Abstract: A phase-change random access memory (PCRAM) device includes a semiconductor substrate; switching elements formed on the semiconductor substrate; a plurality of phase-change structures formed on the switching elements; and heat absorption layers buried between the plurality of phase-change structures, wherein the plurality of phase-change structures are insulated from the heat absorption layers.

Abstract: A variable resistance memory device and a driving method thereof are provided. The variable resistance memory device includes a base layer and a pillar-shaped gate electrode formed on the base layer and extending substantially perpendicular to a surface of the base layer. A current transfer layer is formed to surround the pillar-shaped gate electrode. A variable resistance layer formed in an outer portion of the current transfer layer. A blocking layer blocks a path of current flowing through the current transfer layer based on a voltage applied voltage to the pillar-shaped gate electrode, and diverts the current flowing through the current transfer layer to the variable resistance layer.

Abstract: A variable resistance memory device includes a plurality of column selection switches, a plurality of variable resistance memory cells configured to be stacked and selected by the plurality of column selection switches, and a bit line connected to the plurality of variable resistance memory cells. Each of the plurality of variable resistance memory cells includes an ovonic threshold switch (OTS) element selectively driven by a plurality of word lines arranged to be stacked and a variable resistor connected in parallel to the OTS element.

Abstract: A vertical memory device and a method of fabricating the same are provided. The vertical type semiconductor device includes a common source region formed in a cell area of a semiconductor substrate. A channel region is formed on the common source region. The channel region has a predetermined height and a first diameter. A drain region is formed on the channel region. The drain region has a predetermined height and a second diameter larger than the first diameter. A first gate electrode surrounding the channel region.

Abstract: A resistance variable memory device including a vertical transistor includes an active pillar including a channel region, a source formed in one end of the channel region, and a lightly doped drain (LDD) region and a drain formed in the other end of the channel region, a first gate electrode formed to surround a periphery of the LDD region and having a first work function, and a second gate electrode formed to be connected to the first gate electrode and to surround the channel region and having a second work function that is higher than the first to work function.

Abstract: A high density variable resistive random access memory device and a method of fabricating the same are provided. The device includes first word lines, each separated from each other by a width of first word line; bit lines, each separated from each other by a width of bit line; and second word lines, each located between two adjacent first word lines, wherein the widths of first word line and the bit line are substantially same, and the bit lines are located over the first and second word lines.

Abstract: A variable resistance memory device includes a semiconductor substrate having a vertical transistor with a shunt gate that increases an area of a gate of the vertical transistor.

Abstract: A vertical memory device and a method of fabricating the same are provided. The vertical type semiconductor device includes a common source region formed in a cell area of a semiconductor substrate. A channel region is formed on the common source region. The channel region has a predetermined height and a first diameter. A drain region is formed on the channel region. The drain region has a predetermined height and a second diameter larger than the first diameter. A first gate electrode surrounding the channel region.

Abstract: A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

Abstract: A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

Abstract: A variable resistance memory device includes a plurality of column selection switches, a plurality of variable resistance memory cells configured to be stacked and selected by the plurality of column selection switches, and a bit line connected to the plurality of variable resistance memory cells. Each of the plurality of variable resistance memory cells includes an ovonic threshold switch (OTS) element selectively driven by a plurality of word lines arranged to be stacked and a variable resistor connected in parallel to the OTS element.

Abstract: A phase-change random access memory (PCRAM) device includes a semiconductor substrate; switching elements formed on the semiconductor substrate; a plurality of phase-change structures formed on the switching elements; and heat absorption layers buried between the plurality of phase-change structures, wherein the plurality of phase-change structures are insulated from the heat absorption layers.

Abstract: A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

Abstract: A resistive memory device capable of suppressing disturbance between cells and a fabrication method thereof are provided. The resistive memory device includes a word line formed, in a first direction, on a semiconductor substrate, lower access structures, each having a pillar shape, formed on the word line, a first insulating layer formed around an outer circumference of each of the lower access structures, a heat-absorption layer formed on a surface of each of the to heat-absorption layers, a variable resistive material formed on the lower access structures, and an upper electrode formed on each variable resistive material.

Abstract: A 3-dimensional stack memory device includes a semiconductor substrate, a stacked active pattern configured so that a plurality of stripe shape active regions and insulation layers are stacked alternatively over the semiconductor substrate, a gate electrode formed in the stacked active pattern, a source and drain formed at both sides of the gate electrode in each of the plurality of active regions, a bit line formed on one side of the drain to be connected to the drain, a resistive device layer formed on one side of the source to be connected to the source, and a source line connected to the resistive device layer. The source is configured of an impurity region having a first conductivity type, and the drain is configured of an impurity region having a second conductivity type different from the first conductivity type.

Abstract: A vertical memory device capable of minimizing a cell size and improving current drivability and a method of fabricating the same are provided. The vertical memory device includes a common source region and source regions formed on the common source region and extending in a first direction. Channel regions are formed on each of the source regions, the channel regions extending in the first direction. Trenches are formed between the channel regions. A drain region is formed on each of the channel regions. A conductive layer is formed its on a side of each of the channel regions, the conductive layer extending to the first direction. A data storage material is formed on each of the drain regions.

Abstract: A high density variable resistive random access memory device and a method of fabricating the same are provided. The device includes first word lines, each separated from each other by a width of first word line; bit lines, each separated from each other by a width of bit line; and second word lines, each located between two adjacent first word lines, wherein the widths of first word line and the bit line are substantially same, and the bit lines are located over the first and second word lines.

Abstract: A resistive memory device capable of suppressing disturbance between cells and a fabrication method thereof are provided. The resistive memory device includes a word line formed, in a first direction, on a semiconductor substrate, lower access structures, each having a pillar shape, formed on the word line, a first insulating layer formed around an outer circumference of each of the lower access structures, a heat-absorption layer formed on a surface of each of the to heat-absorption layers, a variable resistive material formed on the lower access structures, and an upper electrode formed on each variable resistive material.

Abstract: A phase-change random access memory (PCRAM) device includes a semiconductor substrate; switching elements formed on the semiconductor substrate; a plurality of phase-change structures formed on the switching elements; and heat absorption layers buried between the plurality of phase-change structures, wherein the plurality of phase-change structures are insulated from the heat absorption layers.

Abstract: A stack memory apparatus is provided. The stack memory apparatus includes a semiconductor substrate, and a plurality of memory cells, each including a switching element and a variable resister connected in parallel, stacked on the semiconductor substrate. The plurality of memory cells is configured to be connected to each other in series.