Abstract: A semiconductor device manufacturing method comprises a step of forming a trench to a first insulation film formed on a semiconductor substrate, and forming a lower level wiring in the trench, a step of forming at least one conductive layer on the semiconductor substrate to coat the lower level wiring, a step of forming at least one thin film layer on the conductive layer, a step of forming a hard mask by patterning the thin film, a step of etching the conductive layer by using the hard mask as an etching mask, and forming a conductive pillar-shaped structure, whose upper surface is covered with the hard mask, on the lower level wiring, a step of forming a second insulation film on the semiconductor substrate so that the pillar-shaped structure is buried, a step of forming a wiring trench in which at least the hard mask is exposed, and a step of burying a conductor into the wiring trench after the hard mask is removed, and forming an upper level wiring in the wiring trench.

Abstract: A diamond semiconductor device having at least one MESFET integrated on a single diamond substrate and insulated from other semiconductor elements is made by preparing a homoepitaxial diamond film 1 having a hydrogen-terminated surface; then making a drain ohmic contact 3, a source ohmic contact 4, both of gold, and a gate electrode 5 of aluminum on the film 1; and changing a site of the hydrogen-terminated surface other than the site for the MESFET to be terminated with atoms other than hydrogen atoms.

Abstract: In an Fe-base alloy, Ni is contained by 28 to 34% by weight and Co by 2 to 7% by weight with an average grain size of 30 .mu.m or less. 60 to 95% of crystal grains are oriented in a range of .+-.5 to 45 degrees deviated from the ideal orientation of {100} [001]. Resultant low thermal expansion of the alloy assures high doming characteristics of a shadow mask made thereof.

Abstract: In composition of a Fe-Ni alloy used for television shadow masks and containing in, Co, Mn, Si and Cr as the major components, additional inclusion of Be assures high deformation resistance and easy pore formation via etching without impairing its inherent low thermal expansion. Introduction of annealing at 800.degree. to 1200.degree. C. temperature into production process sufficiently lowers proof stress of the product without causing any noticeable crystal coarseness. Increased mechanical strength enables production of a thin shadow mask material well suited for pore formation via etching, thereby assuring high grade screen display.