Patents by Inventor Nan Tu

Nan Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200083390
    Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.
    Type: Application
    Filed: November 13, 2019
    Publication date: March 12, 2020
    Inventors: Ming-Chi Wu, Chien Nan Tu, Kun-Yu Lin, Shih-Shiung Chen
  • Publication number: 20200083389
    Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.
    Type: Application
    Filed: November 13, 2019
    Publication date: March 12, 2020
    Inventors: Ming-Chi Wu, Chien Nan Tu, Kun-Yu Lin, Shih-Shiung Chen
  • Publication number: 20200052014
    Abstract: A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.
    Type: Application
    Filed: October 21, 2019
    Publication date: February 13, 2020
    Inventors: Ping-Yin Liu, Yeur-Luen Tu, Chia-Shiung Tsai, Xiaomeng Chen, Pin-Nan Tseng
  • Patent number: 10553733
    Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: February 4, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Han Huang, Chien Nan Tu, Chi-Yuan Wen, Ming-Chi Wu, Yu-Lung Yeh, Hsin-Yi Kuo
  • Patent number: 10553628
    Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
    Type: Grant
    Filed: September 11, 2018
    Date of Patent: February 4, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
  • Publication number: 20200020816
    Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.
    Type: Application
    Filed: September 24, 2019
    Publication date: January 16, 2020
    Inventors: Po-Han Huang, Chien Nan Tu, Chi-Yuan Wen, Ming-Chi Wu, Yu-Lung Yeh, Hsin-Yi Kuo
  • Publication number: 20200006410
    Abstract: A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.
    Type: Application
    Filed: September 4, 2018
    Publication date: January 2, 2020
    Inventors: Ming-Chi Wu, Chun-Chieh Fang, Bo-Chang Su, Chien Nan Tu, Yu-Lung Yeh, Kun-Yu Lin, Shih-Shiung Chen
  • Patent number: 10510910
    Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Chi Wu, Chien Nan Tu, Kun-Yu Lin, Shih-Shiung Chen
  • Publication number: 20190371835
    Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
    Type: Application
    Filed: August 15, 2019
    Publication date: December 5, 2019
    Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
  • Patent number: 10453889
    Abstract: A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: October 22, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ping-Yin Liu, Yeur-Luen Tu, Chia-Shiung Tsai, Xiaomeng Chen, Pin-Nan Tseng
  • Patent number: 10438980
    Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: October 8, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
  • Publication number: 20190181174
    Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.
    Type: Application
    Filed: February 15, 2019
    Publication date: June 13, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh FANG, Ming-Chi WU, Ji-Heng JIANG, Chi-Yuan WEN, Chien-Nan TU, Yu-Lung YEH, Shih-Shiung CHEN, Kun-Yu LIN
  • Publication number: 20190148570
    Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.
    Type: Application
    Filed: January 23, 2018
    Publication date: May 16, 2019
    Inventors: Ming-Chi Wu, Chien Nan Tu, Kun-Yu Lin, Shih-Shiung Chen
  • Publication number: 20190131334
    Abstract: A semiconductor device includes a device layer, a semiconductor layer, a sensor element, a dielectric layer, a color filter layer, and a micro-lens. The semiconductor layer is over the device layer. The semiconductor layer has a plurality of microstructures thereon. Each of the microstructures has a substantially triangular cross-section. The sensor element is under the microstructures of the semiconductor layer and is configured to sense incident light. The dielectric layer is over the microstructures of the semiconductor layer. The color filter layer is over the dielectric layer. The micro-lens is over the color filter layer.
    Type: Application
    Filed: December 13, 2018
    Publication date: May 2, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Nan TU, Yu-Lung YEH, Hsing-Chih LIN, Chien-Chang HUANG, Shih-Shiung CHEN
  • Patent number: 10211244
    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: February 19, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh Fang, Ming-Chi Wu, Ji-Heng Jiang, Chi-Yuan Wen, Chien-Nan Tu, Yu-Lung Yeh, Shih-Shiung Chen, Kun-Yu Lin
  • Patent number: 10204959
    Abstract: A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.
    Type: Grant
    Filed: December 26, 2014
    Date of Patent: February 12, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chien-Chang Huang, Li-Ming Sun, Chien Nan Tu, Yi-Ping Pan, Yu-Lung Yeh
  • Publication number: 20190027517
    Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
    Type: Application
    Filed: September 11, 2018
    Publication date: January 24, 2019
    Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
  • Publication number: 20190006408
    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.
    Type: Application
    Filed: June 30, 2017
    Publication date: January 3, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh FANG, Ming-Chi WU, Ji-Heng JIANG, Chi-Yuan WEN, Chien-Nan TU, Yu-Lung YEH, Shih-Shiung CHEN, Kun-Yu LIN
  • Patent number: 10164141
    Abstract: A semiconductor device includes a carrier wafer, a device layer, a first semiconductor layer and a second semiconductor layer. The device layer is disposed on the carrier wafer. The first semiconductor layer is disposed on the device layer, and has a first side face and a second side face opposite to the first side face, in which the first side face is adjacent to the device layer. The second semiconductor layer is disposed on the first semiconductor layer, and has a third side face and a fourth side face opposite to the third side face, in which the fourth side face of the second semiconductor layer is adjacent to the second side face of the first semiconductor layer, and the second semiconductor layer is implanted and annealed.
    Type: Grant
    Filed: July 15, 2014
    Date of Patent: December 25, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Nan Tu, Yu-Lung Yeh, Hsing-Chih Lin, Chien-Chang Huang
  • Patent number: 10157946
    Abstract: A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: December 18, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Nan Tu, Yu-Lung Yeh, Hsing-Chih Lin, Chien-Chang Huang, Shih-Shiung Chen