Abstract: Provided is a secondary cell excellent in cycle characteristics. The secondary cell includes a positive electrode 5, a negative electrode 6, and an electrolytic solution. A positive electrode mixture of the positive electrode 5 contains LiOH, LiaNibCocAdBeO2 which is a positive electrode active material (a, b, c, d, and e satisfy 1.0?a?1.1, 0.45?b?0.90, 0.05?c+d?0.55, and 0?e?0.006, “A” contains at least one of Mn and Al, and “B” contains at least one of Al, Mg, Mo, Ti, W and Zr), and an oxide. The oxide contains at least one of aluminum oxide, magnesium oxide, molybdenum oxide, titanium oxide, tungsten oxide, and zirconium oxide.

Abstract: According to an embodiment, a semiconductor device includes a substrate, a connector, a volatile semiconductor memory element, multiple nonvolatile semiconductor memory elements, and a controller. A wiring pattern includes a signal line that is formed between the connector and the controller and that connects the connector to the controller. On the opposite side of the controller to the signal line, the multiple nonvolatile semiconductor memory elements are aligned along the longitudinal direction of the substrate.

Abstract: Provided are a lithium ion secondary battery that prevents short circuit of a battery in which energy density, cycle characteristics, and safety are all balanced at high levels; and a method for producing the lithium ion secondary battery. The lithium ion secondary battery according to the present invention has a positive electrode, a negative electrode, and a separator provided between the positive electrode and the negative electrode, in which the negative electrode contains a negative electrode active material containing silicon, the hardness of the negative electrode active material is 10 GPa or more and 20 GPa or less, and the separator has a constitution in which a resin layer and a porous layer are laminated, the thickness of the porous layer is 2 ?m or more and 10 ?m or less when the thickness of the resin layer is 25 ?m or more and 30 ?m or less, and the thickness of the porous layer is 5 ?m or more and 20 ?m or less when the thickness of the resin layer is 15 ?m or more but less than 25 ?m.

Abstract: According to an embodiment, a semiconductor device includes a substrate, a connector, a volatile semiconductor memory element, multiple nonvolatile semiconductor memory elements, and a controller. A wiring pattern includes a signal line that is formed between the connector and the controller and that connects the connector to the controller. On the opposite side of the controller to the signal line, the multiple nonvolatile semiconductor memory elements are aligned along the longitudinal direction of the substrate.

Abstract: Capacity of a lithium ion secondary battery is increased and life of the lithium ion secondary battery is prolonged. A lithium ion secondary battery includes a negative electrode, a positive electrode, and a separator. The negative electrode contains a silicon-containing Si-based negative electrode active material, graphite, and a negative electrode binder.

Abstract: A semiconductor device includes a substrate having a serial advanced technology attachment (SATA) connector that has a plurality of power supply terminals and a plurality of signal terminals, a nonvolatile semiconductor memory unit disposed on the substrate, and a memory control circuit disposed on the substrate, configured to control the nonvolatile semiconductor memory unit, and having a data input terminal connected to a first power supply terminal of the SATA connector and a data output terminal connected to a second power supply terminal of the SATA connector. A serial signal of input data is transmitted from the first power supply terminal to the data input terminal, and a serial signal of output data is transmitted from the data output terminal to the second power supply terminal.

Abstract: A semiconductor device includes a substrate, a nonvolatile semiconductor memory disposed on a surface of the substrate, and a controller disposed on a surface of the controller. The substrate has a slit on an edge on which interface connection terminals are formed, a ground pattern, first and second wiring patterns that are electrically connected to the ground pattern and extend in a direction in which the slit extends, and a through hole that is formed between the first and second wiring patterns and is large enough along a dimension between the first and second wiring patterns to span substantially all of the spacing between the first and second wiring patterns.

Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.

Abstract: A planar light-emitting unit includes a light emission region and a non-light emission region located in an outer periphery of the light emission region. A non-space region is provided between a light guide member and a diffusion member in a region corresponding to the non-light emission region such that a space is formed in a region corresponding to the light emission region between the light guide member and the diffusion member. The non-space region includes a protruding region extending to the light emission region from the non-light emission region, and a conditional expression 0<??2d×tan ? is fulfilled, where ? is a protruding amount (mm) from the non-light emission region of the non-space region, d is a thickness (mm) of the light guide member, and ? is a total reflection critical angle between the light guide member and air.

Abstract: According to one embodiment, a memory system includes a volatile memory, a power supply circuit, and a controller. The power supply circuit includes a first power supply path in which power supplied from a host device is supplied to the volatile memory, a second power supply path in which the power is supplied from the internal power supply to the volatile memory, and a switching device that switches between the first power supply path and the second power supply path. In response to an instruction for a transition to a low power consumption mode received from the host device, the controller outputs, to the switching device, an instruction to switch the power supply circuit from the first power supply path to the second power supply path.

Abstract: A semiconductor laser module 1 has a semiconductor laser device 30 operable to emit a laser beam L having an optical axis along the Z-direction, a collimator lens 40 configured to collimate components of the laser beam L along a direction of a fast axis (Y-direction), and a lens fixture block 50 fixed relative to the semiconductor laser device 30. The lens fixture block 50 has a lens attachment surface 50A perpendicular to the X-direction. An end 40A of the collimator lens 40 along the X-direction is fixed to the lens attachment surface 50A of the lens fixture block 50 with a lens fixation resin 42.

Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.

Abstract: According to an embodiment, a semiconductor device includes a substrate, a connector, a volatile semiconductor memory element, multiple nonvolatile semiconductor memory elements, and a controller. A wiring pattern includes a signal line that is formed between the connector and the controller and that connects the connector to the controller. On the opposite side of the controller to the signal line, the multiple nonvolatile semiconductor memory elements are aligned along the longitudinal direction of the substrate.

Abstract: An interface includes a connector that is physically and electrically connectable to a device conforming to a first interface standard and a device conforming to a second interface standard, and an interface circuit including a signal line extending to a terminal of the connector, a coupling capacitor disposed on the signal line, and a switch having a first end electrically connected to a first terminal of the coupling capacitor and a second end electrically connected to a second terminal of the coupling capacitor. The switch is turned on when the connector is connected to a device conforming to the first interface standard so that a signal bypasses the coupling capacitor and is transmitted through the switch and turned off when the connector is connected to a device conforming to the second interface standard so that the signal is transmitted through the coupling capacitor.

Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.

Abstract: According to an embodiment, a semiconductor device includes a substrate, a connector, a volatile semiconductor memory element, multiple nonvolatile semiconductor memory elements, and a controller. A wiring pattern includes a signal line that is formed between the connector and the controller and that connects the connector to the controller. On the opposite side of the controller to the signal line, the multiple nonvolatile semiconductor memory elements are aligned along the longitudinal direction of the substrate.

Abstract: There is obtained a light emitting device including a configuration such that when a viewing angle is changed, a larger colour variation can be presented. The light emitting device comprises: an organic EL panel having a light emitting surface; a light diffusion layer provided on the light emitting surface; and a color difference creation layer provided on the light diffusion layer to receive lights from the light diffusion layer, change the lights in color and thus discharge them to allow a different color to be observed depending on a viewing angle.

Abstract: The semiconductor laser module 1 has a first substrate 10, a second substrate 20 provided on the first substrate 10, a semiconductor laser device 30 operable to emit a laser beam L having an optical axis along the Z-direction, a collimator lens 40 configured to collimate components of the laser beam L along a direction of a fast axis (Y-direction), and a lens fixture block 50 having a lens attachment surface 50A and a block fixation surface 50B that are perpendicular to the X-direction. An end 40A of the collimator lens 40 along the X-direction is fixed to the lens attachment surface 50A of the lens fixture block 50 with a lens fixation resin 42. The block fixation surface 50B of the lens fixture block 50 is fixed to a side surface 20A of the second substrate 20 along the X-direction with a block fixation resin 52.

Abstract: A planar light-emitting unit includes a light emission region and a non-light emission region located in an outer periphery of the light emission region. A non-space region is provided between a light guide member and a diffusion member in a region corresponding to the non-light emission region such that a space is formed in a region corresponding to the light emission region between the light guide member and the diffusion member. The non-space region includes a protruding region extending to the light emission region from the non-light emission region, and a conditional expression 0<??2d×tan? is fulfilled, where ? is a protruding amount (mm) from the non-light emission region of the non-space region, d is a thickness (mm) of the light guide member, and ? is a total reflection critical angle between the light guide member and air.

Abstract: A lithium-ion secondary battery of the present invention contains: a laminated electrode group formed of a rectangular positive electrode; a rectangular negative electrode; and a separator. In such a laminated electrode group, the positive electrode includes a positive electrode current collector foil, and a positive electrode mixture layer containing a positive electrode active material, the negative electrode includes a negative electrode current collector foil, and a negative electrode mixture layer containing a negative electrode active material. The negative electrode active material includes a silicon-based material, and a carbonaceous material. A mass ratio of the silicon-based material and the carbonaceous material is 20:80 to 80:20. The silicon-based material is a Si alloy or SiOx (0.5?x?1.5). The positive electrode and the negative electrode have a collection terminal protruding from a same side of the laminated electrode group.