Abstract: According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode members and a plurality of insulating members, each of the electrode members and each of the insulating members being stacked alternately in a first direction on the substrate. The semiconductor memory device also includes a memory hole that extends in the stacked body in the first direction and a semiconductor member that is disposed to extend in the memory hole in the first direction. The semiconductor memory device also includes a memory member that is disposed between the semiconductor member and the plurality of electrode members. The plurality of electrode members including a first electrode member and a second electrode member, a thickness of the memory member at the position of the first electrode member being greater than a thickness of the memory member at the position of the second electrode member.

Abstract: A power supply device (104-1) includes a substrate (20) on which an electric component (25) is mounted, a chassis (10) having a chassis surface (11) and a threaded part (10a), a chassis-side resin part (91) connected to a back surface (20a) and the chassis surface (11), a fixation screw (29), and an insulating member (60). The fixation screw (29) fixes both the electric component (25) and the substrate (20) to the chassis (10) by screw-coupling an end part (29c) of the fixation screw (29), exposed in a direction toward the chassis (10) from an open hole formed through the insulating member (60), to the threaded part (10a) of the chassis (10). In addition, the fixation screw (29) brings the electric component (25) and the chassis (10) into electrical noncontact with each other by being placed in an open hole of the insulating member (60).

Abstract: Provided is a high-frequency power supply device capable of causing an appropriate current to flow through a transformer. A self-oscillation high-frequency power supply device is provided with a DC power supply, an LC resonant circuit, a switching circuit, and a transformer. The LC resonant circuit includes an induction coil for plasma generation and a capacitor. The switching circuit includes a semiconductor element, the switching circuit being configured to subject DC power supplied from the DC power supply to switching processing to supply high-frequency power to the LC resonant circuit. The transformer includes a primary coil included in the LC resonant circuit and a secondary coil connected to the semiconductor element to turn on/off a semiconductor element. The transformer has a coaxial structure in which the primary coil and the secondary coil are coaxially provided. The LC resonant circuit includes a resistor connected in parallel to the primary coil.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode members and a plurality of insulating members, each of the electrode members and each of the insulating members being stacked alternately in a first direction on the substrate. The semiconductor memory device also includes a memory hole that extends in the stacked body in the first direction and a semiconductor member that is disposed to extend in the memory hole in the first direction. The semiconductor memory device also includes a memory member that is disposed between the semiconductor member and the plurality of electrode members. The plurality of electrode members including a first electrode member and a second electrode member, a thickness of the memory member at the position of the first electrode member being greater than a thickness of the memory member at the position of the second electrode member.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode members and a plurality of insulating members, each of the electrode members and each of the insulating members being stacked alternately in a first direction on the substrate. The semiconductor memory device also includes a memory hole that extends in the stacked body in the first direction and a semiconductor member that is disposed to extend in the memory hole in the first direction. The semiconductor memory device also includes a memory member that is disposed between the semiconductor member and the plurality of electrode members. The plurality of electrode members including a first electrode member and a second electrode member, a thickness of the memory member at the position of the first electrode member being greater than a thickness of the memory member at the position of the second electrode member.

Abstract: A power supply device (100-1) includes: a substrate (20) on which an electric component (25) is mounted; a chassis (10) including a chassis surface (11) to be a surface facing one surface (20a) of the substrate (20); and cured insulating resin (27-1) to be placed between the one surface (20a) of the substrate (20) and the chassis surface (11) so as to be connected to the one surface (20a) and the chassis surface (11), the cured insulating resin (27-1) having a thermal conductivity between 1 W/mK and 10 W/mK inclusive.

Abstract: The present invention provides a solvent-free varnish composition, including: a thermosetting resin (A) having two or more (meth)acryloyl groups in a molecule thereof; a thermosetting resin (B) having one or more epoxy groups in a molecule thereof; a monofunctional vinyl-based monomer having an ether bond or an ester bond; an organic peroxide having a 10-hour half-life temperature of 40° C. or more; and a curing catalyst for an epoxy resin, in which a mixed resin of the thermosetting resin (A) and the thermosetting resin (B) has an epoxy equivalent of from 500 to 5,000. The solvent-free varnish composition can be used as an insulating varnish that shows a small energy loss and requires a short curing time in its curing treatment step, and that provides a cured product that barely causes the precipitation of an oligomer or the like even when exposed to a refrigerant-based environment containing a refrigerant and a refrigerating machine oil under high temperature and high pressure.

Abstract: In the insulation sheet, an insulation resin layer made of a thermosetting resin composition in an uncured or semi-cured state is formed on one or each of both surfaces of the base material. The thermosetting resin composition contains: a thermosetting resin (A) that is in solid form at 25° C.; a thermosetting resin (B) that is in liquid form at 25° C.; a latent curing agent that is unreactive at 60° C. or lower; and an inorganic filler having a maximum particle diameter smaller than a film thickness of the insulation resin layer and having an average particle diameter smaller than 0.5 times the film thickness. The insulation resin layer of the insulation sheet is efficiently compressed into a predetermined thickness by pressure application at normal temperature and permeates a gap between a stator core and a stator coil by heating during curing treatment, whereby both members can be insulated and fixed.

Abstract: A coating material of the present invention includes an insulating resin, and dispersion particles dispersed in the insulating resin. The dispersion particle includes a core particle containing zinc oxide as a main component and having nonlinear resistance, and a resin layer covering the surface of the core particle and having an average thickness being less than or equal to 5.0 ?m. The coating material of the present invention is a coating material for coating an inner surface of a ground tank of a gas insulated switchgear.

Abstract: The thermosetting resin composition is used for a sheet-form insulating varnish to be disposed in a gap between insulation target members, and contains: a thermosetting resin (A) that is in solid form at 25° C.; a thermosetting resin (B) that is in liquid form at 25° C.; a latent curing agent that is unreactive at 60° C. or lower; and an inorganic filler having a maximum particle diameter smaller than a dimension of the gap and having an average particle diameter smaller than 0.5 times the dimension of the gap. 30 parts by mass to 70 parts by mass of the thermosetting resin (A) is contained per a total of 100 parts by mass of the thermosetting resin (A) and the thermosetting resin (B). A volume ratio of the inorganic filler to an entirety of the composition is not higher than 50%.

Abstract: A power supply device (104-1) includes a substrate (20) on which an electric component (25) is mounted, a chassis (10) having a chassis surface (11) and a threaded part (10a), a chassis-side resin part (91) connected to a back surface (20a) and the chassis surface (11), a fixation screw (29), and an insulating member (60). The fixation screw (29) fixes both the electric component (25) and the substrate (20) to the chassis (10) by screw-coupling an end part (29c) of the fixation screw (29), exposed in a direction toward the chassis (10) from an open hole formed through the insulating member (60), to the threaded part (10a) of the chassis (10). In addition, the fixation screw (29) brings the electric component (25) and the chassis (10) into electrical noncontact with each other by being placed in an open hole of the insulating member (60).

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode members and a plurality of insulating members, each of the electrode members and each of the insulating members being stacked alternately in a first direction on the substrate. The semiconductor memory device also includes a memory hole that extends in the stacked body in the first direction and a semiconductor member that is disposed to extend in the memory hole in the first direction. The semiconductor memory device also includes a memory member that is disposed between the semiconductor member and the plurality of electrode members. The plurality of electrode members including a first electrode member and a second electrode member, a thickness of the memory member at the position of the first electrode member being greater than a thickness of the memory member at the position of the second electrode member.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode members and a plurality of insulating members, each of the electrode members and each of the insulating members being stacked alternately in a first direction on the substrate. The semiconductor memory device also includes a memory hole that extends in the stacked body in the first direction and a semiconductor member that is disposed to extend in the memory hole in the first direction. The semiconductor memory device also includes a memory member that is disposed between the semiconductor member and the plurality of electrode members. The plurality of electrode members including a first electrode member and a second electrode member, a thickness of the memory member at the position of the first electrode member being greater than a thickness of the memory member at the position of the second electrode member.

Abstract: A power supply device (100-1) includes: a substrate (20) on which an electric component (25) is mounted; a chassis (10) including a chassis surface (11) to be a surface facing one surface (20a) of the substrate (20); and cured insulating resin (27-1) to be placed between the one surface (20a) of the substrate (20) and the chassis surface (11) so as to be connected to the one surface (20a) and the chassis surface (11), the cured insulating resin (27-1) having a thermal conductivity between 1 W/mK and 10 W/mK inclusive.

Abstract: A curable composition (X) includes: an epoxy resin (A); a curing agent (B); a curing promoter (C); and hydrophilic inorganic particles (D). The epoxy resin (A) includes a first epoxy resin (a1) and a second epoxy resin (a2). The first epoxy resin (a1) is a chain aliphatic epoxy resin having a hydrophilic group, and an aqueous dissolution rate of the first epoxy resin (a1) is not less than 20 mass % and not more than 99 mass %. The second epoxy resin (a2) includes at least one selected from the group consisting of a cyclic aliphatic epoxy resin, an aromatic epoxy resin and a heterocyclic epoxy resin.

Abstract: An ICP analyzer 100 includes a self-oscillation radio-frequency power supply unit 120 for supplying radio-frequency power for generating plasma to an induction coil 111 wound around a plasma torch 110. To check the type of plasma torch 110, the analyzer 100 further includes: a frequency measurement section 121 for measuring an output frequency of the power supply unit 120; a storage unit 190 holding a reference output frequency for each type of plasma torch; and a torch checker 132 for determining whether or not the output frequency measured by the frequency measurement section 121 after the plasma is lit agrees with any one of the reference output frequencies, and for giving notification of the determination result.

Abstract: A nonvolatile semiconductor storage device having a control gate formed on a semiconductor substrate and including a cylindrical through hole. A block insulating film, a charge storage film, a tunnel insulating film, and a semiconductor layer are formed on a side surface of the control gate inside the through hole. The tunnel insulating film includes a first insulating film having SiO2 as a base material and containing an element that lowers a band gap of the base material by being added. A density and a density gradient of the element monotonously increase from the semiconductor layer toward the charge storage film.

Abstract: A coating material of the present invention includes an insulating resin, and dispersion particles dispersed in the insulating resin. The dispersion particle includes a core particle containing zinc oxide as a main component and having nonlinear resistance, and a resin layer covering the surface of the core particle and having an average thickness being less than or equal to 5.0 ?m. The coating material of the present invention is a coating material for coating an inner surface of a ground tank of a gas insulated switchgear.

Abstract: A semiconductor memory device includes a plurality of electrode layers stacked in a first direction; a semiconductor layer of a columnar shape extending through the electrode layers in the first direction; and a plurality of floating gates provided between the electrode layers and the semiconductor layer respectively. The floating gates surround the semiconductor layer. A gate length in a first direction of a floating gate positioned between one of the electrode layers and the semiconductor layer is longer than a layer thickness in the first direction of the one of the electrode layers. A ratio of the layer thickness of the one of the electrode layers to the gate length has a positive correlation with an outer diameter of a first portion of the semiconductor layer surrounded by the floating gate in a second direction from the semiconductor layer toward the one of the electrode layers.

Abstract: The present invention provides a solvent-free varnish composition, including: a thermosetting resin (A) having two or more (meth)acryloyl groups in a molecule thereof; a thermosetting resin (B) having one or more epoxy groups in a molecule thereof; a monofunctional vinyl-based monomer having an ether bond or an ester bond; an organic peroxide having a 10-hour half-life temperature of 40° C. or more; and a curing catalyst for an epoxy resin, in which a mixed resin of the thermosetting resin (A) and the thermosetting resin (B) has an epoxy equivalent of from 500 to 5,000. The solvent-free varnish composition can be used as an insulating varnish that shows a small energy loss and requires a short curing time in its curing treatment step, and that provides a cured product that barely causes the precipitation of an oligomer or the like even when exposed to a refrigerant-based environment containing a refrigerant and a refrigerating machine oil under high temperature and high pressure.