Patents by Inventor Naoki Makita

Naoki Makita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220042448
    Abstract: A straddled vehicle having an engine unit supported by a vehicle body frame. The engine unit includes an engine body, a turbocharger, and an exhaust device. The exhaust device includes an exhaust pipe and a muffler that are connected to each other to form a portion of an exhaust passage, to allow the exhaust gas passed through the turbocharger to pass therethrough, and a first catalyst and a second catalyst that are arranged in this order along a direction in which the exhaust gas flows through the exhaust pipe. The exhaust pipe has an upstream end thereof connected to the turbocharger, a downstream end thereof connected to the muffler, and a corner section that is bent in at least a part thereof between a downstream end of the first catalyst and an upstream end of the second catalyst, the catalysts not being arranged in the corner section.
    Type: Application
    Filed: October 21, 2021
    Publication date: February 10, 2022
    Inventors: Naoki MAKITA, Hayatoshi SATO, Masaki TORIGOSHI, Makoto KUROIWA
  • Publication number: 20220041240
    Abstract: A straddled vehicle having an engine unit. The engine unit includes an engine body having a cylinder axis tilting forward, a radiator including a radiator core, a turbocharger including a turbine wheel and a compressor wheel, and an intercooler including an intercooler core. In a side view, at least a part of the intercooler core, a part of the turbine wheel and a part of the radiator core are within an area enclosed by a first connecting line, a second connecting line, an engine-body front-surface and a wheel rear-surface. In an upward-downward or forward-backward direction of the cylinder axis, the intercooler-core upper end is more upward than the turbine-wheel upper end, the intercooler-core front end is more frontward than the turbine-wheel front end, the intercooler-core lower end is more upward than the radiator-core upper end, and the radiator-core rear end is more frontward than both the turbine-wheel rear end and the intercooler-core rear end.
    Type: Application
    Filed: October 22, 2021
    Publication date: February 10, 2022
    Inventors: Naoki MAKITA, Hayatoshi SATO, Masaki TORIGOSHI, Makoto KUROIWA, Naoto TAJIMA
  • Patent number: 10677151
    Abstract: In a vehicle, a rod of a waste gate valve actuator reciprocates along a virtual plane which is parallel to both the central axis of a connecting shaft of a turbocharger and the cylinder axis of a cylinder hole. When viewed in the left or right direction of the vehicle, a main catalyst of a catalyst portion is provided forward of the cylinder axis of the cylinder hole. The flow direction of the exhaust gas in the main catalyst intersects with the reciprocating direction of the rod of the waste gate valve actuator when viewed in a direction orthogonal to both the central axis of the connecting shaft of the turbocharger and the central axis of the cylinder hole.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: June 9, 2020
    Assignee: YAMAHA HATSUDOKI KABUSHIKI KAISHA
    Inventors: Makoto Kuroiwa, Hayatoshi Sato, Masaki Torigoshi, Yoshitaka Momiyama, Naoki Makita
  • Publication number: 20190120130
    Abstract: In a vehicle, a rod of a waste gate valve actuator reciprocates along a virtual plane which is parallel to both the central axis of a connecting shaft of a turbocharger and the cylinder axis of a cylinder hole. When viewed in the left or right direction of the vehicle, a main catalyst of a catalyst portion is provided forward of the cylinder axis of the cylinder hole. The flow direction of the exhaust gas in the main catalyst intersects with the reciprocating direction of the rod of the waste gate valve actuator when viewed in a direction orthogonal to both the central axis of the connecting shaft of the turbocharger and the central axis of the cylinder hole.
    Type: Application
    Filed: December 13, 2018
    Publication date: April 25, 2019
    Applicant: YAMAHA HATSUDOKI KABUSHIKI KAISHA
    Inventors: Makoto KUROIWA, Hayatoshi SATO, Masaki TORIGOSHI, Yoshitaka MOMIYAMA, Naoki MAKITA
  • Patent number: 10134785
    Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: November 20, 2018
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Naoki Makita, Satoru Tone
  • Patent number: 9985055
    Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: May 29, 2018
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naoki Makita, Satoru Tone
  • Publication number: 20170033133
    Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.
    Type: Application
    Filed: October 13, 2016
    Publication date: February 2, 2017
    Inventors: Naoki MAKITA, Satoru TONE
  • Publication number: 20160247831
    Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.
    Type: Application
    Filed: August 15, 2014
    Publication date: August 25, 2016
    Inventors: Naoki MAKITA, Satoru TONE
  • Patent number: 9349340
    Abstract: In at least one operation control TFT (27N, 27P) in a control circuit (27), an impurity of a type that generates an impurity level of a channel region (33c) is included in the channel region (33c) as a threshold adjustment impurity, and the concentration of the threshold adjustment impurity is made higher than the concentration of the threshold adjustment impurity in channel regions (33c) of other TFTs (21, 25, 28) of the same type, thus causing the absolute value of the threshold voltage to be greater than that of the other TFTs (21, 25, 28) of the same type.
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: May 24, 2016
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Masaki Saitoh, Naoki Makita
  • Patent number: 9117704
    Abstract: A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: August 25, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naoki Makita, Hiroki Mori, Masaki Saitoh
  • Patent number: 9035315
    Abstract: A purpose of the present invention is to reduce the driving voltage of a semiconductor device that includes an n-type TFT and a p-type TFT. Disclosed is a semiconductor device in which an n-channel type first thin film transistor (100) and a p-channel type second thin film transistor (200) are provided on the plane of a substrate (1). A first semiconductor layer (11) of the first thin film transistor (100) has a main portion, which is sandwiched between the upper surface and the lower surface of the first semiconductor layer (11), and an slanted portion, which is sandwiched by the side face and the lower surface of the first semiconductor layer (11). A second semiconductor layer (20) has a main portion, which is sandwiched between the upper surface and the lower surface of the second semiconductor layer (20), and a slanted portion, which is sandwiched between the side face and the lower surface of the second semiconductor layer (20).
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: May 19, 2015
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Hajime Saitoh, Naoki Makita
  • Patent number: 8999823
    Abstract: A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.
    Type: Grant
    Filed: October 20, 2009
    Date of Patent: April 7, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naoki Makita, Hiroshi Nakatsuji
  • Publication number: 20150048377
    Abstract: A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer.
    Type: Application
    Filed: October 29, 2014
    Publication date: February 19, 2015
    Inventors: Naoki MAKITA, Hiroki MORI, Masaki SAITOH
  • Patent number: 8901650
    Abstract: A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: December 2, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naoki Makita, Hiroki Mori, Masaki Saitoh
  • Patent number: 8575614
    Abstract: A semiconductor device 100 includes a thin-film transistor 123 and a thin-film diode 124. The thin-film transistor 123 includes a semiconductor layer S1 with a channel region 114, a source region and a drain region 112, a gate electrode 109 that controls the conductivity of the channel region 114, and a gate insulating film 108 arranged between the semiconductor layer and the gate electrode 109. The thin-film diode 124 includes a semiconductor layer S2 with at least an n-type region 113 and a p-type region 117. The respective semiconductor layers S1 and S2 of the thin-film transistor 123 and the thin-film diode 124 are portions of a single crystalline semiconductor layer, obtained by crystallizing the same crystalline semiconductor film, but have been crystallized to mutually different degrees.
    Type: Grant
    Filed: February 18, 2008
    Date of Patent: November 5, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Naoki Makita
  • Patent number: 8575713
    Abstract: A semiconductor device 700 includes a substrate and an optical sensor unit 700 formed on the substrate for sensing light and for generating a sensing signal, the optical sensor unit 700 including a first thin film diode 701A for detection of light in a first wavelength range, a second thin film diode 701B detecting light in a second wavelength range that contains wavelengths longer than the longest wavelength in the first wavelength range. The first thin film diode 701A and the second thin film diode 701B are connected in parallel to each other. The sensing signal is generated based on the output from one of the first thin film diode 701A and the second thin film diode 701B. By this means, the wavelength range that can be detected by the optical sensor unit can be expanded and the sensing sensitivity can be increased.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: November 5, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Naoki Makita, Masahiro Fujiwara
  • Publication number: 20130222219
    Abstract: In at least one operation control TFT (27N, 27P) in a control circuit (27), an impurity of a type that generates an impurity level of a channel region (33c) is included in the channel region (33c) as a threshold adjustment impurity, and the concentration of the threshold adjustment impurity is made higher than the concentration of the threshold adjustment impurity in channel regions (33c) of other TFTs (21, 25, 28) of the same type, thus causing the absolute value of the threshold voltage to be greater than that of the other TFTs (21, 25, 28) of the same type.
    Type: Application
    Filed: November 8, 2011
    Publication date: August 29, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Masaki Saitoh, Naoki Makita
  • Patent number: 8460954
    Abstract: A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.
    Type: Grant
    Filed: October 22, 2009
    Date of Patent: June 11, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masaki Yamanaka, Hiroshi Nakatsuji, Naoki Makita
  • Patent number: 8415678
    Abstract: A semiconductor device of the present invention is a semiconductor device including a thin film transistor and a thin film diode. A semiconductor layer (113) of the thin film transistor and a semiconductor layer (114) of the thin film diode are both crystalline semiconductor layers. The semiconductor layer (113) of the thin film transistor and the semiconductor layer (114) of the thin film diode respectively include portions formed by crystallizing the same amorphous semiconductor film. The thickness of the semiconductor layer (114) of the thin film diode is greater than the thickness of the semiconductor layer (113) of the thin film transistor. The difference between the thickness of the semiconductor layer (113) of the thin film transistor and the thickness of the semiconductor layer (114) of the thin film diode is greater than 25 nm.
    Type: Grant
    Filed: May 20, 2010
    Date of Patent: April 9, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masaki Yamanaka, Hiroshi Nakatsuji, Naoki Makita
  • Publication number: 20130078787
    Abstract: Disclosed is a method for manufacturing a semiconductor device, including the steps of: forming a first semiconductor film (2) and a second semiconductor film (4) over a glass substrate (6); forming a photosensitive resin over the glass substrate (6) to cover the first semiconductor film (2) and the second semiconductor film (4); conducting an exposure process in which controlled amounts of exposure radiation are projected to the photosensitive resin using a photomask; conducting a developing process on the photosensitive resin that was subjected to the exposure process, to form a first resist (40) over the first semiconductor film (2) and to form a second resist (41) over the second semiconductor film (4); implanting an n-type impurity into the first semiconductor film (2) using the first resist (40) and the second resist (41) as masks; and removing the first resist (40) and implanting a p-type impurity into the first semiconductor film (2) using the second resist (41) as a mask.
    Type: Application
    Filed: May 16, 2011
    Publication date: March 28, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Hiroshi Nakatsuji, Kazushige Hotta, Naoki Makita