Patents by Inventor Nan Wang

Nan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240401144
    Abstract: The present invention relates to a primer-probe composition, a kit, and a detection method. The primer-probe composition is selected from one group of group (i) to group (ix), and the kit comprises the primer-probe composition. According to the present invention, the detection of AKR1C3 RNA content in an ex vivo sample of a patient can be achieved.
    Type: Application
    Filed: March 5, 2021
    Publication date: December 5, 2024
    Inventors: Yanbin Xie, Jing Hao, Ning Wang, Nan Liu
  • Publication number: 20240405069
    Abstract: A method includes forming first nanostructures over a first region of a substrate; forming second nanostructures over a second region of the substrate; forming a first gate structure around the first nanostructures; replacing the second nanostructures with isolation regions; and forming a through via extending through isolation regions and into the substrate.
    Type: Application
    Filed: October 31, 2023
    Publication date: December 5, 2024
    Inventors: Chih Hsin Yang, Mao-Nan Wang, Dian-Hau Chen
  • Publication number: 20240404384
    Abstract: There is provided a smoke detector including a first light source, a second light source surface, a light sensor and a processor. The light sensor receives reflected light when the first light source and the second light source emit light, and generates a first detection signal corresponding to light emission of the first light source and a second detection signal corresponding to light emission of the second light source. The processor distinguishes smoke and floating particles according to a similarity between the first detection signal and the second detection signal.
    Type: Application
    Filed: August 13, 2024
    Publication date: December 5, 2024
    Inventors: CHENG-NAN TSAI, GUO-ZHEN WANG, CHING-KUN CHEN, YEN-CHANG CHU, CHIH-MING SUN
  • Patent number: 12160151
    Abstract: An electronic device for controlling an LRA (Linear Resonant Actuator) includes a signal generator, a driver, a delay unit, a sensor, and a DSP (Digital Signal Processor). The signal generator generates a digital signal. The driver drives the LRA according to the digital signal. The delay unit delays the digital signal for a predetermined time, so as to generate an estimated voltage signal. The sensor detects the current flowing through the LRA, so as to generate a sensing current signal. The DSP controls the resonant frequency or the gain value of the signal generator according to the estimated voltage signal and the sensing current signal.
    Type: Grant
    Filed: October 28, 2021
    Date of Patent: December 3, 2024
    Assignee: Richtek Technology Corporation
    Inventors: Tsung-Han Yang, Yen-Chih Wang, Ming-Jun Hsiao, Tsung-Nan Wu
  • Publication number: 20240394605
    Abstract: The invention provides a system and a method thereof for establishing an extubation prediction using a machine learning model capable of obtaining an extubation prediction model and key features used by the extubation prediction model through training and/or verification of a machine learning model, and analyzing key feature data of a patient in real time through the extubation prediction model in order to obtain a possibility of extubation of the patient and its related explanation. Accordingly, the system and the method thereof for establishing the extubation prediction using the machine learning model disclosed in the invention are used as a tool for clinical caregivers to evaluate extubation in order to reduce a possibility of reintubation due to inability to breathe spontaneously after extubation.
    Type: Application
    Filed: June 21, 2023
    Publication date: November 28, 2024
    Inventors: WEN-CHENG CHAO, KAI-CHIH PAI, MING-CHENG CHAN, CHIEH-LIANG WU, MIN-SHIAN WANG, CHIEN-LUN LIAO, TA-CHUN HUNG, YAN-NAN LIN, HUI-CHIAO YANG, RUEY-KAI SHEU, LUN-CHI CHEN
  • Publication number: 20240391805
    Abstract: The invention relates to an electrochemically assisted ion exchange water treatment device. Disclosed is a water treatment device comprising a first inlet feeding water into line L0; a prefiltration unit; a water treatment unit comprising an electrochemical cell assembly comprising of at least one electrochemical cell; and a reverse osmosis unit, wherein the electrochemical cell assembly and the reverse osmosis unit are connected in parallel; a wastewater line for discarding wastewater from the electrochemical cell, through the waste water outlet; a wastewater line for discarding reject water from the reverse osmosis unit, through the reject water outlet; a carbon filtration unit positioned on line L0 downstream of the point N; and an outlet for dispensing treated water. The invention provides a device which gives significantly higher recovery of treated water.
    Type: Application
    Filed: September 21, 2022
    Publication date: November 28, 2024
    Applicant: Zhejiang Qinyuan Water Treatment S. T. Co., Ltd.
    Inventors: Yao Wang, Rul YAN, Miaoquan HUANG, Chengqian ZHANG, Nan ZHAO
  • Publication number: 20240394458
    Abstract: A method (of generating a revised layout diagram of a conductive line structure for an IC) including: for a first set of pillar patterns that represents portions of an M(i) layer of metallization and where i is a non-negative number, the first set including first and second pillar patterns which extend in a first direction, are non-overlapping of each other with respect to the first direction, are aligned with each other and have a first distance of separation, determining a first distance of separation as between corresponding immediately adjacent members of the first set; recognizing that the first distance is less than a transverse routing (TVR) separation threshold for an M(i+j) layer of metallization, where j is an integer and j?2; and increasing the first distance so as to become a second distance which is greater than the TVR separation threshold of the M(i+j) layer.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 28, 2024
    Inventors: Hiranmay BISWAS, Chung-Hsing WANG, Kuo-Nan YANG, Yi-Kan CHENG
  • Publication number: 20240391344
    Abstract: A method for authentication of charging a vehicle includes: transmitting a vehicle identification number and at least one vehicle state information from the vehicle to a charging pile after plugging a charging gun of the charging pile into the vehicle; sending, by the vehicle, its vehicle state information to a remote server; sending, by the charging pile, the vehicle identification number and the vehicle state information derived from the vehicle to the remote server; comparing the vehicle state information sent by the vehicle with the vehicle state information sent by the charging pile for the vehicle identification number in the remote server; and passing the authentication if at least one item in the vehicle state information matches. An additional safety mechanism is realized based on the existing communication standards, and ensures safety in a simple and reliable manner without modifying the charging connection assembly.
    Type: Application
    Filed: August 17, 2022
    Publication date: November 28, 2024
    Inventors: Daisy DAI, Alexander EWALD, Nan JIANG, He MIAO, Apple WANG
  • Publication number: 20240392355
    Abstract: The invention relates to methods of in situ detection of a nucleic acid variation of a target nucleic acid in a sample, including single nucleotide variations, multi-nucleotide variations or splice sites. The method can comprise the steps of contacting the sample with a probe that detects the nucleic acid variation or splice site and a neighbor probe; contacting the sample with pre-amplifiers that bind to the nucleic acid variation probe or splice site probe and neighbor probe, respectively; contacting the sample with a collaboration amplifier that binds to the pre-amplifiers; and contacting the sample with a label probe system, wherein hybridization of the components forms a signal generating complex (SGC) comprising a target nucleic acid with the nucleic acid variation or splice site, the probes and amplifiers; and detecting in situ signal from the SGC on the sample.
    Type: Application
    Filed: July 31, 2024
    Publication date: November 28, 2024
    Inventors: Yuling Luo, Xingyong Wu, Liuliu Pan, Xiaoming Wang, Xiao-Jun Ma, Nan Su, Steve Chen
  • Publication number: 20240387354
    Abstract: A method of forming a semiconductor arrangement includes forming a first capacitor in a first voltage domain and forming a second capacitor in the first voltage domain. The first capacitor is connected in parallel with the second capacitor. A third capacitor and a fourth capacitor are formed in a second voltage domain. The third capacitor is connected in series with the fourth capacitor. The first capacitor and the second capacitor are connected in parallel with a supply terminal of the first voltage domain and a reference terminal of the first voltage domain. The fourth capacitor is connected to a supply terminal of the second voltage domain. The third capacitor is connected to a reference terminal of the second voltage domain.
    Type: Application
    Filed: July 26, 2024
    Publication date: November 21, 2024
    Inventors: Wan-Yu LO, Chung-Hsing WANG, Chin-Shen LIN, Kuo-Nan YANG, Hsiang-Ku SHEN, Dian-Hau CHEN
  • Publication number: 20240384143
    Abstract: The present application discloses a low-viscosity silane-terminated resin for a sealant and a preparation method thereof, and belongs to the technical field of sealants. The present application firstly uses an alcohol initiator, an alkaline earth metal and epoxy alkane to synthesize a low-molecular-weight polymer, then adds a polymetallic cyanide catalyst and the epoxy alkane to synthesize a high-molecular-weight polymer, and finally adds carboxylate metal and isocyanate silane to react to obtain the silane-terminated resin. A short chain segment is successfully introduced into a molecule, and an original molecular crystal is destroyed, to achieve intramolecular plasticization, so that its molecular chain becomes flexible and is easy to move, thus the purpose of reducing viscosity is achieved.
    Type: Application
    Filed: September 29, 2023
    Publication date: November 21, 2024
    Inventors: Nan Dong, Yifeng Jin, Weisong Wang, Majishi Wang
  • Publication number: 20240377251
    Abstract: The disclosure provides a method and apparatus for extracting an avalanche signal.
    Type: Application
    Filed: August 12, 2022
    Publication date: November 14, 2024
    Inventors: Liuping CHEN, Yongsheng FAN, Liting TONG, Xiangsheng SHE, Nan LI, Qibing WANG, Xiangkui WAN
  • Publication number: 20240377939
    Abstract: The present disclosure relates to a split-screen effect generating method and apparatus, a device, and a medium. The method comprises: displaying a split-screen model in a material operation area of an effect manufacturing interface; in response to a trigger operation on a sub-screen contained in the split-screen model, determining a target sub-screen model, and displaying the target sub-screen model at a next display level of the split-screen model; in response to a first material loading operation, loading a common effect material to the material operation area, and displaying the common effect material at the next display level of the split-screen model, wherein the common effect material has the same display level as the target sub-screen model in the material operation area; and generating a split-screen effect on the basis of the split-screen model, the common effect material, and the target sub-screen model.
    Type: Application
    Filed: July 12, 2024
    Publication date: November 14, 2024
    Inventors: Yuwen QIN, Nan ZHAO, Jiancong XU, Gao LIU, Yujia WANG
  • Publication number: 20240379552
    Abstract: Various layouts for conductive interconnects in the conductor layers in an integrated circuit are disclosed. Some or all of the conductive interconnects are included in a power delivery system. In general, the conductive interconnects in a first conductor layer are arranged according to an orthogonal layout and the conductive interconnects in a second conductor layer are arranged according to a non-orthogonal layout. Conductive stripes in a transition conductor layer positioned between the first and the second conductor layers electrically connect the conductive interconnects in the first conductor layer to the conductive interconnects in the second conductor layer.
    Type: Application
    Filed: July 23, 2024
    Publication date: November 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wan-Yu LO, Chung-Hsing WANG, Chin-Shen LIN, Kuo-Nan YANG, Meng-Xiang LEE, Hao-Tien KAN, Jhih-Hong YE
  • Publication number: 20240379210
    Abstract: The present invention related to a method for massage coaching which comprises: capturing at least one image; displaying the at least one image; identifying a person in the at least one image; identifying at least one target massage position of the person in the at least one image; displaying at least one massage indication at the at least one target massage position.
    Type: Application
    Filed: May 4, 2021
    Publication date: November 14, 2024
    Applicant: Nutricia Early Life Nutrition (Shanghai) Co., Ltd.
    Inventors: Mengjin Liu, Bingzhi Guo, Yi Jin, Jiangnan Wang, Nan Sun
  • Patent number: 12138626
    Abstract: In situ-generated microfluidic isolation structures incorporating a solidified polymer network, methods of preparation and use, compositions and kits therefor are described. The ability to introduce in real time, a variety of isolating structures including pens and barriers offers improved methods of micro-object manipulation in microfluidic devices. The in situ-generated isolation structures may be permanently or temporarily installed.
    Type: Grant
    Filed: February 3, 2023
    Date of Patent: November 12, 2024
    Assignee: BRUKER CELLULAR ANALYSIS, INC.
    Inventors: Kristin G. Beaumont, Nan-Linda Ding, Volker L. S. Kurz, Troy A. Lionberger, Randall D. Lowe, Jr., Daniele Malleo, Andrew W. McFarland, J. Tanner Nevill, Xiaohua Wang
  • Patent number: 12143786
    Abstract: An electronic device includes two speakers, a single functional chip, a parameter extraction circuit, an audio processing module, a gain adjusting circuit and a current detecting unit. The current detecting unit is disposed in the functional chip for detecting the driving current of the two speakers. The functional chip provides the driving voltage of the two speakers based on an output signal and converts the analogue current/voltages of the two speakers into digital current/voltages. The parameter extraction circuit acquires the parameter of each speaker based on the digital current/voltages. The audio processing module acquires the gains of various physical quantities based on the parameter of each speaker and determines the final gain of each physical quantity. The gain adjusting circuit provides the output signal by adjusting the gain of an input signal based on the final gain of each physical quantity.
    Type: Grant
    Filed: December 12, 2022
    Date of Patent: November 12, 2024
    Assignee: RICHTEK TECHNOLOGY CORP.
    Inventors: Tsung-Han Yang, Yen-Chih Wang, Ming-Jun Hsiao, Tsung-Nan Wu
  • Publication number: 20240371688
    Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.
    Type: Application
    Filed: July 17, 2024
    Publication date: November 7, 2024
    Inventors: Yu-Shih Wang, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Chia-Cheng Chen, Liang-Yin Chen, Ming-Hsi Yeh, Kuo-Bin Huang
  • Publication number: 20240371919
    Abstract: Semiconductor device structure and methods of forming the same are described. The structure includes a first dielectric layer including a first portion disposed over a source/drain region in an active region of a substrate and a modulation portion over an interlayer dielectric (ILD) in a resistor region of the substrate, the first portion of the first dielectric layer has a first composition, and the modulation portion of the first dielectric layer has a second composition different from the first composition. The structure further includes a resistor layer disposed on the modulation portion of the first dielectric layer in the resistor region and a second dielectric layer disposed over the first dielectric layer in the active region and over the resistor layer in the resistor region.
    Type: Application
    Filed: July 20, 2024
    Publication date: November 7, 2024
    Inventors: Hsueh-Han LU, Kun-Ei CHEN, Chen-Chieh CHIANG, Ling-Sung WANG, Jun-Nan NIAN
  • Patent number: 12136566
    Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.
    Type: Grant
    Filed: October 19, 2022
    Date of Patent: November 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Shih Wang, Po-Nan Yeh, U-Ting Chiu, Chun-Neng Lin, Chia-Cheng Chen, Liang-Yin Chen, Ming-Hsi Yeh, Kuo-Bin Huang