Abstract: When a drive wheel (3) of a vehicle is driven by a motor generator (10) that operates as a motor, electric power is supplied from a storage battery (20) to the motor generator (10). When the drive wheel (3) is braked by the motor generator (10) that operates as a generator, electric power is supplied from the motor generator (10) to the storage battery (20), and a first thermoelectric conversion element (11) is supplied with electric power from the motor generator (10) to cool the motor generator (10).

Abstract: The present invention provides a laser processing method which improves strength and quality of an object to be processed after working. In the present embodiment, after modified regions 7 are formed along the outlines of hollowed-out portions Q1 and Q2 in the object 1 by irradiating the object 1 with a laser light, etching is performed onto the object 1 to selectively advance etching along a fracture which is contained in the modified regions 7 or extend from the modified regions 7, and the hollowed-out portions Q1 and Q2 are spaced and moved from the object 1. Here, the modified regions 7 are formed so as to connect to each other along the outlines of the hollowed-out portions Q1 and Q2, and further exposed on a surface 3 side of the object 1.

Abstract: A detection membrane (11) is joined to a first surface (10a) of an electrolyte membrane (10), and hydrogen gas is supplied to a second surface (10b) thereof. If the electrolyte membrane has a defect (10c), hydrogen gas leaks to the first surface, resulting in a change in electric resistance of the detection membrane near the defect. The defect is recognized by this change. FA hydrogen electrode (14) is joined to the second surface, and an electric circuit (17) is connected between the detection membrane and the hydrogen electrode. Hydrogen gas supplied to a space facing the hydrogen electrode is ionized at the hydrogen electrode, and hydrogen ions permeates through the electrolyte membrane and hydrogenates the detection membrane. Whether or not hydrogen ion conductivity is uniform is examined by measuring electric resistance of the detection membrane, which varies depending on the amount of hydrogen ions, for each of regions.

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work along a predetermined cutting line on the surface of the work, wherein a pulse laser beam is irradiated on the predetermined cutting line on the surface of the work causing a multiple photon absorption with a condensed point arranged inside the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cutting line, whereby the work can be cut with a small force by cracking the work along the predetermined cutting line starting from the modified area.

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract: An electric power generation device includes a cell body and a secondary electric power generator. The cell body has an electrolyte, a fuel electrode and an air electrode. The secondary electric power generator is joined to at least one of the fuel and air electrodes and includes P- and N-type thermoelectric conversion members. With the electric power generation device, the cell body generates electric power at temperatures higher than or equal to an power generation start temperature, and at the same time, the P- and N-type thermoelectric conversion members joined to the cell body and functioning as a thermocouple produce electric power by utilizing the Seebeck effect.

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface.

Abstract: Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

Abstract: A drive apparatus for a vehicle, which supplies more electric power to a motor which supplements the drive power of an engine and collects energy from an exhaust to be able to improve fuel consumption and reduce the total amount of the exhaust, is realized by comprising an engine coupled to a drive wheel to generate drive power for the vehicle, a generator motor coupled to an output shaft of the engine and the drive wheel, a battery, a power control unit, and a power generation unit which generates electric power using an exhaust of the engine, and selects a charge mode when the vehicle is braked and when an engine output is equal to or greater than an output needed to drive the vehicle, wherein the electric power generated by the generator is stored in the battery, and energy is collected from the exhaust using the power generation unit.

Abstract: A laser processing method which can accurately cut an object to be processed along a line to cut is provided. A modified region 7 formed by multiphoton absorption forms a cutting start region 8 within an object to be processed 1 along a line 5 along which the object is intended to be cut. Thereafter, the object 1 is irradiated with laser light L2 transmittable through an unmodified region of the object 1, so as to generate fractures 24 from the cutting start region 8 acting as a start point, whereby the object 1 can accurately be cut along the line 5 along which the object is intended to be cut. Expanding an expandable film 19 having the object 1 secured thereto separates individual chips 25 from each other, which can further improve the reliability in cutting the object 1 along the line 5 along which the object is intended to be cut.

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface.

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

Abstract: A hydrogen storage alloy unit comprises a porous body 7 having a large number of holes (spaces) 9 allowing hydrogen atoms to pass through, and a hydrogen storage alloy covering a surface of the porous body 7, inclusive of surfaces of the holes thereof. The hydrogen storage alloy includes a hydrogen storage base formed of a hydrogen storage material, and a catalytic layer covering a surface of the hydrogen storage base. The porous body 7 is formed of an assembly of hydrogen storage fibers 8 formed by vapor-depositing the hydrogen storage alloy onto nanofibers.

Abstract: A hydrogen storage alloy comprises a hydrogen storage base 2 formed of a mixture of Mg and an alloy (Mg2Ni, for example), and a catalytic layer 3 covering a surface of the hydrogen storage base 2. The hydrogen storage alloy with this structure exhibits both a high ability to store hydrogen and a high ability to cause hydrogen to diffuse in it in the solid state, provided by Mg and Mg2Ni, respectively. Hydrogen absorbed in Mg in one region is passed on to Mg (or Mg2Ni) in another region by virtue of Mg2Ni. Since this movement of hydrogen does not require heat nor pressure, hydrogen can be absorbed at room temperature and atmospheric pressure.

Abstract: A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

Abstract: A rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby a fracture 17 generated in a thickness direction of the object for separation 10A from a molten processed region 13 acting as a start point reaches a front face 1a of the object 1A continuously without substantially changing its direction. Then, after cutting the objects 1A, 10A, the object 10A is removed from the object 1A, so as to yield chips 19.