The sealing structure contacts the barrier, and includes at least one first layer of an inorganic material and at least one second layer of an organic material. A method of manufacturing the flat panel display device is also disclosed.

Abstract: In a thin film deposition apparatus and a thin film deposition method using the same, a first spraying unit and a second spraying unit which are separately driven are prepared, the first spraying unit is driven to sequentially spray a first deposition source and an inert gas onto a substrate, a chamber is exhausted to remove, from the chamber, excess first deposition sources that are not adsorbed onto the substrate from the chamber, a second spraying unit is driven to sequentially spray a second deposition source and an inert gas onto the substrate, and the chamber is exhausted to remove, from the chamber, excess second deposition sources that are not adsorbed onto the substrate. When the thin film deposition method is used, the unintended generation of microparticles during deposition is sufficiently suppressed.

Abstract: A thin film depositing apparatus and a thin film depositing method used by the thin film depositing apparatus. The thin film depositing apparatus includes a deposition chamber through which a process gas outlet of a deposition source is arranged; a transfer shuttle disposed in the deposition chamber, the transfer shuttle comprising a mounting plate for loading a substrate, the transfer shuttle being reciprocal with respect to the process gas outlet; and at least one bendable auxiliary plate installed at one side of the transfer shuttle, the bendable auxiliary plate closing the process gas outlet when opposite the process gas outlet, the bendable auxiliary plate comprising a folding member for placing the bendable auxiliary plate in each of an unbent state and bent state dependent upon the position of the transfer shuttle.

Abstract: A vapor deposition apparatus includes a stage on which a substrate is mounted; a heater unit that is disposed at a side of the stage and includes a first heater and a second heater, wherein the first heater and the second heater are movable so that the first heater and the second heater are spaced apart from each other or are disposed adjacent to each other; and a nozzle unit that is disposed at a side opposite to the side at which the heater unit is disposed about the stage and includes one or more nozzles.

Abstract: A thin film depositing apparatus and a thin film deposition method using the apparatus. The thin film depositing apparatus includes a chamber configured to have a substrate mounted therein, an ejection unit configured to move in the chamber and to eject a deposition vapor to the substrate, and a source supply unit configured to supply a source of the deposition vapor to the ejection unit.

Abstract: A deposition mask includes a mask main body and a coating layer. The mask main body includes a plurality of slits penetrating the mask main body. The coating layer is coated on an entire surface of the mask main body. The coating layer is made of a material different from a material of the main body, and it has a magnetic force stronger than that of the main body. Each of the slits has an open area, and a thickness of the coating layer controls a width of the open area. A photolithography process is used to form the plurality of slits.

Abstract: Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.

Abstract: A sputtering device for depositing a deposition material from a deposition source to a deposition target, wherein a sputtering pressure between the deposition source and the deposition target is from about 6.70×10?2 Pa to about 1.34×10?1 Pa.

Abstract: A sputter device including a plurality of targets having magnetism; a reflector having magnetism and arranged between neighboring targets of the plurality of targets; a wave guide having magnetism and arranged adjacent the targets, the wave guide forming a guide space for guiding microwaves; and a limiter having magnetism and arranged adjacent the wave guide, the limiter forming an electron cyclotron resonance area together with the targets, the reflector, and the wave guide.

Abstract: A vapor deposition apparatus and method for efficiently performing a deposition process to form a thin film with improved characteristics on a substrate, and a method of manufacturing an organic light-emitting display apparatus. The vapor deposition apparatus includes a chamber including an exhaust port; a stage disposed in the chamber, and including a mounting surface on which the substrate is to be disposed; an injection portion including at least one injection opening through which a gas is injected in a direction parallel with a surface of the substrate on which the thin film is to be formed; and a plasma generator disposed apart from the substrate to face the substrate.

Abstract: The present invention provides a catalytic enhanced chemical vapor deposition (CVD) apparatus capable of maximizing efficiency of gas use to 80% or more, and obtaining a uniform thin film by efficiently arranging filaments mounted on a shower head of the catalytic enhanced CVD apparatus, thereby uniformly decomposing a deposition source gas. The present invention also provides a method for fabricating an organic electroluminescent device with an inorganic film formed through the catalytic enhanced CVD apparatus.

Abstract: A vapor deposition source has a reduced size by disposing a crucible, a heating portion, and a nozzle portion in one defined space. A vapor deposition apparatus deposits deposition materials on a substrate using the vapor deposition source. The vapor deposition source includes a housing, and the crucible is mounted in the housing for vaporizing the deposition materials. The heating portion is installed adjacent to the crucible in the housing for heating the crucible. The nozzle portion injects the vaporized deposition materials into a substrate disposed at an exterior of the housing through an injection nozzle. The vapor deposition source is manufactured in a smaller and lightweight form in comparison with conventional vapor deposition sources in which a crucible and a nozzle portion are arranged in different spaces.

Abstract: A method for in-situ polycrystalline thin film growth is provided. A catalyst enhanced chemical vapor deposition (CECVD) apparatus is used to grow the polycrystalline silicon thin film. No subsequent annealing or dehydrogenating process is needed. The method comprises exhausting a chamber to form a vacuum chamber, and then purging vacuum chamber and introducing a catalyst. A substrate is then placed in the vacuum chamber and reaction gas is injected into the chamber. The reaction gas reacts with the catalyst in the chamber to grow a polycrystalline thin film on the substrate. The inventive method reduces processing time and production cost and can be used to fabricate larger devices due to the elimination of bulky annealing equipment.

Abstract: The invention provides a chuck plate assembly that includes a shadow mask formed with a predetermined pattern; a shadow mask frame holding the shadow mask and having heat-radiating and cooling functions; a substrate aligned with the shadow mask and onto which deposition materials from a deposition source are deposited; and a chuck plate, attaching the substrate to the shadow mask, that includes a refrigerant circulating duct. The temperature of the substrate is optimized in consideration of the temperature of the shadow mask so that an alignment error due to thermal deformation is minimized. That is, the temperature of the shadow mask itself is prevented from rising, and thereby prevents deformation of the shadow mask due to thermal expansion, which improves the precision of a substrate pattern position.

Abstract: An evaporation source and method for depositing a thin film, including a crucible having a predetermined space for placing a deposition material and at least one baffle, the baffle positioned inside the crucible and parallel to the predetermined space to divide the crucible into a plurality of channels, a heating unit, and at least one spray nozzle in fluid communication with the crucible, the spray nozzle having a plurality of spray orifices.

Abstract: The present invention provides a catalytic enhanced chemical vapor deposition (CVD) apparatus capable of maximizing efficiency of gas use to 80% or more, and obtaining a uniform thin film by efficiently arranging filaments mounted on a shower head of the catalytic enhanced CVD apparatus, thereby uniformly decomposing a deposition source gas. The present invention also provides a method for fabricating an organic electroluminescent device with an inorganic film formed through the catalytic enhanced CVD apparatus.

Abstract: Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.

Abstract: A method of forming a thin film and a method of fabricating an organic light emitting display device are provided. The method includes depositing a film formation material mixed with a deposition material and an additive material to form the thin film, and the additive material has a eutectic melting point with the deposition material. Accordingly, it is possible to form the thin film at a quite lower temperature compared to a conventional case of forming the thin film using only a deposition material.