Patents by Inventor Naoki Matsumoto

Naoki Matsumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10062547
    Abstract: In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: August 28, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Naoki Mihara, Naoki Matsumoto, Jun Yoshikawa, Kazuo Murakami
  • Publication number: 20180211818
    Abstract: A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered on a predetermined center frequency; a plasma generating unit configured to generate plasma by using the carrier wave group; a spectrum detecting unit configured to detect a progressive wave spectrum and a reflection wave spectrum of the carrier wave group; and a control unit configured to calculate, by using the progressive wave spectrum and the reflection wave spectrum, an absorption power which is a power of the carrier wave group absorbed into the plasma, and configured to adjust a parameter, which varies a minimum value of the reflection wave spectrum and a frequency corresponding to the minimum value, such that the absorption power becomes equal to or larger than a threshold value.
    Type: Application
    Filed: July 19, 2016
    Publication date: July 26, 2018
    Inventors: Shinji Kubota, Takashi Dokan, Koji Koyama, Naoki Matsumoto
  • Publication number: 20180210673
    Abstract: A storage device includes a storage retaining content data, an input receiving instructions to reproduce the content data stored in the storage and a reproducer outputting the content data to an external reproducing device. The storage retains a table including identification information of the external reproducing device and a data format of the content data reproducible in the external reproducing device. The reproducer includes a notifier notifying reproduction information necessary for the external reproducing device to reproduce the content data before the content data are outputted to the external reproducing device in response to a reproduction instruction, and a data controller acquiring unique identification information for the external reproducing device when the external reproducing device is connected to the storage device and converting the content data into the data format reproducible in the external reproducing device and outputting the content data thereto.
    Type: Application
    Filed: January 23, 2018
    Publication date: July 26, 2018
    Applicant: Buffalo, Inc.
    Inventor: Naoki MATSUMOTO
  • Patent number: 10031027
    Abstract: An optical nondestructive testing method includes: a laser emitting step involving emitting a heating laser from a laser output device such that the intensity of the heating laser applied to a measurement point changes sinusoidally; a laser intensity measuring step involving measuring the intensity of the heating laser by a phase difference detector; an infrared radiation intensity measuring step involving measuring, by the phase difference detector, the intensity of infrared radiation radiating from the measurement point; a phase difference measuring step involving determining, by the phase difference detector, a phase difference between the intensity of the heating laser and the intensity of the infrared radiation, and outputting the phase difference determined to a determiner from the phase difference detector; and a connection area calculating step involving determining, by the determiner, a connection area in accordance with the phase difference and phase difference-connection area correlation informatio
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: July 24, 2018
    Assignee: JTEKT CORPORATION
    Inventors: Naoki Matsumoto, Kouya Yoshida, Ryota Umezawa, Jun Matsumoto
  • Patent number: 10007083
    Abstract: A lens barrel of the invention is configured with a first barrel member, a second barrel member which rotates around an outer periphery of the first barrel member and which has a through hole between an outer peripheral surface and an inner peripheral surface, and a moisture permeable member provided so as to cover the through hole of the second barrel member.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: June 26, 2018
    Assignee: Olympus Corporation
    Inventors: Naoki Matsumoto, Kyoji Murayama
  • Publication number: 20180166325
    Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.
    Type: Application
    Filed: January 24, 2018
    Publication date: June 14, 2018
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Keiji ISHIBASHI, Akihiro HACHIGO, Yuki HIROMURA, Naoki MATSUMOTO, Seiji NAKAHATA, Fumitake NAKANISHI, Takuya YANAGISAWA, Koji UEMATSU, Yuki SEKI, Yoshiyuki YAMAMOTO, Yusuke YOSHIZUMI, Hidenori MIKAMI
  • Publication number: 20180151332
    Abstract: A plasma processing apparatus includes a microwave output unit, a wave guide tube, a tuner, a demodulation unit, and a calculation unit. The microwave output unit outputs a microwave having power corresponding to setting power while frequency-modulating the microwave in a setting frequency range. The wave guide tube guides the microwave to an antenna of a chamber main body. The tuner is provided in the wave guide tube and adjusts a position of a movable plate. The demodulation unit is provided in the wave guide tube, and acquires travelling wave power and reflected wave power for each frequency. The calculation unit calculates a frequency at which a reflection coefficient, which is calculated on the basis of the travelling wave power and the reflected wave power, for each frequency becomes a minimum point as an absorption frequency.
    Type: Application
    Filed: November 22, 2017
    Publication date: May 31, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kazushi KANEKO, Takashi HASEGAWA, Koji KOYAMA, Naoki MATSUMOTO
  • Patent number: 9984906
    Abstract: A plasma processing device includes a processing chamber defining a plasma processing space and a stage for mounting thereon a target substrate in the processing chamber. The plasma processing device further includes a gas supply mechanism for introducing a processing gas into the plasma processing space, a plasma generation mechanism for supplying electromagnetic energy into the plasma processing space, and a control unit configured to, if a command to start a plasma process for the target substrate mounted on a substrate carry-in stage is issued, perform a warm-up process for supplying the processing gas into the plasma processing space by the gas supply mechanism and supplying the electromagnetic energy by the plasma generation mechanism in a state where no target substrate is mounted on the stage.
    Type: Grant
    Filed: May 21, 2013
    Date of Patent: May 29, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Naoki Matsumoto, Yugo Tomita
  • Publication number: 20180117016
    Abstract: Pharmaceutical compositions comprising an active pharmaceutical ingredient, a high viscosity liquid carrier material, a hydrophobic solvent, and a hydrophilic solvent are disclosed. Also disclosed are methods of manufacturing and using the compositions. The compositions are suitable for use, e.g., as depot formulations.
    Type: Application
    Filed: December 28, 2017
    Publication date: May 3, 2018
    Applicants: DURECT CORPORATION, SANTEN PHARMACEUTICAL CO., LTD.
    Inventors: Wilma TAMRAZ, Huey-Ching SU, WeiQi LIN, Kazuhito YAMADA, Naoki MATSUMOTO, Sreenivasu MUDUMBA, Komei OKABE
  • Patent number: 9917004
    Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: March 13, 2018
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Keiji Ishibashi, Akihiro Hachigo, Yuki Hiromura, Naoki Matsumoto, Seiji Nakahata, Fumitake Nakanishi, Takuya Yanagisawa, Koji Uematsu, Yuki Seki, Yoshiyuki Yamamoto, Yusuke Yoshizumi, Hidenori Mikami
  • Publication number: 20180025923
    Abstract: A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator.
    Type: Application
    Filed: September 29, 2017
    Publication date: January 25, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Naoki MATSUMOTO
  • Publication number: 20180019103
    Abstract: A microwave control method is used in a microwave plasma processing apparatus including a microwave generation unit, a waveguide for guiding a microwave generated by the microwave generation unit, a tuner for controlling a position of a movable short-circuiting plate, and a stub provided between the tuner and an antenna in the waveguide and insertable into an inner space of the waveguide. The method incudes detecting the position of the movable short-circuiting plate controlled by the tuner for the microwave outputted by the microwave generation unit, determining whether or not a difference between a reference position and the detected position of the movable short-circuiting plate is within a tolerable range, and controlling an insertion length of the stub into the inner space of the waveguide when it is determined that the difference between the position of the movable short-circuiting plate and the reference position is not within the tolerable range.
    Type: Application
    Filed: July 11, 2017
    Publication date: January 18, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jun YOSHIKAWA, Naoki MATSUMOTO, Kazushi KANEKO
  • Publication number: 20180000729
    Abstract: Pharmaceutical compositions comprising an active pharmaceutical ingredient, a high viscosity liquid carrier material, a hydrophobic solvent, and a hydrophilic solvent are disclosed. Also disclosed are methods of manufacturing and using the compositions. The compositions are suitable for use, e.g., as depot formulations.
    Type: Application
    Filed: June 29, 2017
    Publication date: January 4, 2018
    Applicants: DURECT CORPORATION, SANTEN PHARMACEUTICAL CO., LTD.
    Inventors: Wilma TAMRAZ, Huey-Ching SU, WeiQi LIN, Kazuhito YAMADA, Naoki MATSUMOTO, Sreenivasu MUDUMBA, Komei OKABE
  • Publication number: 20170348344
    Abstract: Provided is an aqueous ophthalmic solution comprising diquafosol or a salt thereof at a concentration of 0.1% to 10% (w/v) and a chlorhexidine at a concentration of 0.0001% to 0.1% (w/v).
    Type: Application
    Filed: December 25, 2015
    Publication date: December 7, 2017
    Applicant: SANTEN PHARMACEUTICAL CO., LTD.
    Inventors: Koji INAGAKI, Naoki MATSUMOTO, Toshihiro OGAWA, Yukihisa WAKABAYASHI, Asuka KAMIMURA, Yoshihiro OSHITA, Hitoshi NAKAZAWA, Isao MATSUOKA
  • Patent number: 9805959
    Abstract: A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator.
    Type: Grant
    Filed: May 17, 2013
    Date of Patent: October 31, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Naoki Matsumoto
  • Patent number: 9791169
    Abstract: The invention is directed to a liquid heater for rapidly heating a liquid without overheating the liquid. The liquid heater comprises a liquid flow channel having a passage through which liquid flows, a heating part disposed outside the liquid flow channel, a heat reflecting part facing a heat radiating side of the heating part, and a cooling part through which a cooling medium flows adjacent a reverse side of a reflecting surface of the heat reflecting part for cooling the heat reflecting part. Radiant heat not absorbed in the liquid is reflected by the heat reflecting part. The heat reflecting part reflects radiant heat cooled by the cooling part so that the body of the liquid heater and peripheral members are maintained at a temperature not higher than a predetermined temperature to prevent overheating the liquid.
    Type: Grant
    Filed: May 24, 2012
    Date of Patent: October 17, 2017
    Assignee: KURITA WATER INDUSTRIES LTD.
    Inventors: Minoru Uchida, Haruyoshi Yamakawa, Naoki Matsumoto
  • Patent number: 9778948
    Abstract: An information processing apparatus includes a processor, and a memory connected to the processor, that stores a piece of identification information allocated to a physical partition in the information processing apparatus. The processor executes a process including collecting pieces of the identification information that are stored by other information processing apparatuses included in an information processing system. The process includes notifying an operating system of the pieces of the identification information collected at the collecting.
    Type: Grant
    Filed: May 6, 2013
    Date of Patent: October 3, 2017
    Assignee: FUJITSU LIMITED
    Inventors: Yuuji Konno, Naoki Matsumoto
  • Patent number: 9761418
    Abstract: A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: September 12, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masayuki Shintaku, Takashi Suzuki, Masahiko Konno, Michitaka Aita, Taizo Okada, Hideo Kato, Naoki Matsumoto
  • Publication number: 20170229286
    Abstract: Disclosed is a plasma processing apparatus including: a processing container into which an electromagnetic wave for plasma excitation is supplied; a placing table provided inside the processing container and configured to place a workpiece thereon; a first coupling member inserted into each of a plurality of insertion portions formed in a part of a dielectric member that transmits the electromagnetic wave, among a plurality of members that constitute the placing table, and configured to couple the dielectric member and a member to be coupled; and a dielectric cap fitted to each of the plurality of insertion portions so as to cover the first coupling member and having a dielectric constant substantially equal to the dielectric constant of the dielectric member.
    Type: Application
    Filed: February 1, 2017
    Publication date: August 10, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Michitaka AITA, Naoki MATSUMOTO
  • Publication number: 20170199080
    Abstract: An optical nondestructive testing method includes: a laser emitting step involving emitting a heating laser from a laser output device such that the intensity of the heating laser applied to a measurement point changes sinusoidally; a laser intensity measuring step involving measuring the intensity of the heating laser by a phase difference detector; an infrared radiation intensity measuring step involving measuring, by the phase difference detector, the intensity of infrared radiation radiating from the measurement point; a phase difference measuring step involving determining, by the phase difference detector, a phase difference between the intensity of the heating laser and the intensity of the infrared radiation, and outputting the phase difference determined to a determiner from the phase difference detector; and a connection area calculating step involving determining, by the determiner, a connection area in accordance with the phase difference and phase difference-connection area correlation informatio
    Type: Application
    Filed: December 28, 2016
    Publication date: July 13, 2017
    Applicant: JTEKT CORPORATION
    Inventors: Naoki MATSUMOTO, Kouya YOSHIDA, Ryota UMEZAWA, Jun MATSUMOTO