Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract: Provided is an electronic thermometer that is inexpensive, has fast thermal response, and suppresses bending and directional misalignment of the lead of the temperature sensor during assembly of the electronic thermometer. The electronic thermometer includes: a temperature sensor that includes a temperature sensing unit that measures the body temperature of a measurement subject and a lead having one end that is fixed to the temperature sensing unit; a hollow housing that houses the lead, and in which the temperature sensing unit is arranged on the tip side; a printed circuit board to which the other end of the lead is fixed; and an assembly that includes the printed circuit board and is housed in the housing. The assembly includes an extension portion extending toward the tip side of the housing. The extension portion has a guide portion that orients the extending direction of the lead.

Abstract: A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a-group III-nitride-film-side main surface of the group III nitride composite substrate is 200 ?/sq or less. A method for manufacturing a group III nitride composite substrate includes the steps of bonding the group III nitride film and the support substrate to each other; and reducing the thickness of at least one of the group III nitride film and the support substrate bonded to each other. Accordingly, a group III nitride composite substrate of a low sheet resistance that is obtained with a high yield as well as a method for manufacturing the same are provided.

Abstract: A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate having a thickness ts of 0.1 mm or more and 1 mm or less and a group III nitride film having a thickness tf, thinner than the thickness ts, of 0.01 mm or more and 0.25 mm or less that are bonded to each other. An absolute value |??| of a difference ?? in thermal expansion coefficient determined by subtracting a thermal expansion coefficient ?s of the support substrate from a thermal expansion coefficient ?f of the group III nitride film is 2.2×10?6 K?1 or less. A Young's modulus Es and the thickness ts of the support substrate, a Young's modulus Ef and the thickness tf of the group III nitride film, and the difference ?? in thermal expansion coefficient satisfy a relation: ts2/tf?6Ef·|??|/Es.

Abstract: An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

Abstract: A parallel resonance frequency can be adjusted in order to stably and securely block different high frequency noises flowing into a line such as a power feed line or a signal line from electric members including a high frequency electrode within a processing chamber. A filter 102(1) coaxially accommodates a coil 104(1) within a cylindrical outer conductor 110, and a ring member 122 is coaxially installed between the coil 104(1) and the outer conductor 110. The ring-shaped member 122 may be a plate body of a circular ring shape on a plane orthogonal to an axial direction of the outer conductor 110 and made of a conductor such as cupper or aluminum and electrically connected with the outer conductor 110 while electrically insulated from the coil 104(1).

Abstract: A lens barrel of the invention is configured with a first barrel member, a second barrel member which rotates around an outer periphery of the first barrel member and which has a through hole between an outer peripheral surface and an inner peripheral surface, and a moisture permeable member provided so as to cover the through hole of the second barrel member.

Abstract: A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.

Abstract: An etching method and apparatus for etching a silicon oxide film selectively with respect to a silicon nitride film formed on a substrate are provided. A processing gas containing a plasma excitation gas and a CHF-based gas is introduced into a processing chamber such that a flow rate ratio of the CHF-based gas to the plasma excitation gas is 1/15 or higher. By generating a plasma in the processing chamber, the silicon oxide film is etched selectively with respect to the silicon nitride film formed on the substrate in the processing chamber.

Abstract: An exhaust gas purification device comprises a first channel member that forms an exhaust gas flow path leading to a catalyst and a second channel member that forms a reducing agent flow path guiding a reducing agent injected by an injector to the exhaust gas flow path upstream of the catalyst. The second channel member is inserted so as to penetrate a side wall of the first channel member to protrude into the exhaust gas flow path.

Abstract: An optical non-destructive inspection method includes: heating including setting a measurement spot on a surface of a workpiece and irradiating the measurement spot with heating laser light using a heating laser light source, heat ray detectors, and a controller; acquiring a temperature rise property that is a temperature rise state of the measurement spot according to a heating time by detecting a heat ray radiated from the measurement spot to determine a temperature at the measurement spot; and determining whether or not a pressure contact state at pressure contact portions, which include a contact area and a contact pressure, is appropriate based on the temperature rise property.

Abstract: Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.

Abstract: A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate having a thickness ts of 0.1 mm or more and 1 mm or less and a group III nitride film having a thickness tf, thinner than the thickness ts, of 0.01 mm or more and 0.25 mm or less that are bonded to each other. An absolute value |??| of a difference ?? in thermal expansion coefficient determined by subtracting a thermal expansion coefficient ?s of the support substrate from a thermal expansion coefficient ?f of the group III nitride film is 2.2×10?6 K?1 or less. A Young's modulus Es and the thickness ts of the support substrate, a Young's modulus Ef and the thickness tf of the group III nitride film, and the difference ?? in thermal expansion coefficient satisfy a relation: ts2/tf?6Ef·|??|/Es.

Abstract: A 4-aminocarbazole compound represented by formula (1): wherein Ar1-Ar4 represent substituted or unsubstituted aryl, thienyl, pyridyl, benzothienyl, dibenzothienyl, dibenzofuranyl, 4-carbazolyl, dibenzothienylphenyl, dibenzofuranylphenyl or 9-carbazolylphenyl group; R1-R7 represent substituted or unsubstituted aryl, heteroaryl or heteroarylphenyl group, or alkyl, alkoxy, cyano group, or hydrogen or halogen atom; n is integer of 0-2; and X represents substituted or unsubstituted (n+1)-valent aromatic hydrocarbon, heteroaromatic or heteroarylphenyl group. The 4-aminocarbazole compound provides an organic EL device exhibiting enhanced emitting efficiency and durability.

Abstract: Disclosed is a plasma processing apparatus including a processing container, a placing table, a central introduction section, and a peripheral introduction section. The central introduction section is provided above the placing table. The central introduction introduces a gas toward the placing table along the axis passing through a center of the placing table. The peripheral introduction section is provided between the central introduction section and a top surface of the placing table in a height direction. In addition, the peripheral introduction section is formed along a side wall. The peripheral introduction section provides a plurality of gas ejection ports arranged in a circumferential direction with respect to the axis. The plurality of gas ejection ports of the peripheral introduction section extend away from the placing table as the gas ejection ports come close to the axis.

Abstract: A group III nitride composite substrate includes a support substrate and a group III nitride film. A ratio st/mt of a standard deviation st of the thickness of the group III nitride film, to a mean value mt of the thickness thereof is 0.001 or more and 0.2 or less, and a ratio so/mo of a standard deviation so of an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation, to a mean value mo of the absolute value of the off angle thereof is 0.005 or more and 0.6 or less. Accordingly, there is provided a low-cost and large-diameter group III nitride composite substrate including a group III nitride film having a large thickness, a small thickness variation, and a high crystal quality.