Patents by Inventor Naoki Makita

Naoki Makita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190338506
    Abstract: The fixing metal fitting including: a joint base in groove shape mainly composing a joint metal; a cover spacer in groove shape capable of supporting the pillar's axial load by covering the joint base, wherein joint base including: a plane section in rectangular shape coinciding with an end surface of the pillar; a pair of groove walls bent vertically in L shape; and a joining plate standing from the plane section and supported by welded part J contacting at least the pair of groove walls or groove bottom, wherein the cover spacer including: a plane section in rectangular shape for supporting pillar by abutting to the pillar's end surface; a pair of groove walls composed of side edges of plane section respectively bent vertically in L shape; and a slit drilled such that the joining plate will be fitted into slit when the cover spacer is covering the joint base.
    Type: Application
    Filed: January 10, 2018
    Publication date: November 7, 2019
    Applicants: IIDA SANGYO CO., LTD., BX KANESHIN CO., LTD.
    Inventors: Kazuhiko MORI, Moriyasu NAGAYOSHI, Naoki TAKAHASHI, Tsuyoshi MAKITA, Takahiro YAMAGUCHI
  • Publication number: 20190310097
    Abstract: A vehicle control system includes: a first vehicle including a smell detection unit, a smell determination unit configured to determine whether an intensity of the smell is equal to or larger than a predetermined threshold value, a first acquisition unit configured to acquire first vehicle position information indicating a position of the first vehicle, and a notification unit configured to notify a second vehicle about the first vehicle position information when the smell determination unit determines that the intensity of the smell is equal to or larger than the predetermined threshold value; and a second vehicle configured to communicate with the first vehicle and including an information output processing unit configured to cause an information output unit to output a warning notifying about a presence of the first vehicle when an approach determination unit determines that first vehicle is positioned less than the predetermined distance from the second vehicle.
    Type: Application
    Filed: April 3, 2019
    Publication date: October 10, 2019
    Applicant: Toyota Jidosha Kabushiki Kaisha
    Inventors: Mitsugu Makita, Daigo Fujii, Naoki Yamamuro
  • Publication number: 20190265061
    Abstract: An information providing system includes an information providing device and a vehicle. The information providing device includes an acquisition unit configured to acquire second information indicating a candidate point matching first information and evaluation of the candidate point and a second information transmitting unit configured to transmit the second information to the vehicle. The first information indicates a condition for searching for a point at which the vehicle stops when the vehicle is stopped and used for resting. The vehicle includes a second information receiving unit configured to receive the second information from the information providing device and an output unit configured to output the second information.
    Type: Application
    Filed: February 22, 2019
    Publication date: August 29, 2019
    Applicant: Toyota Jidosha Kabushiki Kaisha
    Inventors: Mitsugu Makita, Daigo Fujii, Naoki Yamamuro
  • Publication number: 20190258990
    Abstract: A server apparatus, a vehicle, a service provision system, and a non-transitory storage medium storing a program are disclosed. The server apparatus includes circuitry configured to transmit, to an information terminal of a user, information regarding a service available to the user, receive, from the information terminal, information regarding the service, selected by the user, receive, from the information terminal, package information regarding a package of the user, first location information indicating a location to receive the package from the user, first time information indicating a time to receive the package from the user, second location information indicating a location to return the package, and second time information indicating a time to return the package, and arrange a specified vehicle based on the package information, the first location information, and the first time information.
    Type: Application
    Filed: February 20, 2019
    Publication date: August 22, 2019
    Applicant: Toyota Jidosha Kabushiki Kaisha
    Inventors: Mitsugu Makita, Daigo Fujii, Naoki Yamamuro
  • Publication number: 20190251767
    Abstract: A boarding door control system controls opening and closing of a boarding door of a vehicle. The boarding door control system includes an odor detector and an electronic control unit. The odor detector is configured to detect an odor of a user outside the vehicle. The electronic control unit is configured to, when the odor of the user outside the vehicle, detected by the odor detector, is stronger than or equal to a predetermined threshold, prohibit opening of the boarding door.
    Type: Application
    Filed: February 12, 2019
    Publication date: August 15, 2019
    Applicant: Toyota Jidosha Kabushiki Kaisha
    Inventors: Mitsugu Makita, Daigo Fujii, Naoki Yamamuro
  • Publication number: 20190244522
    Abstract: A server is used to provide a smoking vehicle to a user who wants to smoke. The server includes a communication device. The communication device is configured to receive first time information indicating a boarding time and first location information indicating a boarding location from an information terminal of the user. The communication device is configured to receive location information of the vehicle. The communication device is configured to transmit the first time information and the first location information to the vehicle.
    Type: Application
    Filed: February 4, 2019
    Publication date: August 8, 2019
    Applicant: Toyota Jidosha Kabushiki Kaisha
    Inventors: Mitsugu Makita, Daigo Fujii, Naoki Yamamuro
  • Publication number: 20190242717
    Abstract: An information processing apparatus includes a registration unit receiving registrations of a user providing a service included in an in-vehicle service group and a user desiring to enjoy the service, an acquisition unit matching a first user providing a specific service with a second user desiring to enjoy the specific service, acquiring a first getting-in time and a first getting-in position at which the first user gets in a vehicle, and acquiring a second getting-in time and a second getting-in position at which the second user gets in the vehicle, a formulation unit formulating a movement plan such that the vehicle stops at the first getting-in position at the first getting-in time and stops at the second getting-in position at the second getting-in time, and a transmission unit transmitting movement plan information. The vehicle includes a reception unit receiving the movement plan information and an output unit outputting the information.
    Type: Application
    Filed: February 1, 2019
    Publication date: August 8, 2019
    Applicant: Toyota Jidosha Kabushiki Kaisha
    Inventors: Mitsugu Makita, Daigo Fujii, Naoki Yamamuro
  • Publication number: 20190120130
    Abstract: In a vehicle, a rod of a waste gate valve actuator reciprocates along a virtual plane which is parallel to both the central axis of a connecting shaft of a turbocharger and the cylinder axis of a cylinder hole. When viewed in the left or right direction of the vehicle, a main catalyst of a catalyst portion is provided forward of the cylinder axis of the cylinder hole. The flow direction of the exhaust gas in the main catalyst intersects with the reciprocating direction of the rod of the waste gate valve actuator when viewed in a direction orthogonal to both the central axis of the connecting shaft of the turbocharger and the central axis of the cylinder hole.
    Type: Application
    Filed: December 13, 2018
    Publication date: April 25, 2019
    Applicant: YAMAHA HATSUDOKI KABUSHIKI KAISHA
    Inventors: Makoto KUROIWA, Hayatoshi SATO, Masaki TORIGOSHI, Yoshitaka MOMIYAMA, Naoki MAKITA
  • Patent number: 10134785
    Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: November 20, 2018
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Naoki Makita, Satoru Tone
  • Patent number: 9985055
    Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: May 29, 2018
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naoki Makita, Satoru Tone
  • Publication number: 20170033133
    Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.
    Type: Application
    Filed: October 13, 2016
    Publication date: February 2, 2017
    Inventors: Naoki MAKITA, Satoru TONE
  • Publication number: 20160247831
    Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.
    Type: Application
    Filed: August 15, 2014
    Publication date: August 25, 2016
    Inventors: Naoki MAKITA, Satoru TONE
  • Patent number: 9349340
    Abstract: In at least one operation control TFT (27N, 27P) in a control circuit (27), an impurity of a type that generates an impurity level of a channel region (33c) is included in the channel region (33c) as a threshold adjustment impurity, and the concentration of the threshold adjustment impurity is made higher than the concentration of the threshold adjustment impurity in channel regions (33c) of other TFTs (21, 25, 28) of the same type, thus causing the absolute value of the threshold voltage to be greater than that of the other TFTs (21, 25, 28) of the same type.
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: May 24, 2016
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Masaki Saitoh, Naoki Makita
  • Patent number: 9117704
    Abstract: A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: August 25, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naoki Makita, Hiroki Mori, Masaki Saitoh
  • Patent number: 9035315
    Abstract: A purpose of the present invention is to reduce the driving voltage of a semiconductor device that includes an n-type TFT and a p-type TFT. Disclosed is a semiconductor device in which an n-channel type first thin film transistor (100) and a p-channel type second thin film transistor (200) are provided on the plane of a substrate (1). A first semiconductor layer (11) of the first thin film transistor (100) has a main portion, which is sandwiched between the upper surface and the lower surface of the first semiconductor layer (11), and an slanted portion, which is sandwiched by the side face and the lower surface of the first semiconductor layer (11). A second semiconductor layer (20) has a main portion, which is sandwiched between the upper surface and the lower surface of the second semiconductor layer (20), and a slanted portion, which is sandwiched between the side face and the lower surface of the second semiconductor layer (20).
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: May 19, 2015
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Hajime Saitoh, Naoki Makita
  • Patent number: 8999823
    Abstract: A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.
    Type: Grant
    Filed: October 20, 2009
    Date of Patent: April 7, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naoki Makita, Hiroshi Nakatsuji
  • Publication number: 20150048377
    Abstract: A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer.
    Type: Application
    Filed: October 29, 2014
    Publication date: February 19, 2015
    Inventors: Naoki MAKITA, Hiroki MORI, Masaki SAITOH
  • Patent number: 8901650
    Abstract: A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: December 2, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naoki Makita, Hiroki Mori, Masaki Saitoh
  • Patent number: 8575713
    Abstract: A semiconductor device 700 includes a substrate and an optical sensor unit 700 formed on the substrate for sensing light and for generating a sensing signal, the optical sensor unit 700 including a first thin film diode 701A for detection of light in a first wavelength range, a second thin film diode 701B detecting light in a second wavelength range that contains wavelengths longer than the longest wavelength in the first wavelength range. The first thin film diode 701A and the second thin film diode 701B are connected in parallel to each other. The sensing signal is generated based on the output from one of the first thin film diode 701A and the second thin film diode 701B. By this means, the wavelength range that can be detected by the optical sensor unit can be expanded and the sensing sensitivity can be increased.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: November 5, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naoki Makita, Masahiro Fujiwara
  • Patent number: 8575614
    Abstract: A semiconductor device 100 includes a thin-film transistor 123 and a thin-film diode 124. The thin-film transistor 123 includes a semiconductor layer S1 with a channel region 114, a source region and a drain region 112, a gate electrode 109 that controls the conductivity of the channel region 114, and a gate insulating film 108 arranged between the semiconductor layer and the gate electrode 109. The thin-film diode 124 includes a semiconductor layer S2 with at least an n-type region 113 and a p-type region 117. The respective semiconductor layers S1 and S2 of the thin-film transistor 123 and the thin-film diode 124 are portions of a single crystalline semiconductor layer, obtained by crystallizing the same crystalline semiconductor film, but have been crystallized to mutually different degrees.
    Type: Grant
    Filed: February 18, 2008
    Date of Patent: November 5, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Naoki Makita