Abstract: A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.

Abstract: In an electronic component mounting method, a light-emitting element is temporarily fixed to a board by solder paste and adhesive, the adhesive is cured to fix a main body of the light-emitting element to the board, and solder is melted to bond a terminal of the light-emitting element to the board. The method includes: detecting a positional deviation of an emission portion in a top surface of the light-emitting element; detecting a position of the light-emitting element in a state in which the light-emitting element is held by an absorption nozzle; positioning the emission portion to a prescribed position on the board based on the positional deviation and the position of the light-emitting element; mounting the light-emitting element on the board at a position deviated from the prescribed position by the positional deviation; curing the adhesive; and heating the board to melt the solder.

Abstract: In an electronic component mounting method, a light-emitting element is temporarily fixed to a board by solder paste and adhesive, the adhesive is cured to fix a main body of the light-emitting element to the board, and solder is melted to bond a terminal of the light-emitting element to the board. The method includes: detecting a positional deviation of an emission portion in a top surface of the light-emitting element; detecting a position of the light-emitting element in a state in which the light-emitting element is held by an absorption nozzle; positioning the emission portion to a prescribed position on the board based on the positional deviation and the position of the light-emitting element; mounting the light-emitting element on the board at a position deviated from the prescribed position by the positional deviation; curing the adhesive; and heating the board to melt the solder.

Abstract: A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of ?10° to +10° with respect to an a-plane of the sapphire substrate in the plan view.

Abstract: In an electronic component mounting method, a light-emitting element is temporarily fixed to a board by solder paste and adhesive, the adhesive is cured to fix a main body of the light-emitting element to the board, and solder is melted to bond a terminal of the light-emitting element to the board. The method includes: detecting a positional deviation of an emission portion in a top surface of the light-emitting element; detecting a position of the light-emitting element in a state in which the light-emitting element is held by an absorption nozzle; positioning the emission portion to a prescribed position on the board based on the positional deviation and the position of the light-emitting element; mounting the light-emitting element on the board at a position deviated from the prescribed position by the positional deviation; curing the adhesive; and heating the board to melt the solder.

Abstract: A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.

Abstract: Provided is a bandpass filter for a light emitting device that can improve the light emission efficiency in use for a light emitting device, and a light emitting device that can obtain the high light emission efficiency by using the bandpass filter. The light emitting device includes a substrate; a light emitting element disposed over the substrate; a phosphor-containing layer containing at least one kind of phosphor; and a bandpass filter disposed over a surface of the phosphor-containing layer on the light emitting element side, the bandpass filter including a multilayer film having a plurality of first and second dielectric layers, the second dielectric layer being disposed over the first dielectric layer.

Abstract: A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.

Abstract: A methacrylic resin comprising 80 to 98.5 wt % of methyl methacrylate monomer unit and 1.5 to 20 wt % of at least one different vinyl monomer unit copolymerizable with methyl methacrylate, characterized in that the methacrylic resin has a weight average molecular weight measured by gel permeation chromatography (GPC) of 60,000 to 230,000 and comprises 7 to 30% of a component having a weight average molecular weight of ? or less of a peak weight average molecular weight (Mp) obtained from a GPC elution curve based on the methacrylic resin component.

Abstract: The present invention provides a method of preparing frozen or lyophilized microbial cells which can inhibit damages or death of microbial cells and have high viabilities in freezing or lyophilizing process. A method of preparing frozen or lyophilized microbial cells having high viabilities, characterized by using a permeate which is obtained by filtering milk or whey with ultra-filtration (UF) membrane, as a protecting agent at the time of freezing or lyophilizing.

Abstract: A methacrylic resin comprising 80 to 98.5 wt % of methyl methacrylate monomer unit and 1.5 to 20 wt % of at least one different vinyl monomer unit copolymerizable with methyl methacrylate, characterized in that the methacrylic resin has a weight average molecular weight measured by gel permeation chromatography (GPC) of 60,000 to 230,000 and comprises 7 to 30% of a component having a weight average molecular weight of ? or less of a peak weight average molecular weight (Mp) obtained from a GPC elution curve based on the methacrylic resin component.

Abstract: Disclosed is a light-conducting plate which comprises a transparent resin containing a carbonic acid gas and which has a carbonic acid gas content of from 0.01 to 2% by weight based on the weight of the light-conducting plate. The plate used in a planar light emitting device exhibits increased luminance, improved luminance uniformity, and reduced color unevenness. Also disclosed is a method of producing the light-conducting plate.