Abstract: An image reading device includes a plurality of light-receiving pixels configured to receive reflected light; a first light-shielding member including a plurality of first openings and disposed between the plurality of light-receiving pixels and a reference surface; a second light-shielding member including a plurality of second openings and disposed between the plurality of first openings and the reference surface; and a plurality of condenser lenses disposed at a distance from the plurality of second openings. The plurality of condenser lenses, the second light-shielding member, the first light-shielding member, and the plurality of light-receiving pixels are disposed at positions at which reflected light sequentially passes through one of the condenser lenses corresponding to each light-receiving pixel, one of the second openings corresponding to the each light-receiving pixel, and one of the first openings corresponding to the each light-receiving pixel and enters the each light-receiving pixel.

Abstract: An image reading device (100) includes a first glass member (52), a plurality of condensing lenses (14) provided on a first surface (52a) of the first glass member (52), a first light blocking member (12) having a plurality of first openings (32) respectively corresponding to the plurality of condensing lenses (14), a second glass member (51) having a third surface (51a) in superimposition with the first light blocking member (12), a second light blocking member (11) having a plurality of second openings (31) respectively corresponding to the plurality of first openings (32), a third glass member (53) having a fifth surface (53a) in superimposition with the second light blocking member (11), a third light blocking member (15) having a plurality of third openings (34) respectively corresponding to the plurality of second openings (31), and a sensor unit (3) having a sensor substrate (9) and a plurality of light receiving pixels (10) arrayed in a predetermined array direction on the sensor substrate (9) and res

Abstract: A straddled vehicle having an engine unit. The engine unit includes an engine body having a cylinder axis tilting forward, a radiator including a radiator core, a turbocharger including a turbine wheel and a compressor wheel, and an intercooler including an intercooler core. In a side view, at least a part of the intercooler core, a part of the turbine wheel and a part of the radiator core are within an area enclosed by a first connecting line, a second connecting line, an engine-body front-surface and a wheel rear-surface. In an upward-downward or forward-backward direction of the cylinder axis, the intercooler-core upper end is more upward than the turbine-wheel upper end, the intercooler-core front end is more frontward than the turbine-wheel front end, the intercooler-core lower end is more upward than the radiator-core upper end, and the radiator-core rear end is more frontward than both the turbine-wheel rear end and the intercooler-core rear end.

Abstract: An object of the present invention is to increase an amount of oligonucleotide transported into cytoplasm by allowing a cellular internalization enhancer to efficiently interact with target cells. An oligonucleotide conjugate according to the present invention contains a dendritic polymer, a plurality of oligonucleotides, one or a plurality of cellular internalization enhancers, and one or a plurality of hydrophilic linkers, wherein each oligonucleotide is bonded to the dendritic polymer directly or through a linker, and each cellular internalization enhancer is bonded to the dendritic polymer through the hydrophilic linker.

Abstract: A straddled vehicle having an engine unit supported by a vehicle body frame. The engine unit includes an engine body, a turbocharger, and an exhaust device. The exhaust device includes an exhaust pipe and a muffler that are connected to each other to form a portion of an exhaust passage, to allow the exhaust gas passed through the turbocharger to pass therethrough, and a first catalyst and a second catalyst that are arranged in this order along a direction in which the exhaust gas flows through the exhaust pipe. The exhaust pipe has an upstream end thereof connected to the turbocharger, a downstream end thereof connected to the muffler, and a corner section that is bent in at least a part thereof between a downstream end of the first catalyst and an upstream end of the second catalyst, the catalysts not being arranged in the corner section.

Abstract: A straddled vehicle having an engine unit. The engine unit includes an engine body having a cylinder axis tilting forward, a radiator including a radiator core, a turbocharger including a turbine wheel and a compressor wheel, and an intercooler including an intercooler core. In a side view, at least a part of the intercooler core, a part of the turbine wheel and a part of the radiator core are within an area enclosed by a first connecting line, a second connecting line, an engine-body front-surface and a wheel rear-surface. In an upward-downward or forward-backward direction of the cylinder axis, the intercooler-core upper end is more upward than the turbine-wheel upper end, the intercooler-core front end is more frontward than the turbine-wheel front end, the intercooler-core lower end is more upward than the radiator-core upper end, and the radiator-core rear end is more frontward than both the turbine-wheel rear end and the intercooler-core rear end.

Abstract: A straddled vehicle having an engine unit supported by a vehicle body frame. The engine unit includes an engine body, a turbocharger, and an exhaust device. The exhaust device includes an exhaust pipe and a muffler that are connected to each other to form a portion of an exhaust passage, to allow the exhaust gas passed through the turbocharger to pass therethrough, and a first catalyst and a second catalyst that are arranged in this order along a direction in which the exhaust gas flows through the exhaust pipe. The exhaust pipe has an upstream end thereof connected to the turbocharger, a downstream end thereof connected to the muffler, and a corner section that is bent in at least a part thereof between a downstream end of the first catalyst and an upstream end of the second catalyst, the catalysts not being arranged in the corner section.

Abstract: In a vehicle, a rod of a waste gate valve actuator reciprocates along a virtual plane which is parallel to both the central axis of a connecting shaft of a turbocharger and the cylinder axis of a cylinder hole. When viewed in the left or right direction of the vehicle, a main catalyst of a catalyst portion is provided forward of the cylinder axis of the cylinder hole. The flow direction of the exhaust gas in the main catalyst intersects with the reciprocating direction of the rod of the waste gate valve actuator when viewed in a direction orthogonal to both the central axis of the connecting shaft of the turbocharger and the central axis of the cylinder hole.

Abstract: In a vehicle, a rod of a waste gate valve actuator reciprocates along a virtual plane which is parallel to both the central axis of a connecting shaft of a turbocharger and the cylinder axis of a cylinder hole. When viewed in the left or right direction of the vehicle, a main catalyst of a catalyst portion is provided forward of the cylinder axis of the cylinder hole. The flow direction of the exhaust gas in the main catalyst intersects with the reciprocating direction of the rod of the waste gate valve actuator when viewed in a direction orthogonal to both the central axis of the connecting shaft of the turbocharger and the central axis of the cylinder hole.

Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.

Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.

Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.

Abstract: A semiconductor device (100) includes: a substrate (11); a first thin film transistor (10A) supported on the substrate (11), the first thin film transistor (10A) having a first active region (13c) which mainly contains a crystalline silicon; and a second thin film transistor (10B) being supported on the substrate (11), the second thin film transistor (10B) having a second active region (17c) which mainly contains an oxide semiconductor having a crystalline portion.

Abstract: In at least one operation control TFT (27N, 27P) in a control circuit (27), an impurity of a type that generates an impurity level of a channel region (33c) is included in the channel region (33c) as a threshold adjustment impurity, and the concentration of the threshold adjustment impurity is made higher than the concentration of the threshold adjustment impurity in channel regions (33c) of other TFTs (21, 25, 28) of the same type, thus causing the absolute value of the threshold voltage to be greater than that of the other TFTs (21, 25, 28) of the same type.

Abstract: A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer.

Abstract: A purpose of the present invention is to reduce the driving voltage of a semiconductor device that includes an n-type TFT and a p-type TFT. Disclosed is a semiconductor device in which an n-channel type first thin film transistor (100) and a p-channel type second thin film transistor (200) are provided on the plane of a substrate (1). A first semiconductor layer (11) of the first thin film transistor (100) has a main portion, which is sandwiched between the upper surface and the lower surface of the first semiconductor layer (11), and an slanted portion, which is sandwiched by the side face and the lower surface of the first semiconductor layer (11). A second semiconductor layer (20) has a main portion, which is sandwiched between the upper surface and the lower surface of the second semiconductor layer (20), and a slanted portion, which is sandwiched between the side face and the lower surface of the second semiconductor layer (20).

Abstract: A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.

Abstract: A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer.

Abstract: A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer.

Abstract: A semiconductor device 700 includes a substrate and an optical sensor unit 700 formed on the substrate for sensing light and for generating a sensing signal, the optical sensor unit 700 including a first thin film diode 701A for detection of light in a first wavelength range, a second thin film diode 701B detecting light in a second wavelength range that contains wavelengths longer than the longest wavelength in the first wavelength range. The first thin film diode 701A and the second thin film diode 701B are connected in parallel to each other. The sensing signal is generated based on the output from one of the first thin film diode 701A and the second thin film diode 701B. By this means, the wavelength range that can be detected by the optical sensor unit can be expanded and the sensing sensitivity can be increased.