Abstract: A thin-film semiconductor device is provided including a plurality of thin-film transistors (TFT) having different driving voltages formed on an glass substrate, wherein a gate electrode electric field at each of the driving voltages of the plurality of thin-film transistors is in a range of about 1MV/cm to 2MV/cm, and a drain concentration of p-type thin-film transistors (TFT) is in a range of about 3E+19/cm3 to 1E+20/cm3.

Abstract: A method of fabricating a thin film transistor including an electrically insulating substrate, a semiconductor layer formed on the substrate, and source and drain electrodes formed above source and drain regions formed in the semiconductor layer, the source and drain electrodes being composed of aluminum or aluminum alloy, the method including the steps of forming a gate electrode, implanting impurity ions into the semiconductor layer for forming the source and drain regions, forming an interlayer insulating film entirely over the substrate, forming contact holes throughout the interlayer insulating film such that the source and drain regions are exposed through the contact holes, forming an electrically conductive film composed of aluminum or aluminum alloy, in the contact holes for forming the source and drain electrodes, and thermally annealing the substrate at 275 to 350 degrees centigrade for 1.5 to 3 hours in inert atmosphere.