Abstract: The present disclosure provides anticancer agents containing a multispecific antigen-binding molecule that can efficiently and specifically recruit T cells to the target cancer cells, particularly CLDN6-expressing cancer cells and such, and can treat cancer through the cytotoxic activity of T cells against target cancer tissues containing CLDN6-expressing cells; combination therapies using the anticancer agent and at least one other anticancer agent; and pharmaceutical compositions for use in the combination therapies.

Abstract: According to one embodiment, a storage system includes a circuit board, a connector, a first memory system, and a second memory system. The connector is on the circuit board and includes first and second slots, the first slot having a first terminal group of first terminals aligned in a first direction, and the second slot being separated from the first slot in a second direction not parallel with the first direction and having a second terminal group of second terminals aligned in the first direction. The first terminal group is reverse to the second terminal group in terminal arrangement order in the first direction. The first memory system is connectable to the first terminal group, while the first memory system is inserted into the first slot. The second memory system is connectable to the second terminal group, while the second memory system is inserted into the second slot.

Abstract: A memory system includes: a connector including a first terminal and a second terminal, each of which is capable of being connected to a host device; a non-volatile memory; and a controller connected between the connector and the non-volatile memory. The controller includes: a control circuit including a first node and a second node; a first signal line connected between the first terminal and the first node and capable of being pulled up to a first power level or a second power level; a second signal line connected to the second terminal; and a first resistance element including one end connected to the first signal line and the other end connected to the second signal line.

Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.

Abstract: According to an embodiment, a semiconductor device includes a substrate, a connector, a volatile semiconductor memory element, multiple nonvolatile semiconductor memory elements, and a controller. A wiring pattern includes a signal line that is formed between the connector and the controller and that connects the connector to the controller. On the opposite side of the controller to the signal line, the multiple nonvolatile semiconductor memory elements are aligned along the longitudinal direction of the substrate.

Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory to store data, a memory controller configured to perform data operations on the nonvolatile member, and a power circuit configured to receive external power and generate internal power to be supplied to the nonvolatile memory and the memory controller. The memory controller is further configured to receive a request signal for disabling supply of the internal power for a first time period and disable the supply of the internal power from the power circuit in response to the request signal after a second time period elapses after reception of the request signal. The second time period is shorter than the first time period. The supply of the internal power from the power circuit resumes after the first time period elapses after the reception of the request signal.

Abstract: According to one embodiment, a memory system includes a board, a memory controller, and a semiconductor memory. When a signal input to a third port or a command received from an outside of the memory system satisfies a first condition, the memory controller is configured to use a first port as a first signal port and to use a second port as a second signal port. When the signal input to the third port or the command received from the outside of the memory system satisfies a second condition, the memory controller is configured to use the first port as the second signal port and to use the second port as the first signal port.

Abstract: Provided is a pharmaceutical composition for orally administering a pharmaceutical active ingredient which has a pH-dependent solubility profile, said pharmaceutical composition making it possible to achieve excellent scrubbing efficiency regardless of the pH inside the alimentary canal. Said oral pharmaceutical composition contains a pharmaceutical active ingredient which has a pH-dependent solubility profile, an inorganic or organic acid, and a hydrophilic polymer.

Abstract: According to an embodiment, a semiconductor device includes a substrate, a connector, a volatile semiconductor memory element, multiple nonvolatile semiconductor memory elements, and a controller. A wiring pattern includes a signal line that is formed between the connector and the controller and that connects the connector to the controller. On the opposite side of the controller to the signal line, the multiple nonvolatile semiconductor memory elements are aligned along the longitudinal direction of the substrate.

Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.

Abstract: According to one embodiment, a memory system includes a board, a memory controller, and a semiconductor memory. When a signal input to a third port or a command received from an outside of the memory system satisfies a first condition, the memory controller is configured to use a first port as a first signal port and to use a second port as a second signal port. When the signal input to the third port or the command received from the outside of the memory system satisfies a second condition, the memory controller is configured to use the first port as the second signal port and to use the second port as the first signal port.

Abstract: A memory system includes: a connector including a first terminal and a second terminal, each of which is capable of being connected to a host device; a non-volatile memory; and a controller connected between the connector and the non-volatile memory. The controller includes: a control circuit including a first node and a second node; a first signal line connected between the first terminal and the first node and capable of being pulled up to a first power level or a second power level; a second signal line connected to the second terminal; and a first resistance element including one end connected to the first signal line and the other end connected to the second signal line.

Abstract: A memory system of an embodiment is connectable to a host and includes a nonvolatile memory and a memory controller. The memory controller includes: a signal line which transfers a signal sent from the host; a resistance element disposed between and electrically connected to the signal line and a wiring line given a reference potential of the memory system; a switching element connected serially to the resistance element and capable of switching a connection between the signal line and the wiring line; and a control circuit which controls the switching element to switch the connection between the signal line and the wiring line from a connected state to a disconnected state, when a change from a first potential to a second potential occurs on the signal line or when a change from the second potential to the first potential occurs on the signal line.

Abstract: According to an embodiment, a semiconductor device includes a substrate, a connector, a volatile semiconductor memory element, multiple nonvolatile semiconductor memory elements, and a controller. A wiring pattern includes a signal line that is formed between the connector and the controller and that connects the connector to the controller. On the opposite side of the controller to the signal line, the multiple nonvolatile semiconductor memory elements are aligned along the longitudinal direction of the substrate.

Abstract: A memory system includes a connector through which power for the memory system is to be supplied from an external device, a controller, a nonvolatile memory device, a power source circuit connected to the controller and the nonvolatile memory device by power lines through which power is supplied to the controller and the nonvolatile memory device, and a power source control circuit that receives a supply of power from the external device through the connector and supplies the power to the power control circuit. The power source control circuit is configured to detect using a divided voltage of a voltage of the power supplied thereto, that the voltage of the power supplied thereto is higher than a predetermined voltage and interrupt the power supplied to the power control circuit if the voltage of the power supplied thereto is higher than the predetermined voltage.

Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.

Abstract: The present disclosure provides multispecific antigen-binding molecules capable of binding to CD3 and CD137 (4-1BB) but not binding to CD3 and CD137 at the same time, and capable of binding to CLDN6. The multispecific antigen-binding molecules of the present disclosure exhibit enhanced T-cell dependent cytotoxicity activity in a CLDN6-dependent manner through binding to the CD3/CD37 and CLDN6. The present invention provides multi-specific antigen-binding molecules and pharmaceutical compositions thereof that can be used for targeting cells expressing CLDN6, for use in immunotherapy for treating various cancers, especially those associated with CLDN6 such as CLDN6-positive cancers.

Abstract: According to one embodiment, a first storage area and a second storage area in which a plurality of tracks are set are provided in a radial direction of a magnetic disk. A plurality of post codes corresponding to the second storage area is stored in the first storage area. A controller controls first processing of reading a plurality of post codes from the first storage area and writing the plurality of read post codes in servo area of the second storage area. In the first processing, the controller controls both second processing and third processing in a state where a write head is located on a first track. The second processing is processing of writing a post code among the plurality of read post codes in a servo area. The third processing is processing of writing user data in a data area or reading user data from a data area.

Abstract: A wheel loader representing a work vehicle includes an operator's seat, an armrest, and a seat operation portion. The armrest is provided lateral to the operator's seat. The seat operation portion controls a position or a posture of the operator's seat. The seat operation portion is attached to the armrest.